Embodiments described herein relate generally to a semiconductor device.
A semiconductor device such as an FPGA (Field Programmable Gate Array) can be configured to have logic blocks having predetermined logic functions and connection blocks that connect the logic blocks to a bus which are arranged two-dimensionally in a repeated pattern. In this case, it is desired to reduce the chip area of the semiconductor device.
In general, according to one embodiment, there is provided a semiconductor device including a logic block and a connection block. The connection block can electrically connect the logic block to a first bus. The connection block includes multiple unit configurations. The unit configuration in the connection block has a first line, a second line, a first variable resistance element, a third line, a second variable resistance element, a fourth line, and a third variable resistance element. The first line extends along a first direction. The second line is placed above the first line. The second line extends along a second direction. The second direction intersects with the first direction. The first variable resistance element is placed between the first line and the second line. The first variable resistance element has one end electrically connected to the first line and another end electrically connected to the second line. The third line is placed above the second line. The third line extends along the first direction. The second variable resistance element is placed between the second line and the third line. The second variable resistance element has one end electrically connected to the second line and another end electrically connected to the third line. A fourth line is placed above the third line. The fourth line extends along the second direction. The third variable resistance element is placed between the third line and the fourth line. The third variable resistance element has one end electrically connected to the third line and another end electrically connected to the fourth line.
Exemplary embodiments of a semiconductor device will be explained below in detail with reference to the accompanying drawings. The present invention is not limited to the following embodiments.
A semiconductor device 1 according to the embodiment will be described. The semiconductor device 1 is one which can be dynamically reconfigured and is configured such that connections of lines can be changed by software after the production. Thus, the development of an integrated circuit can be made shorter in delivery time and lower in cost.
The semiconductor device 1 is, for example, an island style of FPGA (Field Programmable Gate Array). In the semiconductor device 1 such as an FPGA, multiple basic tiles BT0 to BT5 are arranged two-dimensionally as shown in
In the semiconductor device 1, buses BUS1 extending in the E and W directions and buses BUS2 extending in the N and S directions, cross each other in a grid pattern to connect the multiple basic tiles BT0 to BT5.
Each basic tile BT0 to BT5 has a logic block LB, connection blocks CB1, CB2, and a switch block SB. The logic block LB performs logic operations and outputs logic information to other logic blocks LB or the like. The connection block CB1 has multiple switches placed at points indicated by filled circles and can electrically connect the logic block LB to the bus BUS1. The connection block CB2 has multiple switches placed at points indicated by filled circles and can electrically connect the logic block LB to the bus BUS2. The switch block SB has multiple switches placed at points indicated by filled circles and can connect one of the bus BUS1 and bus BUS2 to the other.
The semiconductor device 1 can be configured to have the connection blocks CB1, connection blocks CB2, and switch blocks SB arranged two-dimensionally in a repeated pattern, each of which includes multiple switches. In this case, if each switch is constituted by a pass transistor having an SRAM connected to its gate, the chip area of the semiconductor device 1 is likely to increase because the layout area of the SRAM is large. In contrast, by making each switch be constituted by a variable resistance element (e.g., an ReRAM element or MRAM element) that can be made to transition between a low resistance state and a high resistance state by the voltage applied across it, the SRAM becomes unnecessary, so that the chip area of the semiconductor device 1 can be reduced.
However, if an ‘SRAM plus a pass transistor’ is replaced with a variable resistance element, then multiple variable resistance elements are arranged along a plane direction as shown in
Accordingly, in the present embodiment, variable resistance elements are multi-layered, so that the variable resistance elements are arranged along a stacking direction as shown in
For example, in the semiconductor device 1, an ‘1’ layer, ‘A’ layer, ‘0’ layer, and ‘B’ layer are stacked as line layers in that order. A variable resistance element R1 is placed at the position at which a line L1 in the ‘1’ layer and a line L2 in the ‘A’ layer placed above intersect. A variable resistance element R2 is placed at the position at which the line L2 in the ‘A’ layer and a line L3 in the ‘0’ layer placed above intersect. A variable resistance element R3 is placed at the position at which the line L3 in the ‘0’ layer and a line L4 in the ‘B’ layer placed above intersect. Thus, with the device configuration shown in
However, this multi-layering causes it to become difficult to place a variable resistance element R4 at the position at which the line L4 and the line L1 intersect as enclosed by a broken line in the circuit diagram of
Specifically, for the configuration inside the connection block CB1 shown in
The connection block CB1 has input sides 11, 12, 13 and output sides 21, 22, 23 as shown in
The input side 11 is electrically connected to a logic block LB (see
The output side 21 is electrically connected to the logic block LB (see
Here, consider a basic configuration 10a where switches are placed at all connection points between the signal lines Linp, Linn, Liwp, Liwn, Liep, Lien on the input sides 11 to 13 and the signal lines Lonp, Lonn, Lowp, Lown, Loep, Loen on the output sides 21 to 23 as indicated by filled circles in
In the basic configuration 10a, points enclosed by broken lines can be omitted because input and output from and in the same direction (N side->N side, W side->W side, E side->E side) would otherwise be caused. In the basic configuration 10a, points enclosed by thick dot-dashed lines can be omitted because signal lines would otherwise be switched in between the W side and the E side. In the basic configuration 10a, points enclosed by dashed-two dotted lines can be omitted because the points are where the bypass lines are connected to each other if the signal lines Liwn, Lowp, Lien, Loep, Linn, Lonn are used as bypass lines.
In the basic configuration 10a, if filled circles (switches) at points enclosed by broken lines, points enclosed by thick dot-dashed lines, and points enclosed by dashed-two dotted lines are omitted, then the circuit configuration 10 inside the connection block CB1 as shown in
The circuit configuration 10 includes multiple unit configurations UC1 to UC6. The unit configurations UC1 to UC6 correspond to the device configuration of
For example, the device configuration shown in
Or, for example, the device configuration shown in
Referring back to
That is, the connection block CB1 includes the unit configurations UC1 to UC6. The unit configuration UC1 is the type TYP1 of unit configuration electrically connected between the input side 12 and the output side 21 of the connection block CB1. In the unit configuration UC1, line L2 in the ‘A’ layer (see
The unit configuration UC2 is the type TYP1 of unit configuration electrically connected between the input side 13 and the output side 21 of the connection block CB1. In the unit configuration CU2, line L2 in the ‘A’ layer is connected to the signal line Liep of the p logic on the input side 13. Line L4 in the ‘B’ layer is connected to the signal line Lien of the n logic on the input side 13. Line L3 in the ‘0’ layer is connected to the signal line Lonp of the p logic on the output side 21. Line L1 in the ‘1’ layer is connected to the signal line Lonn of the n logic on the output side 21.
The unit configuration UC3 is the type TYP2 of unit configuration electrically connected between the input side 11 and the output side 22 of the connection block CB1. In the unit configuration UC3, line L2 in the ‘A’ layer is connected to the signal line Linp of the p logic on the input side 11. Line L4 in the ‘B’ layer is connected to the signal line Linn of the n logic on the input side 11. Line L3 in the ‘0’ layer is connected to the signal line Lown of the n logic on the output side 22. Line L1 in the ‘1’ layer is connected to the signal line Lowp of the p logic on the output side 22.
The unit configuration UC4 is the type TYP2 of unit configuration electrically connected between the input side 13 and the output side 22 of the connection block CB1. In the unit configuration UC4, line L2 in the ‘A’ layer is connected to the signal line Liep of the p logic on the input side 13. Line L4 in the ‘B’ layer is connected to the signal line Lien of the n logic on the input side 13. Line L3 in the ‘0’ layer is connected to the signal line Lown of the n logic on the output side 22. Line L1 in the ‘1’ layer is connected to the signal line Lowp of the p logic on the output side 22. In the unit configuration UC4, the variable resistance element R2 (see
The unit configuration UC5 is the type TYP2 of unit configuration electrically connected between the input side 11 and the output side 23 of the connection block CB1. In the unit configuration UC5, line L2 in the ‘A’ layer is connected to the signal line Linp of the p logic on the input side 11. Line L4 in the ‘B’ layer is connected to the signal line Linn of the n logic on the input side 11. Line L3 in the ‘0’ layer is connected to the signal line Loen of the n logic on the output side 23. Line L1 in the ‘1’ layer is connected to the signal line Loep of the p logic on the output side 23.
The unit configuration UC6 is the type TYP2 of unit configuration electrically connected between the input side 12 and the output side 23 of the connection block CB1. In the unit configuration UC6, line L2 in the ‘A’ layer is connected to the signal line Liwp of the p logic on the input side 12. Line L4 in the ‘B’ layer is connected to the signal line Liwn of the n logic on the input side 12. Line L3 in the ‘0’ layer is connected to the signal line Loen of the n logic on the output side 23. Line L1 in the ‘1’ layer is connected to the signal line Loep of the p logic on the output side 23. In the unit configuration UC6, the variable resistance element R2 is not used and thus is fixed in the high resistance state. Hence, in
Likewise, the connection block CB2 shown in
The input side 111 is electrically connected to the logic block LB (see
The output side 121 is electrically connected to the logic block LB (see
Here, consider a basic configuration 110a where switches are placed at all connection points between the signal lines Liwp′, Liwn′, Lisp′, Lisn′, Linp′, Linn′ on the input sides 111 to 113 and the signal lines Lowp′, Lown′, Losp′, Losn′, Lonp′, Lonn′ on the output sides 121 to 123 as indicated by filled circles in
In the basic configuration 110a, points enclosed by broken lines can be omitted because input and output from and in the same direction (W side->W side, S side->S side, N side->N side) would otherwise be caused. In the basic configuration 110a, points enclosed by thick dot-dashed lines can be omitted because signal lines would otherwise be switched in between the S side and the N side. In the basic configuration 110a, points enclosed by dashed-two dotted lines can be omitted because the points are where the bypass lines are connected to each other if the signal lines Liwn′, Lisn′, Linn′, Lown′, Losp′, Lonp′ are used as bypass lines.
In the basic configuration 110a, if filled circles (switches) at points enclosed by broken lines, points enclosed by thick dot-dashed lines, and points enclosed by dashed-two dotted lines are omitted, then the circuit configuration 110 inside the connection block CB2 as shown in
The circuit configuration 110 includes multiple unit configurations UC7 to UC12. The unit configurations UC7 to UC12 correspond to the device configuration of
In the connection block CB2, the output side 121 is not connected to the input side 111 and is connected to the input side 112 via the type TYP1 of unit configuration UC7 and to the input side 113 via the type TYP1 of unit configuration UC8. The output side 122 is connected to the input side 111 via the type TYP2 of unit configuration UC9 and not connected to the input side 112 and is connected to the input side 113 via the type TYP2 of unit configuration UC10. The output side 123 is connected to the input side 111 via the type TYP2 of unit configuration UC11 and to the input side 112 via the type TYP2 of unit configuration UC12 and not connected to the input side 113.
That is, the connection block CB2 includes the unit configurations UC7 to UC12. The unit configuration UC7 is the type TYP1 of unit configuration electrically connected between the input side 112 and the output side 121 of the connection block CB2. In the unit configuration UC7, line L2 in the ‘A’ layer (see
The unit configuration UC8 is the type TYP1 of unit configuration electrically connected between the input side 113 and the output side 121 of the connection block CB2. In the unit configuration CUB, line L2 in the ‘A’ layer is connected to the signal line Linp′ of the p logic on the input side 113. Line L4 in the ‘B’ layer is connected to the signal line Linn′ of the n logic on the input side 113. Line L3 in the ‘0’ layer is connected to the signal line Lowp′ of the p logic on the output side 121. Line L1 in the ‘1’ layer is connected to the signal line Lown′ of the n logic on the output side 121.
The unit configuration UC9 is the type TYP2 of unit configuration electrically connected between the input side 111 and the output side 122 of the connection block CB2. In the unit configuration UC9, line L2 in the ‘A’ layer is connected to the signal line Liwp′ of the p logic on the input side 111. Line L4 in the ‘B’ layer is connected to the signal line Liwn′ of the n logic on the input side 111. Line L3 in the ‘0’ layer is connected to the signal line Losn′ of the n logic on the output side 122. Line L1 in the ‘1’ layer is connected to the signal line Losp′ of the p logic on the output side 122.
The unit configuration UC10 is the type TYP2 of unit configuration electrically connected between the input side 113 and the output side 122 of the connection block CB2. In the unit configuration UC10, line L2 in the ‘A’ layer is connected to the signal line Linp′ of the p logic on the input side 113. Line L4 in the ‘B’ layer is connected to the signal line Linn′ of the n logic on the input side 113. Line L3 in the ‘0’ layer is connected to the signal line Losn′ of the n logic on the output side 122. Line L1 in the ‘1’ layer is connected to the signal line Losp′ of the p logic on the output side 122. In the unit configuration UC10, the variable resistance element R2 is not used and thus is fixed in the high resistance state. Hence, in
The unit configuration UC11 is the type TYP2 of unit configuration electrically connected between the input side 111 and the output side 123 of the connection block CB2. In the unit configuration UC11, line L2 in the ‘A’ layer is connected to the signal line Liwp′ of the p logic on the input side 111. Line L4 in the ‘B’ layer is connected to the signal line Liwn′ of the n logic on the input side 111. Line L3 in the ‘0’ layer is connected to the signal line Lonn′ of the n logic on the output side 123. Line L1 in the ‘1’ layer is connected to the signal line Lonp′ of the p logic on the output side 123.
The unit configuration UC12 is the type TYP2 of unit configuration electrically connected between the input side 112 and the output side 123 of the connection block CB2. In the unit configuration UC12, line L2 in the ‘A’ layer is connected to the signal line Lisp′ of the p logic on the input side 112. Line L4 in the ‘B’ layer is connected to the signal line Lisn′ of the n logic on the input side 112. Line L3 in the ‘0’ layer is connected to the signal line Lonn′ of the n logic on the output side 123. Line L1 in the ‘1’ layer is connected to the signal line Lonp′ of the p logic on the output side 123. In the unit configuration UC12, the variable resistance element R2 is not used and thus is fixed in the high resistance state. Hence, in
Likewise, the connection block SB shown in
The input side 211 is electrically connected to the portion 4 of the bus BUS2 (see
The output side 221 is electrically connected to the portion 4 of the bus BUS2 (see
Here, consider a basic configuration 210a where switches are placed at all connection points between the signal lines Linp″, Linn″, Liwp″, Liwn″, Lisp″, Lisn″, Liep″, Lien″ on the input sides 211 to 214 and the signal lines Lonp″, Lonn″, Lowp″, Lown″, Losp″, Losn″, Lonp″, Lonn″ on the output sides 221 to 224 as indicated by filled circles in
In the basic configuration 210a, points enclosed by broken lines can be omitted because input and output from and in the same direction (N side->N side, W side->W side, S side->S side, E side->E side) would otherwise be caused. In the basic configuration 210a, points enclosed by thick dot-dashed lines can be omitted because signal lines would otherwise be switched in between the W side and the E side or the S side and the N side. In the basic configuration 210a, points enclosed by dashed-two dotted lines can be omitted because the points are where the bypass lines are connected to each other if the signal lines Linn″, Liwn″, Lisn″, Lien″, Lonn″, Liwp″, Lisn″, Liep″ are used as bypass lines.
In the basic configuration 210a, if filled circles (switches) at points enclosed by broken lines, points enclosed by thick dot-dashed lines, and points enclosed by dashed-two dotted lines are omitted, then the circuit configuration 210 inside the switch block SB as shown in
The circuit configuration 210 includes multiple unit configurations UC13 to UC24. The unit configurations UC13 to UC24 correspond to the device configuration of
In the switch block SB, the output side 221 is not connected to the input side 211 and is connected to the input side 212 via the type TYP1 of unit configuration UC13 and to the input side 213 via the type TYP1 of unit configuration UC14 and to the input side 214 via the type TYP1 of unit configuration UC15.
The output side 222 is connected to the input side 211 via the type TYP2 of unit configuration UC16 and not connected to the input side 212 and is connected to the input side 213 via the type TYP2 of unit configuration UC17 and to the input side 214 via the type TYP2 of unit configuration UC18.
The output side 223 is connected to the input side 211 via the type TYP1 of unit configuration UC19 and to the input side 212 via the type TYP1 of unit configuration UC20 and not connected to the input side 213 and is connected to the input side 214 via the type TYP1 of unit configuration UC21.
The output side 224 is connected to the input side 211 via the type TYP2 of unit configuration UC22 and to the input side 212 via the type TYP2 of unit configuration UC23 and to the input side 213 via the type TYP2 of unit configuration UC24 and not connected to the input side 214.
That is, the switch block SB includes the unit configurations UC13 to UC24. The unit configuration UC13 is the type TYP1 of unit configuration electrically connected between the input side 212 and the output side 221 of the switch block SB. In the unit configuration UC13, line L2 in the ‘A’ layer (see
The unit configuration UC14 is the type TYP1 of unit configuration electrically connected between the input side 213 and the output side 221 of the switch block SB. In the unit configuration UC14, line L2 in the ‘A’ layer (see
The unit configuration UC15 is the type TYP1 of unit configuration electrically connected between the input side 214 and the output side 221 of the switch block SB. In the unit configuration UC15, line L2 in the ‘A’ layer (see
The unit configuration UC16 is the type TYP2 of unit configuration electrically connected between the input side 211 and the output side 222 of the switch block SB. In the unit configuration UC16, line L2 in the ‘A’ layer (see
The unit configuration UC17 is the type TYP2 of unit configuration electrically connected between the input side 213 and the output side 222 of the switch block SB. In the unit configuration UC17, line L2 in the ‘A’ layer (see
The unit configuration UC18 is the type TYP2 of unit configuration electrically connected between the input side 214 and the output side 222 of the switch block SB. In the unit configuration UC18, line L2 in the ‘A’ layer (see
The unit configuration UC19 is the type TYP1 of unit configuration electrically connected between the input side 211 and the output side 223 of the switch block SB. In the unit configuration UC19, line L2 in the ‘A’ layer (see
The unit configuration UC20 is the type TYP1 of unit configuration electrically connected between the input side 212 and the output side 223 of the switch block SB. In the unit configuration UC20, line L2 in the ‘A’ layer (see
The unit configuration UC21 is the type TYP1 of unit configuration electrically connected between the input side 214 and the output side 223 of the switch block SB. In the unit configuration UC21, line L2 in the ‘A’ layer (see
The unit configuration UC22 is the type TYP2 of unit configuration electrically connected between the input side 211 and the output side 224 of the switch block SB. In the unit configuration UC22, line L2 in the ‘A’ layer (see
The unit configuration UC23 is the type TYP2 of unit configuration electrically connected between the input side 212 and the output side 224 of the switch block SB. In the unit configuration UC23, line L2 in the ‘A’ layer (see
The unit configuration UC24 is the type TYP2 of unit configuration electrically connected between the input side 213 and the output side 224 of the switch block SB. In the unit configuration UC24, line L2 in the ‘A’ layer (see
As described above, in the embodiment, in the semiconductor device 1, each of the connection block CB1, connection block CB2, and switch block SB is configured to have multiple unit configurations arranged, in each of which multiple variable resistance elements are arranged along a stacking direction (multi-layered). Thus, the layout area of each of the connection block CB1, connection block CB2, and switch block SB can be reduced as compared with the case where variable resistance elements are arranged along plane directions. As a result, the chip area of the semiconductor device 1 can be reduced.
Further, in the embodiment, as unit configurations, there are prepared two types, the type TYP1 of unit configuration where signal line of the n logic on the input side and signal line of the n logic on the output side are not connected via variable resistance elements and the type TYP2 of unit configuration where signal line of the n logic on the input side and signal line of the p logic on the output side are not connected via variable resistance elements. Then in configuring each of the connection block CB1, connection block CB2, and switch block SB, either the type TYP1 of unit configuration or the type TYP2 of unit configuration is selected and placed according to the line connection relation logically required of the location where it is to be placed. With these arrangements, each of the unit configurations to form each of the connection block CB1, connection block CB2, and switch block SB can be multi-layered maintaining the logical line connection relations.
It should be noted that, in programming (off state->on state) the variable resistance elements, a set voltage Vset is applied across variable resistance elements to be turned on so that they are changed from the high resistance state to the low resistance state. At this time, in order not to turn on other variable resistance elements, for example, with multiple lines on the output side being at 0 V, lines connected to variable resistance elements to be turned on from among the multiple lines on the output side can be set at Vdd (≧Vset), and the other lines can be set at Vdd/2 (<Vset).
In erasing (on state->off state) the variable resistance elements, a reset voltage Vreset is applied across variable resistance elements to be turned off so that they are changed from the low resistance state to the high resistance state. The reset voltage Vreset of the same polarity as the set voltage Vset is applied if the variable resistance element is of a unipolar type, and the reset voltage Vreset of opposite polarity to that of the set voltage Vset is applied if the variable resistance element is of a bipolar type. The absolute value of the reset voltage Vreset can be smaller than that of the set voltage Vset.
Further, in a semiconductor device 1′, the basic tiles may have a form in which no connection blocks are placed as shown in
Specifically, the switch block SB′ shown in
The output side 321 is electrically connected to the logic block LB (see
Here, consider a basic configuration 310a where switches are placed at all connection points between the signal lines Libp, Libn, Linp, Linn, Liwp, Liwn, Lisp, Lisn, Liep, Lien on the input sides 311 to 315 and the signal lines Lobp, Lobn, Lonp, Lonn, Lowp, Lown, Losp, Losn, Loep, Loen on the output sides 321 to 325 as indicated by filled circles in
In the basic configuration 310a, points enclosed by broken lines can be omitted because input and output from and in the same direction (LB side->LB side, N side->N side, W side->W side, S side->S side, E side->E side) would otherwise be caused. In the basic configuration 310a, points enclosed by thick dot-dashed lines can be omitted because signal lines would otherwise be switched in between the W side and the E side or the S side and the N side. In the basic configuration 310a, points enclosed by dashed-two dotted lines can be omitted because the points are where the bypass lines are connected to each other if the signal lines Linn″, Liwn″, Lisn″, Lien″, Lonn″, Liwp″, Lisn″, Liep″ are used as bypass lines.
In the basic configuration 310a, if filled circles (switches) at points enclosed by broken lines, points enclosed by thick dot-dashed lines, and points enclosed by dashed-two dotted lines are omitted, then the circuit configuration 310 inside the switch block SB′ as shown in
The circuit configuration 310 includes multiple unit configurations UC25 to UC42. The unit configurations UC25 to UC42 correspond to the device configuration of
In the switch block SB′, the output side 321 is not connected to the input side 311 and is connected to the input side 312 via the type TYP2 of unit configuration UC25, to the input side 313 via the type TYP2 of unit configuration UC26, to the input side 314 via the type TYP2 of unit configuration UC27, and to the input side 315 via the type TYP2 of unit configuration UC28.
The output side 322 is connected to the input side 311 via the type TYP1 of unit configuration UC29 and not connected to the input side 312 and is connected to the input side 313 via the type TYP1 of unit configuration UC30, to the input side 314 via the type TYP1 of unit configuration UC31, and to the input side 315 via the type TYP1 of unit configuration UC32.
The output side 323 is connected to the input side 311 via the type TYP2 of unit configuration UC33 and to the input side 312 via the type TYP2 of unit configuration UC34 and not connected to the input side 313 and is connected to the input side 314 via the type TYP2 of unit configuration UC35 and to the input side 315 via the type TYP2 of unit configuration UC36.
The output side 324 is connected to the input side 311 via the type TYP1 of unit configuration UC37 and to the input side 312 via the type TYP1 of unit configuration UC38 and to the input side 313 via the type TYP1 of unit configuration UC39 and not connected to the input side 314 and is connected to the input side 315 via the type TYP1 of unit configuration UC40.
The output side 325 is connected to the input side 311 via the type TYP2 of unit configuration UC41, to the input side 312 via the type TYP2 of unit configuration UC42, to the input side 313 via the type TYP2 of unit configuration UC43, and to the input side 314 via the type TYP2 of unit configuration UC44 and not connected to the input side 315.
That is, the switch block SB′ includes the unit configurations UC25 to UC44. The unit configuration UC25 is the type TYP2 of unit configuration electrically connected between the input side 312 and the output side 321 of the switch block SB. In the unit configuration UC25, line L2 in the ‘A’ layer (see
The unit configuration UC26 is the type TYP2 of unit configuration electrically connected between the input side 313 and the output side 321 of the switch block SB′. In the unit configuration UC26, line L2 in the ‘A’ layer (see
The unit configuration UC27 is the type TYP2 of unit configuration electrically connected between the input side 314 and the output side 321 of the switch block SB′. In the unit configuration UC27, line L2 in the ‘A’ layer (see
The unit configuration UC28 is the type TYP2 of unit configuration electrically connected between the input side 315 and the output side 321 of the switch block SB′. In the unit configuration UC28, line L2 in the ‘A’ layer (see
The unit configuration UC29 is the type TYP1 of unit configuration electrically connected between the input side 311 and the output side 322 of the switch block SB′. In the unit configuration UC29, line L2 in the ‘A’ layer (see
The unit configurations UC30, UC31, UC32 are similar to the unit configurations UC13, UC14, UC15 (see
The unit configuration UC33 is the type TYP2 of unit configuration electrically connected between the input side 311 and the output side 323 of the switch block SB′. In the unit configuration UC33, line L2 in the ‘A’ layer (see
The unit configurations UC34, UC35, UC36 are similar to the unit configurations UC16, UC17, UC18 (see
The unit configuration UC37 is the type TYP1 of unit configuration electrically connected between the input side 311 and the output side 324 of the switch block SB′. In the unit configuration UC37, line L2 in the ‘A’ layer (see
The unit configurations UC38, UC39, UC40 are similar to the unit configurations UC19, UC20, UC21 (see
The unit configuration UC41 is the type TYP2 of unit configuration electrically connected between the input side 311 and the output side 325 of the switch block SB′. In the unit configuration UC41, line L2 in the ‘A’ layer (see
The unit configurations UC42, UC43, UC44 are similar to the unit configurations UC22, UC23, UC24 (see
In this way, in the semiconductor device 1′, the switch block SB′ is configured to have multiple unit configurations arranged in which multiple variable resistance elements are arranged along a stacking direction (multi-layered). Thus, the layout area of the switch block SB′ can be reduced as compared with the case where variable resistance elements are arranged along plane directions. As a result, the chip area of the semiconductor device 1′ can be reduced.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
This application is based upon and claims the benefit of priority from U.S. Provisional Application No. 62/306,451, filed on Mar. 10, 2016; the entire contents of which are incorporated herein by reference.
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