the imperfections being on the surface

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/34the imperfections being on the surface

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Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor substrate, laminated structure, and method fo...
- Patent number 12,091,774
- Issue date Sep 17, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multi-layered polysilicon and oxygen-doped polysilicon design for R...
- Patent number 12,074,036
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten deposition on a cobalt surface
- Patent number 12,065,731
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Cheng Hung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 12,014,924
- Issue date Jun 18, 2024
- Sumitomo Electric Industries, Ltd.
- Kenji Kanbara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium nano...
- Patent number 11,978,784
- Issue date May 7, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of evaluating silicon wafer, method of evaluating silicon wa...
- Patent number 11,948,819
- Issue date Apr 2, 2024
- Sumco Corporation
- Keiichiro Mori
- B24 - GRINDING POLISHING
Information Patent Grant
Silicon carbide substrate and method of manufacturing silicon carbi...
- Patent number 11,913,135
- Issue date Feb 27, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon on insulator (SOI) device and forming method thereof
- Patent number 11,888,025
- Issue date Jan 30, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for setting a nitrogen concentration of a silicon epitaxial...
- Patent number 11,888,036
- Issue date Jan 30, 2024
- Sumco Corporation
- Kazuya Kodani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for manufacturing same
- Patent number 11,705,329
- Issue date Jul 18, 2023
- Showa Denko K.K.
- Koji Kamei
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a semiconductor wafer composed of monocrystall...
- Patent number 11,639,558
- Issue date May 2, 2023
- Siltronic AG
- Timo Mueller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer with low defect count and method for manufactur...
- Patent number 11,610,808
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,611,017
- Issue date Mar 21, 2023
- NGK Insulators, Ltd.
- Takayuki Hirao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Guard ring structure for an integrated circuit
- Patent number 11,545,449
- Issue date Jan 3, 2023
- Intel Corporation
- Paul A. Nyhus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium nano...
- Patent number 11,532,734
- Issue date Dec 20, 2022
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 11,530,491
- Issue date Dec 20, 2022
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Chamfered silicon carbide substrate and method of chamfering
- Patent number 11,515,140
- Issue date Nov 29, 2022
- SICRYSTAL GMBH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oscillator
- Patent number 11,496,095
- Issue date Nov 8, 2022
- Canon Kabushiki Kaisha
- Toshifumi Yoshioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure, inspection method...
- Patent number 11,473,907
- Issue date Oct 18, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of lapping semiconductor wafer and semiconductor wafer
- Patent number 11,456,168
- Issue date Sep 27, 2022
- Sumco Corporation
- Daisuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V compound semiconductor substrate and group III-V compou...
- Patent number 11,444,161
- Issue date Sep 13, 2022
- Sumitomo Electric Industries, Ltd.
- Shinya Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a replacement gate structure for a transistor de...
- Patent number 11,437,490
- Issue date Sep 6, 2022
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip gettering
- Patent number 11,393,697
- Issue date Jul 19, 2022
- Advanced Micro Devices, Inc.
- Rahul Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium phosphide (InP) wafer having pits of olive-shape on the back...
- Patent number 11,376,703
- Issue date Jul 5, 2022
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Liugang Wang
- B24 - GRINDING POLISHING
Information Patent Grant
Single crystal diamond and semiconductor element using same
- Patent number 11,355,591
- Issue date Jun 7, 2022
- National Institute of Advanced Industrial Science and Technology
- Shinya Ohmagari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing reformed sic wafer, epitaxial layer-attach...
- Patent number 11,261,539
- Issue date Mar 1, 2022
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device capable of suppressing leakage current
- Patent number 11,239,317
- Issue date Feb 1, 2022
- Kioxia Corporation
- Shoichi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductive device with mesa structure and method of fabricating...
- Patent number 11,177,377
- Issue date Nov 16, 2021
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered polysilicon and oxygen-doped polysilicon design for R...
- Patent number 11,171,015
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal orientation engineering to achieve consistent nanowire shapes
- Patent number 11,139,402
- Issue date Oct 5, 2021
- Synopsys, Inc.
- Victor Moroz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20240363696
- Publication date Oct 31, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki NISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNGSTEN DEPOSITION ON A COBALT SURFACE
- Publication number 20240360548
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Cheng HUNG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...
- Publication number 20240332364
- Publication date Oct 3, 2024
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR SUBSTRA...
- Publication number 20240312779
- Publication date Sep 19, 2024
- FILNEX INC.
- Mitsuhiko OGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF TH...
- Publication number 20240290616
- Publication date Aug 29, 2024
- DENSO CORPORATION
- Tomohiro MIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE
- Publication number 20240250129
- Publication date Jul 25, 2024
- Mitsuboshi Diamond Industrial Co., Ltd.
- Mitsuru KITAICHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER AND METHOD FOR PROCESSING A SEMICONDUCTOR WAFER
- Publication number 20240194743
- Publication date Jun 13, 2024
- ROBERT BOSCH GmbH
- Bernhard Polzinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SUBSTRATE SiC COMPOSITE SUBSTRATE
- Publication number 20240186380
- Publication date Jun 6, 2024
- NGK Insulators, Ltd.
- Yuki URATA
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED S...
- Publication number 20240145537
- Publication date May 2, 2024
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20240145229
- Publication date May 2, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON ON INSULATOR DEVICE
- Publication number 20240128317
- Publication date Apr 18, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20230357957
- Publication date Nov 9, 2023
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230352298
- Publication date Nov 2, 2023
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20230268177
- Publication date Aug 24, 2023
- SHOWA DENKO K.K.
- Koji KAMEI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20230215925
- Publication date Jul 6, 2023
- GLOBALWAFERS CO., LTD.
- Po Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
- Publication number 20230078982
- Publication date Mar 16, 2023
- SiCrystal GmbH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM NANO...
- Publication number 20230071989
- Publication date Mar 9, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III NITRIDE SEMICONDUCTOR WAFERS
- Publication number 20230031662
- Publication date Feb 2, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Kye Jin LEE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE WAFER AND SEMICONDUCTOR DEVICE
- Publication number 20220403551
- Publication date Dec 22, 2022
- SENIC Inc.
- Jung Woo CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALL...
- Publication number 20220349089
- Publication date Nov 3, 2022
- Siltronic AG
- Timo Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
TUNGSTEN DEPOSITION ON A COBALT SURFACE
- Publication number 20220228257
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Chi-Cheng HUNG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES
- Publication number 20220223429
- Publication date Jul 14, 2022
- The Regents of the University of California
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC EPITAXIAL WAFER, MANUFACTURING APPARATUS OF A SIC EPITAXIAL WAF...
- Publication number 20220157945
- Publication date May 19, 2022
- ROHM CO., LTD.
- Kentaro TAMURA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON ON INSULATOR (SOI) DEVICE AND FORMING METHOD THEREOF
- Publication number 20220130956
- Publication date Apr 28, 2022
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED POLYSILICON AND OXYGEN-DOPED POLYSILICON DESIGN FOR R...
- Publication number 20220059364
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM OXIDE SUBSTRATE AND METHOD OF MANUFACTURING GALLIUM OXIDE S...
- Publication number 20220028700
- Publication date Jan 27, 2022
- AGC Inc.
- Yusuke HIRABAYASHI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Surface Profile Mapping for Evaluating III-N Device Performance and...
- Publication number 20210389126
- Publication date Dec 16, 2021
- The Government of the United States of America, as represented by the Secreta...
- James C. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM PHOSPHIDE (INP) WAFER HAVING PITS OF OLIVE-SHAPE ON THE BACK...
- Publication number 20210370459
- Publication date Dec 2, 2021
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Liugang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A REPLACEMENT GATE STRUCTURE FOR A TRANSISTOR DE...
- Publication number 20210320189
- Publication date Oct 14, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20210320005
- Publication date Oct 14, 2021
- Kenji KANBARA
- H01 - BASIC ELECTRIC ELEMENTS

the imperfections being on the surface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nitride semiconductor substrate, laminated structure, and method fo...

Multi-layered polysilicon and oxygen-doped polysilicon design for R...

Tungsten deposition on a cobalt surface

Silicon carbide epitaxial substrate and method for manufacturing si...

Gate-all-around integrated circuit structures having germanium nano...

Method of evaluating silicon wafer, method of evaluating silicon wa...

Silicon carbide substrate and method of manufacturing silicon carbi...

Silicon on insulator (SOI) device and forming method thereof

Method for setting a nitrogen concentration of a silicon epitaxial...

SiC epitaxial wafer and method for manufacturing same

Method for producing a semiconductor wafer composed of monocrystall...

Semiconductor wafer with low defect count and method for manufactur...

Group 13 element nitride layer, free-standing substrate and functio...

Guard ring structure for an integrated circuit

Gate-all-around integrated circuit structures having germanium nano...

Silicon carbide epitaxial substrate and method for manufacturing si...

Chamfered silicon carbide substrate and method of chamfering

Oscillator

Method for manufacturing semiconductor structure, inspection method...

Method of lapping semiconductor wafer and semiconductor wafer

Group III-V compound semiconductor substrate and group III-V compou...

Methods of forming a replacement gate structure for a transistor de...

Semiconductor chip gettering

Indium phosphide (InP) wafer having pits of olive-shape on the back...

Single crystal diamond and semiconductor element using same

Method for manufacturing reformed sic wafer, epitaxial layer-attach...

Semiconductor memory device capable of suppressing leakage current

Semiconductive device with mesa structure and method of fabricating...

Multi-layered polysilicon and oxygen-doped polysilicon design for R...

Crystal orientation engineering to achieve consistent nanowire shapes

Patents Applicationslast 30 patents

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

TUNGSTEN DEPOSITION ON A COBALT SURFACE

SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR SUBSTRA...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF TH...

SiC SEMICONDUCTOR DEVICE

SEMICONDUCTOR WAFER AND METHOD FOR PROCESSING A SEMICONDUCTOR WAFER

SiC SUBSTRATE SiC COMPOSITE SUBSTRATE

SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED S...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

SILICON ON INSULATOR DEVICE

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR STRUCTURE

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM NANO...

III NITRIDE SEMICONDUCTOR WAFERS

SILICON CARBIDE WAFER AND SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALL...

TUNGSTEN DEPOSITION ON A COBALT SURFACE

N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES

SIC EPITAXIAL WAFER, MANUFACTURING APPARATUS OF A SIC EPITAXIAL WAF...

SILICON ON INSULATOR (SOI) DEVICE AND FORMING METHOD THEREOF

MULTI-LAYERED POLYSILICON AND OXYGEN-DOPED POLYSILICON DESIGN FOR R...

GALLIUM OXIDE SUBSTRATE AND METHOD OF MANUFACTURING GALLIUM OXIDE S...

Surface Profile Mapping for Evaluating III-N Device Performance and...

INDIUM PHOSPHIDE (INP) WAFER HAVING PITS OF OLIVE-SHAPE ON THE BACK...

METHODS OF FORMING A REPLACEMENT GATE STRUCTURE FOR A TRANSISTOR DE...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...