Andrew Walker

Person

Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and system for fin-based voltage clamp
- Patent number 12,155,204
- Issue date Nov 26, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional perpendicular magnetic tunnel junction with thin...
- Patent number 12,069,964
- Issue date Aug 20, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Compact and efficient CMOS inverter
- Patent number 11,688,649
- Issue date Jun 27, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Amitay Levi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterned silicide structures and methods of manufacture
- Patent number 11,631,807
- Issue date Apr 18, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with selective epitaxial cell transistor
- Patent number 11,626,407
- Issue date Apr 11, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density spin orbit torque magnetic random access memory
- Patent number 11,600,769
- Issue date Mar 7, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector transistor with continuously variable current drive
- Patent number 11,545,524
- Issue date Jan 3, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector transistor with metal replacement gate wordline
- Patent number 11,444,123
- Issue date Sep 13, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Dafna Beery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional perpendicular magnetic tunnel junction with thin...
- Patent number 11,417,829
- Issue date Aug 16, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
DRAM with selective epitaxial transistor and buried bitline
- Patent number 11,329,048
- Issue date May 10, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact and efficient CMOS inverter
- Patent number 11,302,586
- Issue date Apr 12, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Amitay Levi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with selective epitaxial cell transistor
- Patent number 11,302,697
- Issue date Apr 12, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction memory cells having vertical...
- Patent number 11,222,970
- Issue date Jan 11, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterned silicide structures and methods of manufacture
- Patent number 11,107,979
- Issue date Aug 31, 2021
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of epitaxially grown channel selector with two terminal...
- Patent number 10,957,370
- Issue date Mar 23, 2021
- Spin Memory, Inc.
- Dafna Beery
- G11 - INFORMATION STORAGE
Information Patent Grant
Integration of epitaxially grown channel selector with MRAM device
- Patent number 10,937,479
- Issue date Mar 2, 2021
- Spin Memory, Inc.
- Dafna Beery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density MRAM integration
- Patent number 10,930,703
- Issue date Feb 23, 2021
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertically-strained silicon device for use with a perpendicular mag...
- Patent number 10,916,582
- Issue date Feb 9, 2021
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical selector stt-MRAM architecture
- Patent number 10,854,255
- Issue date Dec 1, 2020
- Spin Memory, Inc.
- Adrian E. Ong
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical selector STT-MRAM architecture
- Patent number 10,840,298
- Issue date Nov 17, 2020
- Spin Memory, Inc.
- Adrian E. Ong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density MRAM integration
- Patent number 10,686,009
- Issue date Jun 16, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming perpendicular magnetic tunnel junction memory ce...
- Patent number 10,658,425
- Issue date May 19, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a three dimensional perpendicular magnetic tunnel...
- Patent number 10,629,649
- Issue date Apr 21, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming perpendicular magnetic tunnel junction memory ce...
- Patent number 10,468,293
- Issue date Nov 5, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction memory cells having shared s...
- Patent number 10,460,778
- Issue date Oct 29, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Annular vertical Si etched channel MOS devices
- Patent number 10,438,999
- Issue date Oct 8, 2019
- Spin Memory, Inc.
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices including magnetic tunnel junctions integrated with selectors
- Patent number 10,438,995
- Issue date Oct 8, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of fabricating magnetic tunnel junctions integrated with se...
- Patent number 10,438,996
- Issue date Oct 8, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensional perpendicular magnetic junction with thin-film tr...
- Patent number 10,355,045
- Issue date Jul 16, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep slope field-effect transistor (FET) for a perpendicular magne...
- Patent number 10,355,046
- Issue date Jul 16, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND SYSTEM FOR A FIN-BASED VOLTAGE CLAMP
- Publication number 20250055276
- Publication date Feb 13, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Andrew J. WALKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CHARGE EXTRACTION STRUCTURE FOR EDGE TERMINATION
- Publication number 20240120417
- Publication date Apr 11, 2024
- NEXGEN POWER SYSTEMS, INC.
- Kyoung Wook Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FIN-BASED VOLTAGE CLAMP
- Publication number 20230378750
- Publication date Nov 23, 2023
- NEXGEN POWER SYSTEMS, INC.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR ROUTING OF ELECTRICAL CONDUCTORS OVER NEUTRAL...
- Publication number 20230378348
- Publication date Nov 23, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIN-BASED FIELD EFFECT TRANSISTOR (FINFET) WITH CONNECTED...
- Publication number 20230361126
- Publication date Nov 9, 2023
- NEXGEN POWER SYSTEMS, INC.
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIN-BASED FIELD EFFECT TRANSISTOR (FINFET) WITH VARYING CO...
- Publication number 20230260996
- Publication date Aug 17, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIN-BASED FIELD EFFECT TRANSISTOR (FINFET) WITH NEUTRALIZE...
- Publication number 20230246027
- Publication date Aug 3, 2023
- NEXGEN POWER SYSTEMS, INC.
- Subhash Srinivas Pidaparthi
- C30 - CRYSTAL GROWTH
Information Patent Application
THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...
- Publication number 20220344580
- Publication date Oct 27, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY SPIN ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20220223787
- Publication date Jul 14, 2022
- SPIN (assignment for benefit of creditors), LLC
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT AND EFFICIENT CMOS INVERTER
- Publication number 20220189829
- Publication date Jun 16, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Amitay Levi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM WITH SELECTIVE EPITAXIAL CELL TRANSISTOR
- Publication number 20220189961
- Publication date Jun 16, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Patterned Silicide Structures and Methods of Manufacture
- Publication number 20220029092
- Publication date Jan 27, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR TRANSISTOR WITH METAL REPLACEMENT GATE WORDLINE
- Publication number 20210391386
- Publication date Dec 16, 2021
- SPIN (assignment for benefit of creditors), LLC
- Dafna Beery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT AND EFFICIENT CMOS INVERTER
- Publication number 20210305105
- Publication date Sep 30, 2021
- Spin Memory, Inc.
- Amitay Levi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM WITH SELECTIVE EPITAXIAL TRANSISTOR AND BURIED BITLINE
- Publication number 20210305256
- Publication date Sep 30, 2021
- Spin Memory, Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM WITH SELECTIVE EPITAXIAL CELL TRANSISTOR
- Publication number 20210233913
- Publication date Jul 29, 2021
- Spin Memory, Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR TRANSISTOR WITH CONTINUOUSLY VARIABLE CURRENT DRIVE
- Publication number 20210217814
- Publication date Jul 15, 2021
- Spin Memory, Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF EPITAXIALLY GROWN CHANNEL SELECTOR WITH TWO TERMINAL...
- Publication number 20210090626
- Publication date Mar 25, 2021
- Spin Memory, Inc.
- Dafna Beery
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATION OF EPITAXIALLY GROWN CHANNEL SELECTOR WITH MRAM DEVICE
- Publication number 20210065760
- Publication date Mar 4, 2021
- Spin Memory, Inc.
- Dafna Beery
- G11 - INFORMATION STORAGE
Information Patent Application
Patterned Silicide Structures and Methods of Manufacture
- Publication number 20200212296
- Publication date Jul 2, 2020
- SPIN MEMORY, INC.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL USING SELECTIVE EPITAXIAL VERTICAL CHANNEL MOS SELECTOR...
- Publication number 20200127052
- Publication date Apr 23, 2020
- Spin Memory, Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY MRAM INTEGRATION
- Publication number 20200013828
- Publication date Jan 9, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH DENSITY MRAM INTEGRATION
- Publication number 20200013827
- Publication date Jan 9, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...
- Publication number 20190355896
- Publication date Nov 21, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES INCLUDING MAGNETIC TUNNEL JUNCTIONS INTEGRATED WITH SELECTORS
- Publication number 20190214429
- Publication date Jul 11, 2019
- Spin Transfer Technologies, Inc.
- Kuk-Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING MAGNETIC TUNNEL JUNCTIONS INTEGRATED WITH SE...
- Publication number 20190214430
- Publication date Jul 11, 2019
- Spin Transfer Technologies, Inc.
- Kuk-Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ) USIN...
- Publication number 20190214551
- Publication date Jul 11, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING SHARED S...
- Publication number 20190206463
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CE...
- Publication number 20190206716
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL PERPENDICULAR MAGNETIC JUNCTION WITH THIN-FILM TR...
- Publication number 20190206934
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS

Andrew Walker

Person

Patents Grantslast 30 patents

Method and system for fin-based voltage clamp

Three dimensional perpendicular magnetic tunnel junction with thin...

Compact and efficient CMOS inverter

Patterned silicide structures and methods of manufacture

DRAM with selective epitaxial cell transistor

High density spin orbit torque magnetic random access memory

Selector transistor with continuously variable current drive

Selector transistor with metal replacement gate wordline

Three dimensional perpendicular magnetic tunnel junction with thin...

DRAM with selective epitaxial transistor and buried bitline

Compact and efficient CMOS inverter

DRAM with selective epitaxial cell transistor

Perpendicular magnetic tunnel junction memory cells having vertical...

Patterned silicide structures and methods of manufacture

Integration of epitaxially grown channel selector with two terminal...

Integration of epitaxially grown channel selector with MRAM device

High density MRAM integration

Vertically-strained silicon device for use with a perpendicular mag...

Vertical selector stt-MRAM architecture

Vertical selector STT-MRAM architecture

High density MRAM integration

Methods of forming perpendicular magnetic tunnel junction memory ce...

Method of making a three dimensional perpendicular magnetic tunnel...

Methods of forming perpendicular magnetic tunnel junction memory ce...

Perpendicular magnetic tunnel junction memory cells having shared s...

Annular vertical Si etched channel MOS devices

Devices including magnetic tunnel junctions integrated with selectors

Methods of fabricating magnetic tunnel junctions integrated with se...

Three dimensional perpendicular magnetic junction with thin-film tr...

Steep slope field-effect transistor (FET) for a perpendicular magne...

Patents Applicationslast 30 patents

METHOD AND SYSTEM FOR A FIN-BASED VOLTAGE CLAMP

NEGATIVE CHARGE EXTRACTION STRUCTURE FOR EDGE TERMINATION

METHOD AND SYSTEM FOR FIN-BASED VOLTAGE CLAMP

METHOD AND SYSTEM FOR ROUTING OF ELECTRICAL CONDUCTORS OVER NEUTRAL...

VERTICAL FIN-BASED FIELD EFFECT TRANSISTOR (FINFET) WITH CONNECTED...

VERTICAL FIN-BASED FIELD EFFECT TRANSISTOR (FINFET) WITH VARYING CO...

VERTICAL FIN-BASED FIELD EFFECT TRANSISTOR (FINFET) WITH NEUTRALIZE...

THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...

HIGH DENSITY SPIN ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY

COMPACT AND EFFICIENT CMOS INVERTER

DRAM WITH SELECTIVE EPITAXIAL CELL TRANSISTOR

Patterned Silicide Structures and Methods of Manufacture

SELECTOR TRANSISTOR WITH METAL REPLACEMENT GATE WORDLINE

COMPACT AND EFFICIENT CMOS INVERTER

DRAM WITH SELECTIVE EPITAXIAL TRANSISTOR AND BURIED BITLINE

DRAM WITH SELECTIVE EPITAXIAL CELL TRANSISTOR

SELECTOR TRANSISTOR WITH CONTINUOUSLY VARIABLE CURRENT DRIVE

INTEGRATION OF EPITAXIALLY GROWN CHANNEL SELECTOR WITH TWO TERMINAL...

INTEGRATION OF EPITAXIALLY GROWN CHANNEL SELECTOR WITH MRAM DEVICE

Patterned Silicide Structures and Methods of Manufacture

MEMORY CELL USING SELECTIVE EPITAXIAL VERTICAL CHANNEL MOS SELECTOR...

HIGH DENSITY MRAM INTEGRATION

HIGH DENSITY MRAM INTEGRATION

THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...

DEVICES INCLUDING MAGNETIC TUNNEL JUNCTIONS INTEGRATED WITH SELECTORS

METHODS OF FABRICATING MAGNETIC TUNNEL JUNCTIONS INTEGRATED WITH SE...

FABRICATION OF A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ) USIN...

PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING SHARED S...

METHODS OF FORMING PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CE...

THREE DIMENSIONAL PERPENDICULAR MAGNETIC JUNCTION WITH THIN-FILM TR...