Claims
- 1. A plasma enhanced chemical vapor deposition apparatus for processing workpieces within a chamber for containing the chemical vapor and workpieces positioned in a boat assembly, comprising:
- a source of RF excitation power positioned exterior of the chamber;
- a pair of spaced electrical conductors extending from said source and into said chamber;
- an RF power transmission line extending from said conductors within said chamber to a position to be electrically connected to an electrical circuit within a boat assembly to be positioned within said chamber, said circuit including a plurality of spaced members against which the workpieces are placed when being exposed to plasma enhanced chemical vapor, the electrical impedance of said line being matched to the electrical impedance of the boat assembly circuit to optimize the effectiveness of the RF plasma generated between said members within said chamber.
- 2. The apparatus of claim 1, wherein said transmission line comprises a pair of spaced, thin, flat electrically conductive elements separated by a thin layer of an insulating material, said elements being respectively connected to said conductors and being adapted to be electrically connected to electrical connector on said boat.
- 3. The apparatus of claim 2, wherein one of said elements is narrower than the other element and is centrally positioned with respect to the other element.
- 4. The apparatus of claim 3, including a pair of thick layers of an insulating material between which said elements are sandwiched.
- 5. The apparatus of claim 4, wherein said insulating material is ceramic.
- 6. The apparatus of claim 2, wherein said insulating material is a dielectric.
- 7. The apparatus of claim 6, wherein said dielectric material is ceramic.
- 8. The apparatus as defined in claim 7, wherein said ceramic is alumina.
- 9. The apparatus as defined in claim 1, wherein said RF transmission line is formed so as to generally conform to the inner surface of said chamber.
- 10. A method of improving the deposition rate and uniformity on workpieces in a plasma enhanced chemical vapor deposition system, said deposition system including a boat assembly for holding said workpieces in said plasma, said boat assembly having a first predetermined impedance at a selected frequency, said method comprising the steps of:
- connecting an internal transmission line to said boat assembly within said deposition system, said internal transmission line having an impedance which substantially matches said first predetermined impedance of said boat assembly;
- connecting said internal transmission line to an external transmission line, said external transmission line having substantially the same first predetermined impedance as said internal transmission line at said selected frequency;
- providing an RF voltage source having an output frequency equal to said selected frequency, and having a second predetermined impedance; and
- matching said first predetermined impedance of said external transmission line and said second predetermined impedance of said RF source.
- 11. The method as defined in claim 10, wherein said matching step comprises the steps of:
- providing a match box and a match box tuner, said match box having input and output terminals, said tuner controlling the output impedance of said output terminals;
- connecting said RF source to said input terminals of said match box;
- connecting said external transmission line to said output terminals of said match box; and
- adjusting said tuner to tune said match box so that the output impedance of said output terminals is substantially equal to said first predetermined impedance.
- 12. The method as defined in claim 10, wherein said selected frequency is 13.56 megahertz.
- 13. The method as defined in claim 10, wherein said first predetermined impedance of said internal transmission line is approximately 11 ohms.
Parent Case Info
This application is a continuation of U.S. patent application Ser. No. 473,443, filed Feb. 1, 1990.
US Referenced Citations (3)
Continuations (1)
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Number |
Date |
Country |
Parent |
473443 |
Feb 1990 |
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