Claims
- 1. A substrate for a transfer mask, which comprises a first silicon layer formed of monocrystalline silicon; a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 μm; and a second silicon layer formed on the silicon oxide film.
- 2. The substrate for a transfer mask according to claim 1, wherein said second silicon layer has a thickness ranging from 0.1 to 50 μm.
- 3. The substrate for a transfer mask according to claim 1, wherein said second silicon layer is formed of monocrystalline silicon.
- 4. A transfer mask comprising a first silicon layer formed of monocrystalline silicon; a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 μm; and a second silicon layer formed on the silicon oxide film and bearing therein a transfer pattern;
wherein openings are formed in said first silicon layer, and the portions of said silicon oxide film which correspond to said openings are removed.
- 5. The transfer mask according to claim 4, wherein said second silicon layer has a thickness ranging from 0.1 to 50 μm.
- 6. The transfer mask according to claim 4, wherein said second silicon layer is formed of monocrystalline silicon.
- 7. A method of manufacturing a transfer mask, the method comprising:
preparing a substrate comprising a first silicon layer formed of monocrystalline silicon, a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 μm, and a second silicon layer formed on the silicon oxide film; forming a transfer pattern on said second silicon layer; forming openings in said first silicon layer before or after forming said transfer pattern; and selectively removing portions of said silicon oxide film which correspond to said openings.
- 8. The method according to claim 7, wherein said second silicon layer has a thickness ranging from 0.1 to 50 μm.
- 9. The method according to claim 7, wherein said second silicon layer is formed of monocrystalline silicon.
- 10. A method of manufacturing a transfer mask, the method comprising:
preparing a substrate comprising a first silicon layer formed of monocrystalline silicon, a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 μm, and a second silicon layer formed on the silicon oxide film; forming openings in said first silicon layer; selectively removing portions of said silicon oxide film which correspond to said openings; and forming a transfer pattern in said second silicon layer.
- 11. The method according to claim 10, wherein said second silicon layer has a thickness ranging from 0.1 to 50 μm.
- 12. The method according to claim 10, wherein said second silicon layer is formed of monocrystalline silicon.
- 13. A method of irradiating a charged particle beam, the method comprising:
irradiating a charged particle beam onto the transfer mask as claimed in claim 4 in such a manner as to shape said charged particle beam in conformity with the configuration of a transfer pattern; and image-forming a pattern of said shaped charged particle beam on a substrate through a lens.
Priority Claims (2)
Number |
Date |
Country |
Kind |
2000-154661 |
May 2000 |
JP |
|
2000-374109 |
Dec 2000 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This is a Continuation Application of PCT Application No. PCT/JP01/03638, filed Apr. 26, 2001, which was not published under PCT Article 21(2) in English.
[0002] This application is based upon and claims the benefit of priority from the prior Japanese Patent Applications No. 2000-154661, filed May 25, 2000; and No. 2000-374109, field Dec. 8, 2000, the entire contents of both of which are incorporated herein by reference.
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/JP01/03638 |
Apr 2001 |
US |
Child |
10052509 |
Jan 2002 |
US |