Claims
- 1. A semiconductor component, comprising:
a semiconductor body having a substrate of a first conduction type and a first layer of a second conduction type located above said substrate; a channel zone of said first conduction type formed in said first layer; a first terminal zone of said second conduction type configured adjacent said channel zone; a second terminal zone of said first conduction type formed in said first layer; a plurality of compensation zones of said first conduction type formed in said first layer.
- 2. The semiconductor component according to claim 1, comprising:
a boundary zone of said first conduction type extending vertically in said first layer towards said semiconductor body.
- 3. The semiconductor component according to claim 2, wherein said boundary zone extends from said channel zone to said substrate.
- 4. The semiconductor component according to claim 2, wherein said boundary zone is laterally spaced away from said channel zone.
- 5. The semiconductor component according to claim 4, wherein:
said semiconductor body has a first surface; and said boundary zone extends from said first surface of said semiconductor body to said substrate.
- 6. The semiconductor component according to claim 1, wherein said compensation zones have a pillar-shaped design.
- 7. The semiconductor component according to claim 6, wherein at least some of said compensation zones adjoin said channel zone.
- 8. The semiconductor component according to claim 1, wherein said compensation zones have a spherical design.
- 9. The semiconductor component according to claim 1, wherein:
said compensation zones define first compensation zones; said first layer has second compensation zones of said second conduction type formed therein; and said second compensation zones are adjacent said first compensation zones.
- 10. The semiconductor component according to claim 1, wherein said boundary zone is doped more heavily than said substrate.
- 11. The semiconductor component according to claim 1, wherein:
said second terminal zone has a first section; and said second terminal zone has a second laterally extending section.
- 12. The semiconductor component according to claim 11, wherein said first section and said second section of said second terminal zone form a well-like structure enclosing said first terminal zone and at least some of said compensation zones.
- 13. The semiconductor component according to claim 1, wherein:
said second terminal zone has a first section and a second section.
- 14. The semiconductor component according to claim 13, wherein said first section and said second section of said second terminal zone form a well-like structure enclosing said first terminal zone and at least some of said compensation zones.
- 15. The semiconductor component according to claim 1, wherein said first layer has a number of dopant atoms of said first conduction type and a number of dopant atoms of said second conduction type that are approximately identical.
- 16. A semiconductor component, comprising:
a semiconductor body having a substrate of a first conduction type and a first layer of a second conduction type located above said substrate; and a boundary zone of said first conduction type, said boundary zone vertically extending to said substrate.
Priority Claims (1)
Number |
Date |
Country |
Kind |
100 52 170.3 |
Oct 2000 |
DE |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This is a continuation-in-part of U.S. application Ser. No. 10/007,397, filed Oct. 22, 2001.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
10007397 |
Oct 2001 |
US |
Child |
10704259 |
Nov 2003 |
US |