An epoxy resin composition comprising (A) a mixture of a naphthalene type epoxy resin and an anthracene type epoxy resin, (B) a curing agent in the form of a naphthalene type phenolic resin, and (C) an inorganic filler is best suited for semiconductor encapsulation.
Description
BRIEF DESCRIPTION OF THE DRAWING
FIG. 1 is a diagrammatic representation of the IR reflow schedule for reflow resistance measurement.
Claims
1. An epoxy resin composition for semiconductor encapsulation comprising
(A) an epoxy resin,(B) a phenolic resin curing agent having at least one substituted or unsubstituted naphthalene ring in a molecule, and(C) an inorganic filler,said epoxy resin (A) essentially comprising an epoxy resin having the general formula (1) and an epoxy resin having the general formula (2):
2. The epoxy resin composition of claim 1, wherein the phenolic resin (B) is a phenolic resin having the general formula (3):
3. The epoxy resin composition of claim 2, wherein 25 to 100 parts by weight of the phenolic resin having formula (3) is included per 100 parts by weight of entire phenolic resins.
4. The epoxy resin composition of claim 1, wherein the epoxy resin of formula (1) and the epoxy resin of formula (2) are present in a weight ratio between 20/80 and 80/20.
5. A semiconductor device encapsulated with the epoxy resin composition of claim 1.
6. The semiconductor device of claim 5, comprising a resin or metal substrate, and a semiconductor member mounted on one surface of the resin or metal substrate, wherein the semiconductor member is encapsulated with the epoxy resin composition substantially solely on the one surface of the resin or metal substrate.
Patent Application
20070207322
