Patent Application
20250214198
This U.S. non-provisional patent application claims priority under 35 U.S.C.§ 119 to Korean Patent Application No. 10-2023-0192573 filed on Dec. 27, 2023, in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference.
The inventive concept relates to a substrate processing apparatus and a method of processing substrate using the same, and more specifically, relates to a substrate processing apparatus capable of charging a steam bar and a method of processing substrate using the same.
Various processes may be performed to fabricate a semiconductor device. For example, the semiconductor device may be fabricated by performing a photolithography process, an etching process, and a deposition process on a substrate such as a wafer. It may be required or desired that a surface of the wafer be planarized prior to various processes. A polishing process may be executed on the wafer for planarization. The polishing process may be fulfilled in a variety of ways. For example, a chemical mechanical planarization/chemical mechanical polishing (CMP) process may be adopted to planarize the wafer.
An object of the inventive concept is to provide a substrate processing apparatus configured to charge a steam bar using a steam bar power supply and a method of processing a substrate using the same.
An object of the inventive concept is to provide a substrate processing apparatus configured to adjust a distance between a steam bar and a polishing pad and a method of processing a substrate using the same.
An object of the inventive concept is to provide a substrate processing apparatus configured to spray steam diagonally and a method of processing a substrate using the same.
An object of the inventive concept is to provide a substrate processing apparatus including a steam nozzle inclined to spray steam obliquely and a method of processing a substrate using the same.
An object of the inventive concept is to provide a substrate processing apparatus including a shutter whose inclination configured to be adjusted to spray steam diagonally, and a method of processing a substrate using the same.
The problem to be solved by the inventive concept is not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.
A substrate processing apparatus according to some embodiments of the inventive concept includes a platen configured to support a polishing pad and configured to rotate about an axis of the platen. The axis extends in a first direction which is perpendicular to a surface of the platen. The substrate processing apparatus further includes a polishing head configured to support a substrate and disposed on the platen, and a slurry arm configured to supply a slurry onto the platen. The slurry arm includes a slurry arm body disposed on the platen and extending in a second direction perpendicular to the first direction, a steam bar combined with the slurry arm body and configured to supply steam. The steam bar includes a steam nozzle configured to spray the steam, and the steam bar extends to the platen. The substrate processing apparatus further includes a steam bar power supply configured to apply a voltage to the steam bar and to electrically charge the steam bar.
A substrate processing apparatus according to some embodiments of the inventive concept includes a platen rotatable about an axis extending in a first direction, a polishing head disposed on the platen and configured to rotate, and a slurry arm extending in a second direction perpendicular to the first direction and configured to supply slurry onto the platen. The slurry arm includes a slurry arm body disposed on the platen, a steam bar combined with the slurry arm body and configured to spray steam, and a steam bar power supply configured to apply a voltage to the steam bar and charging the steam bar with a charge of the same type as the slurry. The steam bar includes a steam nozzle configured to spray the steam.
A method of processing a substrate according to some embodiments of the inventive concept includes placing a substrate into a substrate processing apparatus and polishing the substrate. The substrate processing apparatus includes a disc-shaped polishing pad configured to polish the substrate and rotate about an axis extending in a first direction, a polishing head supporting the substrate and positioned on the polishing pad, and a slurry arm configured to supply a slurry onto the polishing pad. The slurry arm includes a slurry arm body disposed on the polishing pad and extending in a horizontal direction, a steam bar combined with the slurry arm body and including a steam nozzle configured to spray steam, and a steam bar power supply electrically connected to the steam bar. The slurry arm body includes a slurry nozzle configured to spray a slurry. The method of processing a substrate further includes spraying the slurry from the slurry nozzle toward the polishing pad, applying a voltage to the steam bar by the steam bar power supply to charge the steam bar, and rotating the polishing pad and the polishing head.
Specific details of other embodiments are included in the detailed description and drawings.
Example embodiments will be more clearly understood from the following brief description taken in conjunction with the accompanying drawings. The accompanying drawings represent non-limiting, example embodiments as described herein.
Hereinafter, embodiments of the inventive concept will be described with reference to the attached drawings. The same reference numerals may refer to the same elements throughout the specification.
Hereinafter, D1 may be referred to as a first direction, D2 crossing the first direction D1 may be referred to as a second direction, and D3 crossing each of the first direction D1 and the second direction D2 may be referred to as a third direction. The first direction D1 may be referred to as an upward direction, and the direction opposite to the first direction D1 may be referred to as a downward direction. The first direction D1 and the direction opposite to the first direction D1 may be referred to as a vertical direction. Additionally, each of the second direction D2 and the third direction D3 may be referred to as a horizontal direction.
Referring to
The polishing pad 71 may have a disk shape. The polishing pad 71 may be disposed on an upper surface of a platen 73. More specifically, a lower surface of the polishing pad 71 may be in contact with the upper surface of the platen 73. A rotation center of the polishing pad 71 may be disposed on the same line as a rotation center of the platen 73. The polishing pad 71 may polish the substrate W. The polishing pad 71 may rotate. Referring to
The platen 73 may support the polishing pad 71. The platen 73 may rotate the polishing pad 71. More specifically, the platen 73 may be rotated about (or rotate around) a central axis AX1 by a driving unit or the like to rotate the polishing pad 71. When the polishing pad 71 has a disk shape, the platen 73 may also have a disk shape. As the platen 73 rotates, the polishing pad 71 rotates and the substrate W may be polished.
The conditioner 1 may polish a portion of the polishing pad 71. The conditioner 1 may be in selective contact with the upper surface of the polishing pad 71. While the polishing pad 71 is rotating, the conditioner 1 may be in contact with the upper surface of the polishing pad 71. By polishing by the conditioner 1, a state of the upper surface of the polishing pad 71 may be changed while the polishing process for the substrate W is in progress. For example, the conditioner 1 may improve the condition of the polishing pad 71 by polishing the polishing pad 71 itself. The conditioner 1 may rotate independently of the platen 73. A relative rotational speed of the conditioner 1 with respect to the platen 73 may be variously changed over time. A relative position of the conditioner 1 on the platen 73 may be variously changed over time. More specifically, the conditioner 1 may move horizontally on the polishing pad 71. The conditioner 1 may move upward from a point where a lower surface of the conditioner 1 is in contact with the polishing pad 71.
The slurry arm 3 may supply a slurry to the polishing pad 71. The slurry arm 3 may supply a slurry SL (e.g., see
The polishing head 5 may support and/or rotate the substrate W. More specifically, the polishing head 5 may place the substrate W on the polishing pad 71 such that one side of the substrate W faces the polishing pad 71. The polishing head 5 may rotate independently of the platen 73. A relative rotational speed of the polishing head 5 with respect to the platen 73 may be variously changed over time. A relative position of the polishing head 5 on the platen 73 may be variously changed over time. The polishing head 5 may move horizontally on the polishing pad 71. The polishing head 5 may move upward from a point where lower surfaces of the substrate W and a retainer ring 55 are in contact with the polishing pad 71. Referring to
The head support member 51 may place the substrate W at a certain position on the polishing pad 71. The substrate W may be polished on the polishing pad 71. The head support member 51 may be combined on the polishing head body 53.
The polishing head body 53 may support the substrate W. For example, the retainer ring 55 and the substrate W may be combined with a lower surface of the polishing head body 53. More specifically, the polishing head body 53 may adsorb the substrate W to a lower surface thereof using vacuum pressure. To this end, the polishing head body 53 may include a porous structure exposed on the lower surface. The head support member 51 may be combined with an upper surface of the polishing head body 53. The polishing head body 53 may include a pressure member capable of applying pressure to the substrate W. The pressure member may include several zones capable of applying pressure in a vertical direction to the substrate W. Each zone of the pressure member may have different pressures that are capable of being applied to the substrate W for each zone. The pressure member may control the pressure that is capable of being applied to the substrate W for each zone. However, the structure of the polishing head body 53 is not limited thereto. The polishing head body 53 may further include other components for supporting the substrate W.
The retainer ring 55 may support the substrate W. The retainer ring 55 may surround a circumference of the substrate W. The retainer ring 55 may be combined with the polishing head body 53. More specifically, an upper surface of the retainer ring 55 may be in contact with the polishing head body 53. The upper surface of the retainer ring 55 may be combined with the polishing head body 53. The retainer ring 55 may provide a slurry groove. The slurry groove may be recessed upward from a lower surface of the retainer ring 55 toward an upper surface of the retainer ring 55. The slurry grooves may have a straight or curved shape. The slurry SL may flow into and be discharged from the substrate W through the slurry groove.
The slurry arm 3 may include a slurry arm body 31, a steam bar 33, and a steam bar power supply 35 (e.g., see
The slurry arm body 31 may support the steam bar 33. The slurry arm body 31 may be disposed on the platen 73. The slurry arm body 31 may be positioned on the polishing pad 71. The slurry arm body 31 may be parallel to the polishing pad 71. The slurry arm body 31 may extend in a horizontal direction. The slurry arm body 31 may extend in a second direction D2 perpendicular to the first direction D1. Referring to
The steam bar 33 may be combined with the slurry arm body 31. The steam bar 33 may be connected to the slurry arm body 31. The steam bar 33 may be supported by the slurry arm body 31. The steam bar 33 may spray water vapor. More specifically, the steam bar 33 may spray the water vapor toward the polishing pad 71. The steam bar 33 may include a steam bar body 331 and a steam nozzle 333. The steam nozzle 333 may be combined with the slurry arm body 31. The steam nozzle 333 may penetrate the steam bar body 331. The steam nozzle 333 may extend in a straight line. The steam nozzle 333 may spray water vapor (i.e., steam). The steam nozzle 333 may extend toward the platen 73. The steam nozzle 333 will be described in detail later.
The steam bar power supply 35 may apply a voltage to the steam bar 33 such that the steam bar 33 is capable of having an electric charge. The steam bar power supply 35 may charge the steam bar 33. The steam bar power supply 35 may include a power source and a connection member. The power source may store power to be supplied to the steam bar 33. The power source may supply power to the steam bar 33. The connector may connect the power source and the steam bar 33. The connector may include a conductor. A voltage that the steam bar power supply 35 applying to the steam bar may be −1500V to 1500V.
The surface potential meter 4 (also referred to as a “surface potential measurement unit”), e.g., a voltmeter, may measure a surface potential of the polishing pad 71 supported by the platen 73. The surface potential meter 4 may measure a surface potential of the slurry SL on the polishing pad 71. Hereinafter, in this specification, the surface potential of the polishing pad 71 may be the same as the surface potential of the slurry SL.
The central controller 2 may be electrically connected to the steam bar power supply 35. The central controller 2 may receive surface potential data of the polishing pad 71 or the slurry SL from the surface potential meter 4. The central controller 2 may control the steam bar power supply 35 using the surface potential data received from the surface potential meter 4. The central controller 2 may provide feedback to the steam bar power supply 35 using surface potential data. For example, when the surface potential of the slurry SL is positive (+), the central controller 2 may charge the steam bar 33 into positive (+) type using the steam bar power supply 35. When the surface potential of the slurry SL is negative (−), the central controller 2 may charge the steam bar 33 into negative (−) type using the steam bar power supply 35. The central controller 2 may control the voltage applied by the steam bar power supply 35 to the steam bar based on the surface potential data of the slurry SL.
Referring to
The rotation direction of the polishing pad 71 may be the same as a direction of the steam sprayed by the steam nozzle 333. As the steam nozzle 333 is inclined in the rotation direction of the polishing pad 71, the steam may be sprayed in the same direction as the rotation direction of the polishing pad 71. As a result, the slurry SL may be prevented from bouncing and attaching to the steam bar 33.
Referring to
Referring to
The slurry arm driver 6 may be electrically connected to the central controller 2. The central controller 2 may operate the slurry arm driver 6 based on data obtained from the surface potential meter 4. For example, when a repulsive force applied between the slurry SL and the charged steam arm 3 is strong, the central controller 2 may use the slurry arm driver 6 to move the slurry arm 3 away from the polishing pad 71. When the repulsive force applied between the slurry SL and the charged slurry arm (3) is weak, the central controller 2 may use the slurry arm driver 6 to bring the slurry arm 3 closer to the polishing pad 71. The central controller 2 may prevent the slurry SL from attaching to the slurry arm 3 using the steam bar power supply 35 and the slurry arm driver 6.
Referring to
The slurry arm 3 may further include a shutter 37. The shutter 37 may have a plate shape. However, the inventive concept is not limited thereto. The shutter may be configured to change a spraying direction of the steam. The shutter 37 may spray steam diagonally. The shutter 37 may spray steam obliquely toward the polishing pad 71 regardless of an inclination of the steam nozzle 333. The shutter 37 may be connected to the steam bar 33. A level of a lower surface of the steam nozzle 333 may be higher than a level of an upper surface of the shutter 37. One side of the shutter 37 may be connected to the steam bar 33. The one side of the shutter 37 may be fixed to the steam bar 33. Another side of the shutter 37 may move away from the steam bar 33 toward the platen 73. More specifically, the shutter 37 may include a first shutter region 371 and a second shutter region 373. The first shutter region 371 may be connected to the steam bar 33. The first shutter region 371 may extend in the second direction. The second shutter region 373 may be spaced apart from the first shutter region 371 in a third direction D3 perpendicular to the first direction D1 and the second direction D2. The second shutter region 373 may move between the steam bar 33 and the polishing pad 71. The second shutter region 373 may move between the steam bar 33 and the platen 73. As the second shutter region 373 moves between the steam bar 33 and the platen 73, an inclination of the shutter 37 may be changed. A second angle A2 formed by the shutter 37 and the steam bar 33 may be 0° to 90°. Referring to
Referring to
According to the substrate processing apparatus and the method of processing the substrate using the same according to embodiments of the inventive concept, the slurry may be prevented from adhering to the steam bar by charging the steam bar. The steam bar may be charged positively (+) or negatively (−) by the steam bar power supply. The charging state of the steam bar may be variously changed depending on the charging state of the slurry. The steam bar may be charged to the same sign as the slurry. As the steam bar and the slurry are charged to the same sign, a repulsive force may occur between the steam bar and the slurry. The slurry may be prevented from sticking to the steam bar by the repulsive force between the steam bar and the slurry. When the slurry sticks to the steam bar, the steam bar and steam nozzle may become contaminated. When the slurry sticks to the steam bar, it can detrimentally affect the spraying of steam. When the slurry sticks to the steam bar and solidifies and the solidified slurry falls from the steam bar, it may have a negative effect on the substrate.
According to the substrate processing apparatus and the method of processing the substrate using the same according to embodiments of the inventive concept, the repulsive force between the steam bar and the slurry or the steam bar and the polishing pad may be adjusted. A degree of charging of the steam bar may be adjusted by the steam bar power supply. The steam bar power supply may adjust the degree of charging of the steam bar by adjusting the voltage applied to the steam bar. When the degree of charging of the steam bar becomes stronger, the repulsive force between the steam bar and the slurry may become stronger. When the degree of charging of the steam bar decreases, the repulsive force between the steam bar and the slurry may weaken. When the slurry is weakly charged, the steam bar power supply may increase the voltage applied to the steam bar. When the slurry is highly charged, the steam bar power supply may lower the voltage applied to the steam bar. The slurry arm driver may adjust the distance between the slurry arm and the polishing pad. The repulsive force between the steam bar and the slurry may be adjusted by the slurry arm driver. When the repulsive force between the steam bar and the slurry is strong, the distance between the slurry arm and the polishing pad may be increased by the slurry arm driver. When the repulsive force between the steam bar and the slurry is weak, the distance between the slurry arm and the polishing pad may be reduced by the slurry arm driver. Feedback may be provided to the steam bar power supply by the central controller. The central controller may control the steam bar power supply to keep the repulsive force between the steam bar and polishing pad constant or changing.
According to the substrate processing apparatus and the method of processing the substrate using the same according to embodiments of the inventive concept, the spray angle of steam may be adjusted. The steam nozzle may extend straight or at an angle. The angle formed between the steam nozzle and the steam bar may be 0° to 90°. As the steam nozzle extends obliquely, the steam may be sprayed obliquely. By using the shutter, the steam may be sprayed obliquely regardless of the inclination of the steam nozzle. The angle formed between the shutter and the steam bar may be 0° to 90°. The shutter may spray steam at an angle toward the polishing pad. The shutter may prevent the slurry on the polishing pad from sticking to the steam bar.
According to the substrate processing apparatus of the inventive concept and the method of processing the substrate using the same, the steam bar may be charged by the steam bar power supply.
According to the substrate processing apparatus of the inventive concept and the method of processing the substrate using the same, the distance between the steam bar and the polishing pad may be adjusted.
According to the substrate processing apparatus of the inventive concept and the method of processing the substrate using the same, the steam may be sprayed obliquely.
According to the substrate processing apparatus of the inventive concept and the method of processing the substrate using the same, the steam nozzle inclined may be provided to spray the steam diagonally.
According to the substrate processing apparatus of the inventive concept and the method of processing the substrate using the same, the shutter whose inclination may be adjusted to spray steam diagonally may be included.
While embodiments are described above, a person skilled in the art may understand that many modifications and variations are made without departing from the spirit and scope of the inventive concept defined in the following claims. Accordingly, the example embodiments of the inventive concept should be considered in all respects as illustrative and not restrictive, with the spirit and scope of the inventive concept being indicated by the appended claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2023-0192573 | Dec 2023 | KR | national |
