Claims
- 1. A method of testing a semiconductor device including a memory circuit having a plurality of memory cells, and a built-in self test circuit, said method comprising:the first step of applying an external power supply voltage to said semiconductor device; the second step of applying a first external command signal to said semiconductor device to have a built-in self test circuit test said memory circuit, said built-in self test circuit performing a test to determine whether each of the memory cells in the memory circuit is normal or not; and the third step of applying a second external command signal to said semiconductor device to have said built-in self test circuit externally output data representing a result of the test and receiving the data.
- 2. The method of testing a semiconductor device according to claim 1, wherein said semiconductor device further includes a logic circuit;said method further comprising in said second step, having said built-in self test circuit test at least part of said logic circuit.
- 3. The method of testing a semiconductor device according to claim 2, further comprising the fourth step of externally testing that portion of said logic circuit which is not tested by said built-in self test circuit.
- 4. The method of testing a semiconductor device according to claims 1, whereinin said first step, a clock signal for attaining synchronization between said semiconductor device and outside is applied to said built-in self test circuit.
- 5. The method of testing a semiconductor device according to claim 1, whereinin said third step, said built-in self test circuit outputs said data n bits by n bits (where n is an integer not smaller than 1); and the data output n bits by n bits from said built-in self test circuit are subjected to serial/parallel conversion to generate parallel data of predetermined n×m bits (where m is an integer not smaller than 2), and the generated parallel data are stored in a memory device provided in advance.
- 6. The method of testing a semiconductor device according to claim 5, whereina plurality of semiconductor devices are tested simultaneously; said serial/parallel conversion in said third step is performed for respective semiconductor devices; and in said third step, the plurality of parallel data generated by a plurality of said serial/parallel conversions are each successively written to said memory device.
- 7. The method of testing a semiconductor device according to claim 1, wherein said data representing the result of the test is output by said self test circuit in synchronization with a synchronizing signal supplied to said semiconductor device from an external tester.
- 8. The method of testing a semiconductor device according to claim 1, wherein said data representing the result of the test is output by said self test circuit serially.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-168450 |
Jun 1998 |
JP |
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Parent Case Info
This application is a continuation of application Ser. No. 09/196,438 filed Nov. 20, 1998 now U.S. Pat No. 6,311,300.
US Referenced Citations (10)
Foreign Referenced Citations (5)
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198 23 583 |
Dec 1998 |
DE |
0 805 459 |
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GB |
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Continuations (1)
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Number |
Date |
Country |
Parent |
09/196438 |
Nov 1998 |
US |
Child |
09/860608 |
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US |