This application is an expanded version of U.S. Provisional Application Ser. No. 60/068,661, filed 12/23/97.
Number | Name | Date | Kind |
---|---|---|---|
4929837 | DiVita et al. | May 1990 | A |
4954142 | Carr et al. | Sep 1990 | A |
5084071 | Nenadic et al. | Jan 1992 | A |
5317346 | Garcia | May 1994 | A |
5356513 | Burke et al. | Oct 1994 | A |
5362669 | Boyd et al. | Nov 1994 | A |
5510652 | Burke et al. | Apr 1996 | A |
5693234 | Peters | Dec 1997 | A |
5933748 | Chou et al. | Aug 1999 | A |
5958795 | Chen et al. | Sep 1999 | A |
5960297 | Saki | Sep 1999 | A |
5966616 | Woerlee | Oct 1999 | A |
Number | Date | Country |
---|---|---|
4310345 | Oct 1994 | DK |
545263 | Jun 1993 | EP |
404213857 | Aug 1992 | JP |
Entry |
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Boos et al., Dry etching silicon carbide in plasma reactor—using chlorine-contg. gas for reactive ion etching and silica di:oxide mask, English Abstract of DE 4310345 A1, Oct. 6, 1994, 2 pages.* |
IBM Technical Disclosure Bulletin, III-V Semiconductor Ion Implantation Annealing Capping, Dec. 1, 1986, vol. 29, No. 7, 3 pages.* |
Chemical-Mechanical Polishing of Interlayer Dielectric: A Review; Ali et al.; Solid State Technology, Oct. 1994; pp. 63-70. |
Optimized Process Developed for Tungsten CMP; Kim et al.; Semiconductor International; Nov. 1995; pp. 119-123. |
Advances in CMP; DeJule; Semiconductor International; Nov. 1996; pp. 88-98. |
Number | Date | Country | |
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60/068661 | Dec 1997 | US |