The disclosure is directed to yttrium oxide coatings having improved performance in the mid-infrared region, and in particular to yttrium oxide coatings in which the yttrium oxide coating's absorption peaks at 3 μm, 6.6 μm and 7.1 μm are eliminated.
Metal oxides are the materials of choice for the production of optical interference coatings in the visible and ultraviolet spectral ranges due to their excellent properties such as optical transparency and environmental stability. However, in the infrared (IR) spectral range, metal oxides are not widely used because these materials are not absorption free throughout the IR range of approximately 0.75 μm to 12 μm. Yttrium oxide is one of the more attractive metal oxides for IR oxide coatings and although it has relatively high transmittance up to the long-wave infrared (LWIR) range, it is not entirely absorption free. The attractive properties of yttrium oxide (Y2O3) are good thermal and chemical stability, and high mechanical strength and hardness when compared to other IR materials such as ZnSe and ZnS. Yttrium oxide coatings could thus be used in a variety of processes such as protecting a semiconductor processing apparatus (U.S. Patent Application Publication No. 2005/0037193); as a fiber reinforced coating (U.S. Pat. No. 5,316,797); as a diffusion barrier coating in glass molding processes (U.S. Pat. No. 5,769,918); as an antireflective coating for solar cells (U.S. Pat. No. 4,246,043); and as an antireflective and protective coating for infrared optics using ZnSe or ZnS (Su Xianjum et al, “Design and Fabrication of antireflection coating on ZnS substrates,” Proceeding SPIE, Vol 6149, 614907 (2006). However, as stated above, in IR optical applications Y2O3 coating are not completely absorption free. For example, Su Xiangjun, ibid, and Rongfa Chen, “Investigation of infrared transmittivity [sic] of Y2O3 coating/diamond films,” Chinese Optics Letters, Vol. 8 Supplement, pages 130-133 (2010), reported that coatings made using electron beam (e-beam) evaporated Y2O3 exhibit several IR absorption bands located at approximately 3.0 μm, 6.6 μm and 7.1 μm. These coatings were prepared by the usual prior art method in which Y2O3, in the form of a compressed disc of material was electron bean evaporated and deposited on a substrate. This method give rise to the adsorption peaks at approximately 3.0 μm, 6.6 μm and 7.1 μm. Consequently, in order to make full use of the desirable properties of yttrium oxide coatings over a broader range, particularly in the approximately 3-8 μm range, there is a need for improving the transmittance of Y2O3 films or coatings.
The present disclosure is directed to improved, low transmission loss yttrium oxide coatings made using a modified reactive plasma ion-assisted deposition (PIAD) and optics having such coating thereon and to optical elements having such coatings. The method for making optical elements having a yttrium oxide thereon utilizes plasma ion-assisted deposition, an oxygen ion-containing atmosphere during deposition and yttrium metal as the yttrium source. Using this method it has been found that the three typical absorption band peaks at approximately 3 μm, 6.6 μm and 7.1 μm are eliminated or substantially eliminated in IR spectral region of approximately 2-12 μm and a homogeneous Y2O3 coating was formed on the substrate. Samples prepared using ZnSe as a substrate and a Y2O3 coating having a thickness of 990 μm exhibited at least 70% transmittance in the spectral range of 2-12 μm. The Y2O3 coating according to the disclosure can be used in numerous IR applications in which low absorption loss Y2O3 coatings are desired; for example, as protective coatings for Ag and Au mirrors, protective antireflection coatings for substrates, for example without limitation, ZnSe and ZnS, and in other applications in which Y2O3 coatings are desirable and useful. The advantages of the present disclosure are as follows.
In one embodiment the yttrium oxide coating does not decrease the transmittance and the overall transmission is greater than or equal to the uncoated substrate.
Herein, the Y2O3 coatings referred to as “prior art” coatings are those made using Y2O3 as the coating material source and not yttrium metal, Y, as described in the present disclosure, and the deposition was carried out using electron beam deposition methods in which the Y2O3 source material is vaporized and deposited on a substrate without the use of any plasma ion assistance. In contrast to the prior art, the Y2O3 coatings of this disclosure are made using Y metal as the Y source 42. The Y metal is vaporized by the e-beam, is oxidized upon contact with the oxygen 48 fed into the plasma 47 and forms a Y2O3 coating on deposition onto a substrate 62. Also herein the terms “substrate” and “optic” may be used interchangeably; and the terms “coated substrate” and “coated optic” may also be used interchangeably.”
Oxide materials are widely used in optical coating technology because of their excellent optical, thermal and mechanical properties when compared to fluoride materials and to II-VI semiconductors such ZnSe and ZnS. However, the spectral bandwidth of oxide coatings is restricted by two fundamental absorption edges located in ultraviolet (UV) and infrared (IR) spectral regions, respectively. The UV absorption edge represents inter-band electron excitation, whereas the IR absorption edge corresponds to phonon and intra-band electron excitation. The spectral coverage of oxide coatings for optical applications ranges from UV to near IR. As a result, fluorides and II-VI semiconductors such ZnSe and ZnS are dominated in the IR spectral region. However, due to soft nature of these IR materials, it is desirable to extend the range of oxide coatings for optical applications from the near IR (NIR, approximately 0.75-1.4 μm) to short-wavelength IR (SWIR, 1-3 μm) and middle-wave infrared (MWIR, 3-5 μm), and even long-wave infrared (LWIR, 8-14 μm).
Infrared sensors for imaging are used extensively for both civilian and military purposes. Civilian uses include infrared astronomy using a sensor equipped telescope to penetrate space dust to detect objects such as planets and view red-shifted objects, thermal efficiency analysis, environmental monitoring, industrial facility inspections, remote temperature sensing, short-ranged wireless communications, spectroscopy and weather forecasting. Military applications include target acquisition, surveillance, night vision, homing and tracking. These uses require that the sensors have a coating that can withstand environmental conditions both terrestrial and extra-terrestrial that would degrade an uncoated sensor's performance.
Among various oxide materials, yttrium oxide (Y2O3) is one of the best candidates as oxide coating material for the expanded IR applications due to its excellent optical, thermal and mechanical properties. The Background section provides several citations directed to various applications of yttrium oxide as a coating material. These citations indicate that there are some strong absorptions appearing in the IR spectral regions that lead to high absorption losses. In particular there are large losses at 3.0 μm, 6.6 μm and 7.1 μm. In addition, Chen et al, op cit., found that Y2O3 coatings have an inhomogeneous structure. An inhomogeneous coating structure can reduce the coating durability and increase scatter loss. As a result, there are two technical challenges that must be overcome in order to extend Y2O3 coatings into the short wavelength and mid-wavelength IR regions. These challenges are:
(a) reducing Y2O3 coating absorption in the IR regions, and
(b) eliminating Y2O3 coating inhomogeneity.
These two technical roadblocks have been removed by the method disclosed herein that uses a modified reactive plasma ion-assisted deposition method and yttrium metal in an oxygen-containing plasma atmosphere. When the disclosed method is used the absorbance peaks at 3 μm, 6.6 μm and 7.1 μm are not present in an optic having the resulting Y2O3 coating. The method can be used to deposit Y2O3 coatings having any utilitarian thickness. In one embodiment the deposited Y2O3 coatings have a thickness in the range of 300 nm to 3000 nm. In a further embodiment the coating thickness is in the range of 700 nm to 3000 nm. In another embodiment the thickness is in the range of 500 nm to 2000 nm. In an additional embodiment the thickness is in the range of 500 nm to 1200 nm.
The results presented in
where Yb is the bias voltage, Ji and mi is the plasma ion flux in ion/(cm2 sec) and mass in a.u. (atomic units), respectively. Additionally, R is the deposition rate in nm/sec; e is the electron charge; k is a unit conversion factor; ns is the surface atom density of the deposited coating in atom/cm2; and β and α are the radian of the shielded and unshielded areas relative to the center of the rotated plate with a frequency f. By adjusting the reversed mask shape and height, APS (advanced plasma source) parameters and plate rotation frequency, one can separately control the amount of momentum transfer for plasma assisted deposition and for plasma smoothing. Equation (1) can also be used to describe a typical PIAD standard setup, where α and β equal ˜2π and ˜zero, respectively. In this case, the plasma momentum transfer only assists coating deposition, whereas the second term for smoothing is almost zero.
The modified reactive plasma ion-assisted deposition method, which can be used to form Y2O, includes:
(a) Using high purity yttrium metal as a starting material instead of yttrium oxide for electron-beam evaporation in an oxygen-rich plasma environment. The deposition rate of the Y2O3 coating ranges from 0.05 nm/sec to 0.35 nm/sec with an O2 bleeding rate in the range of 10 sccm to 40 sccm (sccm=standard cubic centimeters per minute).
(b) Using an reversed mask 44 to enable a reactive plasma ion-assisted deposition and an in-situ reactive plasma ion-smoothing in which the reactive plasma ion-assisted deposition and smoothing occur alternatively between a few atomic layers of Y2O3 accumulation. The plasma ion-assisted deposition and the in-situ smoothing processes are achieved via plasma ion momentum transfer, adjusted by changing bias voltage between the plasma source and the substrate holder. The bias voltage is in the range of 60V to 150V.
(c) Using a side shield to prevent plasma arcing due to yttrium metal interaction with plasma source insulation components.
(d) Heating the substrate during yttrium evaporation to ensure a completed reactive deposition of Y2O3. The substrate heating temperature is in the range of 120° C. to 300° C.
To summarize the method of this disclosure, it is directed to a method for preparing a substrate having a coating of a coating of yttrium oxide thereon that does not have absorption peaks at 3.0 μm, 6.6 μm and 7.1 μm, said method comprising the steps of:
providing a vacuum chamber and within said chamber:
providing a optic on which a coating is to be deposited;
providing a source of yttrium metal and vaporizing said yttrium metal using an e-beam to provide a yttrium vapor flux, said flux passing from said source through a reversed mask to said substrate; providing plasma ions from a plasma source, said plasma ions containing oxygen ions;
rotating said substrate at a selected rotation frequency f;
depositing said coating material on said substrate and bombarding said substrate and said deposited materials with said oxygen ion containing plasma during and after said yttrium deposition process to form a dense, smooth yttrium oxide coating on said substrate;
wherein:
said rotational frequency f is in the range of 12 to 36 rpm, and said flux is delivered to said substrate at an angle φ that is ≦20′; and
the surface of said substrate is bombarded with said plasma ions for a time in the range of 1-4 minutes prior to the deposition of the coating material(s)). The substrate is removed from the coating chamber when the coating process is completed.
The deposition rate of the Y3O3 coating is in the range of 0.05 nm/sec to 0.35 nm/sec. The O2 bleeding rate into the plasma is in the range of 10 sccm to 40 sccm. The plasma ions are formed from a plasma gas, and said plasma gas is selected from the group consisting of argon, xenon, and a mixture of argon or xenon, said gases being mixed with oxygen.
The yttrium oxide coating described herein can be applied to any suitable substrate. In the 2 μm to 12 μm wavelength range suitable substrates include ZnS, ZnSe and Cleartran™ (a special type of multi-spectral ZnS available from Edmund Optics, Barrington, N.J.). The coating can also be used with sapphire substrates, silicon (Si) substrates for 3-5 μm imaging applications, and with germanium substrates (Ge) for both 3-5 μm and 8-12 μm imaging applications.
To summarize the product of this disclosure, the product is an infrared transmissive substrate having a yttrium oxide coating thereon, said coated substrate exhibiting a infrared transmittance equal to or greater than the infrared transmittance of the uncoated substrate over the wavelength range of 2 μm to 12 μm. In one aspect the transmission spectrum of the coated substrate is greater than the transmission spectrum of the uncoated substrate over the wavelength range of 4 μm to 12 μm. In another aspect the transmission spectrum of the coated substrate does not exhibit at least one of the yttrium oxide yttrium oxide infrared absorption peaks at approximately 3.0 μm, 6.6 μm and 7.1 μm within the wavelength range of 2 μm to 12 μm that are found in substrates coated using Y2O3 as the starting material for coating. In another aspect the transmission spectrum of the coated substrate does not exhibit at least two of the yttrium oxide yttrium oxide infrared absorption peaks at approximately 3.0 μm, 6.6 μm and 7.1 μm within the wavelength range of 2 μm to 12 μm. In a further aspect the transmission spectrum of the coated substrate does not exhibit the yttrium oxide yttrium oxide infrared absorption peaks at approximately 3.0 μm, 6.6 μm and 7.1 μm within the wavelength range of 2 μm to 12 μm. In an embodiment the yttrium oxide coating has a thickness in the range of 300 nm to 1500 nm. In another embodiment the substrate is selected from the group consisting of ZnS, ZnSe, Cleartran™, Si, Ge and sapphire.
While the invention has been described with respect to a limited number of embodiments, those skilled in the art, having benefit of this disclosure, will appreciate that other embodiments can be devised which do not depart from the scope of the invention as disclosed herein. Accordingly, the scope of the invention should be limited only by the attached claims.
This application claims the benefit of priority under 35 U.S.C. §119 of U.S. Provisional Application Ser. No. 61/564,367 filed on Nov. 29, 2011 the content of which is relied upon and incorporated herein by reference in its entirety.
Number | Date | Country | |
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61564367 | Nov 2011 | US |