C. Kaanta, et al., Submicron Wiring Technology With Tungston And Planarization, IEDM Conference Proceedings, IEEE, 9.3, pp. 209-212 (1987). |
R. Blewer, et al., Conditions For Tunnel Formation In LPCVD Tungston Films On Single Crystal Silicon, Materials Research Society, pp. 115-122 (1988). |
E. Broadbent, et al., Some Recent Observations On Tunnel Defect Formation During High Temperature Post-Deposition Anneal of CVD W On Sl, Materials Research Society, pp. 111-113 (1988). |
R. Blewer, et al., Detrimental Effects Of Residual Silicon Oxides On LPCVD Tungsten Depositions In Shallow Junction Devices, Materials Research Society, pp. 235-246 (1987). |
J.T. Clemens, NMOS Technology-A Review, The Electrochemical Society, Extended Abstracts, vol. 79-2, pp. 812-814 (1979). |
V. Wells, Tungston And Other Refractory Metals For VLSA Applications, 1985 Matt. Res. Soc., (Pittsburg, PA, USA). |
V.V.S. Rana, et al., Selective Tungston Plugs On Silicon For Advanced CMOS Devices, Technical Digest of the International Electron Devices Meeting, Dec. 6, 1987, IEEE, Washington, D.C., pp. 862-864. |
S. Sachdev et al., Blanket Tungston Applications In VLSI Processing, 1985 Material Research Society, pp. 475-482. |
S.M. Sze, Semiconductor Devices: Physics And Technology, John Wiley & Sons, New York (1985), pp. 113, 360-361. |