Agerico L. Esquivel

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Slot trench isolation for flash EPROM
- Patent number 6,201,277
- Issue date Mar 13, 2001
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a nonvolatile stacked memory
- Patent number 5,306,935
- Issue date Apr 26, 1994
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an array device with buried interconnects
- Patent number 5,084,418
- Issue date Jan 28, 1992
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate memory cell and device
- Patent number 5,053,839
- Issue date Oct 1, 1991
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a pleated floating gate trench EPROM
- Patent number 5,045,490
- Issue date Sep 3, 1991
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making fast, trench isolated, planar flash EEPROMS with s...
- Patent number 5,028,553
- Issue date Jul 2, 1991
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory
- Patent number 5,008,722
- Issue date Apr 16, 1991
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate memory cell and device
- Patent number 4,979,004
- Issue date Dec 18, 1990
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried multilevel interconnect system
- Patent number 4,977,439
- Issue date Dec 11, 1990
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast, trench isolated, planar flash EEPROMS with silicided bitlines
- Patent number 4,951,103
- Issue date Aug 21, 1990
- Texas Instruments, Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar famos transistor with trench isolation
- Patent number 4,905,062
- Issue date Feb 27, 1990
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EPROM with increased floating gate/control gate coupling
- Patent number 4,892,840
- Issue date Jan 9, 1990
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EPROM with increased floating gate/control gate coupling
- Patent number 4,855,800
- Issue date Aug 8, 1989
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar FAMOS transistor with sealed floating gate and DCS+N.sub.2 O...
- Patent number 4,833,514
- Issue date May 23, 1989
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a non-volatile memory having dielectric filled tre...
- Patent number 4,698,900
- Issue date Oct 13, 1987
- Texas Instruments Incorporated
- Agerico L. Esquivel
- H01 - BASIC ELECTRIC ELEMENTS

Agerico L. Esquivel

Person

Patents Grantslast 30 patents

Slot trench isolation for flash EPROM

Method of forming a nonvolatile stacked memory

Method of making an array device with buried interconnects

Floating gate memory cell and device

Method of making a pleated floating gate trench EPROM

Method of making fast, trench isolated, planar flash EEPROMS with s...

Non-volatile memory

Floating gate memory cell and device

Buried multilevel interconnect system

Fast, trench isolated, planar flash EEPROMS with silicided bitlines

Planar famos transistor with trench isolation

EPROM with increased floating gate/control gate coupling

EPROM with increased floating gate/control gate coupling

Planar FAMOS transistor with sealed floating gate and DCS+N.sub.2 O...

Method of making a non-volatile memory having dielectric filled tre...