Silicon carbide

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CPC
H01L29/1608

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1608Silicon carbide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Super junction silicon carbide semiconductor device and manufacturi...
- Patent number 12,170,312
- Issue date Dec 17, 2024
- Fuji Electric Co., Ltd.
- Kensuke Takenaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for separating dies from a semiconductor substrate
- Patent number 12,170,226
- Issue date Dec 17, 2024
- Infineon Technologies AG
- Franz-Josef Pichler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor rectifier and manufacturing method of the same
- Patent number 12,170,340
- Issue date Dec 17, 2024
- Diodes Incorporated
- Tao Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,166,120
- Issue date Dec 10, 2024
- Fuji Electric Co., Ltd.
- Yohei Kagoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor power transistor and method of manufa...
- Patent number 12,166,082
- Issue date Dec 10, 2024
- LEAP Semiconductor Corp.
- Wei-Fan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit with a transistor device and a biasing circuit
- Patent number 12,166,483
- Issue date Dec 10, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of forming the same
- Patent number 12,159,930
- Issue date Dec 3, 2024
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with reduced strain
- Patent number 12,159,909
- Issue date Dec 3, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,159,872
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing wafers with modification lines of defined orie...
- Patent number 12,159,805
- Issue date Dec 3, 2024
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Power transistor cell and power transistor having field shielding c...
- Patent number 12,159,900
- Issue date Dec 3, 2024
- Robert Bosch GmbH
- Alberto Martinez-Limia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 12,159,903
- Issue date Dec 3, 2024
- Hyundai Mobis Co., Ltd.
- Jeong Mok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 12,159,905
- Issue date Dec 3, 2024
- Sumitomo Electric Industries, Ltd.
- Yu Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for applying pressure to stress-producing layers...
- Patent number 12,151,314
- Issue date Nov 26, 2024
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Silicon carbide semiconductor device, semiconductor package, and me...
- Patent number 12,154,834
- Issue date Nov 26, 2024
- Fuji Electric Co., Ltd.
- Makoto Utsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reducing the electrical and thermal resistance of SiC su...
- Patent number 12,148,825
- Issue date Nov 19, 2024
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polishing composition
- Patent number 12,146,077
- Issue date Nov 19, 2024
- FUJIMI INCORPORATED
- Yasuaki Ito
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Semiconductor device, method for manufacturing semiconductor device...
- Patent number 12,148,799
- Issue date Nov 19, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
MOSFET device with shielding region and manufacturing method thereof
- Patent number 12,148,824
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Mario Giuseppe Saggio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device
- Patent number 12,148,798
- Issue date Nov 19, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC wafer and manufacturing method for SiC wafer
- Patent number 12,139,813
- Issue date Nov 12, 2024
- Toyota Tsusho Corporation
- Masatake Nagaya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium Nitride high-electron mobility transistors with p-type laye...
- Patent number 12,142,674
- Issue date Nov 12, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Package including multiple semiconductor devices
- Patent number 12,142,551
- Issue date Nov 12, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Jerome Teysseyre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sic semiconductor layer and raised portio...
- Patent number 12,142,648
- Issue date Nov 12, 2024
- Rohm Co., Ltd.
- Seiya Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-device semiconductor chip with electrical access to devices a...
- Patent number 12,136,623
- Issue date Nov 5, 2024
- Infineon Technologies Austria AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High hole mobility transistor (HHMT) and method of manufacturing th...
- Patent number 12,136,669
- Issue date Nov 5, 2024
- GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,136,652
- Issue date Nov 5, 2024
- Sumitomo Electric Industries, Ltd.
- Taku Horii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide wafer and semiconductor device applied the same
- Patent number 12,136,653
- Issue date Nov 5, 2024
- SENIC INC.
- Jung Woo Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide single crystal and semiconductor apparatus
- Patent number 12,129,571
- Issue date Oct 29, 2024
- Mitsubishi Electric Corporation
- Hiroyuki Kinoshita
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...
- Publication number 20240421151
- Publication date Dec 19, 2024
- Qorvo US, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH SINGLE METALLIZATION PROCESS FOR OHMIC...
- Publication number 20240421192
- Publication date Dec 19, 2024
- Woflspeed, Inc.
- Rahul R. POTERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20240421235
- Publication date Dec 19, 2024
- Huawei Digital Power Technologies Co., Ltd.
- Yi YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER ANNEAL FORMED NANOSHEET LDMOS TRANSISTOR
- Publication number 20240413242
- Publication date Dec 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...
- Publication number 20240413197
- Publication date Dec 12, 2024
- Wolfspeed, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240413207
- Publication date Dec 12, 2024
- Hitachi Energy Ltd
- Giovanni ALFIERI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...
- Publication number 20240413208
- Publication date Dec 12, 2024
- Rohm Co., Ltd.
- Takuji MAEKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
TERMINATION STRUCTURES FOR MOSFETS
- Publication number 20240413196
- Publication date Dec 12, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Sauvik CHOWDHURY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240404906
- Publication date Dec 5, 2024
- Fuji Electric Co., Ltd.
- Shingo HAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF RECYCLING SILICON WASTEWATER AND METHOD OF MANUFACTURING...
- Publication number 20240400398
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Myungbeom PARK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...
- Publication number 20240405076
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20240405077
- Publication date Dec 5, 2024
- Mitsubishi Electric Corporation
- Naoyuki KAWABATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE AND INTERLAYER INSULATIN...
- Publication number 20240405084
- Publication date Dec 5, 2024
- Fuji Electric Co., Ltd.
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A HIGH-K GATE DIELECTRIC MULTILAYER...
- Publication number 20240405092
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Armin TILKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MODULE
- Publication number 20240405016
- Publication date Dec 5, 2024
- ROHM CO., LTD.
- Shinya UMEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME
- Publication number 20240401235
- Publication date Dec 5, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SEMICONDUCTOR DEVICE
- Publication number 20240405072
- Publication date Dec 5, 2024
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER SEMICONDUCTOR DEVICE
- Publication number 20240405119
- Publication date Dec 5, 2024
- DB HiTek Co., Ltd.
- Seung Hyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER ELECTRONIC DEVICE WITH IMPROVED ELECTRICAL PERFORMANCES
- Publication number 20240395924
- Publication date Nov 28, 2024
- STMicroelectronics International N.V.
- Salvatore CASCINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240395928
- Publication date Nov 28, 2024
- HYUNDAI MOBIS CO., LTD.
- Jeong Mok HA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE COMPRISING A WIDE BANDGAP SUBSTRATE
- Publication number 20240395804
- Publication date Nov 28, 2024
- Cambridge GaN Devices Limited
- Florin UDREA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE STRUCTURE COMPRISING A USEFUL MONOCRYSTALLINE SIC LAYER O...
- Publication number 20240395603
- Publication date Nov 28, 2024
- SOITEC
- Gweltaz Gaudin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION
- Publication number 20240387721
- Publication date Nov 21, 2024
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20240387723
- Publication date Nov 21, 2024
- Fuji Electric Co., Ltd.
- Tetsuya TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS
- Publication number 20240387620
- Publication date Nov 21, 2024
- Wolfspeed, Inc.
- Kijeong Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC CRYSTAL SUBSTRATE, METHOD OF MANUFACTURING SiC CRYSTAL SUBSTRAT...
- Publication number 20240387640
- Publication date Nov 21, 2024
- Sumitomo Electric Industries, Ltd.
- Issei SATOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240387724
- Publication date Nov 21, 2024
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240387725
- Publication date Nov 21, 2024
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SPLIT-GATE MOSFETS INTEGRATING HIGH-SPEED FREEWHEEL...
- Publication number 20240387722
- Publication date Nov 21, 2024
- NOVUS SEMICONDUCTORS CO., LTD.
- Hang GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SPEED, EFFICIENT SIC POWER MODULE
- Publication number 20240380320
- Publication date Nov 14, 2024
- Wolfspeed, Inc.
- Mrinal K. DAS
- B60 - VEHICLES IN GENERAL

Silicon carbide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Super junction silicon carbide semiconductor device and manufacturi...

Method for separating dies from a semiconductor substrate

Semiconductor rectifier and manufacturing method of the same

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Silicon carbide semiconductor device and method of manufacturing si...

Silicon carbide semiconductor power transistor and method of manufa...

Electronic circuit with a transistor device and a biasing circuit

High electron mobility transistor and method of forming the same

Power semiconductor device with reduced strain

IC including standard cells and SRAM cells

Method for producing wafers with modification lines of defined orie...

Power transistor cell and power transistor having field shielding c...

Power semiconductor device and method of fabricating the same

Silicon carbide semiconductor device

Device and method for applying pressure to stress-producing layers...

Silicon carbide semiconductor device, semiconductor package, and me...

Methods of reducing the electrical and thermal resistance of SiC su...

Polishing composition

Semiconductor device, method for manufacturing semiconductor device...

MOSFET device with shielding region and manufacturing method thereof

SiC semiconductor device

SiC wafer and manufacturing method for SiC wafer

Gallium Nitride high-electron mobility transistors with p-type laye...

Package including multiple semiconductor devices

Semiconductor device with sic semiconductor layer and raised portio...

Multi-device semiconductor chip with electrical access to devices a...

High hole mobility transistor (HHMT) and method of manufacturing th...

Semiconductor device

Silicon carbide wafer and semiconductor device applied the same

Silicon carbide single crystal and semiconductor apparatus

Patents Applicationslast 30 patents

VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...

SILICON CARBIDE DEVICE WITH SINGLE METALLIZATION PROCESS FOR OHMIC...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

LASER ANNEAL FORMED NANOSHEET LDMOS TRANSISTOR

SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...

TERMINATION STRUCTURES FOR MOSFETS

SEMICONDUCTOR DEVICE

METHOD OF RECYCLING SILICON WASTEWATER AND METHOD OF MANUFACTURING...

METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE AND INTERLAYER INSULATIN...

SEMICONDUCTOR DEVICE COMPRISING A HIGH-K GATE DIELECTRIC MULTILAYER...

SEMICONDUCTOR MODULE

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

SiC SEMICONDUCTOR DEVICE

SILICON CARBIDE POWER SEMICONDUCTOR DEVICE

POWER ELECTRONIC DEVICE WITH IMPROVED ELECTRICAL PERFORMANCES

POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

POWER SEMICONDUCTOR DEVICE COMPRISING A WIDE BANDGAP SUBSTRATE

COMPOSITE STRUCTURE COMPRISING A USEFUL MONOCRYSTALLINE SIC LAYER O...

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS

SiC CRYSTAL SUBSTRATE, METHOD OF MANUFACTURING SiC CRYSTAL SUBSTRAT...

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SPLIT-GATE MOSFETS INTEGRATING HIGH-SPEED FREEWHEEL...

HIGH SPEED, EFFICIENT SIC POWER MODULE