Semiconductor device

Abstract

A semiconductor device, includes: a first conductivity-semiconductor substrate; a hetero semiconductor region for forming a hetero junction with the first conductivity-semiconductor substrate; a gate electrode adjacent to a part of the hetero junction by way of a gate insulating film; a drain electrode connecting to the first conductivity-semiconductor substrate; a source electrode connecting to the hetero semiconductor region; and a second conductivity-semiconductor region formed on a part of a first face of the first conductivity-semiconductor substrate in such a configuration as to oppose the gate electrode via the gate insulating film, the gate insulating film, the hetero semiconductor region and the first conductivity-semiconductor substrate contacting each other to thereby form a triple contact point. A first face of the second conductivity-semiconductor region has such an impurity concentration that allows a field from the gate electrode to form an inversion layer on the first face of the second conductivity-semiconductor region.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross sectional view of a structure of a semiconductor device (field effect transistor device), according to a first embodiment of the present invention.

FIG. 2 shows that a built-in depletion layer expands in the cross section of the semiconductor device, according to the first embodiment of the present invention.

FIG. 3 shows that the depletion layer expands in the cross section of the semiconductor device when the semiconductor device is off, according to the first embodiment of the present invention.

FIG. 4 shows that the depletion layer is reduced and an electron is flowing in the cross section of the semiconductor device when the semiconductor device is on, according to the first embodiment of the present invention.

FIG. 5 shows a flat layout of a unit cell, according to the first embodiment of the present invention.

FIG. 6 is a cross sectional view of the semiconductor device, taken along the line VI-VI in FIG. 5.

FIG. 7 is a cross sectional view of the semiconductor device, according to a second embodiment of the present invention.

FIG. 8 is a cross sectional view of the semiconductor device, according to a third embodiment of the present invention.

FIG. 9 shows an energy band, according to a fourth embodiment of the present invention.

FIG. 10 shows an energy band, according to the fourth embodiment of the present invention.

FIG. 11 shows a cross sectional structure of the semiconductor device, according to the fourth embodiment of the present invention.

FIG. 12 shows a cross sectional structure of the semiconductor device, according to a fifth embodiment of the present invention.

FIG. 13 shows a cross sectional structure of the semiconductor device, according to a sixth embodiment of the present invention.

Claims

1. A semiconductor device, comprising: 1) a first conductivity-semiconductor substrate;2) a hetero semiconductor region configured to form a hetero junction in combination with the first conductivity-semiconductor substrate;3) a gate electrode configured to be adjacent to a part of the hetero junction by way of a gate insulating film;4) a drain electrode configured to connect to the first conductivity-semiconductor substrate;5) a source electrode configured to connect to the hetero semiconductor region; and6) a second conductivity-semiconductor region formed on a part of a first face of the first conductivity-semiconductor substrate in such a configuration as to oppose the gate electrode by way of the gate insulating film, the gate insulating film, the hetero semiconductor region and the first conductivity-semiconductor substrate contacting each other to thereby form a triple contact point,wherein a first face of the second conductivity-semiconductor region is configured to have such an impurity concentration that allows a field from the gate electrode to form an inversion layer on the first face of the second conductivity-semiconductor region.

2. The semiconductor device as claimed in claim 1, wherein the second conductivity-semiconductor region is configured to be electrically connected to the source electrode, anda distance between the second conductivity-semiconductor region and the triple contact point is smaller than a length reached by a depletion layer attributable to a built-in potential by a junction between the second conductivity-semiconductor region and the first conductivity-semiconductor substrate.

3. The semiconductor device as claimed in claim 1, wherein around a first contact region configured to connect the source electrode to the hetero semiconductor region, a plurality of basic unit cells each of which has a periphery including a part of the gate electrode are flatly disposed in such a configuration as to be connected in parallel to each other, anda second contact region configured to connect the second conductivity-semiconductor region to the source electrode is positioned in one of the following: i) between two or more of the basic unit cells adjacent to each other, andii) around a common contact point of three or more of the basic unit cells.

4. The semiconductor device as claimed in claim 1, wherein the first conductivity-semiconductor substrate is made of a material selected from the group consisting of silicon carbide, gallium nitride and diamond.

5. The semiconductor device as claimed in claim 1, wherein the hetero semiconductor region is made of a material selected from the group consisting of single crystalline silicon, polycrystalline silicon and amorphous silicon.

6. The semiconductor device according to claim 2, wherein1) the hetero semiconductor region includes: i) a first hetero semiconductor region formed in a first certain region of the first face of the first conductivity-semiconductor substrate, and having a first semiconductor material which is different from a semiconductor material of the first conductivity-semiconductor substrate in band gap, andii) a second hetero semiconductor region in a second certain region of the first face of the first conductivity-semiconductor substrate, and having a second semiconductor material which is different from the semiconductor material of the first conductivity-semiconductor substrate in band gap, the second hetero semiconductor region having the second conductivity;2) the gate electrode is configured to be adjacent to a first hetero junction of the hetero junction by way of the gate insulating film, the first hetero junction being an interface between the first conductivity-semiconductor substrate and the first hetero semiconductor region, and3) the source electrode is configured to connect to the first hetero semiconductor region and the second hetero semiconductor region, and4) in a location spaced part by a certain distance from a triple contact point where the first hetero semiconductor region, the first conductivity-semiconductor substrate and the gate insulating film contact each other, a field relaxing region having the second conductivity is formed in the semiconductor substrate in such a configuration as to oppose the hetero semiconductor region, the field relaxing region being configured to be electrically connected to the source electrode.

7. The semiconductor device according to claim 6, wherein the field relaxing region and the source electrode form an ohmic connection by way of the second hetero semiconductor region.

8. The semiconductor device according to claim 6, wherein the field relaxing region having the second conductivity has a punch through preventing region having the second conductivity, the punch through preventing region being configured to have an impurity concentration more than or equal to that of the field relaxing region having the second conductivity, andthe punch through preventing region and the source electrode form an ohmic connection by way of the second hetero semiconductor region.

9. The semiconductor device as claimed in claim 8, wherein the hetero junction includes a second hetero junction which is an interface between the first conductivity-semiconductor substrate and the second hetero semiconductor region is configured to be positioned in the punch through preventing region.

10. The semiconductor device as claimed in claim 6, wherein the first hetero semiconductor region has the first conductivity.

11. The semiconductor device as claimed in claim 6, wherein the first hetero semiconductor region and the second hetero semiconductor region each are made of a material selected from the group consisting of single crystalline silicon, polycrystalline silicon, amorphous silicon, single crystalline silicon germanium, polycrystalline silicon germanium and amorphous silicon germanium.

12. The semiconductor device as claimed in claim 6, wherein the first hetero semiconductor region and the second hetero semiconductor region each are made of a material selected from the group consisting of single crystalline germanium, polycrystalline germanium, amorphous germanium, single crystalline gallium arsenide, polycrystalline gallium arsenide and amorphous gallium arsenide.