The present disclosure relates generally to electroplating. More particularly and in some embodiments, the present disclosure relates to electroplating operations that include thief electrodes.
Microelectronic devices, such as semiconductor devices, imagers, displays, storage media, and micromechanical components, are generally fabricated on and/or in microfeature wafers using a number of processes that deposit and/or remove materials from the wafers. Electroplating is one such process that deposits conductive, magnetic or electrophoretic layers on the wafers. Electroplating processes, for example, are widely used to form small copper interconnects or other very small sub-micron features in trenches and/or holes (e.g., less than 90 nm damascene copper lines). In electroplating, an electrical current is passed between the wafer, i.e., work electrode, such as a cathode, and one or more counter electrodes, such as an anode, in a manner that deposits material on a surface of the wafer.
An electrode system of an electroplating apparatus is provided that includes a working electrode having a plating surface, and a thief electrode that is separated from the working electrode, in which a face of the thief electrode that is in contact with a plating electrolyte is offset from the plating surface of the working electrode. The electrode system further includes at least one power supply in to the working electrode and the thief electrode.
In another aspect, an electroplating apparatus is provided that includes a plating tank for containing a plating electrolyte. A counter electrode, e.g., anode, is present in a first portion of the plating tank. A cathode system is present in a second portion of the plating tank. The cathode system includes a working electrode and a thief electrode. The thief electrode is present between the working electrode and the counter electrode. The thief electrode includes an exterior face that is in contact with the plating electrolyte that is offset from the plating surface of the working electrode.
In another aspect, a plating method is provided that includes providing a plating tank containing a plating electrolyte having at least one metal compound. An anode and a cathode system are positioned in an electrolyte bath. The cathode system includes a working electrode having a plating surface and a thief electrode that is separated from the working electrode. The thief electrode includes an exterior face that is in contact with the plating electrolyte and is offset from the plating surface of the working electrode. A bias is applied to the anode and the cathode system, wherein the metal compound dissociates to provide metal ions that are plated on the surface of the working electrode. The plating formed on the plating surface of the working electrode has a uniform thickness from the perimeter of the plating surface to the center of the plating surface.
The following detailed description, given by way of example and not intended to limit the invention solely thereto, will best be appreciated in conjunction with the accompanying drawings, wherein like reference numerals denote like elements and parts, in which:
Detailed embodiments of the present invention are disclosed herein; however, it is to be understood that the disclosed embodiments are merely illustrative of the invention that may be embodied in various forms. In addition, each of the examples given in connection with the various embodiments of the invention are intended to be illustrative, and not restrictive. Further, the figures are not necessarily to scale, some features may be exaggerated to show details of particular components. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting, but merely as a representative basis for teaching one skilled in the art to variously employ the present invention.
References in the specification to “one embodiment”, “an embodiment”, “an example embodiment”, etc., indicate that the embodiment described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is submitted that it is within the knowledge of one skilled in the art to affect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.
For purposes of the description hereinafter, the terms “upper”, “lower”, “right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, and derivatives thereof shall relate to the invention, as it is oriented in the drawing figures. The terms “overlying”, “atop”, “positioned on” or “positioned atop” mean that a first element, such as a first structure, is present on a second element, such as a second structure, wherein intervening elements, such as an interface structure may be present between the first element and the second element. The term “direct contact” means that a first element, such as a first structure, and a second element, such as a second structure, are connected without any intermediary conducting, insulating or semiconductor layers at the interface of the two elements.
The present disclosure is applicable to electrochemical processes requiring the application of an external field, such as plating, anodizing, electropolishing, electrochemical etching and colloidal deposition. In addition, some non-applied external field electrochemical processes may also benefit from the designs disclosed herein.
In one embodiment, an electroplating apparatus is disclosed having a thief electrode that is present about a perimeter of a working electrode, and is separated from the working electrode, in which a face of the thief electrode that is in contact with a plating electrolyte is offset from the plating surface of the working electrode. Electroplating is the process of producing a coating, usually metallic, on a surface by the action of electric current. The deposition of a metallic coating onto an object is achieved by putting a negative charge on the object to be coated and immersing it into a solution, i.e., plating electrolyte, that contains a salt of a metal to be deposited. The metallic ions of the salt carry a positive charge and are thus attracted to the object. When the metallic ions reach the negatively charged object (that is to be electroplated), it provides electrons to reduce the positively charged ions to metallic form.
It has been determined that by positioning the thief electrode to be offset from the plating surface of the working electrode that the uniformity of the plating thickness may be increased. Electroplating devices that do not include a thief electrode or include a thief electrode that is not offset from the plating surface of the working electrode have increased plating thickness at the edge, i.e., perimeter, of the working electrode. In comparison, an electroplated metal film produced by an electroplating apparatus in which the face of the thief electrode that is in contact with the plating electrolyte is offset from the plating surface of the working electrode has a uniform thickness extending across the entirety of the plating surface including the portion of the plating at the edge of the working electrode. As used herein, the term “uniform thickness” means that the uniformity of the plating has a variation of the thickness from across the deposition substrate from a first edge, i.e., at a first portion of the perimeter, across the center of the deposition substrate to an opposing second edge, i.e., at a second portion of the perimeter, of less than 5% of one sigma (one standard deviation) for the plating thickness.
The present disclosure is generally directed to batch and continuous plating tools. Batch plating is a form of plating in which the holder containing a first part, i.e., first workpiece, to be plated is positioned in a plating cell, and then once the plating is complete in that plating cell the holder is removed. Thereafter, a holder containing a second part, i.e., second workpiece, is positioned in the plating cell and the plating process is repeated. In a batch process there is no continuity between the plating process for the first part and the plating process for the second part.
Another form of plating that may employ the principles of the present disclosure is continuous plating. Continuous plating apparatus provides for plating using multiple holders each corresponding to a part to be plated, i.e., workpiece, in which each holder is traversed through a single plating tank. While each of the holders is being traversed through the plating tank, the workpiece that is being held on the holder is plated. As a first holder containing the plated workpiece is removed from the plating tank, a second holder containing a new workpiece enters the plating tank to be plated.
It has further been determined that when the thief electrode is non-planar and is large, i.e., the thief electrode has a thief electrode to plating part surface area ratio of 3:1 or greater, the necessary power that is being applied to the thief will remove at least 30% of the current that would have been applied the part to be plated if the thief electrode was not present. Non-planar denotes that the surface of the thief electrode that is contact with the plating electrolyte, and is opposite the surface that is in contact with the holder on which the thief electrode is mounted, is offset from and is not present on the same plane as the face of the plating surface on which the plating is being formed. A thief electrode that is non-planar and large requires less of a total power differential than a large thief that is co-planar to the plating surface. A large thief electrode that is non-planar with the plating surface not only removes current from the edge of the plating surface, but also removes current from across the entire plating part. But, the degree by which the current is removed across the entire plating surface is less than the amount of current that is removed in thief electrodes that are large and co-planar with the plating surface.
When the thief electrode is co-planar and small, the necessary power on the thief electrode to smooth the edge of the plating removes about 5% or less of the current that would have been applied to the plating part during the plating operation if the thief electrode was not present. In one embodiment, a small thief electrode is a thief electrode that has a ratio of thief electrode surface area to plating surface area ranging from 1:8 to 1:12. In another embodiment, a small thief electrode is a thief electrode that has a ratio of thief electrode surface area to plating surface area ratio ranging from 1:9 to 1:11. In yet another embodiment, a small thief electrode is a thief electrode that has a ratio of thief electrode surface area to plating surface area ratio of 1:10.
Referring to
The exterior face 35 of the thief electrode 20a is offset from the plating surface 4 of the working electrode 5. The exterior face 35 of the thief electrode 20a is the face of the thief electrode 20a that is opposite the face of the thief electrode 20a that is in direct contact with the holder 6 of the working electrode 5. In one embodiment, by “offset” it is meant that the exterior face 35 of the thief electrode 20a is not on the same plane as the plating surface 4 of the working electrode 5. Therefore, the exterior face 35 of the thief electrode 20a and the plating surface 4 of the working electrode 5 are not co-planar. In one embodiment, the dimension D1 that defines the degree by which the exterior face 35 of the thief electrode is offset from the plating surface 4 of the working electrode 5 ranges from 0.5 mm to 50 mm. In another embodiment, the dimension D1 defining the degree by which the exterior face 35 of the thief electrode is offset from the plating surface 4 of the working electrode 5 ranges from 1 mm to 5 mm.
In the embodiment depicted in
The thief electrode 20a is incorporated around the working electrode 5 to improve the uniformity of electrodeposited metal on the working electrode 5 and to control the profile of the deposited metal. Generally, the working electrode 5 is disposed in close proximity to the thief electrode 20a during the plating process. To prevent the thief electrode 20a from shorting to the working electrode 5, an insulating spacer is used to isolate the thief electrode 20a from the working electrode 5. Bridging of the thief electrode 20a to the working electrode 5 disadvantageously distorts the desired metal distribution profile on the working electrode 5 thus producing a defective part, and further requiring a rework operation.
The insulating spacer is typically a component of the holder 6 for the working electrode 5. As used herein, the term “insulating” means a material having a room temperature conductivity of less than about 10−10(Ω-m)−1. Examples of materials suitable for the insulating spacer include rubber, plastic, glass and ceramics. The insulating spacer is typically configured to separate the thief electrode 20a from the working electrode by a dimension ranging from 0.25 mm to 5.0 mm. In one embodiment, the insulating spacer is configured to separate the thief electrode 20a from the working electrode 5 by a dimension ranging from 0.5 mm to 3.0 mm. In yet another embodiment, the thin insulating spacer is configured to separate the thief electrode 20a from the working electrode by a dimension on the order of 1.0 mm
In one embodiment, the thief electrode 20a is typically composed of a wire mesh material. Using a mesh material as the thief electrode 20a increases the surface area of the thief electrode 20a. Typically, a mesh thief electrode 20a can be used for a longer period of time than a thief electrode 20a that is composed of a solid metal. Regular maintenance of the thief electrode 20a is done by periodic removal (deplating or electroetching) of the plated metal on the thief electrode 20a.
The wire mesh material is typically composed of stainless steel or titanium (Ti), and in some examples has a wiring diameter ranging from 0.25 mm to 1.25 mm, and a grid spacing that ranges from 1 mm to 10 mm. In one example, the wiring diameter of the wire mesh that provides the thief electrode 20a ranges from 0.5 mm to 0.75 mm, and the grid spacing ranges from 2 mm to 5 mm. The composition of the wire mesh material and its geometry is selected to allow for maximum flow while maintaining a smooth electric field. The thief electrode 20a may also be composed of a solid electrode material. The geometry of the thief electrode 20a is typically selected to conform to the geometry of the working electrode 5.
The working electrode 5 may be composed of any electrically conductive material that is to be plated. As used herein, “conductive” denotes a room temperature conductivity of greater than about 10−8(Ω-m)−1. Examples of suitable materials for the working electrode 5 include elemental elements including, but not limited to Cu, Ag, Ni, Fe, Al, Zn, Pd, platinized Ti, Co, Mo, Sn Ta, Ir, Pt, Pb, Bi, Cr, Nb, Zr, Au, SS 304, SS 316, Ti and combinations and alloys thereof. The working electrode 5 may also be composed of semiconductor materials, so long as the working electrode 5 is conductive so that it may be biased to attract positively charged metal ions from the plating electrolyte 1. The working electrode 5 may have any geometry to be plated.
The working electrode 5 is mounted to a holder 6, which supports the working electrode 5 while immersed in the plating tank 2 that contains the plating electrolyte 1. The holder 6 is composed of a non-conductive material, i.e., insulating material, such as a polymeric material, e.g., plastic or rubber, or glass material. The holder 6 is typically composed of the same material as the plating tank 1.
The holder 6 may include a lip portion 8 having a surface that extends over and in direct contact with the working electrode 5. The plating surface 4 of the working electrode 5 is the exposed portion of the working electrode 5 that is in direct contact with the lip portion 8 of the holder 6. The opposing side, i.e., opposing surface, of the lip portion 8 that is not in direct contact with the working electrode 5 is in direct contact with the thief electrode 20a. The lip portion 8 may function as the insulating spacer that obstructs the working electrode 5 from being shorted to the thief electrode 20a.
As used herein, the term “non-blocking” as used to describe the thief electrode 20a means that the thief electrode 20a does not extend past the edge of the lip portion 8 of the holder 6 that is retaining the working electrode 5. This means that the thief electrode 20a is not overlapping the plating surface 4 of the working electrode 5.
Referring again to
The plating electrolyte 1 may be any electrolyte used for electroplating. For copper plating, the plating electrolyte 1 may be an acid or alkaline plating bath, a dilute cyanide bath, Rochelle cyanide bath, sodium cyanide bath, potassium cyanide bath, alkaline noncyanide copper plating bath, or pyrophosphate bath or a combination thereof. In the embodiments, in which copper is being plated onto the working electrode 5, the plating electrolyte 1 may include, but is not limited to, copper cyanide, sodium cyanide, sodium carbonate, sodium hydroxide, Rochelle salt, potassium hydroxide, copper sulfate, sulfuric acid, copper fluoborate and combinations thereof.
In another embodiment, in which chromium is to be plated, the plating electrolyte 1 may be chromic acid in combination with a catalyst, such as sulfate. In another embodiment, to plate nickel, the plating electrolyte 1 composition may include at least one of nickel sulfate, nickel sulfamate, nickel chloride, and boric acid. In yet another embodiment, to plate cadmium, the plating electrolyte 1 composition may be a cyanide bath or a non-cyanide bath. One example of a cyanide bath for plating cadmium includes at least one of cadmium oxide, cadmium metal, sodium cyanide, sodium hydroxide, and sodium carbonate. One example of a non-cyanide bath for plating cadmium includes at least one of ammonium chloride, ammonium fluobarate, ammonium sulfate, boric acid, cadmium, cadmium fluoborate, cadmium oxide, and sulfuric acid.
In a further embodiment, in which zinc is to be plated, the plating electrolyte 1 composition may be a cyanide zinc bath or an alkaline noncyanide bath. In one example, a cyanide zinc bath is composed of at least one of zinc cyanide, sodium cyanide, sodium hydroxide, sodium carbonate, and sodium polysulfide. In one example, a noncyanide bath for plating nickel includes zinc oxide and sodium hydroxide. In yet another embodiment, the plating electrolyte 1 may also provide an indium plating. An indium plating may be provided by an indium fluoroborate plating bath composed of indium flouroborate, boric acid and ammonium fluoroborate. In another example, the indium plating may be provided by an indium sulfamate plating bath comprising indium sulfamate, sodium sulfamate, sodium chloride, dextrose and triethanolamine. Indium-lead fluobarate and indium-lead sulfamate plating baths are also possible.
Tin may be deposited from a plating electrolyte 1 that is composed of alkaline or acid baths. One example of an alkaline bath suitable for a plating electrolyte 1 that provides tin is composed of potassium stannate, sodium stannante, potassium hydroxide and tin metal. One example of an acid bath, i.e., sulfate (acidic) tin plating electrolyte, suitable for a plating electrolyte 1 that provides tin is composed of stannous sulfate, tin metal (as sulfate), free sulfuric acid, phenolsulfonic acid, β-naphthol, and gelatine.
Lead may be deposited from a plating electroltye 1 that is composed of fluobarate baths, fluosilicate baths, sulfamate baths and methane sulfonic acid baths. In one example, in which the plating electrolyte 1 is a fluobarate bath, the plating electrolyte 1 is composed of basic lead carbonate, hydrofluoric acid, boric acid and glue.
Silver may be deposited from a plating electrolyte 1 that is composed of a cyanide based solution composed of silver (as KAg(CN)2,g/L (oz/gal)), potassium cyanide, and potassium carbonate. Non-cyanide solutions for electroplating silver include those based on simple salts such as nitride, fluobarate, and fluosilicite; inorganic complexes, such as iodide, thiocyanate, thiosulfate, pyrophosphate, and trimetaphosphate; and organic complexes, such as succiniumide, lactate and thiourea.
In another embodiment, the plating electrolyte 1 may be used to plate, i.e., deposit, gold on the working electrode 5. A plating electrolyte 1 for depositing gold includes a source of gold, a complexing agent, and a conducting salt to help carry the current. The plating electrolyte for gold may also include an additive for color and hardness. In one example, the plating electrolyte for gold comprises gold as potassium gold cyanide, free potassium cyanide, dipotassium phosphate, sodium hydroxide, sodium carbonate, nickel as potassium nickel cyanide, and silver as potassium silver cyanide.
In another embodiment, the plating electrolyte 1 may be an ionic liquid. Ionic liquids that are suitable for plating electrolyte 1 typically have a higher viscosity than water. In one example, the ionic liquid may be a tetra-alkyl ammonium salt. Some of these ionic liquids can be used to deposit materials that can not be deposited using aqueous based plating electrolytes, such as gallium, germanium, silicon and aluminum.
It is noted that the above-described compositions for the plating electrolyte 1 are included for illustrative purposes only, and are not intended to limit the disclosure. Other plating electrolytes have also been contemplated and are within the scope of the present disclosure. For example, the plating electrolyte 1 may also deposit palladium, ruthenium, rhodium, osmium, iridium and platinum.
Still referring to
The electroplating apparatus 100A further comprises a power supply 40 to bias the working electrode 5 and the counter electrode 10. The power supply may be a DC, AC, pulse and pulse reverse power supply. During the plating operation, DC power is typically employed. In other embodiments, pulsed plating may be utilized. In some instances, such as the beginning of a plating process, pulse reverse power may be utilized. AC current in connection with a frequency analyzer can provide diagnostic information about the quality of the plated material, i.e., material being deposited, as a feedback loop that can then be used to turn the thief electrodes on and off. The power supply may also be bipolar, which may facilitate metal stripping operations.
In the embodiment that is depicted in
The electroplating system 100A may further include a control system (not depicted) for controlling the bias applied by the power supply 40 to the working electrode 5 and the counter electrode 10, and the bias applied by the thief power supply 50 to the thief electrode 20a and the counter electrode 10.
The control system may employ a series of timers. A first timer controls duration of application of power to the working electrode 5 and, hence, controls metal deposited on the working electrode 5. A second timer controls a duration of application of power to the thief electrode 20a. In one example, the timers are employed to dictate the duration of the application of power being supplied from the power supply 40 and the thief power supply 50. The amount of power applied to the thief electrode 20a impacts the plating at the edge of the working electrode 5. By increasing the duration of the application of power to the thief electrode 20a, the amount of material that is being deposited on the edge of the work electrode 5 may be decreased, and by decreasing the duration of power to the thief electrode 20a, the amount of material that is being deposition that is being deposited on the edge, i.e., perimeter, may be increased. Such an embodiment has been utilized to electroplate copper in the range of from 100 nm to 2 microns with a variation in the thickness across the deposition substrate, i.e., working electrode 5, of less than 5% of one sigma (one standard deviation) for the thickness of the plating. In another embodiment, the variation in the thickness across the deposition substrate, i.e., working electrode 5, is less than 3% of one sigma (one standard deviation) for the thickness of the plating. In another embodiment, the material being deposited by electroplating may be deposited to a thickness ranging from 10 microns to 100 microns.
The out of plane non-blocking thief electrode 20a configuration that is depicted in
In one embodiment, the thief electrode 20b has a body that includes a rim portion 9 overlapping the plating surface 4 of the working electrode 5 about a perimeter of the working electrode 5. In the embodiments of the present disclosure, in which the working electrode has a diameter ranging from 10 mm to 500 mm, the rim portion 9 extends beyond the edge of the lip portion 8 of the holder 6 for the working electrode 5 by a dimension ranging from 1 mm to 100 mm. In another embodiment, the rim portion 9 extends beyond the edge of the lip portion 8 of the holder 6 for the working electrode 5 by a dimension ranging from 1 mm to 10 mm.
Typically, the rim portion 9, i.e., blocking portion, of the thief electrode 20b is continuously present about an entirety of the perimeter of the working electrode 5. By “continuously present” it is meant that there are no breaks in the rim portion 9 of the body of the thief electrode 20b that is present about the entirety of the perimeter of the working electrode 5. Typically, the rim portion 9 overlaps 1% to 20% of the surface area of the working electrode 5. In one embodiment, the rim portion 9 overlaps 5% to 10% of the surface area of the working electrode 5. In one embodiment, the outline of the rim portion 9 of the thief electrode 20b defines a window that exposes a centralized portion of the plating surface 4 of the working electrode 5.
With the exception of the rim portion 9 of the thief electrode 20b, the above description for the thief electrode 20a, such as its' composition and connectivity to the thief power supply 50, in connection with the embodiments consistent with
In addition to providing increased uniformity in the deposited plating, a thief electrode 20b that is out of partially blocking the working electrode 5 can substantially reduce the current applied to the thief electrode 20b, and thus reduce the electrochemical reaction rate occurring on the thief electrode 20b, or in turn enable a different electrochemical reaction.
The tunable edge shield thief electrode 20c typically has an independent power supply, i.e., edge shield thief electrode power supply 55, that is similar to the power supply 50 for the thief electrodes 20a, 20b that is described above with reference to
With the exception of the tunable edge shield thief electrode 20c being mounted on a separate holder than the working electrode 5, the above description regarding the composition of the thief electrode 20a, and the degree in which the thief electrode blocks the plating surface 4 in embodiments having a blocking thief, is suitable for the tunable edge shield thief electrode 20c that is depicted in
The composition of the wire mesh material and its geometry is selected to allow for maximum flow while maintaining a smooth electric field.
The full tunable shield thief electrode 20d is mounted on a holder 11 that is separate from the holder 6 that retains the working electrode 5, in which the full tunable shield thief electrode 20d is present between the working electrode 5 and the counter electrode 10. The full tunable shield thief electrode 20d may be separated from the working electrode 5 by a dimension D3 ranging from 5 mm to 600 mm. In another example, the full tunable shield thief electrode 20d may be separated from the working electrode 5 by a dimension D3 ranging from 100 mm to 300 mm. In yet another example, the full tunable shield thief electrode 20d may be separated from the working electrode 5 by a dimension D3 ranging from 200 mm to 300 mm. Although, the full tunable shield thief electrode 20d is depicted as being positioned at the midpoint between the working electrode 5 and the counter electrode 10, embodiments have been contemplated in which the full tunable shield thief electrode 20d is present in closer proximity to the working electrode 5 or in closer proximity to the counter electrode 10.
The counter electrode 10 and the out of plane thief electrode 20f are stationary with respect to the working electrode 5. In one embodiment, the counter electrode 10 and the out of plane thief electrode 20f are mounted to the plating tank 2. By mounting the out of plane thief electrode 20f on the plating tank 2, which is separate from the working electrode 5, the exterior face 35 of the out of plane thief electrode 20f is offset from the plating surface 4 of the working electrode 5. The out of plane thief electrode 20f may be a non-blocking or a blocking thief electrode.
The working electrode 5 is mounted on the conductive tow line 60. The working electrode 5 may be composed of any material that may be electroplated. Examples of suitable materials for the working electrode 5 include elemental elements including, but not limited to Cu, Ag, Ni, Fe, Al, Zn, Pd, platinized Ti, Co, Mo, Sn Ta, Ir, Pt, Pb, Bi, Cr, Nb, Zr, Au, SS 304, SS 316, Ti and combinations and alloys thereof. The working electrode 5 may also be composed of semiconductor materials, so long as the working electrode 5 is conductive so that it may be biased to attract positively charged metal ions from the plating electrolyte 1. The working electrode 5 may have any geometry to be plated.
The working electrode 5 is mounted to a holder 59 that is connected to the conductive tow line 60 and supports the working electrode 5 while traversed through the plating tank 2. The holder 59 may be composed of a non-conductive material, i.e., insulating material, such as a polymeric material, e.g., plastic or rubber, or glass material. Electrical communication between the conductive tow line 60 and the working electrode 5 is provided by contacts 65 that extend from, and are in direct contact with, each of the working electrode 5 and the conductive tow line 60. The contacts 65 may be composed of any conductive material, such as a metal.
The continuous electroplating apparatus 100f may further include a power supply 40 to bias the working electrode 5 and the counter electrode 10. The power supply 40 to bias the working electrode 5 and the counter electrode 10 may be a DC, AC, pulse and pulse reverse power supply. During the plating operation, DC power is typically employed. In other embodiments, pulsed plating may be utilized. In some instances, such as the beginning of a plating process, pulse reverse power may be utilized. AC current in connection with a frequency analyzer can provide diagnostic information about the quality of the plated material as a feedback loop that can then be used to turn the thief electrodes on and off. The power supply may also be bipolar, which may facilitate metal stripping operations. In the embodiment that is depicted in
In one example, the continuous electroplating apparatus 100g is a roll to roll electroplating system. The roll to roll electroplating system includes a plating tank 2 containing a plating electrolyte 1 and a pulley system 85, which are similar to the plating tank 2 and pulley system 85 that are described above in reference to
The working electrode 5 and the out of plane thief electrode 20g are mounted to a holder 59 that is connected to a conductive tow line 70 that includes at least two separate wires, in which the wires are used to carry independent current to each of the working electrode 5 and the out of plane thief electrode 20g. The holder 59 supports the working electrode 5 while it traversed into and out of the plating tank 2 during the electroplating process. The holder 59 may be composed of a non-conductive material, i.e., insulating material, such as a polymeric material, e.g., plastic or rubber, or glass material.
The working electrode 5 may be composed of any material that may be electroplated. Examples of suitable materials for the working electrode 5 include elemental elements including, but not limited to Cu, Ag, Ni, Fe, Al, Zn, Pd, platinized Ti, Co, Mo, Sn Ta, Ir, Pt, Pb, Bi, Cr, Nb, Zr, Au, SS 304, SS 316, Ti and combinations and alloys thereof. The working electrode 5 may also be composed of semiconductor materials, so long as the working electrode 5 is conductive so that it may be biased to attract positively charged metal ions from the plating electrolyte 1. The working electrode 5 may have any geometry to be plated.
The out of plane thief electrode 20g may be a non-blocking or a blocking thief electrode. The out of plane thief electrode 20g is typically present about the perimeter of the working electrode 5, but is separated from the working electrode 5 to avoid shorting the device. An insulating spacer (not shown) may be present between the out of plane thief electrode 20f and the working electrode 5. The insulating spacer may be a component of the holder 59.
The shape of the out of plane thief electrode 20g images the outline of the working electrode 5. For example, when the working electrode 5 has a substantially circular perimeter, the out of plane thief electrode 20g is also substantially circular. When the working electrode has a multi-sided perimeter, the out of plane thief electrode 20g is also multi-sided. In one embodiment, the out of plane thief electrode 20g is continuously present about the perimeter of the working electrode 5. By “continuously present” it is meant that there are no breaks in the body of the out of plane thief electrode 20g that is present about the entirety of the perimeter of the working electrode 5. By out of plane it is meant that the exterior face 35 of the thief electrode 20g is not on the same plane as the plating surface 4 of the working electrode 5. Therefore, the exterior face 35 of the out of plane thief electrode 20g and the plating surface 4 of the working electrode 5 are not coplanar.
The continuous electroplating apparatus 100g may further include a power supply 40 to bias the working electrode 5 and the counter electrode 10. In the embodiment that is depicted in
In another aspect, an electroplating method is provided that includes providing a plating tank containing a plating electrolyte, positioning an anode in contact with the plating electrolyte, and positioning a cathode system in contact with the plating electrolyte.
The cathode system includes a working electrode having a plating surface and a thief electrode that is separated from the working electrode. The thief electrode includes a face that is in contact with the plating electrolyte and is offset from the plating surface of the working electrode. A bias is applied to the anode and the cathode system, wherein metal compound dissociates to provide the metal ions that are plated on the surface of the working electrode. The plating formed on the plating surface of the working electrode has a uniform thickness from the perimeter, i.e., edge, of the plating surface to the center of the plating surface.
The current applied to the thief of the cathode system ranges from 0.1 mA/cm2 to 10 mA/cm2, and the current applied to the working electrode ranges from 1 mA/cm2 to 200 mA/cm2.
It has been determined that in some embodiments, positioning the thief electrode to be offset from the plating surface of the working electrode increases the uniformity of the plating thickness. Electroplating devices that do not include a thief electrode, or include a thief electrode that is not offset from the plating surface of the working electrode, have increased plating thickness at the edge, i.e., perimeter, of the working electrode. In comparison, the metal plate produced by an electroplating apparatus in which the face of the thief electrode that is in contact with the plating electrolyte is offset from the plating surface of the working electrode has a uniform thickness extending across the entirety of the plating surface including the portion of the plating at the edge of the working electrode. The uniform thickness may be a variation in the thickness across the deposition substrate, i.e., working electrode, of less than 5% of one sigma (one standard deviation) for the thickness of the plating. In another embodiment, the variation in thickness across the deposition substrate may be less than 3% of one sigma for the thickness of the plating.
The thief electrodes and polarized shields that are disclosed herein may either operate in plating metal or in generating gases. The decision regarding the function of the thief electrodes and the polarized shields may be dependent upon if the gases will stay dissolved in liquid or form bubbles. In the later case, in some embodiments, it may be advantageous that the thief electrode is not mounted to the holder for the working electrode. Further, in some embodiments, a mesh thief electrode composed of platinized Pt or platinized Ti is used to generate H2 gas.
In addition to the above-described electroplating process, the apparatuses described above may be employed in electroless processes. For example, electroless processes can benefit from application of the above-described apparatuses during the initial stages of plating by applying an electric field at the very beginning of the process. Nickel phosphorus (NiP) is one example of an electroless plating process that may benefit from the application of an electrical field at the very beginning of the process. Nickel phosphorus plating is notorious for exhibiting a skip plating phenomena. Initiating plating uniformity across the deposition surface is one mechanism by which skip plating can be minimized. By setting up a current between the anode and the thief, in which no power is applied to the working electrode, the uniformity of the initial plating of nickel phosphorus may be enhanced. In another example, the uniformity of the initial plating of the nickel phosphorus may be enhanced by setting up a current between the anode, the thief and the working electrode.
The apparatuses and methods disclosed herein are suitable for depositing thin platings, such as deposited layers having a thickness ranging from 100 nm to 2 microns, or thicker platings, such as deposited layers having a thickness ranging from 10 microns to 100 microns. In one embodiment, the apparatuses and methods may provide a variation in the thickness across the deposition substrate, i.e., working electrode 5, of less than 5% of one sigma (one standard deviation) for the thickness of the plating. In another embodiment, the variation in the thickness across the deposition substrate, i.e., working electrode 5, is less than 3% of one sigma (one standard deviation) for the thickness of the plating.
The deposition surface may have an area of up to 700 cm2. In some instances, the deposition surface may have an area that can be as greater as 1 meter2, such as 7,200 cm2. The surfaces on which the plating may be deposited may have a varied topography. In the instances in which the deposition surface has a varied topography, the apparatuses and methods disclosed herein provide deposited layers on the varied topography having a uniform thickness.
It is noted that the above described thief electrodes are equally applicable to the anode and cathode electrodes.
While the invention has been particularly shown and described with respect to preferred embodiments thereof, it will be understood by those skilled in the art that the foregoing and other changes in form and details may be made therein without departing from the spirit and scope of the present invention.
This application is a continuation of U.S. patent application Ser. No. 12/806,719, filed Aug. 19, 2010 the entire content and disclosure of which is incorporated herein by reference.
Number | Date | Country | |
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Parent | 12806719 | Aug 2010 | US |
Child | 13612661 | US |