Claims
- 1. A method of forming an interconnect structure, comprising the steps of:depositing a first low k dielectric material over a conductive layer to form a first dielectric layer; forming an etch stop layer on the first dielectric layer; etching the etch stop layer and the first dielectric layer to form a via in the first dielectric layer; depositing a second low k dielectric material in the via and over the etch stop layer to form a second dielectric layer over the via and the etch stop layer; simultaneously etching the via and a trench in the second dielectric layer, with at least a portion of the trench being directly over the via; wherein the first low k dielectric material and the second low k dielectric material are both inorganic low k dielectric materials.
- 2. The method of claim 1, wherein the first low k dielectric material and the second low k dielectric material are different inorganic low k dielectric materials.
- 3. The method of claim 1, wherein the first low k dielectric material and the second low k dielectric material are the same inorganic low k dielectric materials.
- 4. The method of claim 1, further comprising depositing conductive material simultaneously in the via and the trench.
- 5. The method of claim 4, wherein the conductive material is copper.
- 6. The method of claim 1, wherein the first and second low k dielectric materials are selected from at least one of methyl silsesquioxane (MSQ), hydrogen silsesquioxane (HSQ), and fluorine tetraethylorthosilicate (FTEOS).
RELATED APPLICATIONS
The present application contains subject matter related to subject matter disclosed in copending U.S. patent application Ser. No. 09/778,070, filed on Feb. 7, 2001, Ser. No. 09/778, 544, filed on Feb. 21, 2001, and Ser. No. 09/788,472, filed on Feb. 21, 2001.
US Referenced Citations (6)
Number |
Name |
Date |
Kind |
6001730 |
Farkas et al. |
Dec 1999 |
A |
6127258 |
Watanabe et al. |
Oct 2000 |
A |
6245670 |
Cheung et al. |
Jun 2001 |
B1 |
6252290 |
Quek et al. |
Jun 2001 |
B1 |
6259160 |
Lopatin et al. |
Jul 2001 |
B1 |
6287961 |
Liu et al. |
Sep 2001 |
B1 |