Slurry for touch-up CMP and method of manufacturing semiconductor device

Abstract

A slurry for touch-up CMP is provided, which includes water, colloidal silica having an average primary particle diameter of 5 to 60 nm, unsintered cerium oxide having an average primary particle diameter of 5 to 60 nm, a multivalent organic acid containing no nitrogen atoms, and a nitrogen-containing heterocyclic compound. The slurry has a pH of 8 to 12.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a cross-sectional view illustrating one step in the method of manufacturing a semiconductor device according to one embodiment of the present invention;

FIG. 2 is a cross-sectional view illustrating a step following the step shown in FIG. 1;

FIG. 3 is a perspective view illustrating a state of CMP; and

FIG. 4 is a cross-sectional view illustrating a step following the step shown in FIG. 2.

Claims

1. A slurry for touch-up CMP comprising: water;colloidal silica having an average primary particle diameter of 5 to 60 nm;unsintered cerium oxide having an average primary particle diameter of 5 to 60 nm;a multivalent organic acid containing no nitrogen atoms; anda nitrogen-containing heterocyclic compound;the slurry having a pH of 8 to 12.

2. The slurry according to claim 1, wherein the colloidal silica is included in the slurry at a content of 0.5 to 6 wt %.

3. The slurry according to claim 1, wherein the unsintered cerium oxide is included in the slurry at a content of 0.05 to 0.5 wt %.

4. The slurry according to claim 1, wherein the unsintered cerium oxide includes therein zirconium.

5. The slurry according to claim 4, wherein zirconium is included in the unsintered cerium oxide at a content of not more than 10% based on a weight of the unsintered cerium oxide.

6. The slurry according to claim 1, wherein the multivalent organic acid containing no nitrogen atoms is selected from the group consisting of tartaric acid, fumaric acid, phthalic acid, maleic acid, oxalic acid, citric acid, malic acid, malonic acid, succinic acid and glutamic acid.

7. The slurry according to claim 1, wherein the multivalent organic acid containing no nitrogen atoms is included in the slurry at a content of 0.001 to 2.0 wt %.

8. The slurry according to claim 1, wherein the nitrogen-containing heterocyclic compound is selected from the group consisting of quinaldinic acid, quinolinic acid, benzotriazole, benzoimidazole, 7-hydroxy-5-methyl-1,3,4-triazaindolidine, nicotinic acid and picolionic acid.

9. The slurry according to claim 1, wherein the nitrogen-containing heterocyclic compound is included in the slurry at a content of 0.01 to 2.0 wt %.

10. The slurry according to claim 1, further comprising resin particles.

11. The slurry according to claim 1, further comprising a surfactant.

12. A method for manufacturing a semiconductor device, comprising forming an insulating film above a semiconductor substrate;forming a recess in the insulating film;depositing a metal in the recess and above the insulating film to form a metal film; andselectively remove the metal film deposited above the insulating film by CMP using a slurry to remain the metal inside the recess, thereby exposing the insulating film, wherein the slurry having a pH of 8 to 12 and comprising water; colloidal silica having an average primary particle diameter of 5 to 60 nm; unsintered cerium oxide having an average primary particle diameter of 5 to 60 nm; a multivalent organic acid containing no nitrogen atoms; and a nitrogen-containing heterocyclic compound.

13. The method according to claim 12, wherein the metal film comprises a barrier metal and a Cu film.

14. The method according to claim 13, wherein the barrier metal, the Cu film and the insulating film are polished by the slurry at a rate of 30 nm/min or more.

15. The method according to claim 12, wherein the colloidal silica is included in the slurry at a content of 0.5 to 6 wt %.

16. The method according to claim 12, wherein the unsintered cerium oxide is included in the slurry at a content of 0.05 to 0.5 wt %.

17. The method according to claim 12, wherein the insulating film is formed of a low-dielectric-constant insulating material having a relative dielectric constant of less than 2.5, and the CMP is performed at a load of 100 gf/cm2 or less.

18. The method according to claim 17, wherein the low-dielectric-constant insulating material having a relative dielectric constant of less than 2.5 is selected from the group consisting of polysiloxane, hydrogen silsesquioxane, polymethyl siloxane, methylsilsesquioxane, polyarylene ether, polybenzoxazole, polybenzocyclobutene and a porous silica film.

19. The method according to claim 17, wherein the slurry further comprises resin particles.

20. The method according to claim 17, wherein the slurry further comprises a surfactant.