Claims
- 1-13. canceled
- 14. A process for removing residue from a substrate comprising:
applying a coating composition onto said substrate to form a coated substrate with an edge bead formed thereon; contacting said edge bead formed on said coated substrate with an edge bead remover composition comprising: at least one ketone selected from the group consisting of: 6wherein R1 and R2 are independently selected from the group consisting of: methyl, ethyl, n-propyl, n-butyl, sec-butyl, and isobutyl, and wherein n equals 1 or 2; at least one ester other than lactones; and at least one lactone, thereby dissolving said edge bead; and removing said dissolved edge bead from said coated substrate.
- 15. The process of claim 14, further comprising, after contacting said coated substrate with said edge bead remover composition, dissolving any unwanted coating composition from a bottom side of said coated substrate.
- 16. The process of claim 14, wherein said coating composition is selected from the group consisting of: stress buffer coating and positive photoresist coating.
- 17. The process of claim 14, wherein said coating composition is stress buffer coating.
- 18. The process of claim 17, wherein said stress buffer coating composition is selected from the group consisting of: polyimide polymer, polyimide precursor polymer, and any combinations thereof.
- 19. The process of claim 17, wherein said stress buffer coating composition is selected from the group consisting of: polyamide ester polymers with radiation sensitive moieties in the ester group and polyamide ester polymers without radiation sensitive moieties in the ester group.
- 20. The process of claim 17, wherein said stress buffer coating composition is selected from the group consisting of: polybenzoxazole polymer, polybenzoxazole precursor polymer, and any combinations thereof.
- 21. The process of claim 14, wherein said coating composition is applied to said substrate with a semiconductor wafer spin coating machine.
- 22. The process of claim 14, wherein said substrate comprises material selected from the group consisting of: silicon, aluminum, copper, chromium, nickel, gold, tantalum, titanium, tungsten, ferrous metals, aluminum/copper alloys, polymeric resins, silicon dioxide, doped silicon dioxide, silicone resins, silicon carbide, silicon nitride, titanium nitride, tantalum nitride, silicon arsenide, gallium arsenide, indium phosphide, indium selenide, indium-tin oxide, tantalum, polysilicon, inorganic glasses, ceramic, and any combinations thereof.
- 23. The process of claim 22, wherein said substrate is a silicon wafer.
- 24. A process for removing an edge bead from a substrate comprising:
contacting said edge bead coating with a composition comprising: at least one ketone selected from the group consisting of: 7wherein R1 and R2 are independently selected from the group consisting of: methyl, ethyl, n-propyl, n-butyl, sec-butyl, and isobutyl, and wherein n equals 1 or 2; at least one ester other than lactones; and at least one lactone, thereby dissolving said edge bead; and removing said dissolved edge bead from said substrate.
- 25. The process of claim 24, wherein said substrate is coated with a stress buffer coating.
- 26. The process of claim 24, wherein said substrate is coated with a positive photoresist coating.
- 27. The composition of claim 24, wherein said at least one ketone comprises 4 to 6 carbon atoms.
- 28. The composition of claim 24, wherein said at least one ketone comprises 5 or 6 carbon atoms and wherein R1 and R2 are independently selected from the group consisting of: methyl, ethyl, n-propyl, n-butyl, and isobutyl groups.
- 29. The composition of claim 24, wherein said at least one ketone is 2-pentanone.
- 30. The composition of claim 24, wherein said at least one ester is ethyl lactate.
- 31. The composition of claim 24, wherein said at least one lactone is selected from the group consisting of: gamma-butyrolactone, gamma-valerolactone, gamma-caprolactone, delta-valerolactone, and any combinations thereof.
- 32. The composition of claim 31, wherein said lactone is gamma-butyrolactone.
- 33. The composition of claim 24, wherein said at least one ketone is present in an amount between about 25 wt. % to about 55 wt. %; said at least one ester is present in an amount between about 20 wt. % to about 55 wt. %; and said at least one lactone is present in an amount between about 10 wt. % to about 35 wt. %.
- 34. The composition of claim 33, wherein said at least one ketone is present in an amount between about 30 wt. % to about 50 wt. %; said at least one ester is present in an amount between about 30 wt. % to about 50 wt. %; and said at least one lactone is present in an amount between about 15 wt. % to about 35 wt. %.
- 35. The composition of claim 33, wherein said at least one ketone is present in an amount between about 35 wt. % to about 50 wt. %; said at least one ester is present in an amount between about 35 wt. % to about 50 wt. %; and said at least one lactone is present in an amount between about 20 wt. % to about 30 wt. %.
- 36. The composition of claim 24, wherein said at least one ketone is between about 25 wt. % to about 55 wt. % 2-pentanone; said at least one ester is between about 20 wt. % to about 55 wt. % ethyl lactate; and said at least one lactone is between about 10 wt. % to about 35 wt. % gamma-butyrolactone.
- 37. The composition of claim 24, wherein said at least one ketone is between about 30 wt. % to about 50 wt. % 2-pentanone; said at least one ester is between about 30 wt. % to about 50 wt. % ethyl lactate; and at least one lactone is about 15 wt. % to about 35 wt. % gamma-butyrolactone.
- 38. The composition of claim 24, wherein said at least one ketone is between about 35 wt. % to about 50 wt. % 2-pentanone; said at least one ester is between about 35 wt. % to about 50 wt. % ethyl lactate; and said at least one lactone is between about 20 wt. % to about 30 wt. % gamnia-butyrolactone.
- 39. The process of claim 24, further comprising, after contacting said edge bead with said composition, dissolving a coating composition from a bottom side of said substrate.
RELATED APPLICATION
[0001] This application claims priority from Provisional Patent Application Serial No. 60/355,617, filed on Feb. 6, 2002.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60355617 |
Feb 2002 |
US |
Divisions (1)
|
Number |
Date |
Country |
Parent |
10359327 |
Feb 2003 |
US |
Child |
10865054 |
Jun 2004 |
US |