The present invention relates to a semiconductor film and a photoelectric conversion device.
In recent years, problems of exhaustion of energy resources and global environmental issues such as increasing CO2 in the atmosphere have driven demands for development of clean energy. In particular, utilization of solar cells for photovoltaic power generation has been developed, been put into practical use, and been expanded as a new energy source.
The current most popular solar cell is a bulk crystal type solar cell in which a bulk crystal such as monocrystalline silicon or polycrystalline silicon is used in a photoelectric conversion layer converting light energy into electrical energy. Increase in amount of produced bulk crystal type solar cells leads to decline in price of solar cell modules, and thus, the spread of photovoltaic power generation systems is rapidly expanding.
Development of a thin film type solar cell is also in progress as a next-generation solar cell technique capable of significantly reducing an amount of used materials and further reducing the manufacturing cost as compared with the aforementioned bulk crystal type solar cell because a photoelectric conversion layer is formed of a thin film.
The thin film type solar cell as described above includes, for example, a thin film silicon solar cell (such as an amorphous silicon solar cell, a microcrystalline silicon solar cell, and an amorphous silicon/microcrystalline silicon tandem solar cell), a CIS (CuInSe2) thin film solar cell, a CIGS (Cu(In, Ga)Se2) thin film solar cell, a CdTe solar cell, and the like.
The aforementioned thin film type solar cell is generally fabricated by stacking thin films constituting a semiconductor layer and an electrode layer on a large-area substrate such as glass and metal foil by means of a vacuum film forming device such as a plasma CVD device, a sputtering device or a vapor deposition device.
Therefore, by increasing the area of the substrate surface and accordingly increasing the size of the manufacturing device, the large-area thin film type solar cell can be obtained in one film formation. Thus, the manufacturing efficiency can be enhanced and the manufacturing cost can be reduced in this respect as well.
PTL 1 (Japanese Patent Laying-Open No. 2009-38317), for example, discloses a microcrystalline silicon solar cell that is one example of the thin film type solar cell.
The conventional microcrystalline silicon solar cell shown in
In the conventional microcrystalline silicon solar cell shown in
Therefore, as shown in
The aforementioned problem is not a problem limited to the microcrystalline silicon solar cells but a problem common to the entire semiconductor devices that use a semiconductor film containing a crystalline substance.
In light of the aforementioned circumstances, an object of the present invention is to provide a semiconductor film capable of effectively suppressing peeling from a substrate, and a photoelectric conversion device including the semiconductor film.
The present invention is directed to a semiconductor film formed on a surface of a substrate and containing a crystalline substance, wherein the semiconductor film has a central region including a center of a surface of the semiconductor film and a peripheral region located around the central region, and a crystallization ratio of the semiconductor film in the peripheral region is higher than a crystallization ratio in the central region.
Preferably, the crystallization ratio of the semiconductor film according to the present invention in the peripheral region is 4 or more.
In addition, preferably, the crystallization ratio of the semiconductor film according to the present invention in the central region is 2 or more.
In addition, preferably, in the semiconductor film according to the present invention, the surface of the semiconductor film has an area of 1 m2 or larger.
In addition, in the semiconductor film according to the present invention, assuming that: a point A represents a center point of the surface of the semiconductor film; a point B represents one arbitrary point on an outer perimeter of the surface of the semiconductor film; a line segment AB represents a line segment connecting the point A and the point B; a point C and a point D represent two different points on the line segment AB; when a ratio of a length of a line segment AC connecting the point A and the point C, a length of a line segment CD connecting the point C and the point D, and a length of a line segment DB connecting the point D and the point B (AC:CD:DB) is 17:27:6, the central region is a region surrounded by a trajectory of the point C when the point A of the line segment AB is fixed and the point B goes around on the outer perimeter of the surface of the semiconductor film, and the peripheral region is a region between a trajectory of the point B and a trajectory of the point D when the point A of the line segment AB is fixed and the point B goes around on the outer perimeter of the surface of the semiconductor film; Xa represents the crystallization ratio of the semiconductor film in the central region; and Xb represents the crystallization ratio of the semiconductor film in the peripheral region, the crystallization ratio Xa and the crystallization ratio Xb preferably satisfy a following equation (i), and more preferably further satisfy a following equation (ii):
Xb≧Xa+1 (i)
Xb≧Xa+2 (ii).
In addition, the present invention is directed to a semiconductor film formed on a surface of a substrate and containing a crystalline substance, wherein the semiconductor film has a central region including a center of a surface of the semiconductor film and a peripheral region located around the central region, and assuming that: a point A represents a center point of the surface of the semiconductor film; a point B represents one arbitrary point on an outer perimeter of the surface of the semiconductor film; a line segment AB represents a line segment connecting the point A and the point B; a point C and a point D represent two different points on the line segment AB; when a ratio of a length of a line segment AC connecting the point A and the point C, a length of a line segment CD connecting the point C and the point D, and a length of a line segment DB connecting the point D and the point B (AC:CD:DB) is 17:27:6, the central region is a region surrounded by a trajectory of the point C when the point A of the line segment AB is fixed and the point B goes around on the outer perimeter of the surface of the semiconductor film, and the peripheral region is a region between a trajectory of the point B and a trajectory of the point D when the point A of the line segment AB is fixed and the point B goes around on the outer perimeter of the surface of the semiconductor film; Xa represents the crystallization ratio of the semiconductor film in the central region; and Xb represents the crystallization ratio of the semiconductor film in the peripheral region, the crystallization ratio Xa and the crystallization ratio Xb satisfy following equations (iii) and (iv):
Xb≧13−Xa (iii)
Xa≧Xb (iv).
In addition, the present invention is directed to a photoelectric conversion device fabricated by forming any one of the aforementioned semiconductor films on the substrate.
Furthermore, the present invention is directed to a photoelectric conversion device fabricated by cutting the aforementioned substrate of the photoelectric conversion device.
According to the present invention, there can be provided a semiconductor film capable of effectively suppressing peeling from a substrate, and a photoelectric conversion device including the semiconductor film.
a) shows a relationship between a crystallization ratio of the semiconductor film shown in
a) to (c) are schematic perspective views illustrating one example of a method for manufacturing the photoelectric conversion device according to the present invention.
a) is a schematic plan view of a microcrystalline Si photoelectric conversion layer on a substrate of the conventional microcrystalline silicon solar cell,
Embodiments of the present invention will be described hereinafter. In the drawings of the present invention, the same reference characters indicate the same or corresponding portions.
For example, a glass substrate, a resin substrate containing a transparent resin such as a polyimide resin, or a translucent substrate that allows light to pass therethrough such as a substrate formed by stacking a plurality of these substrates can be used as substrate 1. For example, a non-translucent substrate that does not allow light to pass therethrough such as a stainless substrate may also be used as substrate 1.
A substrate including a transparent conductive film on a surface thereof may also be used as substrate 1. For example, a tin oxide film, an ITO (Indium Tin Oxide) film, a zinc oxide film, or a conductive film that allows light to pass therethrough, such as a single layer of a film formed by adding a minute amount of impurity to these films or a plurality of layers formed by stacking a plurality of these layers, can be used as the transparent conductive film. When the transparent conductive film is formed of the plurality of layers, all layers may be made of the same material or at least one layer may be made of a material different from that of the other layers.
Protrusions and recesses are preferably formed on the surface of substrate 1. Since the protrusions and recesses are formed on the surface of substrate 1, there is a tendency that incident light coming from the substrate 1 side can be scattered and/or refracted to extend the optical path length, and the light confining effect in semiconductor film 2 can be enhanced. For example, an etching method, a method by machining such as sandblast, a method using crystal growth, or the like can be used as a method for forming the protrusions and recesses on the surface of substrate 1.
At least one side of substrate 1 preferably has a width of 1 m or larger, and further, the surface of substrate 1 preferably has an area of 1 m2 or larger. In this case, a surface of semiconductor film 2 has an area of 1 m2 or larger, and thus, there can be manufactured a large-area photoelectric conversion device including semiconductor film 2 having the large-area surface.
Semiconductor film 2 is not particularly limited as long as semiconductor film 2 is the semiconductor containing the crystalline substance. For example, microcrystalline silicon and the like including crystalline silicon and amorphous silicon can be suitably used as semiconductor film 2. In the specification, “microcrystalline silicon” includes “hydrogenated microcrystalline silicon”. “Microcrystalline silicon” also includes the case where elements such as O, C, N, and Ge are added.
Semiconductor film 2 may have any of p, i and n conductivity types. When semiconductor film 2 has the p conductivity type, boron and the like can be used, for example, as a p-type impurity with which semiconductor film 2 is doped. When semiconductor film 2 has the i conductivity type, semiconductor film 2 is not doped with the p-type impurity and an n-type impurity. When semiconductor film 2 has the n conductivity type, phosphorus and the like can be used, for example, as the n-type impurity with which semiconductor film 2 is doped.
a) shows a relationship between a crystallization ratio of semiconductor film 2 shown in
As shown in
Therefore, in semiconductor film 2 shown in
The crystallization ratio is obtained by measuring, in accordance with a Raman spectroscopy, a Raman spectrum indicated by a graph in which the vertical axis indicates a Raman scattering intensity and the horizontal axis indicates a wave number, and is defined by a peak intensity ratio Ic/Ia of magnitude Ic of peak intensity of Raman scattering intensity due to crystalline silicon having a wave number of about 520 cm−1 to magnitude Ia of peak intensity of Raman scattering intensity due to amorphous silicon having a wave number of about 480 cm−1.
The crystallization ratio of semiconductor film 2 in the peripheral region is preferably 4 or more. If the crystallization ratio of semiconductor film 2 in the peripheral region is set to 4 or more, the stress generated in the peripheral region of semiconductor film 2 can be reduced more greatly. Therefore, there is a tendency that peeling of semiconductor film 2 from substrate 1 can be suppressed more effectively.
The crystallization ratio of semiconductor film 2 in the central region is preferably 2 or more. By setting the crystallization ratio of semiconductor film 2 in the central region to 2 or more and reducing the stress generated in the central region of semiconductor film 2, the stress generated at the entire semiconductor film 2 can also be reduced. Therefore, there is a tendency that peeling of semiconductor film 2 from substrate 1 can be suppressed more effectively.
Xb≧Xa (i′)
Xb≧Xa+1 (i)
Xb≧Xa+2 (ii)
Xb≧Xa+3 (ii′)
When crystallization ratio Xa of semiconductor film 2 in central region 2b and crystallization ratio Xb of semiconductor film 2 in peripheral region 2a satisfy the relationship of the above equation (i′) and the relationship of the above equation (i), particularly when crystallization ratio Xa and crystallization ratio Xb satisfy the relationship of the above equation (ii), and further, when crystallization ratio Xa and crystallization ratio Xb satisfy the relationship of the above equation (ii′), there is a tendency that peeling of semiconductor film 2 from substrate 1 can be suppressed more effectively. This is derived from an experimental result described below.
The case has been described above, where the crystallization ratio of semiconductor film 2 in peripheral region 2a is higher than the crystallization ratio of semiconductor film 2 in central region 2b. However, when crystallization ratio Xa and crystallization ratio Xb satisfy a relationship of the following equation (iii) even if crystallization ratio Xa of semiconductor film 2 in central region 2b is equal to or higher than crystallization ratio Xb of semiconductor film 2 in peripheral region 2a as described in the following equation (iv), peeling of semiconductor film 2 from substrate 1 can be effectively suppressed. This is derived from the experimental result described below.
Xb≧13−Xa (iii)
Xa≧Xb (iv)
In the above equations (iii) and (iv), Xa represents the crystallization ratio of semiconductor film 2 in central region 2b shown in
The surface shape of semiconductor film 2 is not limited to the shape shown in
In the drawings of the present invention, solid line 21 matches a line indicating the outer perimeter of the surface of semiconductor film 2, while solid line 22 and solid line 23 are not necessarily formed on the surface of semiconductor film 2 because solid line 22 and solid line 23 are imaginary lines.
Semiconductor film 2 shown in
The vacuum film forming device shown in
When semiconductor film 2 is formed, substrate 1 is first placed on a surface of anode 32 of the vacuum film forming device shown in
Next, gate valve 39 is opened and the gas in film forming chamber 41 is drawn in by pump 40. As a result, the gas in film forming chamber 41 is discharged outside film forming chamber 41 through gas discharge pipe 37 in a direction indicated by an arrow 38, and the pressure in film forming chamber 41 is set to the pressure ranging from 10−4 to 1 Pa, for example.
Next, a raw material gas serving as a raw material of semiconductor film 2 is introduced from gas introduction pipe 33 into cathode 31 in a direction indicated by an arrow 34, and the raw material gas is introduced between cathode 31 and anode 32 from shower plate holes (not shown) provided in cathode 31 on the anode 32 side. At least one type of gas selected from the group consisting of, for example, SiH4, H2, B2H6, PH3, and CH4 can be used as the raw material gas serving as the raw material of semiconductor film 2.
Next, an AC voltage is applied between cathode 31 and anode 32 by high-frequency power supply 36 to generate a plasma of the raw material gas introduced as described above. Semiconductor film 2 is thus formed on the surface of substrate 1.
When semiconductor film 2 formed of a microcrystalline silicon film is formed using, for example, SiH4 and H2 as the raw material gas, semiconductor film 2 can be formed as follows: a system of the shower plate hole near the center of cathode 31 facing the center of the surface of substrate 1 is made independent of a system of the shower plate hole near the periphery of cathode 31 facing the periphery of the surface of substrate 1, mass flow controllers are independently attached to the respective systems, and a gas flow ratio (H2 flow rate/SiH4 flow rate) of the raw material gas introduced into a portion where the crystallization ratio is set to be high (e.g., the raw material gas introduced from the shower plate hole near the periphery of cathode 31) is set to be higher than a gas flow ratio (H2 flow rate/SiH4 flow rate) of the raw material gas introduced into the other portion (e.g., the raw material gas introduced from the shower plate hole near the center of cathode 31). The gas flow ratio (H2 flow rate/SiH4 flow rate) of the raw material gas is preferably 5 to 300.
The aforementioned pressure in film forming chamber 41 when semiconductor film 2 is formed can be set to the pressure ranging from 5×102 to 1.7×103 Pa, for example.
By adjusting the pressure in film forming chamber 41 and/or a distance between cathode 31 and anode 32, for example, the thickness of the surface of semiconductor film 2 in the in-plane direction can be adjusted.
By adjusting the diameter of the shower plate holes in the surface of cathode 31 and/or the number of the shower plate holes, for example, the thickness of the surface of semiconductor film 2 in the in-plane direction can also be adjusted.
In the vacuum film forming device shown in
Substrate 1 is formed of a translucent substrate 51 and a transparent conductive film 52 provided on a surface of translucent substrate 51. Semiconductor film 2 includes a p-type microcrystalline silicon layer 53 provided on a surface of transparent conductive film 52, an i-type microcrystalline silicon layer 54 provided on a surface of p-type microcrystalline silicon layer 53, and an n-type microcrystalline silicon layer 55 provided on a surface of i-type microcrystalline silicon layer 54.
Since description of translucent substrate 51, transparent conductive film 52 and semiconductor film 2 (a stacked structure of p-type microcrystalline silicon layer 53, i-type microcrystalline silicon layer 54 and n-type microcrystalline silicon layer 55) is similar to the above, description thereof will not be repeated here.
For example, a tin oxide film, an ITO film, a zinc oxide film, or a conductive film that allows light to pass therethrough, such as a single layer of a film formed by adding a minute amount of impurity to these films or a plurality of layers formed by stacking a plurality of these layers, can be used as transparent conductive film 9. When transparent conductive film 9 is formed of the plurality of layers, all layers may be made of the same material or at least one layer may be made of a material different from that of the other layers.
Transparent conductive film 9 is not always have to be formed. It is preferable, however, to form transparent conductive film 9 because an effect of enhancing light confinement of incident light and an effect of enhancing the light reflectivity are obtained, and the presence of transparent conductive film 9 allows suppression of diffusion of atoms constituting reflection electrode 10 into semiconductor film 2.
A conductive layer such as, for example, an Ag (silver) layer, an Al (aluminum) layer or a stacked structure of these layers can be used as reflection electrode 10. Since reflection electrode 10 can reflect light that was not absorbed in semiconductor film 2 back to semiconductor film 2, reflection electrode 10 contributes to enhancement of the photoelectric conversion efficiency. When the sub-straight-type photoelectric conversion device is used as the photoelectric conversion device, reflection electrode 10 preferably has a shape such as, for example, a comb shape that does not cover the entire surface of the photoelectric conversion device, so as to allow light to enter.
The photoelectric conversion device shown in
In the photoelectric conversion device shown in
A substrate obtained by forming transparent conductive film 52 made of SnO2 on translucent substrate 51 formed of a glass substrate and having a surface of 1000 mm wide, 1400 mm long and 4 mm thick is used as substrate 1. Transparent conductive film 52 is removed and separated in the form of strips having a predetermined spacing (approximately 7 to 18 mm) by a laser scribing method.
First pin-type photoelectric conversion layer 11 is stacked on separated transparent conductive film 52.
First pin-type photoelectric conversion layer 11 is an amorphous silicon photoelectric conversion layer formed of a stacked structure of a first p-type semiconductor layer 13, a first i-type semiconductor layer 14 and a first n-type semiconductor layer 15.
A single p-type layer such as a p-type amorphous silicon layer, a p-type amorphous silicon carbide layer or a p-type amorphous silicon nitride layer, or a plurality of layers formed by stacking a plurality of these layers can, for example, be used as first p-type semiconductor layer 13. An amorphous silicon layer can, for example, be used as first i-type semiconductor layer 14. A single n-type layer such as an n-type amorphous silicon layer or an n-type microcrystalline silicon layer, or a plurality of layers formed by stacking a plurality of these layers, or the like can, for example, be used as first n-type semiconductor layer 15.
Then, semiconductor film 2 serving as the second pin-type photoelectric conversion layer formed of the stacked structure of p-type microcrystalline silicon layer 53, i-type microcrystalline silicon layer 54 and n-type microcrystalline silicon layer 55 is stacked on first pin-type photoelectric conversion layer 11.
After semiconductor film 2 is formed, a part of first pin-type photoelectric conversion layer 11 and a part of semiconductor film 2 serving as the second pin-type photoelectric conversion layer are removed at a predetermined spacing (approximately 7 to 18 nm) by the laser scribing method. As a result, first pin-type photoelectric conversion layer 11 and semiconductor film 2 serving as the second pin-type photoelectric conversion layer are separated.
Then, transparent conductive film 9 and reflection electrode 10 are stacked on separated semiconductor film 2 in this order.
After transparent conductive film 9 and reflection electrode 10 are formed, a part of first pin-type photoelectric conversion layer 11, a part of semiconductor film 2 serving as the second pin-type photoelectric conversion layer, a part of transparent conductive film 9, and a part of reflection electrode 10 are removed and separated at a predetermined spacing (approximately 7 to 18 nm) by the laser scribing method.
The tandem-type photoelectric conversion device in which a plurality of strip-shaped thin-film photoelectric conversion elements are serially connected to one another on the entire surface of substrate 1 is thus formed.
Since the remaining description of translucent substrate 51, transparent conductive film 52, semiconductor film 2 serving as the second pin-type photoelectric conversion layer, transparent conductive film 9, and reflection electrode 10 is similar to the above, description thereof will not be repeated here.
The tandem-type photoelectric conversion device fabricated as described above was irradiated with dummy sunlight of AM1.5 (100 mW/cm2) at a temperature of 25° C. from the side of translucent substrate 51 formed of a glass substrate, and the maximum output electric power was measured. As a result, the maximum output electric power of the tandem-type photoelectric conversion device was 150.6 W.
For example, by forming aforementioned semiconductor film 2 on the surface of substrate 1, and then, cutting substrate 1, a photoelectric conversion device (other form of photoelectric conversion device) including aforementioned semiconductor film 2 on the surface of substrate 1 can also be manufactured.
The photoelectric conversion device can also be manufactured, for example, as follows: substrate 1 is first prepared as shown in a schematic perspective view in
The other form of photoelectric conversion device manufactured as described above has a cut surface 1b exposed as a result of cutting of substrate 1, and a peripheral surface 1a of substrate 1 that has already been exposed before cutting of substrate 1.
Although the photoelectric conversion device is manufactured by dividing substrate 1 into two pieces in the above, the number of division of substrate 1 is not limited to two pieces. Substrate 1 may be divided into, for example, four pieces, six pieces or the like.
Whether the photoelectric conversion device is the other form of photoelectric conversion device or not can be determined, for example, as follows.
When the photoelectric conversion device is manufactured in accordance with the first manufacturing method, a constituent component of semiconductor film 2 may adhere to peripheral surface 1a of substrate 1, whereas the constituent component of semiconductor film 2 does not adhere to cut surface 1b of substrate 1. Therefore, it may only be determined whether or not the constituent component of semiconductor film 2 adheres to the side surface of substrate 1 of the photoelectric conversion device.
When the photoelectric conversion device is manufactured in accordance with the second manufacturing method, constituent components of transparent conductive film 9 and reflection electrode 10 may adhere to peripheral surface 1a of substrate 1, whereas the constituent components of transparent conductive film 9 and reflection electrode 10 do not adhere to cut surface 1b of substrate 1. Therefore, it may only be determined whether or not the constituent components of transparent conductive film 9 and reflection electrode 10 adhere to the side surface of substrate 1 of the photoelectric conversion device.
First, a glass substrate having a surface of 1400 mm wide, 1400 mm long and 4 mm thick as shown in a schematic plan view in
Next, the composite substrate thus fabricated was placed in the film forming chamber of the vacuum film forming device, and the gas in the film forming chamber was removed until the pressure in the film forming chamber reached 0.1 Pa. Thereafter, the raw material gas, which was a mixed gas of H2 gas and SiH4 gas, was introduced from the cathode placed in the film forming chamber to face a surface of the composite substrate, and by adjusting a film forming time, each of semiconductor films in Experimental Examples 1 to 8 formed of a microcrystalline silicon film was formed on a surface of the zinc oxide layer of the composite substrate by a plasma CVD method such that the semiconductor film had an in-plane average film thickness of 2500 nm.
Each of the semiconductor films in Experimental Examples 1 to 8 was formed by changing the gas flow ratio (H2 flow rate/SiH4 flow rate) of the H2 gas and the SiH4 gas introduced from the shower plate hole near the center of the cathode and the shower plate hole near the periphery of the cathode in the film forming chamber of the vacuum film forming device.
Crystallization ratio Ic/Ia of each of the semiconductor films in Experimental Examples 1 to 8 fabricated as described above was measured at the center of the semiconductor film, at a point 100 mm away from the center of the semiconductor film, at a point 300 mm away from the center of the semiconductor film, at a point 500 mm away from the center of the semiconductor film, at a point 550 mm away from the center of the semiconductor film, at a point 600 mm away from the center of the semiconductor film, at a point 650 mm away from the center of the semiconductor film, and at a point 700 mm away from the center of the semiconductor film (at the points other than the center of the semiconductor film, crystallization ratio Ic/Ia was obtained by measuring crystallization ratios at a plurality of points having the distance from the center of the semiconductor film, and calculating an average value thereof). The result is shown in
As shown in
As shown in
As shown in
Next, like Experimental Examples 1, 6 and 8 in
2 to 9 of crystallization ratio Xa in the horizontal axis in
A . . . The semiconductor film does not peel off at 99% or more of all measurement points.
B . . . The semiconductor film does not peel off at 98% or more of all measurement points.
C . . . The semiconductor film does not peel off at 95% or more of all measurement points.
D . . . The semiconductor film does not peel off at 92% or more of all measurement points.
E . . . The semiconductor film does not peel off at 90% or more of all measurement points.
As shown in
Xb≧Xa (i′)
Xb≧Xa+1 (i)
Xb≧Xa+2 (ii)
Xb≧Xa+3 (ii′)
In addition, as shown in
Xb≧13−Xa (iii)
Xa≧Xb (iv)
It should be understood that the embodiments and examples disclosed herein are illustrative and not limitative in any respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
The present invention can be used in the semiconductor film and the photoelectric conversion device.
1 substrate; 1a peripheral surface; 1b cut surface; 2 semiconductor film; 2a peripheral region; 2b central region; 2c intermediate region; 9 transparent conductive film; 10 reflection electrode; 11 first pin-type photoelectric conversion layer; 13 first p-type semiconductor layer; 14 first i-type semiconductor layer; 15 first n-type semiconductor layer; 21, 22, 23 solid line; 31 cathode; 32 anode; 33 gas introduction pipe; 34, 38 arrow; 35 impedance matching circuit; 36 high-frequency power supply; 37 gas discharge pipe; 39 gate valve; 40 pump; 41 film forming chamber; 51 translucent substrate; 52 transparent conductive film; 53 p-type microcrystalline silicon layer; 54 i-type microcrystalline silicon layer; 55 n-type microcrystalline silicon layer; 101 transparent insulating substrate; 102 first transparent electrode; 103 p-type microcrystalline Si layer (p layer); 104 i-type microcrystalline Si layer (i layer); 105 n-type microcrystalline Si layer (n layer); 106 second transparent electrode; 107 backside electrode; 108 microcrystalline Si photoelectric conversion layer
Number | Date | Country | Kind |
---|---|---|---|
2009 299094 | Dec 2009 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/JP2010/073747 | 12/28/2010 | WO | 00 | 6/29/2012 |