Number | Name | Date | Kind |
---|---|---|---|
3576549 | Hess et al. | Apr 1971 | |
3582908 | Koo et al. | Jun 1971 | |
3634929 | Yoshida et al. | Jan 1972 | |
3671948 | Cassen et al. | Jun 1972 | |
3717852 | Abbas et al. | Feb 1973 | |
3728695 | Frohman-Bentchkowsky | Apr 1973 | |
3787822 | Rioult | Jan 1974 | |
3863231 | Taylor | Jan 1975 | |
3990098 | Mastrangelo | Nov 1976 | |
4146902 | Tanimoto et al. | Mar 1979 | |
4203123 | Shanks | May 1980 | |
4203158 | Frohman-Bentchkowsky et al. | May 1980 | |
4281397 | Neal et al. | Jul 1981 | |
4419741 | Stewart et al. | Dec 1983 | |
4420766 | Kasten | Dec 1983 | |
4442507 | Roesner | Apr 1984 | |
4494135 | Moussie | Jan 1985 | |
4499557 | Holmberg et al. | Feb 1985 | |
4507757 | McElroy | Mar 1985 | |
4543594 | Mohsen et al. | Sep 1985 | |
4569121 | Lim et al. | Feb 1986 | |
4646266 | Ovshinsky et al. | Feb 1987 | |
4820657 | Hughes et al. | Apr 1989 | |
4823181 | Mohsen et al. | Apr 1989 | |
4876220 | Mohsen et al. | Oct 1989 | |
4881114 | Mohsen et al. | Nov 1989 | |
4899205 | Hamdy et al. | Feb 1990 | |
4922319 | Fukushima | May 1990 | |
4943538 | Mohsen et al. | Jul 1990 | |
5070383 | Sinar et al. | Dec 1991 | |
5311039 | Kimura et al. | May 1994 | |
5334880 | Abadeer et al. | Aug 1994 | |
5391518 | Bhushan | Feb 1995 | |
5441907 | Sung et al. | Aug 1995 | |
5463244 | De Araujo et al. | Oct 1995 | |
5536968 | Crafts et al. | Jul 1996 | |
5675547 | Koga | Oct 1997 | |
5737259 | Chang | Apr 1998 | |
5751012 | Wolstenholme et al. | May 1998 | |
5776810 | Guterman et al. | Jul 1998 | |
5835396 | Zhang | Nov 1998 | |
5883409 | Guterman et al. | Mar 1999 |
Entry |
---|
A New Programmable Cell Utilizing Insulator Breakdown, 1985, pp. 640-IEDM-85 (26.7), pp. IEDM 85-641 (26.7), 642-IEDM (26.7), IEMD Technical Digest "International Electron Devices Meeting 1985". |
Solid State Circuits, "A Fully Decoded 2048-Bit Elctrically Programmable FAMOS Read-Only Memory", "A Memory System Based On Surface-Charge Transport". |