Claims
- 1. A semiconductor optical device comprising:
- a photo-electric conversion unit comprising a plurality of photo-electric conversion elements arranged therein defining a photo-electric conversion area;
- plural external leads;
- electrical connection means for electrically connecting said photo-electric conversion unit to said plural external leads; and
- a sealing member comprising transparent resin for entirely sealing said photo-electric conversion unit and said electrical connection means,
- wherein a distance D between a substantially planar outer surface of said sealing member for receiving light incident on said photo-electric conversion unit and the photo-electric conversion area of said photo-electric conversion elements satisfies a relation, D.gtoreq.(1/2).multidot.l/tan .theta., wherein .gamma. is a critical angle of total reflection of said sealing member with respect to air, and l is the maximum length of the photo-electric conversion area.
- 2. A semiconductor photo-sensor according to claim 1 wherein said sealing member further comprises a light transmitting member of different material than said resin.
- 3. A semiconductor photo-sensor according to claim 2, wherein said light transmitting member is bonded to said sealing member by a bonding layer.
- 4. A semiconductor photo-sensor according to claim 2, wherein said light transmitting member is made of glass.
- 5. A semiconductor photo-sensor according to claim 1 wherein said photo-electric conversion elements are a focusing sensor.
- 6. A semiconductor photo-sensor according to claim 3, wherein said light transmitting member is made of glass.
- 7. A semiconductor optical device comprising:
- a photo-electric conversion unit comprising a plurality of photo-electric conversion elements arranged therein defining a photo-electric conversion area;
- a plural external leads;
- electrical connection means for electrically connecting said photo-electric conversion unit to said plural external leads;
- a sealing member comprising transparent resin for entirely sealing said photo-electric conversion unit and said electrical connection means; and
- a transparent member comprising a material different from that of said transparent resin provided on said sealing member for receiving light incident on said photo-electric conversion unit,
- wherein a distance D between a substantially planar outer surface of said transparent member and the photo-electric conversion area satisfies a relation, D.gtoreq.(1/2).multidot.l/tan .theta. and the distance d.sub.1 between an outersurface from which a light is indicant into said transparent resin and said photoelectric conversion area is less than (1/2).multidot.l/tan .theta., wherein .theta. is a critical angle of total reflection of said transparent and of said transparent member with respect to air, and l is the maximum length of said photo-electric conversion area.
- 8. A semiconductor photo-sensor according to claim 6, wherein said transparent member is bonded to said light sealing member by a bonding layer.
- 9. A semiconductor photo-sensor according to claim 6, wherein said transparent member is made of glass.
- 10. A semiconductor photo-sensor according to claim 6, wherein said photo-electric conversion element is a focusing sensor.
- 11. A semiconductor photo-sensor according to claim 3, wherein said light transmitting member is made of glass.
- 12. A semiconductor photo-sensor comprising an array (1) of photo-sensing cells encapsulated in a light transmissive resin (4);
- said array (1) being located at a depth D from a bounding surface of said photo-sensor on a light incident side of said array (1),
- characterized in that the depth D is more than l.sub.2 /4 tan .theta..sub.1', so that the light reflected from the photosensing cell and further reflected from a bounding surface of the transmissive resin falls predominantly outside of the periphery of the photo-sensing array; wherein l.sub.2 is a maximum dimension of a length of said array (1) and the angle .theta..sub.1 is the critical angle of total internal reflection for light internally reflected from said bounding surface of the transmissive resin.
Priority Claims (2)
Number |
Date |
Country |
Kind |
8-166896 |
Jul 1986 |
JPX |
|
9-6899 |
Jan 1987 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 08/415,581, filed Apr 3, 1995, now abandoned, which is a continuation of application Ser. No. 08/253,204, filed Jun. 2, 1994, now abandoned, which is a continuation of application Ser. No. 07/965,569, filed Oct. 23, 1992, now abandoned, which is a continuation of application Ser. No. 07/825,768, filed Jan. 21, 1992, now abandoned, which is a continuation of application Ser. No. 07/646,459, filed Jan. 25, 1991, now abandoned, which is a continuation of application Ser. No. 07/396,825, filed Aug. 21, 1989, now abandoned, which is a continuation of application Ser. No. 07/072,737, filed Jul. 13, 1987, now abandoned.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
3622419 |
London et al. |
Nov 1971 |
|
Foreign Referenced Citations (6)
Number |
Date |
Country |
0110518 |
Jun 1984 |
EPX |
0186044 |
Jul 1986 |
EPX |
58-192366 |
Nov 1983 |
JPX |
59-95504 |
Jan 1984 |
JPX |
59-148372 |
Aug 1984 |
JPX |
60-18941 |
Jan 1985 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Patent Abstracts of Japan, vol. 6, No. 61 (M-123) (939) Apr. 20, 1982 & JP-A-57 002 773 (Nippon Denshin Denwa Kosha) Jan. 8, 1982. |
Continuations (7)
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Number |
Date |
Country |
Parent |
415581 |
Apr 1995 |
|
Parent |
253204 |
Jun 1994 |
|
Parent |
965569 |
Oct 1992 |
|
Parent |
825768 |
Jan 1992 |
|
Parent |
646459 |
Jan 1991 |
|
Parent |
396825 |
Aug 1989 |
|
Parent |
072737 |
Jul 1987 |
|