Claims
- 1. An apparatus, comprising:a fully crystalline semiconductor material having a surface, a region of the surface having first dopant material of a first dopant type deposited onto the surface and driven into the semiconductor to form a doped crystalline semiconductor layer having the first dopant type; wherein the semiconductor material below the doped crystalline semiconductor layer is doped with a dopant of a second dopant type, and wherein the first and second dopant types form a junction, and wherein the junction depth is less than 20 nm and the sheet resistivity of the doped crystalline semiconductor layer is less than 500 ohms/square, and wherein the region shows evidence of high energy ion implantation to produce vacancies near the surface and interstitial semiconductor atoms at a depth below the surface much greater than the junction depth.
- 2. An apparatus, comprising:a fully crystalline semiconductor material having a surface, a region of the surface having first dopant material of a first dopant type deposited onto the surface and driven into the semiconductor to form a doped crystalline semiconductor layer having the first dopant type; wherein the semiconductor material below the doped crystalline semiconductor layer is doped with a dopant of a second dopant type, and wherein the first and second dopant types form a junction, and wherein the junction depth is less than 20 nm and the sheet resistivity of the doped crystalline semiconductor layer is less than 500 ohms/square, and wherein the junction has a roughness of less than 2 nm.
- 3. The apparatus of claim 2, wherein the junction has a roughness of less than 1 nm.
CROSS REFERENCE TO RELATED APPLICATIONS
This application claims priority pursuant to 35 U.S.C. 119(e) to the following U.S. Provisional Applications: Application No. 60/323,862 filed Sep. 21, 2001 and Application No. 60/323,863 filed Sep. 21, 2001, all of the above applications being incorporated herein by reference in their entirety including incorporated material.
US Referenced Citations (12)
Non-Patent Literature Citations (4)
Entry |
Agarwal et al. Appl. Phys. Let. 74, 2331-3, (1999). |
Venezia et al. Appl. Phys. Lett. 74, 1299, (1999). |
Kang et al. , Appl. Phys. Lett. 80, 1361, (2002). |
Mathiot, Daniel, Appl. Phys. Lett. 58, 132 (1991). |
Provisional Applications (2)
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Number |
Date |
Country |
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60/323862 |
Sep 2001 |
US |
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60/323863 |
Sep 2001 |
US |