Patent Application
20220406643
Embodiments of the present disclosure generally relate to a substrate processing equipment, and more specifically, to microwave degas chambers.
In the processing of semiconductor substrates, or wafers, in the formation of integrated circuit structures thereon, substrates are often degassed between processes to remove adsorbed gases, moisture, etc. from the substrate prior to, for example, performing deposition or other processes on the substrate. If the absorbed gaseous impurities are not removed prior to subsequent processing, they may undesirably outgas during the process, leading to contamination, quality reduction, or the like. Conventional degas chambers use a heating element such as a hot plate or resistive heater. Microwave heat sources may be used to degas the substrates more quickly. However, conventional substrate supports may not provide adequate temperature uniformity when used with a microwave heat source.
Accordingly, the inventors have provided improved substrate supports for use in microwave degas chambers.
Embodiments of substrate supports for use in microwave degas chambers are provided herein. In some embodiments, a substrate support for use in a microwave degas chamber includes a support plate having one or more support features for supporting a substrate; a susceptor comprising a plate disposed on the support plate, wherein the susceptor includes one or more openings, wherein the one or more support features extend through corresponding ones of the one or more openings; and a metal foil disposed beneath a side of the susceptor facing the support plate.
In some embodiments, a substrate support for use in a microwave degas chamber includes: a support plate having one or more support features that are fixed to the support plate for supporting a substrate; a susceptor comprising a flat plate that is circular and disposed on the support plate, wherein the susceptor includes one or more openings corresponding with the one or more support features, and wherein the susceptor is made of a material having a thermal conductivity of about 190 watts per meter kelvin (W/mK) or greater; and a metal foil coupled to the susceptor on a side of the susceptor facing the support plate or a side of the support plate opposite the susceptor.
In some embodiments, a microwave degas chamber for processing a substrate includes: a chamber body having an interior volume; a support plate made of a first material disposed in the interior volume and having one or more support features for supporting the substrate; a susceptor comprising a plate made of a second material disposed on the support plate, wherein the susceptor includes one or more openings corresponding with the one or more support features; a microwave source coupled to the chamber body and configured to supply microwave radiation to heat the substrate; and a metal foil disposed between the susceptor and the microwave source.
Other and further embodiments of the present disclosure are described below.
Embodiments of the present disclosure, briefly summarized above and discussed in greater detail below, can be understood by reference to the illustrative embodiments of the disclosure depicted in the appended drawings. However, the appended drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of scope, for the disclosure may admit to other equally effective embodiments.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
Embodiments of substrate supports for use in a microwave degas chamber are provided herein. The substrate support generally includes a susceptor disposed on a support plate. The susceptor heats up by absorbing microwave radiation provided to the susceptor to heat a substrate disposed on or above the susceptor. A more uniform temperature profile across the susceptor provides more uniform heating to the substrate. In some embodiments, the susceptors disclosed herein are advantageously made of a material having a high thermal conductivity, for example, at least 200 W/mK to increase temperature uniformity of the susceptor. Metal is good at reflecting microwave radiation and therefore, in some embodiments, a metal plate or foil is disposed between the susceptor and a microwave source to advantageously disperse microwave radiation across the susceptor to increase temperature uniformity.
A slit valve 108 is coupled to the chamber body 102 for transferring one or more substrates into or out of the chamber body 102 while also providing a selective seal. In some embodiments, the slit valve 108 can facilitate the transferring of one or more substrates between the chamber body 102 and a factory interface of a multi-chamber processing tool.
A microwave source 120 is coupled to the chamber body 102 and configured to supply microwave radiation to heat the substrate 118. For example, the microwave source 120 is configured to provide volumetric heating to the interior volume 112 to degas the substrate 118. In some embodiments, the microwave source provides microwaves to the chamber body 102 at a frequency range of about 5 to about 7 gigahertz.
The chamber body 102 includes a pump inlet 134, or exhaust port for exhausting degassed material from the interior volume 112. The pump inlet 134 is fluidly coupled to a pump 110. The pump 110 can be any pump suitable for evacuating degassed material from the interior volume 112. In some embodiments, a pump adapter 142 is disposed between the pump inlet 134 and the pump 110 to facilitate the coupling of various different pumps to the pump inlet 134. In some embodiments, the pump inlet 134 is disposed on a sidewall of the chamber body 102. However, in other embodiments, the pump inlet 134 may be disposed along a floor, or bottom, of the chamber body 102.
a pump coupled to the chamber body via a pump inlet and a mesh coupled to the chamber body at the pump inlet.
In some embodiments, a mesh 132 is coupled to the chamber body 102 at the pump inlet 134. The mesh 132 includes a plurality of openings 144 overlaying the pump inlet 134. The plurality of openings 144 are configured to reduce or eliminate microwave leakage through the pump inlet 134. The plurality of openings 144 may have a circular shape, a regular polygon shape, or any other suitable shape. In some embodiments, the plurality of openings 144 are sized to be less than one fourth of the given wavelength of the microwave source 120.
The substrate support 124 generally includes a support plate 106 and a susceptor 104 disposed on the support plate 106. The support plate 106 has one or More support features 122 fixed to the support plate 106 for supporting the substrate 118. In some embodiments, the one or more support features 122 include a plurality of pins that extend up from an upper surface 126 of the support plate 106 and through one or more openings 128 in the susceptor 104. In some embodiments, the one or more support features 122 extend above the susceptor 104 to support the substrate 118 above the susceptor 104. In some embodiments, the one or more support features 122 extend about 1 to about 4 mm above the susceptor 104.
The support plate 106 is made of a first material. The first material may be generally transparent to microwave radiation. In some embodiments, the first material consists essentially of a polymer material. In some embodiments, the polymer material consists essentially of polyether ether ketone.
The susceptor 104 comprises a flat plate made of a second material different than the first material. In some embodiments, the susceptor 104 is a circular plate. In some embodiments, the susceptor 104 includes one or more openings 128 corresponding with the one or more support features 122. In some embodiments, the support plate 106 is made of a material that is more transparent to MW radiation than the susceptor 104. In some embodiments, the susceptor 104 is made of a material having a thermal conductivity of about 190 watts per meter kelvin (W/mK) or greater to enhance temperature uniformity of the susceptor 104 when heated. In some embodiments, the susceptor 104 is made of or fabricated from silicon carbide (SiC).
A metal foil 150 is disposed between the susceptor 104 and the microwave source 120. The metal foil 150, which reflects microwave radiation, advantageously disperses microwave radiation from the microwave source 120 to the susceptor 104, providing more uniform heating of the susceptor 104. In some embodiments, as shown in
The chamber 100 includes a lift mechanism 114 having one or more lifters 136 and configured to selectively raise or lower the substrate 118 with respect to the susceptor 104. The lift mechanism 114 may align the substrate 118 with the slit valve 108 to facilitate transferring the substrate 118 into and out of the interior volume 112. The lift mechanism 114 includes an actuator 140 coupled to the one or more lifters 136 to facilitate moving the one or more lifters 136. In some embodiments, the one or more lifters 136 are disposed radially outward of the support plate 106 and the susceptor 104. In some embodiments, at least one of the support plate 106 or the susceptor 104 include one or more lift openings configured to accommodate the one or more lifters 136 therethrough (see
In some embodiments, a temperature sensor 116 is coupled to the chamber body 102 and configured to take a temperature reading of the substrate 118. In some embodiments, the temperature sensor 116 is coupled to the floor 152 of the chamber body 102. In some embodiments, the temperature sensor 116 may be coupled to sidewalls of the chamber body 102.
In use, the lift mechanism 114 may raise the one or more lifters 136 to receive the substrate 118. The lift mechanism 114 may then lower the one or more lifters 136 to place the substrate 118 on the support plate 106. The microwave source 120 directs microwave radiation towards the susceptor 104 to heat the susceptor 104. Heat from the susceptor 104 heats the substrate 118 disposed above or on the susceptor 104 via radiative or conductive heat transfer to degas the substrate 118.
In some embodiments, the susceptor 104 includes one or more lift openings 408 for the one or more lifters 136. In some embodiments, the one or more lift openings 408 extend radially inward from an outer sidewall of the susceptor 104. In some embodiments, the support plate 106 includes one or more lift openings 410 for the one or more lifters 136. In some embodiments, the one or more lift openings 410 extend radially inward from an outer sidewall of the support plate 106. In some embodiments, the one or more lift openings 408 and the one or more lift openings 410 comprise two pairs of openings, or four openings. In some embodiments, the pairs of openings are disposed on opposite sides of the support plate 106 and the susceptor 104.
In some embodiments, the single unitary body 504 include one or more substrate guides 508 (2 shown in
In some embodiments, the one or more lifters 136 may be coupled to a lift ring 522 of the lift mechanism 114. In some embodiments, as shown in
In some embodiments, as shown in
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.
