Silicon carbide

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CPC
H01L29/1608

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1608Silicon carbide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 12,211,902
- Issue date Jan 28, 2025
- Denso Corporation
- Masato Noborio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained-channel fin FETs
- Patent number 12,211,936
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 12,206,028
- Issue date Jan 21, 2025
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device and si...
- Patent number 12,205,990
- Issue date Jan 21, 2025
- Fuji Electric Co., Ltd.
- Takafumi Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell structure of silicon carbide MOSFET device, and power semicond...
- Patent number 12,205,991
- Issue date Jan 21, 2025
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Yafei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing same
- Patent number 12,205,989
- Issue date Jan 21, 2025
- PROTERIAL, LTD.
- Tsuyoshi Miura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacture of power devices having increased cross over current
- Patent number 12,199,149
- Issue date Jan 14, 2025
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,178
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level gate driver applied to SiC MOSFET
- Patent number 12,199,150
- Issue date Jan 14, 2025
- University of Electronic Science and Technology of China
- Zekun Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for separating different transistor regions on...
- Patent number 12,199,102
- Issue date Jan 14, 2025
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including silicon carbide region containing ox...
- Patent number 12,191,356
- Issue date Jan 7, 2025
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device and si...
- Patent number 12,191,359
- Issue date Jan 7, 2025
- Fuji Electric Co., Ltd.
- Yu Kurioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 12,191,386
- Issue date Jan 7, 2025
- Hyundai Mobis Co., Ltd.
- Jeong Mok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide wafer and method for manufacturing the same
- Patent number 12,188,151
- Issue date Jan 7, 2025
- Denso Corporation
- Hiroaki Fujibayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...
- Patent number 12,188,152
- Issue date Jan 7, 2025
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Techniques for fabricating charge balanced (CB) trench-metal-oxide-...
- Patent number 12,191,384
- Issue date Jan 7, 2025
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for silicon carbide gate formation
- Patent number 12,191,360
- Issue date Jan 7, 2025
- Applied Materials, Inc.
- Yi Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in finFET channels from an adjacent region
- Patent number 12,191,309
- Issue date Jan 7, 2025
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and manufacturing method therefor
- Patent number 12,183,818
- Issue date Dec 31, 2024
- SOUTHEAST UNIVERSITY
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC composite substrate and composite substrate for semiconductor d...
- Patent number 12,183,792
- Issue date Dec 31, 2024
- NGK Insulators, Ltd.
- Kiyoshi Matsushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Notch shape of trench gate bottom corner for better breakdown volta...
- Patent number 12,183,795
- Issue date Dec 31, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Conghui Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power converter
- Patent number 12,183,774
- Issue date Dec 31, 2024
- Mitsubishi Electric Corporation
- Shiro Hino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 12,183,819
- Issue date Dec 31, 2024
- Fuji Electric Co., Ltd.
- Hiroyuki Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-to-semiconductor contact including a 2D crystal material layer
- Patent number 12,183,780
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Yeonchoo Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET gate shielding using an angled implant
- Patent number 12,183,794
- Issue date Dec 31, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a silicon carbide device
- Patent number 12,176,207
- Issue date Dec 24, 2024
- X-FAB TEXAS, INC.
- Daniel Mauch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical circuit of semiconductor channel resistor and apparatus...
- Patent number 12,176,306
- Issue date Dec 24, 2024
- Electronics and Telecommunications Research Institute
- Sang Heung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, semiconductor device manufacturing method, in...
- Patent number 12,176,398
- Issue date Dec 24, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide epitaxial substrate
- Patent number 12,176,399
- Issue date Dec 24, 2024
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including current spread region
- Patent number 12,176,396
- Issue date Dec 24, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE POWER DEVICE WITH IMPROVED ROBUSTNESS AND CORRESPON...
- Publication number 20250038060
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar JFET Device with Reduced Gate Resistance
- Publication number 20250040166
- Publication date Jan 30, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Alexander Viktorovich BOLOTNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE MATERIAL DEPOSITION ON SEMICONDUCTOR WITH PHASE TRANSITI...
- Publication number 20250038004
- Publication date Jan 30, 2025
- THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Sen YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...
- Publication number 20250040197
- Publication date Jan 30, 2025
- THE RESEARCH FOUNDATION FOR THE STATE UNIVERSTIY OF NEW YORK
- Woongje SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE
- Publication number 20250040211
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031396
- Publication date Jan 23, 2025
- Mitsubishi Electric Corporation
- Kazuya KONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SiC SEMICONDUCTOR LAYER AND RAISED PORTIO...
- Publication number 20250031428
- Publication date Jan 23, 2025
- ROHM CO., LTD.
- Seiya NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031394
- Publication date Jan 23, 2025
- FUJI ELECTRIC CO., LTD.
- Shin MIYAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE IMPLEMENTED ON INSULATING OR SEMI-INSULATI...
- Publication number 20250031407
- Publication date Jan 23, 2025
- Korea Electrotechnology Research Institute
- Hyoung Woo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE
- Publication number 20250022920
- Publication date Jan 16, 2025
- ROHM CO., LTD.
- Keisuke NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20250022953
- Publication date Jan 16, 2025
- Fuji Electric Co., Ltd.
- Takafumi UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-DEVICE SEMICONDUCTOR CHIP WITH ELECTRICAL ACCESS TO DEVICES A...
- Publication number 20250022872
- Publication date Jan 16, 2025
- Infineon Technologies Austria AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE
- Publication number 20250022926
- Publication date Jan 16, 2025
- ROHM CO., LTD.
- Keisuke NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250022950
- Publication date Jan 16, 2025
- Hyundai Motor Company
- Junghee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022796
- Publication date Jan 16, 2025
- ROHM CO., LTD.
- Seigo MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE
- Publication number 20250022916
- Publication date Jan 16, 2025
- ROHM CO., LTD.
- Keisuke NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A SILICON CARBIDE SUBSTRATE
- Publication number 20250022918
- Publication date Jan 16, 2025
- INFINEON TECHNOLOGIES AG
- Christian HECHT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE INCLUDING A TRANSFER FOIL WITH POROUS SILICON C...
- Publication number 20250022707
- Publication date Jan 16, 2025
- INFINEON TECHNOLOGIES AG
- Matteo Piccin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250022917
- Publication date Jan 16, 2025
- Hyundai Motor Company
- NackYong JOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING ACTIVATION AND OHMIC CONTACT FORMATION IN A SiC ELECTRONIC D...
- Publication number 20250022919
- Publication date Jan 16, 2025
- STMicroelectronics S.r.l.
- Simone RASCUNÁ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015138
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Atsushi SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CREATING AN OHMIC CONTACT ON A HIGH-POWER ELECTRICAL DIODE
- Publication number 20250015145
- Publication date Jan 9, 2025
- STMicroelectronics International N.V.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR RECTIFIER
- Publication number 20250015199
- Publication date Jan 9, 2025
- DIODES INCORPORATED
- Tao Long
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20250015148
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Thomas AICHINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE-BASED ELECTRONIC DEVICE AND METHOD OF MANUFACTURING...
- Publication number 20250015155
- Publication date Jan 9, 2025
- STMicroelectronics S.r.l.
- Patrick FIORENZA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250015203
- Publication date Jan 9, 2025
- HUBEI JIUFENGSHAN LABORATORY
- Jun YUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...
- Publication number 20250014897
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015171
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Masaki AONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SUBSTRATE AND SiC EPITAXIAL WAFER
- Publication number 20250015139
- Publication date Jan 9, 2025
- Resonac Corporation
- Hiromasa SUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE
- Publication number 20250006814
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Wolfgang LEHNERT
- H01 - BASIC ELECTRIC ELEMENTS

Silicon carbide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon carbide semiconductor device and method for manufacturing t...

Strained-channel fin FETs

Single sided channel mesa power junction field effect transistor

Method of manufacturing silicon carbide semiconductor device and si...

Cell structure of silicon carbide MOSFET device, and power semicond...

Silicon carbide epitaxial substrate and method for manufacturing same

Manufacture of power devices having increased cross over current

Semiconductor device

Multi-level gate driver applied to SiC MOSFET

Isolation structure for separating different transistor regions on...

Semiconductor device including silicon carbide region containing ox...

Method of manufacturing silicon carbide semiconductor device and si...

Power semiconductor device and method of fabricating the same

Silicon carbide wafer and method for manufacturing the same

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...

Techniques for fabricating charge balanced (CB) trench-metal-oxide-...

Methods for silicon carbide gate formation

Method to induce strain in finFET channels from an adjacent region

Power semiconductor device and manufacturing method therefor

SiC composite substrate and composite substrate for semiconductor d...

Notch shape of trench gate bottom corner for better breakdown volta...

Power converter

Silicon carbide semiconductor device

Metal-to-semiconductor contact including a 2D crystal material layer

MOSFET gate shielding using an angled implant

Method for manufacturing a silicon carbide device

Electrical circuit of semiconductor channel resistor and apparatus...

Semiconductor device, semiconductor device manufacturing method, in...

Method of manufacturing a silicon carbide epitaxial substrate

Semiconductor device including current spread region

Patents Applicationslast 30 patents

SILICON CARBIDE POWER DEVICE WITH IMPROVED ROBUSTNESS AND CORRESPON...

Planar JFET Device with Reduced Gate Resistance

CONDUCTIVE MATERIAL DEPOSITION ON SEMICONDUCTOR WITH PHASE TRANSITI...

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...

SiC SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH SiC SEMICONDUCTOR LAYER AND RAISED PORTIO...

SEMICONDUCTOR DEVICE

SIC SEMICONDUCTOR DEVICE IMPLEMENTED ON INSULATING OR SEMI-INSULATI...

SIC SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

MULTI-DEVICE SEMICONDUCTOR CHIP WITH ELECTRICAL ACCESS TO DEVICES A...

SIC SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SIC SEMICONDUCTOR DEVICE

SEMICONDUCTOR DIE WITH A SILICON CARBIDE SUBSTRATE

COMPOSITE SUBSTRATE INCLUDING A TRANSFER FOIL WITH POROUS SILICON C...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

DOPING ACTIVATION AND OHMIC CONTACT FORMATION IN A SiC ELECTRONIC D...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR CREATING AN OHMIC CONTACT ON A HIGH-POWER ELECTRICAL DIODE

SEMICONDUCTOR RECTIFIER

TRANSISTOR DEVICE

SILICON CARBIDE-BASED ELECTRONIC DEVICE AND METHOD OF MANUFACTURING...

SCHOTTKY BARRIER DIODE DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...

SEMICONDUCTOR DEVICE

SiC SUBSTRATE AND SiC EPITAXIAL WAFER

SILICON CARBIDE DEVICE