The present invention relates to a method for measuring and controlling a characteristic performance parameter of a device under test (DUT) having an input port, such as a semiconductor active component in the form of a transistor, a FET, etc., operating at RF, microwave or (sub)millimetre-wave frequencies. In this document, characteristic performance parameters of the DUT are understood to be a source reflection coefficient ΓS of the DUT.
U.S. Pat. No. 8,269,508 describes a method for calculating the performance of a transistor with any source impedance ΓS. This method does not physically apply nor measure a different source impedance to the transistor, but it's a mathematical calculation done in a post-processing. Furthermore, the method as disclosed assumes that the transistor is perfectly unilateral (S12=0), which is rarely true.
US patent publication US2002/0196033 describes a method to measure the “hot-S22” of a DUT wherein the DUT is stimulated by a one-tone excitation signal at the input port, and the S22 under large-signal is measured by applying a probe tone at an offset frequency at its output.
U.S. Pat. No. 7,038,468 describes a method to measure all the DUT hot S-parameters by using probe tones at an offset frequency.
The article by Jan Verspecht et al. ‘Characterizing Components Under Large Signal Excitation: Defining Sensible “Large Signal S-Parameters”; 19th ARTFG, 1 Jun. 1997, pages 109-117, discloses a measurement technique enabling characterization of nonlinear microwave components under periodic large-signal excitation. A black-box model of the component is deduced from large-signal measurements.
US patent publication US2006/161409 discloses a behavioral model generation, wherein a device under test is stimulated with a large amplitude signal having a control frequency, and perturbed with a small amplitude signal tone, which is at a frequency offset slightly from a harmonic of the central frequency. The small amplitude signal tone at offset frequency is necessary to be able to extract a model of the device under test.
US patent publication US2009/184722 discloses a method of measurements including large-signal S scattering functions of a device under test having two distinct phases for small signals on a frequency grid established by intermodulation frequencies and harmonics of large tone signals.
International patent publication WO2007/081705 discloses a method of characterizing nonlinear behavior of amplifiers using load pull measurements, using a behavioral modelling technique.
A device under test (DUD can be represented in terms of travelling waves or in terms of its scattering matrix S. With respect to an active DUT, the scattering matrix S is sufficient enough to describe its linear behaviour under small signal conditions and in a 50Ω environment. However, when moving to a large-signal condition, the device performance changes non-linearly as a function of input power drive and as a function of the terminations provided at its input (source) and its output (load). Therefore, for an active DUT, it is important to measure certain characteristic performance parameters as a function of input power drive and of the source and load reflection coefficients ΓS and ΓL presented at the input and output of the active DUT. However, when stimulating a DUT from its input with a signal at a given frequency only, ΓIN and ΓL can be only measured as
The present invention seeks to provide a method to measure characteristic performance parameters of a DUT, more in particular a method to control and measure the source reflection coefficient of a DUT in a reliable, consistent and robust manner, without the need for any additional hardware, such as sources or impedance tuners.
According to the present invention, a method is provided for measuring characteristic performance parameters ΓS of an active device under test (DUD having an input port (or multiple input ports). The DUT operational behaviour is described by a scattering matrix S relating an input incident wave a1 and an input reflected wave b1 at the input port of the DUT, and/or an output incident wave a2 and an output reflected wave b2 at the output port of the DUT. The method comprises connecting the input port of the DUT to a signal generator, subjecting the DUT to an input test signal, and executing a first measurement a1′, b1′ of the incident wave a1 and reflected wave b1 at a DUT input reference plane. The method further comprises subjecting the DUT to a perturbation signal combined with the input test signal (or equivalently changing the input power to the DUD, and executing a second measurement a1″, b1″ of the incident wave a1 and reflected wave b1 at the DUT input reference planes, and determining the characteristic performance parameter from the first measurement and the second measurement, wherein the characteristic performance parameter is a source reflection coefficient ΓS.
The present invention provides method embodiments that allow to measure and control the source reflection coefficient ΓS presented to a DUT as a function of the input power drive and/or of load reflection coefficient ΓL, while the device is stimulated from its input port. Thus, the present invention provides a method to perform source pull in any test system having a signal source and an input coupler section, without the need for any additional hardware. Also, the method does not use excitations at offset frequencies. Further embodiments are described by the dependent claims. An advantageous aspect of the present invention is that the control of the source reflection coefficient is achieved by physically using a single signal source (the same source used for generating the input test signal to the DUD, and without the need for impedance tuners (e.g. passive mechanical or electronic tuners).
The present invention will be discussed in more detail below, with reference to the attached drawings, in which:
The present invention embodiments relate to a method for measuring a characteristic performance parameter ΓS of an active device under test (DUT) 10 having an input port. The DUT 10 can be a semiconductor component such as a transistor or a Field Effect Transistor (FED.
The present invention method embodiments can be applied on any measurement system comprised of a signal generator 1 and one or more receivers 4 to measure a1, b1 such as a Vector Network Analyzer (VNA) or a load-pull system.
The DUT 10 operational behaviour is described by a scattering matrix S relating an input incident wave a1 and an input reflected wave b1 at the input port of the DUT 10, and an output incident wave a2 and an output reflected wave b2 at the output port of the DUT 10. The method comprises connecting the input port of the DUT 10 to a signal generator 1 (see
In some embodiments of the present invention, the large signal input test signal is one of the group comprising: a continuous wave (CW) signal, a pulsed CW signal at a test frequency f1, a multi-tone signal, a modulated signal. The multi-tone signal can be comprised of multiple frequency components. Alternatively, the method described here can be applied at any or all the frequency components of the input signal. In a further embodiment of the present invention, the perturbation signal has a frequency corresponding to one or more frequency components of the large signal input test signal.
To control the source reflection coefficient to the DUT 10, the input test signal is perturbed during a test by adding a signal which can be controlled in amplitude and/or phase. In another embodiment of the present invention the perturbation signal comprises a perturbation of the amplitude of the (large signal) input test signal. In a further embodiment of the present invention, the perturbation signal comprises a perturbation of the phase of the (large signal) input test signal. By changing the amplitude and/or phase of the perturbation, the source reflection coefficient ΓS can be controlled, while ΓS can be measured at each perturbation by measuring the incident wave a1 and the reflected wave b1 with two subsequent measurements. The two subsequent measurements comprises the first measurement with the original test signal without applying any perturbation and the second measurement with applying the perturbation. Yet another embodiment of the present invention relates to subjecting the DUT 10 to a perturbation signal combined with the (large signal) input test signal that is obtained by controlling the signal generator 1.
In one embodiment of the present invention, the characteristic performance parameter is a source reflection coefficient ΓS, and the DUT reference plane is at the input port of the DUT 10. The input and reflected waves a1 and b1 are linked to the wave bS generated by the signal generator 1 and the source reflection coefficient ΓS can be related by the equation:
a
1
=bs+Γ
S
·b
1
According to this embodiment, the following steps can be used to measure and control ΓS:
A first reference measurement of a1 and b1 is performed at a fixed input power, providing the following equation:
α′1=bs0+ΓS0·b′1
where ΓS0 is the (passive) source reflection coefficient given by the source at the DUT input reference plane. ΓS0 is known a-priori either with a separate VNA measurement, or through a calibration measurement. The waves a1′ and b1′ are measured by the receiver 4. The parameter bs0 is a source wave, which is not required to be known as demonstrated below.
In a second step, the source signal generated by signal generator 1 can be varied in a controlled, but arbitrary way, in amplitude and/or phase by adding an arbitrary wave bs′ to the original source signal bs0 so that bs1=bs0+bs′. This can be achieved by simply varying the power generated by the signal generator 1. Further, a new measurement of a1 and b1 is taken with the receiver 4 providing the following equations:
a″
1
=bs
1+ΓS0·b″1
a″
1
=bs
0
+bs′+Γ
S0
·b″
1
The wave bs′ is effectively changing only the source impedance, instead of changing the source power. As a result, the following equation applies:
ΓS1·b″1=bs′+ΓS0·b″1
where ΓS1 is the effective new source impedance provided to the DUT.
Thus, the method of determining the characteristic performance parameter from the first measurement and the second measurement comprises measuring and controlling an effective source reflection coefficient ΓS1 in accordance with the formula:
wherein ΓS0 is a predetermined passive source reflection coefficient given by the source at the DUT input reference plane. To further control ΓS, the wave bs′ can be modified and a new equivalent ΓS1 can be calculated.
In another embodiment of the present invention, the first measurement is executed at a fixed input power of the (large signal) input test signal. In a further embodiment of the present invention, the second measurement is executed with a perturbation of the fixed input power of the (large signal) input test signal. This can be obtained by simply varying the power of the signal generator 1.
It is noted that the input test signal may be a large signal input test signal, but the method may also be seen as subjecting the DUT 10 to an input signal or an input wave bs0.
The perturbation can be implemented as modifying the power of the input test signal or modifying the power of the input wave bs0. The modification of power of the input test signal is equivalent to mathematically adding a new wave bs′ to the original wave bs0. By controlling the amplitude and phase of bs′ it is possible to change the input power. In the method embodiments as disclosed above it is mathematically imposed that the change in input power does not result in a physical change of input power, but rather in a physical change of ΓS.
The present invention has been described above with reference to a number of exemplary embodiments as shown in the drawings. Modifications and alternative implementations of some parts or elements are possible, and are included in the scope of protection as defined in the appended claims.
Number | Date | Country | Kind |
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18159754.3 | Mar 2018 | EP | regional |
Filing Document | Filing Date | Country | Kind |
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PCT/EP2019/055108 | 3/1/2019 | WO | 00 |