Claims
- 1. A fabrication method, comprising the steps of:(a.) forming a layer of a dielectric material over a layer of conductive material, said dielectric material encasing a layer comprising silicon and carbon; (b.) planarizing said dielectric materials using said layer comprising silicon and carbon as a planarization stop layer.
- 2. The method of claim 1, wherein said layer comprising silicon and carbon is SiC.
- 3. The method of claim 1, wherein said conductive material comprises aluminum.
- 4. The method of claim 1, wherein said dielectric material comprises SiO2.
- 5. The method of claim 1, wherein said planarizing step uses chemical-mechanical polishing.
- 6. A fabrication method, comprising the steps of:(a.) forming a planarization stop layer, which comprises silicon and carbon, over an unpatterned layer of a conductive material; (b.) etching a pattern in said planarization stop layer and said layer of conductive material; (c.) filling gaps between remaining portions of said planarization stop layer and said layer of conductive material with a dielectric material; (d.) planarizing said dielectric material using said planarization stop layer.
- 7. The method of claim 6, wherein said planarization stop layer is SiC.
- 8. The method of claim 6, wherein said conductive material comprises aluminum.
- 9. The method of claim 6, wherein said dielectric material comprises SiO2.
- 10. The method of claim 6, wherein said planarizing step uses chemical-mechanical polishing.
Parent Case Info
This application claims benefit to Provisional application No. 60/102,732 filed Oct. 2, 1998.
US Referenced Citations (9)
Provisional Applications (1)
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Number |
Date |
Country |
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60/102732 |
Oct 1998 |
US |