Claims
- 1. A silicon-on-sapphire semiconductor structure comprising:a sapphire wafer of a predetermined thickness; a first silicon layer formed on a first surface of said sapphire wafer; p+ regions configured in a predetermined pattern indicative of a semiconductor structure bonded to said first surface of said sapphire wafer such that said silicon layer is interposed between said p+ regions and said sapphire wafer; a second silicon layer formed on a second surface of said sapphire wafer, said second surface opposite said first surface; and a sapphire layer having at least one aperture formed on said second silicon layer.
- 2. The structure of claim 1, wherein said first silicon layer is oxidized.
- 3. The structure as recited in claim 1 further comprising:a non-conductive material containing a series of apertures corresponding to contact areas in said p+ regions.
- 4. The structure as recited in claim 3 wherein said non-conductive material contains a depression to allow deflection of said semiconductor structure without contacting said non-conductive material.
RELATED APPLICATIONS
This application is a division application of commonly assigned, application Ser. No. 09/229,250, entitled, “METHOD OF MAKING SILICON-ON-SAPPHIRE TRANSDUCERS”, filed Jan. 12, 1999, now U.S. Pat. No. 6,235,611.
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