“A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors,” S. Sumie et al., Jpn. J. Appl. Phys., vol. 31, Part 1, No. 11, Nov. 1992, pp. 3575-3583. |
“Effects of ambient gas on photo-acoustic displacement measurement by laser interferometric probe,” S. Sumie et al., J. Appl. Phys., vol. 74, No. 11, Dec. 1, 1993, pp. 6530-6533. |
“Characteristics of photoacoustic displacement for silicon damaged by ion implantation,” H. Takamatsu et al., J. Appln. Phys., vol. 78, No. 3, Aug. 1, 1995, pp. 1504-1509. |
“Analysis of lattice defects induced by ion implantation with photo-acoustic displacement measurements,” S. Sumie, J. Appl. Phys., vol. 76, No. 10, Nov. 15, 1994, pp. 5681-5689. |
“Photodisplacement Measurement by Interferometric Laser Probe,” H. Takamatsu et al., Japanese Journal of Applied Physics, vol. 29, No. 12, Dec. 1990, pp. 2847-2850. |
“Photoellipsometry determination of surface Fermi level in GaAs (100),” Y. Xiong et al., J. Vac. Sci. Technol. A, vol. 11, No. 4, Jul./Aug. 1993, pp. 1075-1082. |
“Photoellipsometry: a modulation spectroscopy method applied to n-type GaAs,” Y. Xiong et al., Thin Solid Films, 234 (1993), pp. 399-401. |
“Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well,” J. Zettler et al., Physical Review B, Dec. 15, 1992, pp. 955-962. |
Ellipsometric measurement of the Kerr magnetoopic effect, H. Minden, Applied Optics, vol. 18, No. 6, Mar. 15, 1979, pp. 813-817. |
Ion Dose Monitor PA-400, Ion Implant Dose Measurement Systems, product brochure for Kobelco, Kobe Steel Ltd., 4 pages. |
International Search Report dated Aug. 4, 2000. |