The invention relates to a method for closing a vent formed in a wall of a microstructure in a controlled atmosphere.
The invention also relates to the use of a machine for implementing this method.
Operation of certain components, particularly in the microelectronics field, imposes control of the environing atmosphere. This is the case for example for microdetectors (infrared microbolometers) or for certain MEMS components (RF microswitches).
For example, MEMS devices produced collectively on silicon wafers generally contain mobile elements forming electrical, mechanical or optical assemblies. These devices are in all cases fragile and fabrication thereof therefore integrates an encapsulation step the function whereof is at least to ensure mechanical protection of the sensitive parts. This encapsulation is sometimes an integral part of the device supporting electrodes, contact pads, or mechanical stops in the direction perpendicular to the plane of the wafer.
Encapsulation of the devices in a controlled atmosphere, i.e. in a vacuum or in a gaseous atmosphere, conventionally consists in forming a microstructure delineating a cavity around the device, drilling a vent in a wall of the microstructure and then reclosing the vent with a plug, after placing the device in a controlled atmosphere. As represented in
The major difficulty of this type of process lies in obtaining hermetic closing of the microstructure 3, while controlling the atmosphere inside the latter.
It has already been proposed to use a technique of metal deposition by evaporation to perform sealing of a vent (
It is also known to seal the vents by a dielectric by Plasma Enhanced Chemical Vapor Deposition (PECVD). In this case, the tightness of the microstructure is better, but the atmosphere in the microstructure cannot be controlled, as the gases formed when PECVD is performed are present in the microstructure at the time closing is performed.
There is no known deposition technique combining good tightness characteristics and control of the atmosphere. In the case of PECVD, the tightness is good, but it is not possible to control the atmosphere. When using the metal evaporation technique, the atmosphere can be controlled, but the tightness of the microstructure is not well ensured.
Moreover, the microstructure only represents very small volumes, the thickness and surface of the microstructure being very limited. This succession of steps therefore presents the drawback of having recourse to sensitive and delicate methods.
Furthermore, a plurality of microstructures to be sealed are generally disposed on the same plate, also called wafer. The microstructures therefore have to be separated to be able to encapsulate them in individual housings. It is in general at the time when encapsulation is performed that the microstructures are placed in a controlled atmosphere, via the vent which then remains open. In this case, during cutting of the wafer, the vents may have to be temporarily sealed, for example by applying a plastic film on the drilled face, to prevent any water and debris originating from sawing from getting in.
The final component encapsulated in housing therefore presents a large cost and the difficulty of the steps of creating the vacuum and of individual housing in a chip remains a problem.
It is an object of the invention to remedy these shortcomings and to provide a vent closing method that is simple and efficient and can be applied indifferently on a single microstructure or on a whole wafer equipped with a plurality of microstructures.
According to the invention, this object is achieved by the accompanying claims and more particularly by the fact that the method comprises at least the following steps:
deposition of a securing pad on the wall at the periphery of one end of the vent,
formation of a ball by melting at one end of a metal wire,
deposition of the ball on the end of the vent and on the securing pad,
deformation of the ball and ultrasonic welding onto the securing pad.
It is a further object of the invention to provide an ultrasonic welding machine for implementation of the sealing method.
Other advantages and features will become more clearly apparent from the 20 following description of particular embodiments of the invention given as non-restrictive examples only and represented in the accompanying drawings, in which:
FIGS. 5 to 10 schematically represent different steps of the vent sealing by means of an ultrasonic welding machine according to the invention.
In
The securing pad 11 is achieved by deposition of a layer of metal chosen from gold, silver, aluminium or copper. The securing pad is preferably achieved by deposition of a layer of gold by means of a mask (not represented), so as to form a preferably annular pad around the hole formed by the vent 9.
In an alternative embodiment (not represented), the vent 9 can be achieved after deposition of the metal layer designed to form the securing pad 11, for example by laser etching.
In a second step, a ball 12 is formed by melting at one end of a metal wire 13. The metal wire 13 and the ball 12 can be made from ductile metal chosen from gold, silver, aluminium or copper. Advantageously, the ball 12 and the securing pad 11 are made of the same material to facilitate subsequent hardening thereof.
The ball 12 is then deposited on the end of the vent 9 and on the securing pad 11 (
After the ball 12 has been welded (
The method described above is performed at a temperature that is preferably about 150° C., which is much lower than the melting temperature of gold, silver, aluminium and copper, in order to facilitate deformation and welding of the ball 12. Crushing the ball 12 enables a perfect contact of the ball 12 on the securing pad 11 to be obtained, with in addition a definitive mechanical junction. Sealing is therefore perfectly hermetic. Moreover, gold is the most suitable for performing this hermetic sealing function, as it is very ductile. The bond thus obtained is not only mechanical but also constitutes an electrical connection, as gold also presents a good conductivity.
If required, an additional oxidization step of the wall 10 of the microstructure 3 can be included. An oxidized layer (not shown) is then formed between the wall 10 and the securing pad 11. The oxidized layer has the function of insulating the securing pad 11 electrically from the wall 10.
The vent sealing method described above can be implemented by means of an ultrasonic welding machine, described in greater detail with regard to FIGS. 5 to 10. An ultrasonic welding machine conventionally comprises a welding electrode 14, wherethrough the metal wire 13 passes, and a working table 15.
As represented in
To implement the invention, the microstructure 3, provided with at least one vent 9 to be sealed, is placed on the working table 15 (FIGS. 7 to 10). In addition, the ends of the electrode 14 and of the metal wire 13 are placed in a chamber 17, the atmosphere whereof can be controlled. For example, a vacuum or a partial pressure of inert gas can be created in the chamber 17, after the ball 12 has been formed in the chamber 17.
The machine conventionally comprises means for moving the electrode 14 perpendicularly to the working table 15. The ball 12 can thus be deposited on the end of the vent 9 and on the securing pad 11 of the microstructure 3 supported by the working table 15. The machine also conventionally comprises means for generating ultrasounds, designed to cause a vibration of the welding electrode 14. The means for moving the electrode 14 and the means for generating ultrasounds are formed by any suitable means used in conventional ultrasonic welding machines.
In
In
In an alternative embodiment (not represented), the welding wire 13 can be used to make an electrical connection by connecting the free end of the residual wire 13 to a connection pad of an encapsulation housing, or of another component. In another alternative embodiment, the metal wire 13 can be cut at the same time as the next ball 12 is formed to achieve automation of the sealing method.
The machine can comprise means for relative movement of the microstructure 3 and of the welding electrode 14, both perpendicularly to the working table 15 and parallel thereto. For example, the microstructure 3 can be securedly affixed to the working table 15, which can be in movement with respect to the welding electrode 14. The lateral movement of the working table 15 enables the microstructures 3 to be brought one after the other to a position under the welding electrode 14, in the chamber 17. In
The method according to the invention can thus be implemented for any known ultrasonic welding machine, the complementary means required for implementation of the vent sealing method, i.e. the controlled atmosphere chamber 17 and the means for moving the microstructure 3 inside the chamber 17, being easy to install and to use.
Furthermore, whole wafers comprising a plurality of microstructures 3 can be treated, and the vents be sealed before cutting of the whole wafer is performed. Large savings in terms of cost and time are therefore possible.
The vent sealing method and the ultrasonic welding machine described above procure in particular the following advantages, i.e. good hermetic sealing of the microstructure 3, an efficient sealing method performed at low temperature and easy to implement, and a welding machine enabling the sealing method to be applied for a unitary microstructure or for a plurality of microstructures made on a full wafer before the latter is cut.
The invention is more particularly interesting when fabrication of microstructures constituting accelerometers, bolometers, and RF or power microswitches is involved.
Number | Date | Country | Kind |
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0405128 | May 2004 | FR | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/FR05/01125 | 5/3/2005 | WO | 10/23/2006 |