This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2015-194179, filed on Sep. 17, 2015; the entire contents of which are incorporated herein by reference.
Embodiments described herein relate generally to a template, an imprint device, and a control method.
Heretofore, as the size of semiconductor devices has decreased, the pattern width thereof has decreased. As a result, the resolution of pattern transfer using light is beginning to be insufficient. Hence, in recent years, imprint technology has begun to be used as a substitute for the pattern transfer using light.
The imprint technology is a technique in which an imprint mask with an asperity pattern formed thereon is pressed onto an imprint material applied on a wafer substrate, and the imprint material is solidified in that state so as to transfer the asperity pattern of the imprint mask onto the wafer substrate to form the pattern thereon. Conventional techniques are described in, for example, Japanese Laid-open Patent Publication No. 2013-219230, Japanese Laid-open Patent Publication No. 2013-096291, Japanese Laid-open Patent Publication No. 2015-029070, and Japanese Translation of PCT International Application Publication No. 2009-536591.
The following describes in detail a template, an imprint device, and a control method according to exemplary embodiments, using the drawings.
To transfer patterns onto a wafer using a general imprint lithography technique, a template 900 is used and includes a photomask substrate 1 and an imprint mask 2 that is placed at the center of a first surface (serving as the lower surface) of the photomask substrate 1 and has mask patterns for one shot formed on the imprint mask 2, as illustrated in
When the patterns are transferred, a circular cylindrical vacuum chuck 3 sucks the upper surface of the thick portion 1a to hold the template 900, as illustrated in
While the imprinting step transfers the patterns onto the wafer 6 having a pattern forming area in which a plurality of pattern regions are formed, cases occur where one imprinting step is not sufficient to transfer the patterns onto all the pattern regions. In those cases, the wafer 6 is provided with pattern regions (hereinafter, called full imprint regions) 50 formed thereon to which patterns have been fully transferred in one imprinting step and pattern regions (hereinafter, called partial imprint regions) 51 formed thereon to which patterns have not been fully transferred in one imprinting step, as illustrated in
The patterns are transferred onto the partial imprint. regions 51, for example, by adjusting the positional relation between the wafer 6 and the template 900, and performing the imprinting step again. However, in the case of convexly deforming the template 90 by applying the pressure during the imprint to the wafer 6 as described above, the apex of the deformation is located substantially at the center of the imprint mask 2. Due to this, in the step of imprinting the partial imprint regions 51, the adjustment of the positional relation may cause the apex of the deformation to deviate from the pattern forming area of the wafer 6, in some cases. In such cases, when the imprint mask 2 is pressed onto the wafer 6, a portion other than the apex of the deformation of the imprint mask 2 may first come into contact with the wafer 6, and this may cause, for example, a step at an end of the wafer 6 or a corner of the wafer 6 to locally come into contact with the imprint mask 2 to produce a scratch or the like on the imprint mask 2. The damage of the imprint mask 2 thus produced reduces the life of the template 900, and is therefore desired to be avoided.
A method for avoiding the damage of the imprint mask 2 can be considered in which the wafer 6 is imprinted while the template 900 is inclined. Even in this case, however, the corner or like of the template 900 may come into contact with the wafer 6, so that a limitation is placed on the rotation angle for inclining the template 900. This causes a problem in that the method does not effectively work for all the partial imprint regions 51 in some cases.
In the production of semiconductor devices using the imprint technology, the same type or a different type of new patterns need to be formed on the patterns previously formed on the wafer 6, in some cases. Such a series of pattern forming steps requires high accuracy of position alignment between the new and old sets of patterns. However, the position of the imprint mask 2 provided on the template 900 includes a deviation from a design position, and the positions of the patterns formed on the wafer 6 are deviated from design positions due to the deformation of the wafer 6. Thus, the sets of patterns are difficult to be accurately aligned in position.
First-order components of positional deviations produced between the sets of patterns can be corrected, for example, by urging the side surface of the photomask substrate 1 with actuators 60 or the like from a plurality of directions, as illustrated in
Accordingly the following describes, by way of some embodiments, a template, an imprint device, and a control method that enable prevention of reduction in the life of the imprint mask 2 and the higher-order distortion correction of the imprint mask 2.
First, a template, an imprint device, and a control method according to a first embodiment will be described using some drawings. The template according to the first embodiment has a structure that deforms the photomask substrate around the imprint mask. With the imprint device including the template and the control method of the imprint device, an amount of expansion or an amount of contraction of a structure for deforming the photomask substrate is controlled so as to control the position of the apex of the imprint mask. This control enables moving of a portion of the template first coming into contact with the wafer during the imprint, and thereby can avoid corners at wafer ends from locally coming into contact with the imprint mask in the step of imprinting the partial imprint regions. As a result, the imprint mask can be prevented from being damaged, and the life of the template can be consequently prevented from decreasing.
The photomask substrate 1 is made of, for example, glass or synthetic quartz, and has the configuration in which the counterbore structure is provided at the central portion of the plate-like transparent substrate, as described above. The imprint mask 2 is placed at the center on the lower surface of the thin portion 1b of the photomask substrate 1 so as not to protrude from the thin portion 1b.
Each of the deformation members 7 is made of a member controllable in expansion or contraction, such as a thin-film like piezoelectric element (hereinafter, called a piezoelectric thin film). The deformation members are provided on the thin portion 1b that can be relatively easily deformed. The deformation members 7 are provided at places outside the circumference of the imprint mask 2 so as to surround the imprint mask 2 so as not to block light during the optical exposure. Although the deformation members 7 are provided on the upper surface of the thin portion 1b in
If the deformation members 7 are controlled so that the amounts of expansion or contraction of the individual deformation members are symmetrical with respect to the point O corresponding to the center f the imprint mask 2, the template 100 having the structure described above can be deformed so that the center of the imprint mask 2 becomes the apex P, as illustrated in
If, instead, the deformation members 7 are controlled so that the amounts of expansion or contraction of the individual deformation members 7 are asymmetrical with respect to the point O, the apex P of deformation can be formed at a location different from the center of the imprint mask 2, as illustrated in
The following describes in detail an operation during the pattern transfer according to the first embodiment using
As illustrated in
A Step S103, the controller moves the stage loaded with the wafer 6 so that the center of the imprint mask 2 is located over the center of the pattern forming area on the wafer 6. The controller subsequently controls the deformation members 7 so that the apex P of deformation coincides with the center of the imprint mask Step S104), and performs processing at Step S107.
At Step S105, the controller moves the stage so adjust the position of the wafer 6 relative to the imprint mask 2 according o the positions of the partial imprint regions serving as the targets on the wafer 6. The controller subsequently controls the deformation members 7 so that the apex P of deformation is located over the pattern forming area on the wafer 6 (Step S106), and performs the processing at Step S107.
The controller then presses the imprint mask 2 onto the wafer 6 by moving down the template 100 toward the wafer 6 (Step S107), and, in that state, irradiates the resist liquid 5 on the wafer 6 with light so as to harden the resist liquid 5 (Step S108). The controller then moves up the template 100 so as to separate the template 100 from the wafer 6 (Step S109).
The controller then determines whether the pattern transfer (imprinting) has been completed for all the pattern regions in the pattern forming area on the wafer 6 (Step S110). If so (Yes at Step S110), the controller unloads the wafer 6 from the stage (Step S111), and ends the present operation. If not (No at Step S110), the controller returns the process to Step S102, and performs the subsequent operation again.
The following describes in detail a case in which the operation during the pattern transfer illustrated in
The operation illustrated in
Then, the controller determines whether the identified positional deviation amounts of the alignment marks are within a predetermined allowable range (Step S203). If so (Yes at Step S203), the controller returns the process to the operation illustrated in
As described above, according to the first embodiment, the position of the apex P of the imprint mask 2 during the convex deformation can be controlled by controlling the deformation members 7. This control can avoid corners at ends of the wafer 6 from locally coming into contact with the imprint mask in the step of imprinting the partial imprint regions 51, and as a result, can prevent the life of the template from decreasing.
According to the first embodiment, the higher-order correction of the positional deviation between the imprint mask 2 and the pattern regions on the wafer 6 can be performed by individually controlling the deformation members 7 in the state in which the imprint mask 2 is pressed onto the wafer 6.
The following describes a template, an imprint device, and a control method according to a second embodiment, using some drawings. While the first embodiment has exemplified the case in which the deformation members 7 are provided on one of the upper and lower surfaces of the thin portion 1b of the photomask substrate 1, the second embodiment will exemplify a case in which deformation members are provided on both the upper and lower surfaces of the thin portion 1b.
As illustrated in
Each of the deformation members 8 is made of a member controllable in expansion or contraction, such as a piezoelectric thin film, in the same manner as the deformation member 7. Accordingly, the higher-order distortion correction of the imprint mask 2 can be performed without producing a curvature deformation of the template 200 by giving the deformation members 8 and 7 forming pairs with the thin portion 1b interposed therebetween the same amount of expansion or contraction. For example, as illustrated in
The position of the apex F of the imprint mask 2 during the convex deformation can be controlled in the same manner as in the first embodiment by giving the deformation members 7 and 8 forming a pair with the thin portion 1b interposed therebetween different amounts expansion or contraction from each other. This approach can avoid corners at ends of the wafer 6 from locally coming into contact with the imprint mask in the step of imprinting the partial imprint regions 51, and as a result, can prevent the life of the template from decreasing.
Other configurations, operations, and effects are the came as those of the other embodiments, so that detailed descriptions thereof are omitted here.
The following describes in detail, as a third embodiment, another configuration that enables the higher-order distortion correction of the imprint mask without producing a curvature deformation of a template, using some drawings.
As illustrated in
The individual deformation controller 307 adjusts a balance between stresses produced in the respective deformation members 7 and 8 provided on the deformation substrate 9 so as to be capable of selectively carrying out two deformation modes, including a first mode of producing a curvature deformation of the thin portion 1b of the photomask substrate 1, as illustrated in
The first mode illustrated in
The second mode illustrated in
For example, glass or synthetic quarts can be used for the material of the deformation substrate 9 in the same manner as in the case of the photomask substrate 1. In that case, the second mode can be carried out using the deformation member 8 that is bonded to both the thin portion 1b and the deformation substrate 9, by adjusting the cross-sectional shape of the deformation substrate 9 so that the thin portion 1b has substantially the same cross-sectional stiffness as that of the deformation substrate 9.
The third embodiment has the structure in which the deformation controllers 307 are pasted to the photomask substrate 1, so that the deformation controllers 307 can be removed from the template 300 that has reached the end of the life according to the number of times of imprinting, and can be reused for another template 300.
Other configurations, operations, and effects are the same as those of the other embodiments, so that detailed descriptions thereof are omitted here.
A fourth embodiment will be described by way of an example of a configuration of electrical connections of the deformation members 7 and 8 in the above described embodiments with an external circuit (such as a controller) for driving the deformation members. Although the fourth embodiment will be described using the template 300 exemplified in the third embodiment, the description can be applied to the other embodiments in the same manner.
The circular cylindrical vacuum chuck 3 holding the template 300 by sucking the thick portion 1a of the photomask substrate 1 is provided with an arm 18 projecting toward the inside of the circular cylindrical shape. Connecting parts 14 and 15 electrically connected through wiring to a controller 20 are mounted to the arm 18 using elastic members 16 and 17. As illustrated in
By having the configuration described above, the fourth embodiment allows the deformation members 7 and 8 provided on the template 300 to be easily connected to the external circuit, such as the controller 20. Other configurations, operations, and effects are the same as those of the other embodiments, so that detailed descriptions thereof are omitted here.
As described above, in the above-described embodiments, for example, piezoelectric thin films can be used as the deformation members 7 and 8 that deform the thin portion 1b of the photomask substrate 1 provided with the imprint mask 2. The piezoelectric thin films can be formed on the photomask substrate 1 and the deformation substrate 9, for example, by film forming using a semiconductor process or patterning using an inkjet system. A bulk piezoelectric thin film in a film shape can also be used as the deformation members 7 and 8. In that case, the bulk piezoelectric thin film is bonded to the photomask substrate 1 and/or the deformation substrate 9 using, for example, a detachable adhesive material, such as an adhesive agent or an adhesive sheet.
In general, a piezoelectric element has a property called hysteresis that exhibits nonlinearity in deformation in the reverse direction when the expansion and the contraction are electrically controlled. For this reason, if the piezoelectric thin films are used for the deformation members 7 and 8, the hysteresis of the deformation members 7 and 8 needs to be taken into account the curvature deformation or distortional deformation of the template is controlled. Accordingly, in the embodiments described above, correspondence relations between voltage values applied to the deformation members 7 and 8 and amounts of deformation (amounts of curvature deformation and distortional deformation) of the template at that time may be identified by experiment, simulation, or the like, and the deformation of the template may be controlled by controlling the voltages applied to the deformation members 7 and 8 based on the correspondence relations thus identified. In that case, the identified correspondence relations may be used to establish in advance a database or a control law for the control.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2015-184179 | Sep 2015 | JP | national |