Claims
- 1. A bipolar transistor comprising:
- a collector region;
- an intrinsic base region within said collector region;
- an extrinsic base region within said collector region;
- a base link-up region within said collector region between said intrinsic base region and said extrinsic base region;
- a base-link diffusion source layer above said base link-up region;
- a barrier layer over said base-link diffusion source layer;
- a base electrode overlying said barrier layer and said extrinsic base layer; and
- an emitter region within said intrinsic base region.
- 2. The bipolar transistor of claim 1, wherein said base-link diffusion source layer comprises a silicate glass.
- 3. The bipolar transistor of claim 1, wherein said barrier layer comprises silicon dioxide.
- 4. The bipolar transistor of claim 1, wherein said barrier layer comprises silicon nitride.
- 5. The bipolar transistor of claim 1, wherein said base-link diffusion source layer comprises silicon-germanium.
- 6. The bipolar transistor of claim 1, wherein said bipolar transistor comprises two layers of polysilicon.
Parent Case Info
This is a Division, of application Ser. No. 08/392,597 filed Feb. 23, 1995.
US Referenced Citations (7)
Divisions (1)
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Number |
Date |
Country |
Parent |
392597 |
Feb 1995 |
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