Claims
- 1. A semiconductor memory comprising:
- a pair of data lines which are formed substantially in parallel to each other;
- a plurality of word lines, each of which is arranged so as to intersect with both of said pair of data lines;
- a plurality of dynamic memory cells, each of which is coupled to one of said word lines and to one of said data lines;
- an amplifier having a pair of N-channel MOS transistors and a pair of P-channel MOS transistors, wherein each transistor of said pair of N-channel MOS transistors has a gate cross-coupled to a drain of the other transistor of said pair of N-channel MOS transistors, wherein a drain of one of said pair of N-channel MOS transistors is coupled to one of said pair of data lines and the drain of the other of said pair of N-channel MOS transistors is coupled to the other of said pair of data lines, wherein each transistor of said pair of P-channel MOS transistors has a gate cross-coupled to a drain of the other transistor of said pair of P-channel MOS transistors, and wherein a drain of one of said pair of P-channel MOS transistors is coupled to one of said pair of data lines and the drain of the other of said pair of P-channel MOS transistors is coupled to the other of said pair of data lines, wherein said amplifier provides said data lines with a high-level potential and a low-level potential, respectively; and
- a first switching MOS transistor having a source-drain path provided between said pair of data lines,
- a second switching MOS transistor having a source-drain path provided between one of said pair of data lines and a terminal being supplied with an intermediate level between said high-level potential and said low-level potential; and
- a third switching MOS transistor having a source-drain path provided between the other of said pair of data lines and said terminal,
- wherein said first, second and third switching MOS transistors are turned "on" so that said pair of data lines are set at said intermediate level.
- 2. A semiconductor memory according to claim 1, further comprising:
- a fourth switching MOS transistor having a drain coupled to a source of each of said pair of N-channel MOS transistors and a source coupled to a first potential terminal; and
- a fifth switching MOS transistor having a drain coupled to a source of each of said pair of P-channel MOS transistors and a source coupled to a second potential terminal.
- 3. A semiconductor memory according to claim 2,
- wherein operation of said pair of N-channel MOS transistors is started at a time different from the time when operation of said pair of P-channel MOS transistors is started.
Priority Claims (1)
Number |
Date |
Country |
Kind |
56-70733 |
May 1981 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/448,138 filed May 23, 1995 which is a continuation of application Ser. No. 306,612 filed Sep. 15, 1994 now U.S. Pat. No. 5,448,520 which is a continuation of application Ser. No. 193,896, filed Feb. 9, 1994 now U.S. Pat. No. 5,365,478 which is a continuation of application Ser. No. 115,241, filed Aug. 18, 1993 which is a continuation of application Ser. No. 985,644, filed Dec. 7, 1992 which is a continuation of application Ser. No. 864,934, filed Apr. 7, 1992 now U.S. Pat. No. 5,170,374 which is a continuation of application Ser. No. 07/515,345 filed Apr. 30, 1990 now U.S. Pat. No. 5,119,332 which is a continuation of application Ser. No. 07/397,119 filed Aug. 22, 1989 which is a continuation of application Ser. No. 07/230,046 filed Aug. 9, 1988 now U.S. Pat. No. 4,860,255 which is a continuation of application Ser. No. 07/120,539 filed Nov. 13, 1987, now abandoned, which is a division of application Ser. No. 06/941,840 filed Dec. 15, 1986, now U.S. Pat. No. 4,709,353, which is a division of application Ser. No. 06/854,502 filed Apr. 22, 1986, now U.S. Pat. No. 4,646,267, which is a division of application Ser. No. 06/756,707 filed Jul. 19, 1985, now U.S. Pat. No. 4,592,022, which is a division of application Ser. No. 06/638,982 filed Aug. 8, 1984, now U.S. Pat. No. 4,539,658, which is a division of application Ser. No. 06/377,958 filed May 13, 1982, now U.S. Pat. No. 4,472,792.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5383158 |
Ikegami |
Jan 1995 |
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5448520 |
Shimohigashi |
Sep 1995 |
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Divisions (5)
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Number |
Date |
Country |
Parent |
941840 |
Dec 1986 |
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Parent |
854502 |
Apr 1986 |
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Parent |
756707 |
Jul 1985 |
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Parent |
638982 |
Aug 1984 |
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Parent |
377958 |
May 1982 |
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Continuations (10)
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Number |
Date |
Country |
Parent |
448138 |
May 1995 |
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Parent |
306612 |
Sep 1994 |
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Parent |
193896 |
Feb 1994 |
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Parent |
115241 |
Aug 1993 |
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Parent |
985644 |
Dec 1992 |
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Parent |
864934 |
Apr 1992 |
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Parent |
515345 |
Apr 1990 |
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Parent |
397119 |
Aug 1989 |
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Parent |
230046 |
Aug 1988 |
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Parent |
120539 |
Nov 1987 |
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