SYSTEM AND PROCESS IMPLEMENTING A WIDE RIBBON BEAM ION SOURCE TO IMPLANT IONS IN MATERIAL TO MODIFY MATERIAL PROPERTIES

FIELD OF THE DISCLOSURE

The disclosure relates to a system implementing a wide ribbon beam ion source to implant ions in glass. The disclosure further relates to a process implementing a wide ribbon beam ion source to implant ions in glass. More particularly, a system implementing a wide ribbon beam ion source to implant ions in glass to reduce reflective properties of the glass; and a process implementing a wide ribbon beam ion source to implant ions in glass to reduce reflective properties of the glass. Additionally, the disclosure relates to a system implementing a wide ribbon beam ion source to implant ions in other materials; and a process implementing a wide ribbon beam ion source to implant ions in other materials. Moreover, the disclosure relates to a system implementing a wide ribbon beam ion source to implant ions for industrial processes; and a process implementing a wide ribbon beam ion source to implant ions for industrial processes.

BACKGROUND OF THE DISCLOSURE

Ion beam implantation of positive ions can be used to modify a surface of optically transparent materials (glass, sapphire, quartz) such that the surface becomes substantially non-reflecting. However, the process has never been commercialized because ion implantation has not been scalable for volume manufacturing. In particular, the inability to scale a single source beam to lengths greater than about 12 inches has presented substantial engineering challenges, cost challenges, and/or the like that have prevented the implantation process from serving a demand for anti-reflective glass. Instead, anti-reflective glass has been provided mainly by either using an organic polymeric or a thin film sputtered coating. Both solutions utilize coatings on the glass rather than being part of the glass. Moreover, both solutions typically lack the environmental robustness of the surface modification approach of implantation.

U.S. Pat. No. 9,711,318 to Nicholas White enables an expansion of a ribbon ion beam to an arbitrary length, effectively functioning as a line source similar in form to other sources (sputter, pre-treatment, vapor deposition) commonly used in large scale glass processing equipment. The White patent references limited application possibilities including semiconductor doping, sputtering, ion beam assisted sputtering, surface hardening, and control of surface charging. In particular, the White patent does not disclose glass surface modification. Moreover, the White patent fails to address other challenges in glass processing including excessive heating of the glass, tailoring of an implantation profile in the glass to achieve an optimized result, and/or the like.

Accordingly, a system and process implementing a wide ribbon beam ion source to implant ions in materials, such as glass to reduce reflective properties of the glass, that addresses numerous manufacturing issues is needed.

SUMMARY OF THE DISCLOSURE

The foregoing needs are met, to a great extent, by the disclosure, wherein in one aspect a system and process implementing a wide ribbon beam ion source to implant ions in glass to reduce reflective properties of the glass.

One aspect includes a treatment system that is configured to provide a vacuum environment such that an ion source may be operated and product may be transported within the vacuum environment with the ion source and attendant process includes at least two of the following features a ribbon beam ion source such that the ion source provides energetic ions to bombard or implant into a product to modify a surface region of the product; a temperature control system that includes a heatsink configured to control a temperature of the product during ion bombardment by the ribbon beam ion source; a gas cushion system configured to provide a gas cushion to the product such that the gas cushion promotes heat transfer from the product to the heatsink; a product movement system configured to move the product through the treatment system past the ribbon beam ion source; a mounting system for the ribbon ion source allowing a distance from the source to the product to be configured and the angle between the source and the product to be configured to provide distance from source to product of two to twenty inches and to provide an incident angle of the ion beam to the product to be chosen as between thirty degrees and ninety degrees; and a system controller configured to control at least one the following: the gas cushion system, the ribbon beam ion source, the temperature control system, the heatsink, and the product movement system.

One aspect includes a process for treating a product, the process for treating a product implementing a treatment system, the process for treating a product includes implanting ions into a product to modify a portion of the product with a ribbon beam ion source; controlling a temperature of the product during ion implantation by the ribbon beam ion source with a temperature control system that includes a heatsink; providing a gas cushion to the product with a gas cushion system; moving the product through the treatment system past the ribbon beam ion source with a product movement system; and controlling with a system controller at least one the following: the gas cushion system, the ribbon beam ion source, the temperature control system, the heatsink, and the product movement system.

One aspect includes a treatment system that includes a ribbon beam ion source that is configured to implant ions into a product to modify a portion of the product; a temperature control system that includes a heatsink configured to control a temperature of the product during ion implantation by the ribbon beam ion source; an gas cushion system configured to provide an gas cushion to the product; a product movement system configured to move the product through the treatment system past the ribbon beam ion source; and a system controller configured to control at least one the following: the gas cushion system, the ribbon beam ion source, the temperature control system, the heatsink, and the product movement system.

There has thus been outlined, rather broadly, certain aspects of the disclosure in order that the detailed description thereof herein may be better understood, and in order that the present contribution to the art may be better appreciated. There are, of course, additional aspects of the disclosure that will be described below and which will form the subject matter of the claims appended hereto.

In this respect, before explaining at least one aspect of the disclosure in detail, it is to be understood that the disclosure is not limited in its application to the details of construction and to the arrangements of the components set forth in the following description or illustrated in the drawings. The disclosure is capable of aspects in addition to those described and of being practiced and carried out in various ways. Also, it is to be understood that the phraseology and terminology employed herein, as well as the abstract, are for the purpose of description and should not be regarded as limiting.

As such, those skilled in the art will appreciate that the conception upon which this disclosure is based may readily be utilized as a basis for the designing of other structures, methods and systems for carrying out the several purposes of the disclosure. It is important, therefore, that the claims be regarded as including such equivalent constructions insofar as they do not depart from the spirit and scope of the disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a perspective view of a treatment system according to the disclosure.

FIG. 1B illustrates a more detailed perspective view of the treatment system according to FIG. 1A.

FIG. 1C illustrates a more detailed perspective view of the treatment system according to FIG. 1B.

FIG. 2A illustrates a side view of a glass surface treatment system according to the disclosure.

FIG. 2B illustrates an end view of the glass surface treatment system according to FIG. 2A.

FIG. 2C illustrates a perspective view of the glass surface treatment system according to FIG. 2A.

FIG. 2D illustrates another end view of the glass surface treatment system according to FIG. 2A.

FIG. 2E illustrates another side view of the glass surface treatment system according to FIG. 2A.

FIG. 2F illustrates another side view of the glass surface treatment system according to FIG. 2A.

FIG. 2G illustrates a schematic of the glass surface treatment system according to FIG. 2A.

FIG. 3A illustrates an exemplary processing device that may be utilized at least in part for the processes according to the disclosure.

FIG. 3B illustrates an exemplary process in accordance with aspects of the disclosure.

FIG. 4 is a cross sectional view of a source assembly according to an aspect of the disclosure.

FIG. 5A is a perspective sectional view of an arc discharge chamber according to FIG. 4.

FIG. 5B is a perspective overhead view of a magnetic field generating yoke subassembly according to FIG. 4.

FIG. 6 is an exploded section view showing structural arrangements of and aligned inter-fittings for an arc discharge chamber and a primary electron trap assembly that includes an intervening partition barrier and a magnetic field generating yoke subassembly according to FIG. 4.

FIG. 7A is a partially exploded section view of an ion source according to the disclosure.

FIG. 7B shows a perspective view of an ion source, partially disassembled, according to FIG. 7A.

FIG. 8A is a perspective view of a second aspect which shows a positioning of extraction electrodes according to the disclosure.

FIG. 8B is a cross section view of the second aspect showing the detailed mounting of the extraction electrodes according to FIG. 8A.

FIG. 9 is a partially exploded cross-sectional view of a third aspect of the ion source according to the disclosure.

FIG. 10 shows lines of magnetic flux superimposed over a cross-section of an arc discharge chamber in the first aspect according to FIG. 4.

FIG. 11 shows contours of magnetic field strength and a null point at zero value in the magnetic field superimposed on the cross section of the arc discharge chamber in the first aspect according to FIG. 4.

FIG. 12 shows a portion of the spatial zone within the cavity volume of the arc discharge chamber in which primary electrons from the thermionic cathode are trapped by the combined magnetic fields, superimposed on the cross section of the arc discharge chamber in the first aspect according to FIG. 4.

DETAILED DESCRIPTION

The disclosure will now be described with reference to the drawing figures, in which like reference numerals refer to like parts throughout. Aspects of the disclosure advantageously provide a device and process implementing a wide ribbon beam ion source to implant ions in glass to reduce reflective properties of the glass.

The disclosed system and process enables implementation of a ribbon beam ion source for surface treatment of glass in a high-volume manufacturing environment as described herein. In aspects, the disclosed system and process may implement a temperature control system to control the temperature of the glass during the ion implantation, such as a means to control the temperature of the glass during the ion implantation process. In this regard, a bombardment of the glass by highly energetic ions causes substantial heating of the glass. In a typical industrial glass coater, the glass might reach temperatures that can cause breakage, warping, melting, and/or the like. The disclosed temperature control system may utilize a heat sink, for example a water-cooled plate, for energy removal from the glass so that the glass temperature can be controlled.

In aspects, the disclosed temperature control system that may utilize the heat sink, for example a water-cooled plate, may include a high emissivity coating adjacent to the backside of the glass but not physically touching the glass. In further aspects, the disclosed temperature control system may address the heating problem by replacing a roller transport system used in typical glass processing equipment with a gas cushion system, which may be implemented as a gas cushion transport system. In this regard, a cooled plate may be implemented with a myriad of gas injection ports that may be configured to flow an inert gas, such as one of the noble gases, hydrogen, nitrogen, and/or the like to create a cushion of the gas between the glass and the cooled plate. The presence of the gas in the gap enhances the energy removal from the glass by providing gas conduction heat removal, radiative heat removal, and/or the like.

In aspects, the gas cushion system gas cushion may be solely implemented for the glass transport. In aspects, the gas cushion system gas cushion may not provide any glass transport. In aspects, the gas cushion system gas cushion may provide limited glass transport. In aspects, a glass movement system may be implemented by a roller system while the temperature control system, such as a cooled plate, is implemented, which may be positioned between the rollers of the glass movement system. In aspects, the gas cushion system may implement a gas pressure between the temperature control system, such as the cooled plate, and the glass be higher than a chamber pressure. For example, the gas cushion system may implement a gas pressure of greater than or equal to a pressure of 1 torr in certain applications to ensure effective heat removal. In aspects, the gas cushion system may implement the gas, which may be any gas. However, in aspects, the gas cushion system may implement the gas as a non-reactive gas that may be effectively pumped, has high heat capacity, and/or the like.

The temperature control system, which may implement the cooling plate, may have a border that touches the glass to aid in trapping the gas, achieving a higher pressure in a plate gap and/or glass gap. Moreover, the gas cushion system may implement higher pressure, which may be beneficial to enhance heat removal rates. The border of the temperature control system may be configured as a non-marring material such as a solid fluorocarbon, a brush, a fabric, and/or the like.

The ribbon beam ion source may include a controller to control the voltage, current and/or divergence of the generated ion beam. In particular, the controller may control a divergence of the ion beam of the ribbon beam ion source such that the ion beam may achieve a maximum energy but spreads the energy over a larger area on the glass to prevent localized extremes of heating.

Additionally, the system may, by design, control a positioning of the ion beam of the ribbon beam ion source, such as the distance from the glass, a height of the ion beam of the ribbon beam ion source over the glass, and/or the like. In particular aspects, the controller may control a positioning of the ion beam of the ribbon beam ion source to be varied based on process conditions, a design of the extraction electrode assembly, the desired glass modification, a particular application, and/or the like. In typical ion beam sources, a beam divergence is minimized. However, the disclosed system and process may implement for certain applications a taller beam resulting in an overall lower density of energy per unit area.

The disclosed system and process may implement an ion beam control system. The ion beam control system may be configured to control an ion implant density, and ion implant depth, and/or the like. In particular aspects, the ion beam control system may be configured to control an ion implant density, an ion implant depth, and/or the like to control an effectiveness of the anti-reflective treatment to achieve a gradation of the index of refraction from the air/glass interface down to the limit of the implant.

The ion beam control system may be configured to adjust plasma conditions in the ion beam source. In aspects, the ion beam control system may be configured to generate multiply-charged ions that may be accelerated to greater energies and, therefore, be implanted to greater depths than singly charged ions. Implementation of this aspect may result in a graded index effect as desired for certain applications. In other aspects, the ion beam control system may be configured to utilize singly charged ions for certain other applications.

The disclosed system and process may implement use of a single gas or a gas mixture, such as one or more of nitrogen, argon, other noble gases, and/or the like to provide a variable depth implant of the ions. In aspects, the variable depth implant of the ions may generate a graded index structure.

Additionally, the disclosed system and process may be configured and/or implemented to create a nano-textured surface on the glass to enhance cleanability. Moreover, the disclosed system and process may be configured and/or implemented to tune or otherwise adjust process conditions to result in a graded index of refraction in the glass due to the presence of single and multiple-charged ions. Furthermore, the disclosed system and process may be configured and/or implemented to be a linearly scalable ion beam source capable of high ion currents and narrow beam outputs controllable from 100 eV up to 100 keV. Additionally, the disclosed system and process may be configured and/or implemented to enable cost effective ion beam treatments for high-throughput industrial processes.

In further aspects, the disclosed system and process may be configured and/or implemented to be linear scalable to any arbitrary treatment width. Moreover, the disclosed system and process may be configured and/or implemented to have a beam shape tunable to as narrow as 2° divergence. Additionally, the disclosed system and process may be configured and/or implemented to have ion currents up to 30 mA/cm². Furthermore, the disclosed system and process may be configured and/or implemented to implement ion energy output from 100 eV up to and exceeding 100 keV. Additionally, the disclosed system and process may be configured and/or implemented to have a single slit architecture that may enable cost effective implementation. The combination of linear scalability and high ion flux may result in the only ion beam source capable of supporting large area and high productivity ion-assisted, ion-milling, ion-implantation, and/or the like applications.

In further aspects, the disclosed system and process may be configured and/or implemented utilizing a simple filament that may be used to provide electron generation through thermionic emission. Additionally, the disclosed system and process may be configured and/or implemented with a triode electrode design that may provide ion extraction, suppression and ground to generate a neutral beam. Moreover, the disclosed system and process may be configured and/or implemented with a single slit architecture that may enable high ion fluxes and simplified alignment. Additionally, the disclosed system and process may be configured and/or implemented with a magnetic plasma confinement that may allow for arbitrary beam length.

In further aspects, the disclosed system and process may be configured and/or implemented with a wide process window and many potential applications. In particular, the disclosed system and process may be configured and/or implemented at 100 eV to 300 eV to support ion assisted deposition applications like thin Ag for low-E windows, Diamond-Like Carbon (DLC) coatings, transparent conductive oxides, surface activation, and/or the like. Additionally, the disclosed system and process may be configured and/or implemented at 300 eV to 10 keV that may support ion milling and/or ion etching for large format substrates, cutting tools, linear ion beam sputter deposition, and/or the like. Moreover, the disclosed system and process may be configured and/or implemented at up to 60 keV that may support ion implantation applications such as anti-reflection treatments, surface nitriding, and/or the like. Additionally, the disclosed system and process may be configured and/or implemented to operate, regardless of the specific ion energy, with a source that may be scalable to large area and high productivity.

In aspects, the disclosed system and process may be configured and/or implemented such that ion implantation can be used to alter the physical properties of a glass surface to induce an anti-reflection (AR) effect. The AR effect is incorporated into the glass itself, resulting in a robust, graded-index AR interface. While the fundamental technique is proven, implantation has not been commercialized for large area, high volume processing due to the lack of a source design capable of meeting cost metrics for applicable industries. The disclosed system and process may be configured and/or implemented for supporting cost effective AR and other surface treatments for solar applications, LED applications, display applications, automotive applications, and/or the like.

FIG. 1A illustrates a perspective view of a treatment system according to the disclosure.

FIG. 1B illustrates a more detailed perspective view of the treatment system according to FIG. 1A.

FIG. 1C illustrates a more detailed perspective view of the treatment system according to FIG. 1B.

The various aspects illustrated in FIG. 1A, FIG. 1B, and FIG. 1C and described herein may include any one or more aspects, components, and/or the like as described herein. In particular, FIG. 1A, FIG. 1B, and FIG. 1C, illustrate a treatment system 400 that may include a ribbon beam ion source 108, a processing chamber 152, a support structure 154, power equipment 114, and/or the like. In aspects, the treatment system 400 may be implemented as a glass surface treatment system, a product treatment system, a product surface treatment system, an industrial process treatment system, and/or the like. In aspects, the treatment system 400 may be implemented as a glass surface treatment system and may implement the ribbon beam ion source 108 that may be configured and/or implemented such that ion implantation may be used to alter the physical properties of a glass surface to induce an anti-reflection (AR) effect. The AR effect may be incorporated into the glass itself, resulting in a robust, graded-index AR interface. In aspects, the treatment system 400 implementing the ribbon beam ion source 108 may be configured and/or implemented for supporting cost effective AR and other surface treatments for solar applications, LED applications, display applications, automotive applications, and/or the like. In this regard, an untreated glass surface reflects a high percentage of an incident light. Accordingly, this characteristic high percentage of reflection in untreated glass reduces energy efficiency of solar applications, limits viewability and creates undesirable glare in displays, such as computer displays, mobile phone displays, and/or the like, limits viewability and creates undesirable glare in windows in automotive applications, building applications, and/or the like. Accordingly, the treatment system 400 may induce an anti-reflection (AR) effect in glass products to increase energy efficiency of solar applications, increase viewability and reduce undesirable glare in displays, such as computer displays, mobile phone displays, and/or the like, increase viewability and reduce undesirable glare in windows in automotive applications, building applications, and/or the like.

The ribbon beam ion source 108 may be implemented utilizing a number of different technologies. In this regard, the disclosure includes exemplary implementations of the ribbon beam ion source 108 with reference to FIGS. 4-12 and the associated description thereof that in combination with the various components of the treatment system 400 as described herein may achieve the disclosed implementations as well as others. However, the ribbon beam ion source 108 may be implemented utilizing other technology.

The power equipment 114 may include one or more of high voltage power supplies, a high current filament supply, an alternating current (AC) power distribution, a process gas manifold, an EtherCAT (Ethernet for Control Automation Technology) PLC (Programmable logic controller) control, a dedicated safety circuit, and/or the like. The power equipment 114 may be configured and/or implemented as a 60 K fully contained electrical enclosure. The power equipment 114 may be configured and/or implemented to utilize other levels of voltage as well.

The treatment system 400 may be implemented as an implant down in line treatment system. Moreover, the treatment system 400 may be configured for PVD (physical vapor deposition) sputter. Additionally or alternatively, the treatment system 400 may be configured with ion beam assist. In particular aspects, the treatment system 400 may be configured with ion beam assist with a 200 mm source. In this regard, the treatment system 400 may be implemented as a glass manufacturing system, a solar application manufacturing system, an LED application manufacturing system, a display application manufacturing system, an automotive part manufacturing system, and/or the like. The treatment system 400 may further include various systems for receiving partially manufactured components or products including one or more of robotic systems, conveyor systems, and/or the like. The treatment system 400 may further include various systems for delivering partially manufactured components or products including one or more of robotic systems, conveyor systems, and/or the like.

The support structure 154 may include a number of components to elevate the various components of the treatment system 400. In particular, the support structure 154 may elevate the processing chamber 152 and the ribbon beam ion source 108. Additionally, the support structure 154 may support and elevate various other components of the treatment system 400 described in further detail below. The support structure 154 may include various horizontal structures that may be parallel to the X-Z plane as illustrated and various vertical structures that may be arranged parallel to the X-Y plane as illustrated forming a sturdy structure to support the various components of the treatment system 400. Additionally, the support structure 154 may support the treatment system 400 in connection with the various systems for receiving partially manufactured components or products including one or more of robotic systems, conveyor systems, and/or the like. Moreover, the support structure 154 may support the treatment system 400 in connection with the various systems for delivering partially manufactured components or products including one or more of robotic systems, conveyor systems, and/or the like.

As noted in FIGS. 1-3, Cartesian coordinate axes (X, Y, and Z axes) are illustrated in the drawings simply to identify and describe an exemplary relative arrangement and relative orientation of the components of the treatment system 400.

However, the Cartesian coordinate axes illustrated in FIGS. 1-3 may not correspond to the Cartesian coordinate axes (X1, Y1, and Z1 axes) illustrated FIGS. 4-12.

FIG. 2A illustrates a side view of a glass surface treatment system according to the disclosure.

FIG. 2B illustrates an end view of the glass surface treatment system according to FIG. 2A.

FIG. 2C illustrates a perspective view of the glass surface treatment system according to FIG. 2A.

FIG. 2D illustrates another end view of the glass surface treatment system according to FIG. 2A.

FIG. 2E illustrates another side view of the glass surface treatment system according to FIG. 2A.

FIG. 2F illustrates another side view of the glass surface treatment system according to FIG. 2A.

FIG. 2G illustrates a schematic of the glass surface treatment system according to FIG. 2A.

The various aspects illustrated FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2D, FIG. 2E, FIG. 2F, and FIG. 2G and described herein may include any one or more aspects, components, and/or the like as described herein. In particular, FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2D, FIG. 2E, FIG. 2F, and FIG. 2G illustrate the treatment system 400 that may include a temperature control system 122, a gas cushion system 104, a glass movement system 106, the ribbon beam ion source 108, a system controller 130, a heatsink 126, and/or the like. As described herein, the treatment system 400 in conjunction with the ribbon beam ion source 108 and/or the system controller 130 may be configured and/or implemented to modify a portion of a product.

In one aspect, the treatment system 400 in conjunction with the ribbon beam ion source 108 and/or the system controller 130 may be configured and/or implemented to modify an unmodified portion of a product to have a modified portion. In aspects, the product may move through the treatment system 400 along a processing path 188 is illustrated by FIG. 2A and FIG. 2C while modifying the product to have the modified portion. In one aspect, the treatment system 400 in conjunction with the ribbon beam ion source 108 and/or the system controller 130 may be configured and/or implemented to modify an unmodified portion 192 of glass 190 to have a modified portion 194. In aspects, the glass 190 may move through the treatment system 400 along the processing path 188 while modifying the glass 190 to have the modified portion 194.

In this regard, the treatment system 400 implementing the ribbon beam ion source 108 and/or the system controller 130 may be configured and/or implemented to generate ions and direct the ions into the glass 190 such that ion implantation can be used to alter the physical properties of a surface of the glass 190 to induce an anti-reflection (AR) effect to create the modified portion 194 on a surface of the glass 190. More specifically, the modified portion 194 may exhibit the AR effect that may be incorporated into the glass 190 itself, resulting in a robust, graded-index AR interface. In aspects, the glass 190 having the modified portion 194 may be utilized in solar applications, LED applications, display applications, automotive applications, and/or the like. Additionally, the treatment system 400 implementing the ribbon beam ion source 108 and/or the system controller 130 may be configured and/or implemented for surface treatment of the glass 190 to have the modified portion 194 in a high-volume manufacturing environment.

The ribbon beam ion source 108 may be implemented by a single implementation of the ribbon beam ion source 108 as illustrated in FIG. 2E. In other aspects, the ribbon beam ion source 108 may include a plurality of implementations of the ribbon beam ion source 108 along the X axis and/or the processing path 188 (not shown). Additionally, a plurality of implementations of one or more of the heatsink 126, the temperature control system 122, the gas cushion system 104, the glass movement system 106, and/or the like may likewise be implemented along the X axis and/or the processing path 188 in the treatment system 400 to provide serial processing of the glass 190 or other product (not shown). Additionally or alternatively, the ribbon beam ion source 108 may include a plurality of implementations of the ribbon beam ion source 108 along the Z axis. Additionally, a plurality of implementations of one or more of the heatsink 126, the temperature control system 122, the gas cushion system 104, the glass movement system 106, and/or the like may likewise be implemented along the Z axis in the treatment system 400 to provide parallel processing of the glass 190 or other product.

In aspects, the temperature control system 122 may be configured to control the temperature of the glass 190 during the ion implantation by the ribbon beam ion source 108. In this regard, a bombardment of the glass 190 or other products by highly energetic ions from the ribbon beam ion source 108 to form the modified portion 194 may cause substantial heating of the glass 190 or other products. In particular, implementation of the treatment system 400 implementing the ribbon beam ion source 108 may result in the glass 190 reaching temperatures that can cause breakage, warping, melting, and/or the like. The temperature control system 122 may be a device or system to provide a desired temperature-controlled environment for the treatment system 400 for processing the glass 190 or other product. The temperature control system 122 may include one or more of a water-cooled plate, a cold plate, a cooling device, a heatsink, a heat exchanger, a heat spreader, a heat transfer device, a heat reservoir, a component having high thermal conductivity, a component with fin structures, a thermal interface, and/or the like.

The temperature control system 122 may include a cooling device, a cooling device controller, a temperature sensor, and/or the like. The temperature control system 122 may utilize a heatsink 126, for example a water-cooled plate, for energy removal from the glass 190 so that a glass temperature can be controlled during the process to form the modified portion 194. In aspects, the temperature control system 122 may utilize the heatsink 126, for example a water-cooled plate, a cold plate, and/or the like, that may include a high emissivity coating adjacent to a backside of the glass 190, which may be configured to not physically touch the glass 190. The cooling device controller may be implemented in part by the system controller 130 and may be responsive to the temperature sensor to control the cooling device and/or the temperature control system 122. The heatsink 126 and/or the temperature control system 122 may include a water source, a pump, and conduits connecting the water source to the pump configured to implement the water-cooled plate implementation of the heatsink 126, and/or the like. Additionally, the heatsink 126 may utilize other coolants. In particular aspects, the temperature control system 122 may be controlled by the system controller 130.

In aspects, the system controller 130 may be implemented as a single device or the system controller 130 may be implemented as a plurality of distributed devices. In aspects, the system controller 130 may implement one or more modules. More specifically, with reference to FIG. 2G, the system controller 130 may monitor one or more sensors 164 configured to measure various physical characteristics including voltage, current, power, temperature, pressure, flow, mass, optical reflectance, movement, location, and/or the like of the gas cushion system 104, the ribbon beam ion source 108, the temperature control system 122, the heatsink 126, the glass movement system 106, other components of the treatment system 400 as illustrated, and/or the like. Additionally, the system controller 130 may utilize signals from the one or more sensors 164 as feedback for subsequent control of the gas cushion system 104, the ribbon beam ion source 108, the temperature control system 122, the heatsink 126, the glass movement system 106, other components of the treatment system 400 as illustrated, and/or the like. In a particular aspect, the system controller 130 may control the temperature control system 122 based on the various physical characteristics measured by the one or more sensors 164 located to measure a temperature of the glass 190, the temperature control system 122, and/or the like. In a particular aspect, the system controller 130 may control the ribbon beam ion source 108 based on the various physical characteristics measured by the one or more sensors 164 located to measure optical reflectance of the glass 190, the temperature control system 122, other components of the treatment system 400 as illustrated, and/or the like. Accordingly, the system controller 130 may control the components of the treatment system 400 based on the various physical characteristics measured by the one or more sensors 164 located throughout the treatment system 400.

Additionally, the treatment system 400 may include the gas cushion system 104. In aspects, the temperature control system 122 may address the heating problem by replacing a roller transport system used in typical glass processing equipment with the gas cushion system 104, which may be implemented as a gas cushion transport system. In this regard, as illustrated in FIG. 2A and FIG. 2B, the gas cushion system 104 and/or the temperature control system 122 may be additionally, and/or alternatively be implemented with one or more gas injection ports 118 that may be configured to flow an inert gas, such as one of the noble gases, hydrogen, nitrogen, and/or the like to create a cushion of gas in a gap 120 between the glass 190 and the temperature control system 122 and/or the heatsink 126. The presence of the gas in the gap 120 may enhance the energy removal from the glass by providing gas conduction heat removal, radiative heat removal, and/or the like. In one aspect, the one or more gas injection ports 118 may be configured to flow the gas in the processing path 188 to assist in movement of the glass 190 through the treatment system 400.

In particular aspects, the gas cushion system 104 and/or the one or more gas injection ports 118 may be controlled by the system controller 130. More specifically, the system controller 130 may monitor the one or more sensors 164 configured to measure various physical characteristics including voltage, current, power, temperature, pressure, flow, mass, optical reflectance, movement, location, and/or the like of the gas cushion system 104, the ribbon beam ion source 108, the temperature control system 122, the heatsink 126, the glass movement system 106, and/or the like. In one aspect, the system controller 130 may control the gas cushion system 104 and/or the one or more gas injection ports 118 based on the various physical characteristics measured by the one or more sensors 164 including a flow rate of the gas through the one or more gas injection ports 118 and/or the gas cushion system 104, a temperature of the glass 190, the heatsink 126, the temperature control system 122, and/or the like. Accordingly, the system controller 130 may control the gas cushion system 104 and/or the one or more gas injection ports 118 based on the various physical characteristics measured by the one or more sensors 164 located throughout the treatment system 400.

With reference to FIG. 2D, the temperature control system 122, which may implement the cooling plate, may have a border 182 that touches the glass to aid in trapping the gas from the one or more gas injection ports 118, the glass movement system 106, and/or the like, achieving a higher pressure in the gap 120, such as a plate gap and/or a glass gap between the heatsink 126, the temperature control system 122, and/or the glass 190. Moreover, the gas cushion system 104 may implement a higher pressure, which may be beneficial to enhance heat removal rates. The border 182 of the temperature control system 122 may be configured with a non-marring material such as a solid fluorocarbon, a brush, a fabric, and/or the like.

In aspects, the gas cushion system 104 may be solely implemented for transport of the glass 190. In aspects, the gas cushion system 104 may not provide any transport of the glass 190. In aspects, the gas cushion system 104 may provide limited transport of the glass 190.

In aspects with reference to FIG. 2E, the glass movement system 106 may be implemented by a roller system 150 while the temperature control system 122, such as a cooled plate, is implemented. In particular, the temperature control system 122 and/or the heatsink 126 may be arranged between the roller system 150 of the glass movement system 106. The roller system 150 may include one or more rollers, one or more drive devices, such as motors, for rotating the one or more rollers, a controller to control the roller system 150 and the one or more rollers, and/or the like.

In particular aspects, the roller system 150 may be controlled by the system controller 130. More specifically, the system controller 130 may monitor the one or more sensors 164 configured to measure various physical characteristics including voltage, current, power, temperature, pressure, flow, mass, optical reflectance, movement, location, and/or the like of the gas cushion system 104, the ribbon beam ion source 108, the temperature control system 122, the heatsink 126, the glass movement system 106, and/or the like. In particular aspects, the system controller 130 may monitor the one or more sensors 164 configured to measure various physical characteristics including a movement and/or a speed of the roller system 150 and/or the glass 190, a location of the glass 190, and/or the like in the treatment system 400 and/or the like. Accordingly, the system controller 130 may control the roller system 150 based on the various physical characteristics measured by the one or more sensors 164 located throughout the treatment system 400.

Referring back to FIG. 2A, the gas cushion system 104 may be configured and/or implemented to provide a gas to the treatment system 400 such as the processing chamber 152 of the treatment system 400. In aspects, the gas cushion system 104 may be configured and/or implemented to provide a gas pressure, through for example the one or more gas injection ports 118, between the temperature control system 122, such as the cooled plate, and the glass 190 that may be higher than a chamber pressure of the processing chamber 152 of the treatment system 400. For example, the gas cushion system 104 may implement a gas pressure of greater than or equal to a pressure of 1 torr in certain applications to ensure effective heat removal from the glass 190 being processed by the treatment system 400. In aspects, the gas cushion system 104 may implement the gas, which may be any gas. However, in aspects, the gas cushion system 104 may implement the gas as a non-reactive gas that may be effectively pumped, has high heat capacity, and/or the like. The gas cushion system 104 may include a gas source, a pump for pressurizing the gas from the gas source, one or more conduits connecting one or more of the pump, the gas source, the one or more gas injection ports 118, a gas collection system, one or more valves, and/or the like.

The ribbon beam ion source 108 may include a controller to control an ion beam of the ribbon beam ion source 108 and may be implemented as the system controller 130. In particular, the system controller 130 may control a divergence of the ion beam of the ribbon beam ion source 108. In particular, the system controller 130 may control a divergence of the ion beam of the ribbon beam ion source 108 such that the ion beam may achieve a maximum energy but spreads the energy over a larger area on the glass 190 to prevent localized extremes of heating. In other words, the system controller 130 may control the ribbon beam ion source 108 to generate the modified portion 194 in the glass 190 yet avoid and/or reduce breakage, warping, melting, and/or the like of the glass 190.

In further aspects, the system controller 130 may control the ribbon beam ion source 108 to control one or more of a divergence of an ion beam, change a length of an ion beam, plasma conditions, an ion implant density, an ion implant depth, an ion beam breadth, an ion energy, an ion current, an ion power, an ion distribution, an implantation axis, an ion acceleration voltage, an ion dose, an atomic concentration of ions, an implant thickness, and/or the like of the ion beam of the ribbon beam ion source 108. More specifically, the system controller 130 may monitor the one or more sensors 164 configured to measure various physical characteristics including voltage, current, power, temperature, pressure, flow, mass, optical reflectance, movement, location, and/or the like of the gas cushion system 104, the ribbon beam ion source 108, the temperature control system 122, the heatsink 126, the glass movement system 106, and/or the like. Accordingly, the system controller 130 may control the ribbon beam ion source 108 based on the various physical characteristics measured by the one or more sensors 164 located throughout the treatment system 400. Additionally, the system controller 130 may control the ribbon beam ion source 108 utilizing various process protocols, process times, and/or the like by utilizing an on-board script processor. The system controller 130 may allow user-defined on-board script execution for controlling process sequencing, process flow, decision making, and/or the like of the ribbon beam ion source 108.

Additionally, the system controller 130 may control a positioning of the ribbon beam ion source 108, such as a distance from the glass 190, a height of the ribbon beam ion source 108 over the glass 190, and/or the like. In this regard, the system controller 130 may control a positioning of the ribbon beam ion source 108, which may be a dimension orthogonal to a beam length. In particular aspects, the system controller 130 may control a positioning of the ribbon beam ion source 108 to be varied based on process conditions, a design of an extraction electrode assembly of the ribbon beam ion source 108, a desired glass modification of the glass 190, a particular application, and/or the like. In typical ion beam sources, a beam divergence is minimized. However, the system controller 130 may be configured and/or implemented to control the ribbon beam ion source 108 for certain applications to have a longer and/or taller beam resulting in an overall lower density of energy per unit area of the glass 190 or other processed product.

With reference to FIG. 2F, the ribbon beam ion source 108 may be operably connected to a positioning assembly 134. The positioning assembly 134 may be configured to translate the ribbon beam ion source 108 relative to the glass 190 along one, two, or three directional axes that are each orthogonal to any of the other axes. In some aspects, the positioning assembly 134 may be configured to rotate the ribbon beam ion source 108 about the one, two, or three directional axes. The positioning assembly 134 can include a carriage, a gantry, guide rails, a drive coupled to independently controllable motors (not shown) in a known manner, and/or the like. The positioning assembly 134 may be configured to move the ribbon beam ion source 108 with respect to the glass 190. Movement of the ribbon beam ion source 108 may align the ribbon beam ion source 108 with the glass 190 based on a desired orientation. Moreover, the positioning assembly 134 may be configured to position the ribbon beam ion source 108 to change a length of an ion beam, for example have a taller beam, a longer beam, and/or the like.

In further aspects, the system controller 130 may control the positioning assembly 134. More specifically, the system controller 130 may monitor the one or more sensors 164 configured to measure various physical characteristics including voltage, current, power, temperature, pressure, flow, mass, optical reflectance, movement, location, and/or the like of the gas cushion system 104, the ribbon beam ion source 108, the temperature control system 122, the heatsink 126, the glass movement system 106, and/or the like. In one aspect, the system controller 130 may monitor the one or more sensors 164 configured to measure various physical characteristics including movement, location, and/or the like of the ribbon beam ion source 108, the positioning assembly 134, and/or the like. Accordingly, the system controller 130 may control the positioning assembly 134 based on the various physical characteristics measured by the one or more sensors 164 located throughout the treatment system 400. Additionally, the system controller 130 may control the ribbon beam ion source 108 and/or the positioning assembly 134 utilizing various process protocols, process times, and/or the like by utilizing an on-board script processor. The system controller 130 may allow user-defined on-board script execution for controlling process sequencing, process flow, decision making, and/or the like of the positioning assembly 134.

The system controller 130 may configured and/or implemented as an ion beam control system. The ion beam control system may be configured to control a divergence of an ion beam, change a length of an ion beam, plasma conditions, an ion implant density, an ion implant depth, an ion beam breadth, an ion energy, an ion current, an ion power, an ion distribution, an implantation axis, an ion acceleration voltage, an ion dose, an atomic concentration of ions, an implant thickness, and/or the like of the ribbon beam ion source 108. In particular aspects, the ion beam control system may be configured to control an ion implant density, an ion implant depth, and/or the like of the ribbon beam ion source 108 to control an effectiveness of the anti-reflective treatment to achieve a gradation of the index of refraction from the gas/glass interface down to the limit of the implant.

More specifically, the system controller 130 may monitor the one or more sensors 164 configured to measure various physical characteristics including voltage, current, power, temperature, pressure, flow, mass, optical reflectance, movement, location, and/or the like of the gas cushion system 104, the ribbon beam ion source 108, the temperature control system 122, the heatsink 126, the glass movement system 106, and/or the like. Accordingly, the system controller 130 may control the ribbon beam ion source 108 based on the various physical characteristics measured by the one or more sensors 164 located throughout the treatment system 400 to control a divergence of an ion beam, change a length of an ion beam, plasma conditions, an ion implant density, an ion implant depth, an ion beam breadth, an ion energy, an ion current, an ion power, an ion distribution, an implantation axis, an ion acceleration voltage, an ion dose, an atomic concentration of ions, an implant thickness, and/or the like of the ribbon beam ion source 108.

The system controller 130 implementing ion beam control system may be configured to adjust plasma conditions in the ribbon beam ion source 108. In aspects, the system controller 130 implementing the ion beam control system may be configured to operate in conjunction with the ribbon beam ion source 108 to utilize multiply-charged ions that may be accelerated to greater energies and, therefore, be implanted to greater depths in the glass 190 than singly charged ions. Implementation of this aspect may result in a graded index effect of the glass 190 as desired for certain applications. In other aspects, the system controller 130 implementing the ion beam control system may be configured control the ribbon beam ion source 108 to utilize singly charged ions for certain other applications.

In particular aspects, the system controller 130 may control the ribbon beam ion source 108 utilizing various process protocols, process times, and/or the like by utilizing an on-board script processor for controlling process sequencing, process flow, decision making, and/or the like of the ribbon beam ion source 108 to adjust plasma conditions, to utilize multiply-charged ions, to modify implant depth, to utilize singly charged ions, and/or the like. Additionally, the system controller 130 may control the ribbon beam ion source 108 based on the various physical characteristics measured by the one or more sensors 164 located throughout the treatment system 400 to adjust plasma conditions, to utilize multiply-charged ions, to modify implant depth, to utilize singly charged ions, and/or the like.

In aspects with reference to FIG. 2F, the treatment system 400 may implement a gas system 156 to implement use of a single gas or a gas mixture, such as one or more of nitrogen, argon, other noble gases, and/or the like to provide a variable depth implant of the ions by the ribbon beam ion source 108. The gas system 156 may include a gas source, a pump for pressurizing the gas from the gas source, one or more conduits connecting one or more of the pump, the gas source, a gas collection system, one or more valves, and/or the like. In aspects, the variable depth implant of the ions may generate a graded index structure in the glass 190.

In particular aspects, the system controller 130 may control the gas system 156 utilizing various process protocols, process times, and/or the like by utilizing an on-board script processor for controlling process sequencing, process flow, decision making, and/or the like of the ribbon beam ion source 108 to control various aspects of the gas system 156. Additionally, the system controller 130 may control the ribbon beam ion source 108 based on the various physical characteristics measured by the one or more sensors 164 located throughout the treatment system 400 to control the gas system 156 and/or associated components of the gas system 156 including the gas source, the pump for pressurizing the gas from the gas source, one or more conduits connecting one or more of the pump, the gas source, a gas collection system, one or more valves, and/or the like.

Additionally, the treatment system 400 may be configured as a system that may implement a process configured and/or implemented in conjunction with the ribbon beam ion source 108 to create a nano-textured surface on the glass 190 to, for example, enhance cleanability. In particular aspects, the system controller 130 may control the ribbon beam ion source 108 and/or the treatment system 400 based on the various physical characteristics measured by the one or more sensors 164 located throughout the treatment system 400 to create a nano-textured surface on the glass 190 to enhance cleanability.

Moreover, the treatment system 400 may be configured as a system that may implement a process to tune or otherwise adjust process conditions of the ribbon beam ion source 108 and/or other components of the treatment system 400 to result in a graded index of refraction in the glass 190 due to the presence of single and multiple-charged ions. In particular aspects, the system controller 130 may tune the ribbon beam ion source 108 utilizing various process protocols, process times, and/or the like by utilizing an on-board script processor for controlling process sequencing, process flow, decision making, and/or the like of the ribbon beam ion source 108 to tune or otherwise adjust process conditions of the ribbon beam ion source 108 including tuning a divergence of an ion beam, change a length of an ion beam, plasma conditions, an ion implant density, an ion implant depth, an ion beam breadth, an ion energy, an ion current, an ion power, an ion distribution, an implantation axis, an ion acceleration voltage, an ion dose, an atomic concentration of ions, an implant thickness, and/or the like.

Furthermore, the treatment system 400 may be configured as a system that may implement a process utilizing the ribbon beam ion source 108 configured and/or implemented to be a linearly scalable ion beam source capable of high ion currents and narrow beam outputs controllable from 100 eV up to 60 keV. Additionally, the treatment system 400 may be configured as a system that may implement a process configured and/or implemented to enable cost effective ion beam treatments utilizing the ribbon beam ion source 108 for high-throughput industrial processes. In this regard, the disclosure includes exemplary implementations of the ribbon beam ion source 108 with reference to FIGS. 4-12 and the associated description thereof that in combination with the various components of the treatment system 400 as described herein may be implemented as a linearly scalable ion beam source capable of high ion currents, narrow beam outputs controllable from 100 eV up to 60 keV, and/or the like and further may enable cost effective ion beam treatments utilizing the ribbon beam ion source 108 for high-throughput industrial processes, and/or the like.

In further aspects, the treatment system 400 may be configured as a system that may implement and/or configure the ribbon beam ion source 108 to be linear scalable to any arbitrary treatment width of the glass 190 and/or other product. With reference to FIG. 2C, the ribbon beam ion source 108 may be linear scalable to a treatment width 160 of the glass 190 and/or other product of 0 inches-20 inches, 0 inches-40 inches, 0 inches-60 inches, 0 inches-80 inches, 0 inches-100 inches, 0 inches-120 inches, 0 inches-160 inches, 0 inches-200 inches, or more. Moreover, the treatment system 400 may be configured as a system that may implement a process in conjunction with the ribbon beam ion source 108 to have a beam shape tunable to as narrow as 2° divergence. In this regard, the disclosure includes exemplary implementations of the ribbon beam ion source 108 with reference to FIGS. 4-12 and the associated description thereof that in combination with the various components of the treatment system 400 as described herein may be configured to be linear scalable to any arbitrary treatment width of the glass 190 and/or other product, have a beam shape tunable to as narrow as 2° divergence, and/or the like.

Additionally, the treatment system 400 may be configured as a system that may implement a process in conjunction with the ribbon beam ion source 108 to have ion currents up to 30 mA/cm². Furthermore, the treatment system 400 may be configured as a system that may implement a process in conjunction with the ribbon beam ion source 108 to implement ion energy output from 100 eV up to and exceeding 60 keV. Additionally, the treatment system 400 may be configured as a system that may implement the ribbon beam ion source 108 to have a single slit architecture, single slot architecture, single exit aperture, and/or the like that may enable cost effective implementation and/or processing of the glass 190. The combination of linear scalability and high ion flux of the ribbon beam ion source 108 may support large area and high productivity ion-assisted, ion-milling, ion-implantation, and/or the like applications. In this regard, the disclosure includes exemplary implementations of the ribbon beam ion source 108 with reference to FIGS. 4-12 and the associated description thereof that in combination with the various components of the treatment system 400 as described herein may have ion currents up to 30 mA/cm², may implement ion energy output from 100 eV up to and exceeding 60 keV, may implement a single slit architecture, a single slot architecture, a single exit aperture architecture, and/or the like that may enable cost effective implementation and/or processing of the glass 190, may implement a combination of linear scalability and high ion flux to support large area and high productivity ion-assisted, ion-milling, ion-implantation, and/or the like applications.

In further aspects, the treatment system 400 and/or the ribbon beam ion source 108 may be configured and/or implemented utilizing a simple filament that may be used to provide electron generation through thermionic emission. Additionally, the treatment system 400 and/or the ribbon beam ion source 108 may be configured and/or implemented with a triode electrode design that may provide ion extraction, suppression and ground to generate a neutral beam. Moreover, the treatment system 400 and/or the ribbon beam ion source 108 may be configured and/or implemented with a single slit architecture, single slot architecture, a single exit aperture architecture, and/or the like that may enable high ion fluxes and simplified alignment. Additionally, the treatment system 400 may be configured and/or implemented with a magnetic plasma confinement that may allow for arbitrary beam length. In this regard, the disclosure includes exemplary implementations of the ribbon beam ion source 108 with reference to FIGS. 4-12 and the associated description thereof that in combination with the various components of the treatment system 400 as described herein may be configured and/or implemented utilizing a simple filament that may be used to provide electron generation through thermionic emission, a triode electrode design that may provide ion extraction, suppression and ground to generate a neutral beam, a single slit architecture, a single slot architecture, a single exit aperture architecture, and/or the like that may enable high ion fluxes and simplified alignment, a magnetic plasma confinement that may allow for arbitrary beam length, and/or the like.

In further aspects, the treatment system 400 may be configured as a system that may implement a process in conjunction with the ribbon beam ion source 108 configured and/or implemented with a wide process window and many potential applications. In particular, the treatment system 400 may be configured as a system that may implement a process in conjunction with the ribbon beam ion source 108 that may be configured and/or implemented at 100 eV to 300 eV to support ion assisted deposition applications like thin Ag for low-E windows, Diamond-Like Carbon (DLC) coatings, transparent conductive oxides, surface activation, and/or the like. Additionally, the treatment system 400 may be configured as a system that may implement a process in conjunction with the ribbon beam ion source 108 that may be configured and/or implemented at 300 eV to 10 keV that may support ion milling and/or ion etching for large format substrates, cutting tools, linear ion beam sputter deposition, and/or the like.

In this regard, the disclosure includes exemplary implementations of the ribbon beam ion source 108 with reference to FIGS. 4-12 and the associated description thereof that in combination with the various components of the treatment system 400 as described herein may be configured and/or implemented with a wide process window and many potential applications, configured and/or implemented at 100 eV to 300 eV to support ion assisted deposition applications like thin Ag for low-E windows, Diamond-Like Carbon (DLC) coatings, transparent conductive oxides, surface activation, and/or the like, configured and/or implemented at 300 eV to 10 keV that may support ion milling and/or ion etching for large format substrates, cutting tools, linear ion beam sputter deposition, and/or the like.

Moreover, the treatment system 400 may be configured as a system that may implement a process in conjunction with the ribbon beam ion source 108 that may be configured and/or implemented at up to 60 keV that may support ion implantation applications such as anti-reflection treatments, surface nitriding, and/or the like. Additionally, the treatment system 400 may be configured as a system that may implement a process in conjunction with the ribbon beam ion source 108 that may be configured and/or implemented to operate, regardless of the specific ion energy, with a source that may be scalable to large area and high productivity. In this regard, the disclosure includes exemplary implementations of the ribbon beam ion source 108 with reference to FIGS. 4-12 and the associated description thereof that in combination with the various components of the treatment system 400 as described herein may be configured and/or implemented at up to 60 keV that may support ion implantation applications such as anti-reflection treatments, surface nitriding, and/or the like, operate, regardless of the specific ion energy, with a source that may be scalable to large area and high productivity, and/or the like.

FIG. 3A illustrates an exemplary processing device that may be utilized at least in part for the processes according to the disclosure.

The various aspects illustrated in FIG. 3A and described herein may include any one or more aspects, components, and/or the like as described herein. In particular, FIG. 3A illustrates an exemplary implementation of the system controller 130 for use with various aspects of the disclosure including the treatment system 400. The system controller 130 may be implemented, may be controlled, may control, and/or the like in conjunction with other dedicated hardware in the treatment system 400. The system controller 130 may be implemented, may be controlled, may control, and/or the like in conjunction with the treatment system 400 and other computing devices as defined herein, and/or the like.

The system controller 130 may include one or more of a processor 552, a power supply 554, a memory 556, a display 568, a read-only memory 572, an input device 564, an input/output device 562, an analog-to-digital converter 560, a digital to analog converter 570, a clock 558, the one or more sensors 164, a power source 594, and/or the like.

The processor 552 may be configured to process at least in part a modification process 600, which may be implemented as a glass modification process. The one or more sensors 164 may measure various physical characteristics including voltage, current, power, temperature, pressure, flow, mass, optical reflectance, movement, location, and/or the like. More specifically, the one or more sensors 164 may measure various physical characteristics of components within the treatment system 400. In particular, the one or more sensors 164 may be implemented as one or more temperature sensors to measure a temperature of the ribbon beam ion source 108, the glass movement system 106, the gas cushion system 104, the ribbon beam ion source 108, the power equipment 114, the glass 190, a component of the treatment system 400, and/or the like. The one or more temperature sensors may be implemented as a Negative Temperature Coefficient (NTC) thermistor, a Resistance Temperature Detector (RTD), a thermocouple, a semiconductor-based sensor, and/or the like.

The one or more sensors 164 may measure various physical characteristics including voltage, current, power, and/or the like of the ribbon beam ion source 108, the glass movement system 106, the roller system 150, the temperature control system 122. For example, the one or more sensors 164 may measure various physical characteristics including pressure, a flow, and/or the like of the gas cushion system 104, the one or more gas injection ports 118, and/or the like. Thereafter, the system controller 130 may control the gas cushion system 104, the one or more gas injection ports 118, and/or the like based on pressure, a flow, and/or the like of the gas cushion system 104, the one or more gas injection ports 118, and/or the like. The one or more sensors 164 may measure various physical characteristics including optical reflectance, movement, location, and/or the like of the glass 190. In particular, the optical reflectance may be indicative of a physical nature of the modified portion 194 of the glass 190. Thereafter, the system controller 130 may control the ribbon beam ion source 108, the gas cushion system 104, the glass movement system 106, the roller system 150, and/or the like based the optical reflectance. For example, the system controller 130 may control the ribbon beam ion source 108, the gas cushion system 104, the glass movement system 106, the roller system 150, and/or the like based the optical reflectance of the modified portion 194 of the glass 190 to ensure the modified portion 194 exhibits the desired physical characteristics.

The system controller 130 may implement instrument integration, communication, process protocols, process time, and/or the like by utilizing an on-board script processor. The system controller 130 may allow user-defined on-board script execution for controlling process sequencing, process flow, decision making, and/or the like of the treatment system 400 and any of the associated components. Moreover, the system controller 130 may execute implementation of the modification process 600, and/or the like.

Additionally, the system controller 130 may implement an operating system, a touchscreen controller, a communications component, a graphics component, a contact/motion component, and/or the like to provide full functionality. In particular, the processor 552 may be configured to execute a software application configured to control the treatment system 400, the modification process 600 as described herein, and/or the like.

In one aspect, the software application may be configured to interact with the one or more sensors 164 and/or the like as described herein. In particular, the one or more sensors 164 may provide signals to the processor 552 through the analog-to-digital converter 560. Additionally, the digital to analog converter 570 in conjunction with the power source 594 may control and/or drive any component of the treatment system 400. In particular, the system controller 130 may provide signals via the digital to analog converter 570 in conjunction with the power source 594 to control the ribbon beam ion source 108, the gas cushion system 104, the glass movement system 106, the temperature control system 122, and/or the like.

The system controller 130 may implement a processing protocol that may include the modification process 600. The processing protocol may determine controls, signaling, and/or the like for delivery to the treatment system 400, the ribbon beam ion source 108, and/or the like. The system controller 130 may be configured to utilize outputs from the one or more sensors 164 in conjunction with the modification process 600.

The system controller 130, the dedicated hardware, system controller 130, the computing devices, and/or like may determine glass processing information for the glass 190 and provide the glass processing information to an output device such as the display 568, a printer, a database, an analysis system, and/or the like. In one aspect, the system controller 130, the dedicated hardware, system controller 130, the computing devices, and/or like may determine glass processing information and may store the glass processing information to the memory 556, another memory device, a database, and/or the like. Additionally, the glass processing information may be utilized by the system controller 130, the dedicated hardware, system controller 130, the computing devices, and/or the like to determine further control, feedback, and/or the like for the treatment system 400.

FIG. 3B illustrates an exemplary process in accordance with aspects of the disclosure.

The various aspects illustrated in FIG. 3B and described herein may include any one or more aspects, components, and/or the like as described herein. In particular, FIG. 3B shows an exemplary modification process (box 600) of the disclosure. In one or more aspects, the modification process (box 600) may be a glass modification process. In one or more aspects, the modification process (box 600) may be implemented by the system controller 130, the processor 552, the treatment system 400, the dedicated hardware, the computing devices, and/or the like.

In particular, it should be noted that the modification process (box 600) is merely exemplary and may be modified consistent with the various aspects disclosed herein. Moreover, the modification process (box 600) of the disclosure may include a process of manufacturing the glass 190 or other product. It should be noted that the modification process (box 600) may be performed in a different order consistent with the aspects described above. Moreover, the modification process (box 600) may be modified to have more process steps, combined process steps, or fewer process steps consistent with the various aspects disclosed herein.

The modification process (box 600) of the disclosure may include positioning the ribbon beam ion source 108 relative to the product with the positioning assembly 134 (box 602). In this regard, the positioning the ribbon beam ion source 108 relative to the product with the positioning assembly 134 (box 602) may include any one or more materials, structures, arrangements, processes, and/or the like as described herein.

For example, with reference to the description of the positioning assembly 134 described herein, the positioning the ribbon beam ion source 108 relative to the product with the positioning assembly 134 (box 602) may include operating the positioning assembly 134 to translate the ribbon beam ion source 108 relative to the product, such as the glass 190, along one, two, or three directional axes that are each orthogonal to any of the other axes. In some aspects, the positioning assembly 134 may be configured to rotate the ribbon beam ion source 108 about the one, two, or three directional axes. Additionally, the positioning the ribbon beam ion source 108 relative to the product with the positioning assembly 134 (box 602) may include any one or more materials, structures, arrangements, processes, and/or the like as described herein. The modification process (box 600) of the disclosure may include controlling the ribbon beam ion source 108 to generate ions and direct the ions into a product (box 604). In this regard, the controlling the ribbon beam ion source 108 to generate ions and direct the ions into a product (box 604) may include any one or more materials, structures, arrangements, processes, and/or the like as described herein.

For example, with reference to the description of the ribbon beam ion source 108 described herein, the controlling the ribbon beam ion source 108 to generate ions and direct the ions into a product (box 604) may include implementation of the ribbon beam ion source 108 and/or the system controller 130 to generate ions and direct the ions into the product, such as the glass 190, such that ion implantation can be used to alter the physical properties of a surface of the product. In further aspects, the system controller 130 may control the ribbon beam ion source 108 to control one or more of a divergence of an ion beam, change a length of an ion beam, plasma conditions, an ion implant density, an ion implant depth, an ion beam breadth, an ion energy, an ion current, an ion power, an ion distribution, an implantation axis, an ion acceleration voltage, an ion dose, an atomic concentration of ions, an implant thickness, and/or the like of the ion beam of the ribbon beam ion source 108.

Additionally, the controlling the ribbon beam ion source 108 to generate ions and direct the ions into a product (box 604) may include implementation of the gas system 156 to implement use of a single gas or a gas mixture, such as one or more of nitrogen, argon, other noble gases, and/or the like to provide a variable depth implant of the ions by the ribbon beam ion source 108. Additionally, the controlling the ribbon beam ion source 108 to generate ions and direct the ions into a product (box 604) may include any one or more materials, structures, arrangements, processes, and/or the like as described herein.

The modification process (box 600) of the disclosure may include controlling a temperature of the product with the temperature control system 122 (box 606). In this regard, the controlling a temperature of the product with the temperature control system 122 (box 606) may include any one or more materials, structures, arrangements, processes, and/or the like as described herein.

For example, with reference to the description of the temperature control system 122, the controlling a temperature of the product with the temperature control system 122 (box 606) may include implementing the temperature control system 122 to control the temperature of the product during the ion implantation by the ribbon beam ion source 108. Additionally, the controlling a temperature of the product with the temperature control system 122 (box 606) may include any one or more materials, structures, arrangements, processes, and/or the like as described herein.

The modification process (box 600) of the disclosure may include directing one or more gas injection ports 118 toward the product (box 608). In this regard, the directing one or more gas injection ports 118 toward the product (box 608) may include any one or more materials, structures, arrangements, processes, and/or the like as described herein.

For example, with reference to the description of the one or more gas injection ports 118, the one or more gas injection ports 118 to flow an inert gas, such as one of the noble gases, hydrogen, nitrogen, and/or the like to create a cushion of gas in a gap 120 between the product and the temperature control system 122 and/or the heatsink 126. Additionally, the directing one or more gas injection ports 118 toward the product (box 608) may include any one or more materials, structures, arrangements, processes, and/or the like as described herein.

The modification process (box 600) of the disclosure may include moving the product through the system with a product movement system (box 610). In this regard, the moving the product through the system with a product movement system (box 610) may include any one or more materials, structures, arrangements, processes, and/or the like as described herein.

For example, with reference to the description of the glass movement system 106, the moving the product through the system with a product movement system (box 610) may include implementing the glass movement system 106 utilizing the roller system 150 while the temperature control system 122, such as a cooled plate, is implemented. In particular, the temperature control system 122 and/or the heatsink 126 may be arranged between the roller system 150 of the glass movement system 106. Additionally, the moving the product through the system with a product movement system (box 610) may include any one or more materials, structures, arrangements, processes, and/or the like as described herein.