Abhijeet Paul

Person

Poway, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Thermal extraction of single layer transfer integrated circuits
- Patent number 12,113,069
- Issue date Oct 8, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage FET
- Patent number 12,100,734
- Issue date Sep 24, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SLT integrated circuit capacitor structure and methods
- Patent number 12,062,669
- Issue date Aug 13, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switching device
- Patent number 12,027,623
- Issue date Jul 2, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SLT integrated circuit capacitor structure and methods
- Patent number 11,652,112
- Issue date May 16, 2023
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage FET
- Patent number 11,469,296
- Issue date Oct 11, 2022
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal extraction of single layer transfer integrated circuits
- Patent number 11,437,404
- Issue date Sep 6, 2022
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low parasitic capacitance RF transistors
- Patent number 11,335,704
- Issue date May 17, 2022
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density IC capacitor structure
- Patent number 11,276,749
- Issue date Mar 15, 2022
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SLT integrated circuit capacitor structure and methods
- Patent number 11,133,338
- Issue date Sep 28, 2021
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switching device
- Patent number 10,923,592
- Issue date Feb 16, 2021
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density IC capacitor structure
- Patent number 10,777,636
- Issue date Sep 15, 2020
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage FET
- Patent number 10,756,166
- Issue date Aug 25, 2020
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-Q integrated circuit inductor structure and methods
- Patent number 10,672,806
- Issue date Jun 2, 2020
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal extraction of single layer transfer integrated circuits
- Patent number 10,658,386
- Issue date May 19, 2020
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator transistor with improved breakdown chara...
- Patent number 10,580,903
- Issue date Mar 3, 2020
- pSemi Corporation
- Hiroshi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SLT integrated circuit capacitor structure and methods
- Patent number 10,573,674
- Issue date Feb 25, 2020
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switching device
- Patent number 10,319,854
- Issue date Jun 11, 2019
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage FET
- Patent number 10,115,787
- Issue date Oct 30, 2018
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High Voltage Switching Device
- Publication number 20240413243
- Publication date Dec 12, 2024
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SLT Integrated Circuit Capacitor Structure and Methods
- Publication number 20230361135
- Publication date Nov 9, 2023
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Leakage FET
- Publication number 20230094494
- Publication date Mar 30, 2023
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal Extraction of Single Layer Transfer Integrated Circuits
- Publication number 20230072271
- Publication date Mar 9, 2023
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SLT Integrated Circuit Capacitor Structure and Methods
- Publication number 20220085079
- Publication date Mar 17, 2022
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Switching Device
- Publication number 20210234043
- Publication date Jul 29, 2021
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal Extraction of Single Layer Transfer Integrated Circuits
- Publication number 20210217776
- Publication date Jul 15, 2021
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Density IC Capacitor Structure
- Publication number 20210020736
- Publication date Jan 21, 2021
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Leakage FET
- Publication number 20210005709
- Publication date Jan 7, 2021
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Parasitic Capacitance RF Transistors
- Publication number 20200335522
- Publication date Oct 22, 2020
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SLT Integrated Circuit Capacitor Structure and Methods
- Publication number 20200227447
- Publication date Jul 16, 2020
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Parasitic Capacitance RF Transistors
- Publication number 20200043946
- Publication date Feb 6, 2020
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Q Integrated Circuit Inductor Structure and Methods
- Publication number 20200027908
- Publication date Jan 23, 2020
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal Extraction of Single Layer Transfer Integrated Circuits
- Publication number 20200027898
- Publication date Jan 23, 2020
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SLT INTEGRATED CIRCUIT CAPACITOR STRUCTURE AND METHODS
- Publication number 20200027907
- Publication date Jan 23, 2020
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Switching Device
- Publication number 20190288113
- Publication date Sep 19, 2019
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor-On-Insulator Transistor with Improved Breakdown Chara...
- Publication number 20190288119
- Publication date Sep 19, 2019
- pSemi Corporation
- Hiroshi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backside Charge Control for FET Integrated Circuits
- Publication number 20190288006
- Publication date Sep 19, 2019
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Switching Device
- Publication number 20190172948
- Publication date Jun 6, 2019
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Leakage FET
- Publication number 20180366542
- Publication date Dec 20, 2018
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS

Abhijeet Paul

Person

Patents Grantslast 30 patents

Thermal extraction of single layer transfer integrated circuits

Low leakage FET

SLT integrated circuit capacitor structure and methods

High voltage switching device

SLT integrated circuit capacitor structure and methods

Low leakage FET

Thermal extraction of single layer transfer integrated circuits

Low parasitic capacitance RF transistors

High density IC capacitor structure

SLT integrated circuit capacitor structure and methods

High voltage switching device

High density IC capacitor structure

Low leakage FET

High-Q integrated circuit inductor structure and methods

Thermal extraction of single layer transfer integrated circuits

Semiconductor-on-insulator transistor with improved breakdown chara...

SLT integrated circuit capacitor structure and methods

High voltage switching device

Low leakage FET

Patents Applicationslast 30 patents

High Voltage Switching Device

SLT Integrated Circuit Capacitor Structure and Methods

Low Leakage FET

Thermal Extraction of Single Layer Transfer Integrated Circuits

SLT Integrated Circuit Capacitor Structure and Methods

High Voltage Switching Device

Thermal Extraction of Single Layer Transfer Integrated Circuits

High Density IC Capacitor Structure

Low Leakage FET

Low Parasitic Capacitance RF Transistors

SLT Integrated Circuit Capacitor Structure and Methods

Low Parasitic Capacitance RF Transistors

High-Q Integrated Circuit Inductor Structure and Methods

Thermal Extraction of Single Layer Transfer Integrated Circuits

SLT INTEGRATED CIRCUIT CAPACITOR STRUCTURE AND METHODS

High Voltage Switching Device

Semiconductor-On-Insulator Transistor with Improved Breakdown Chara...

Backside Charge Control for FET Integrated Circuits

High Voltage Switching Device

Low Leakage FET