Nitride compounds

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CPC
H01L29/2003

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/2003Nitride compounds

Industries

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Patents Grantslast 30 patents

Information Patent Grant
HEMT with stair-like compound layer at drain
- Patent number 12,224,333
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PGaN enhancement mode HEMTs with dopant diffusion spacer
- Patent number 12,224,337
- Issue date Feb 11, 2025
- Intel Corporation
- Michael Beumer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 12,224,339
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction semiconductor device with low on-resistance
- Patent number 12,224,340
- Issue date Feb 11, 2025
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure having diffusion barrier layer
- Patent number 12,224,322
- Issue date Feb 11, 2025
- GlobalWafers Co., Ltd.
- Tzu-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,331
- Issue date Feb 11, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for control of sidewall orientation in vertical g...
- Patent number 12,224,344
- Issue date Feb 11, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT and fabricating method of the same
- Patent number 12,224,338
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Huai-Tzu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplifier with quasi-static drain voltage adjustment
- Patent number 12,224,721
- Issue date Feb 11, 2025
- Qorvo US, Inc.
- Joel Lawrence Dawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device
- Patent number 12,218,204
- Issue date Feb 4, 2025
- SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
- Ha Jong Bong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric devices including a single crystalline ferroelectric...
- Patent number 12,219,776
- Issue date Feb 4, 2025
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,218,207
- Issue date Feb 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including compound and nitride members
- Patent number 12,218,232
- Issue date Feb 4, 2025
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage gallium nitride vertical PN diode
- Patent number 12,218,255
- Issue date Feb 4, 2025
- National Technology & Engineering Solutions of Sandia, LLC
- Luke Yates
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor including field plate regions and manufacturing pro...
- Patent number 12,218,231
- Issue date Feb 4, 2025
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 12,218,233
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,218,128
- Issue date Feb 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode and method of manufacturing such a diode
- Patent number 12,218,254
- Issue date Feb 4, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Julien Buckley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of manufacturing the same
- Patent number 12,218,206
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sunkyu Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,218,229
- Issue date Feb 4, 2025
- United Microelectronics Corp.
- Ming-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-GaN high-electron-mobility transistor
- Patent number 12,218,230
- Issue date Feb 4, 2025
- National Sun Yat-sen University
- Ting-Chang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 12,211,923
- Issue date Jan 28, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride based depletion mode differential amplifiers and...
- Patent number 12,212,289
- Issue date Jan 28, 2025
- MACOM Technology Solutions Holdings, Inc.
- Jeremy Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,211,839
- Issue date Jan 28, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,211,912
- Issue date Jan 28, 2025
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Black phosphorus-two dimensional material complex and method of man...
- Patent number 12,211,904
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 12,206,018
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,206,048
- Issue date Jan 21, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,205,905
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Yen-Hsing Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP III-NITRIDE SEMICONDUCTOR STRUCTURE ON SILICON-ON-INSULATOR A...
- Publication number 20250056858
- Publication date Feb 13, 2025
- SOITEC
- Christelle Veytizou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20250056927
- Publication date Feb 13, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250056827
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...
- Publication number 20250056830
- Publication date Feb 13, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES FOR INTEGRATED FRONT-END CIRCUITS
- Publication number 20250056878
- Publication date Feb 13, 2025
- MONDE Wireless Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDER VOLTAGE LOCK-OUT CIRCUIT
- Publication number 20250055451
- Publication date Feb 13, 2025
- Tagore Technology, Inc.
- Pramit SARKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056826
- Publication date Feb 13, 2025
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...
- Publication number 20250048667
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048668
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liuchang MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048713
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Zhiwen DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048670
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048674
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...
- Publication number 20250040171
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040174
- Publication date Jan 30, 2025
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...
- Publication number 20250040210
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20250040220
- Publication date Jan 30, 2025
- Vanguard International Semiconductor Corporation
- Chen-Dong Tzou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20250040221
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...
- Publication number 20250040244
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING AN OHMIC CONTACT FOR A HEMT DEVICE
- Publication number 20250040164
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...
- Publication number 20250040175
- Publication date Jan 30, 2025
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250040212
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Takuya KITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031396
- Publication date Jan 23, 2025
- Mitsubishi Electric Corporation
- Kazuya KONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED HEMT STRUCTURE HAVING MULTI-THRESHOLD VOLTAGE, AND PREPAR...
- Publication number 20250031398
- Publication date Jan 23, 2025
- Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology
- Yaozong ZHONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID TYPE AlGaN/GaN HEMT DEVICE
- Publication number 20250031402
- Publication date Jan 23, 2025
- CHIH-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF, AND SEMICONDUC...
- Publication number 20250031424
- Publication date Jan 23, 2025
- Hatchip Co., Ltd
- Yonghui Frank FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUPLED GUARD RINGS FOR EDGE TERMINATION
- Publication number 20250031416
- Publication date Jan 23, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford DROWLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250031437
- Publication date Jan 23, 2025
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Xiaoming LIU
- H01 - BASIC ELECTRIC ELEMENTS

Nitride compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

HEMT with stair-like compound layer at drain

PGaN enhancement mode HEMTs with dopant diffusion spacer

High electron mobility transistor

Heterojunction semiconductor device with low on-resistance

Epitaxial structure having diffusion barrier layer

Semiconductor device

Method and system for control of sidewall orientation in vertical g...

HEMT and fabricating method of the same

Power amplifier with quasi-static drain voltage adjustment

Engineered substrate structures for power and RF applications

Semiconductor device

Ferroelectric devices including a single crystalline ferroelectric...

Method for manufacturing semiconductor device

Semiconductor device including compound and nitride members

High voltage gallium nitride vertical PN diode

HEMT transistor including field plate regions and manufacturing pro...

High electron mobility transistor and method of manufacturing the same

Nitride-based semiconductor bidirectional switching device and meth...

Semiconductor diode and method of manufacturing such a diode

Power semiconductor device and method of manufacturing the same

Semiconductor structure and method for forming the same

P-GaN high-electron-mobility transistor

Semiconductor structure and forming method thereof

Group III nitride based depletion mode differential amplifiers and...

Nitride semiconductor device

Semiconductor device and fabrication method thereof

Black phosphorus-two dimensional material complex and method of man...

High electron mobility transistor and method for fabricating the same

Epitaxial oxide materials, structures, and devices

Semiconductor structure

Patents Applicationslast 30 patents

GROUP III-NITRIDE SEMICONDUCTOR STRUCTURE ON SILICON-ON-INSULATOR A...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...

DEVICES FOR INTEGRATED FRONT-END CIRCUITS

UNDER VOLTAGE LOCK-OUT CIRCUIT

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF

HIGH-ELECTRON-MOBILITY TRANSISTOR

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...

METHOD FOR MANUFACTURING AN OHMIC CONTACT FOR A HEMT DEVICE

A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

GAN-BASED HEMT STRUCTURE HAVING MULTI-THRESHOLD VOLTAGE, AND PREPAR...

HYBRID TYPE AlGaN/GaN HEMT DEVICE

SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF, AND SEMICONDUC...

COUPLED GUARD RINGS FOR EDGE TERMINATION

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF