Substrate for growing Pendeo epitaxy and method of forming the same

Abstract

A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present invention will be described in detailed exemplary embodiments thereof with reference to the attached drawings in which:

FIGS. 1A through 1C are cross-sectional views of a Pendeo-epitaxy growth substrate undergoing a conventional process of formation;

FIG. 2A is a diagram of a wafer used in a conventional Pendeo-epitaxy forming process;

FIGS. 2B and 2C are cross-sectional images of a conventional semiconductor device after the semiconductor device is grown by a Pendeo-epitaxy process;

FIG. 3 is a perspective view of a Pendeo-epitaxy growth substrate according to an embodiment of the present invention;

FIG. 4A is an image of a Pendeo-epitaxy growth substrate according to an embodiment of the present invention;

FIG. 4B is an image of a grown nitride using a Pendeo-epitaxy growth substrate according to an embodiment of the present invention;

FIGS. 5A and 5B are cross-sectional images of a semiconductor device formed using a Pendeo-expitaxy growth substrate according to an embodiment of the present invention; and

FIG. 6 is a graph of percentage defects of a sample in which a blocking solution layer is not formed and percent defects of another sample in which the blocking solution layer is formed during a Pendeo-expitaxy growth process.

Claims

1. A Pendeo-epitaxy growth substrate comprising: a substrate;a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth; andat least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction.

2. The Pendeo-epitaxy growth substrate of claim 1, wherein the first direction and the second direction are orthogonal to each other.

3. The Pendeo-epitaxy growth substrate of claim 1, wherein the substrate is formed of sapphire, silicon carbide, silicon, or ZnO.

4. The Pendeo-epitaxy growth substrate of claim 1, wherein the pattern areas and the solution blocking layer are formed of group III nitrides.

5. The Pendeo-epitaxy growth substrate of claim 1, wherein the first direction is a direction <1-100>, and the second direction is a direction <11-20>.

6. The Pendeo-epitaxy growth substrate of claim 1, wherein the solution blocking layer contacts edges of the pattern areas.

7. A method of forming a Pendeo-epitaxy growth substrate, the method comprising: coating group III nitrides on a substrate and forming a nitride layer;disposing a mask having openings corresponding to a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction on the nitride layer; andetching the nitride layer excluding the pattern areas and the solution blocking layer and removing the etched nitride layer.

8. The method of claim 7, wherein the first direction and the second direction are orthogonal to each other.

9. The method of claim 7, wherein the substrate is formed of sapphire, silicon carbide, silicon, or ZnO.

10. The method of claim 7, wherein the group III nitrides are GaN, AlGaN, InGaN, or AlInGaN.

11. The method of claim 7, wherein the solution blocking layer contacts the edges of the pattern areas.

12. The method of claim 4, wherein the group III nitrides are GaN, AlGaN, InGaN, or AlInGaN.