ARKADII V. SAMOILOV

Person

Saratoga, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Use of CL2 and/or HCL during silicon epitaxial film formation
- Patent number 8,586,456
- Issue date Nov 19, 2013
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature etchant for treatment of silicon-containing surfaces
- Patent number 8,492,284
- Issue date Jul 23, 2013
- Applied Materials, Inc.
- Arkadii Samoilov
- B08 - CLEANING
Information Patent Grant
Etchant treatment processes for substrate surfaces and chamber surf...
- Patent number 8,445,389
- Issue date May 21, 2013
- Applied Materials, Inc.
- Ali Zojaji
- B08 - CLEANING
Information Patent Grant
Etchant treatment processes for substrate surfaces and chamber surf...
- Patent number 8,093,154
- Issue date Jan 10, 2012
- Applied Materials, Inc.
- Ali Zojaji
- B08 - CLEANING
Information Patent Grant
Use of CL2 and/or HCL during silicon epitaxial film formation
- Patent number 7,960,256
- Issue date Jun 14, 2011
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating waveguides
- Patent number 7,871,469
- Issue date Jan 18, 2011
- Dan Maydan
- G02 - OPTICS
Information Patent Grant
Formation and treatment of epitaxial layer containing silicon and c...
- Patent number 7,837,790
- Issue date Nov 23, 2010
- Applied Materials, Inc.
- Yihwan Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods to fabricate MOSFET devices using a selective deposition pr...
- Patent number 7,737,007
- Issue date Jun 15, 2010
- Applied Materials, Inc.
- Arkadii V. Samoilov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of Cl2 and/or HCl during silicon epitaxial film formation
- Patent number 7,732,305
- Issue date Jun 8, 2010
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of Cl2 and/or HCl during silicon epitaxial film formation
- Patent number 7,682,940
- Issue date Mar 23, 2010
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas manifolds for use during epitaxial film formation
- Patent number 7,674,337
- Issue date Mar 9, 2010
- Applied Materials, Inc.
- David Ishikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Pre-cleaning of substrates in epitaxy chambers
- Patent number 7,651,948
- Issue date Jan 26, 2010
- Applied Materials, Inc.
- Yihwan Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Carbon precursors for use during silicon epitaxial film formation
- Patent number 7,598,178
- Issue date Oct 6, 2009
- Applied Materials, Inc.
- Arkadii V. Samoilov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy process with alternating gas supply
- Patent number 7,572,715
- Issue date Aug 11, 2009
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy process with alternating gas supply
- Patent number 7,521,365
- Issue date Apr 21, 2009
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of selective deposition of heavily doped epitaxial SiGe
- Patent number 7,517,775
- Issue date Apr 14, 2009
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to fabricate MOSFET devices using a selective deposition pr...
- Patent number 7,439,142
- Issue date Oct 21, 2008
- Applied Materials, Inc.
- Arkadii V. Samoilov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy process with alternating gas supply
- Patent number 7,312,128
- Issue date Dec 25, 2007
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature etchant for treatment of silicon-containing surfaces
- Patent number 7,235,492
- Issue date Jun 26, 2007
- Applied Materials, Inc.
- Arkadii V. Samoilov
- B08 - CLEANING
Information Patent Grant
Methods of selective deposition of heavily doped epitaxial SiGe
- Patent number 7,166,528
- Issue date Jan 23, 2007
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to fabricate MOSFET devices using selective deposition process
- Patent number 7,132,338
- Issue date Nov 7, 2006
- Applied Materials, Inc.
- Arkadii V. Samoilov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for CVD process control for enhancing device performance
- Patent number 6,911,401
- Issue date Jun 28, 2005
- Applied Materials, Inc.
- Shahab Khandan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Waveguides such as SiGeC waveguides and method of fabricating the same
- Patent number 6,905,542
- Issue date Jun 14, 2005
- Arkadii V. Samoilov
- G02 - OPTICS
Information Patent Grant
Method of calibrating and using a semiconductor processing system
- Patent number 6,876,442
- Issue date Apr 5, 2005
- Applied Materials, Inc.
- Jean R. Vatus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating waveguides
- Patent number 6,770,134
- Issue date Aug 3, 2004
- Applied Materials, Inc.
- Dan Maydan
- G02 - OPTICS
Information Patent Grant
Process and apparatus for cleaning a silicon surface
- Patent number 6,494,959
- Issue date Dec 17, 2002
- Applied Materials, Inc.
- Arkadii V. Samoilov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside heating chamber for emissivity independent thermal processes
- Patent number 6,455,814
- Issue date Sep 24, 2002
- Applied Materials, Inc.
- Arkadii V. Samoilov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for CVD process control for enhancing device performance
- Patent number 6,342,453
- Issue date Jan 29, 2002
- Applied Materials, Inc.
- Shahab Khandan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
ETCHANT TREATMENT PROCESSES FOR SUBSTRATE SURFACES AND CHAMBER SURF...
- Publication number 20120108039
- Publication date May 3, 2012
- Ali Zojaji
- B08 - CLEANING
Information Patent Application
LOW TEMPERATURE ETCHANT FOR TREATMENT OF SILICON-CONTAINING SURFACES
- Publication number 20120070961
- Publication date Mar 22, 2012
- Applied Materials
- Arkadii V. Samoilov
- B08 - CLEANING
Information Patent Application
CLUSTER TOOL FOR EPITAXIAL FILM FORMATION
- Publication number 20110290176
- Publication date Dec 1, 2011
- Applied Materials, Inc.
- Arkadii V. Samoilov
- C30 - CRYSTAL GROWTH
Information Patent Application
USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION
- Publication number 20110230036
- Publication date Sep 22, 2011
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION
- Publication number 20100221902
- Publication date Sep 2, 2010
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PR...
- Publication number 20090011578
- Publication date Jan 8, 2009
- ARKADII V. SAMOILOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pre-cleaning of substrates in epitaxy chambers
- Publication number 20080245767
- Publication date Oct 9, 2008
- APPLIED MATERIALS, INC.
- Yihwan Kim
- C30 - CRYSTAL GROWTH
Information Patent Application
FORMATION AND TREATMENT OF EPITAXIAL LAYER CONTAINING SILICON AND C...
- Publication number 20080132018
- Publication date Jun 5, 2008
- APPLIED MATERIALS, INC.
- YIHWAN KIM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CARBON PRECURSORS FOR USE DURING SILICON EPITAXIAL FILM FORMATION
- Publication number 20080044932
- Publication date Feb 21, 2008
- ARKADII V. SAMOILOV
- C30 - CRYSTAL GROWTH
Information Patent Application
CLUSTER TOOL FOR EPITAXIAL FILM FORMATION
- Publication number 20070286956
- Publication date Dec 13, 2007
- APPLIED MATERIALS, INC.
- ARKADII V. SAMOILOV
- C30 - CRYSTAL GROWTH
Information Patent Application
GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION
- Publication number 20070259112
- Publication date Nov 8, 2007
- APPLIED MATERIALS, INC.
- David Ishikawa
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW TEMPERATURE ETCHANT FOR TREATMENT OF SILICON-CONTAINING SURFACES
- Publication number 20070224830
- Publication date Sep 27, 2007
- ARKADII V. SAMOILOV
- B08 - CLEANING
Information Patent Application
SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY
- Publication number 20070207596
- Publication date Sep 6, 2007
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED VACUUM METROLOGY FOR CLUSTER TOOL
- Publication number 20070196011
- Publication date Aug 23, 2007
- Damon K. Cox
- G01 - MEASURING TESTING
Information Patent Application
CLUSTER TOOL FOR ADVANCED FRONT-END PROCESSING
- Publication number 20070134821
- Publication date Jun 14, 2007
- Randhir Thakur
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PR...
- Publication number 20070082451
- Publication date Apr 12, 2007
- ARKADII V. SAMOILOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of Cl2 and/or HCl during silicon epitaxial film formation
- Publication number 20060260538
- Publication date Nov 23, 2006
- APPLIED MATERIALS, INC.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe
- Publication number 20060234488
- Publication date Oct 19, 2006
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY
- Publication number 20060216876
- Publication date Sep 28, 2006
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low temperature etchant for treatment of silicon-containing surfaces
- Publication number 20060169668
- Publication date Aug 3, 2006
- APPLIED MATERIALS, INC.
- Arkadii V. Samoilov
- B08 - CLEANING
Information Patent Application
Etchant treatment processes for substrate surfaces and chamber surf...
- Publication number 20060169669
- Publication date Aug 3, 2006
- APPLIED MATERIALS, INC.
- Ali Zojaji
- B08 - CLEANING
Information Patent Application
Selective epitaxy process with alternating gas supply
- Publication number 20060115934
- Publication date Jun 1, 2006
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of CL2 and/or HCL during silicon epitaxial film formation
- Publication number 20060115933
- Publication date Jun 1, 2006
- APPLIED MATERIALS, INC.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of selective deposition of heavily doped epitaxial SiGe
- Publication number 20050079691
- Publication date Apr 14, 2005
- APPLIED MATERIALS, INC.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods to fabricate MOSFET devices using selective deposition process
- Publication number 20050079692
- Publication date Apr 14, 2005
- APPLIED MATERIALS, INC.
- Arkadii V. Samoilov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating waveguides
- Publication number 20040237883
- Publication date Dec 2, 2004
- Dan Maydan
- G02 - OPTICS
Information Patent Application
Method for CVD process control for enhancing device performance
- Publication number 20040133361
- Publication date Jul 8, 2004
- Shahab Khandan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for fabricating an ultra shallow junction of a field effect...
- Publication number 20040072446
- Publication date Apr 15, 2004
- APPLIED MATERIALS, INC.
- Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and method for delivering process gas to a substrate proc...
- Publication number 20040050325
- Publication date Mar 18, 2004
- Arkadii V. Samoilov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of calibrating and using a semiconductor processing system
- Publication number 20030151733
- Publication date Aug 14, 2003
- APPLIED MATERIALS, INC.
- Jean R. Vatus
- H01 - BASIC ELECTRIC ELEMENTS

ARKADII V. SAMOILOV

Person

Patents Grantslast 30 patents

Use of CL2 and/or HCL during silicon epitaxial film formation

Low temperature etchant for treatment of silicon-containing surfaces

Etchant treatment processes for substrate surfaces and chamber surf...

Etchant treatment processes for substrate surfaces and chamber surf...

Use of CL2 and/or HCL during silicon epitaxial film formation

Method for fabricating waveguides

Formation and treatment of epitaxial layer containing silicon and c...

Methods to fabricate MOSFET devices using a selective deposition pr...

Use of Cl2 and/or HCl during silicon epitaxial film formation

Use of Cl2 and/or HCl during silicon epitaxial film formation

Gas manifolds for use during epitaxial film formation

Pre-cleaning of substrates in epitaxy chambers

Carbon precursors for use during silicon epitaxial film formation

Selective epitaxy process with alternating gas supply

Selective epitaxy process with alternating gas supply

Methods of selective deposition of heavily doped epitaxial SiGe

Methods to fabricate MOSFET devices using a selective deposition pr...

Selective epitaxy process with alternating gas supply

Low temperature etchant for treatment of silicon-containing surfaces

Methods of selective deposition of heavily doped epitaxial SiGe

Methods to fabricate MOSFET devices using selective deposition process

Method for CVD process control for enhancing device performance

Waveguides such as SiGeC waveguides and method of fabricating the same

Method of calibrating and using a semiconductor processing system

Method for fabricating waveguides

Process and apparatus for cleaning a silicon surface

Backside heating chamber for emissivity independent thermal processes

Method for CVD process control for enhancing device performance

Patents Applicationslast 30 patents

ETCHANT TREATMENT PROCESSES FOR SUBSTRATE SURFACES AND CHAMBER SURF...

LOW TEMPERATURE ETCHANT FOR TREATMENT OF SILICON-CONTAINING SURFACES

CLUSTER TOOL FOR EPITAXIAL FILM FORMATION

USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION

USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION

METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PR...

Pre-cleaning of substrates in epitaxy chambers

FORMATION AND TREATMENT OF EPITAXIAL LAYER CONTAINING SILICON AND C...

CARBON PRECURSORS FOR USE DURING SILICON EPITAXIAL FILM FORMATION

CLUSTER TOOL FOR EPITAXIAL FILM FORMATION

GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION

LOW TEMPERATURE ETCHANT FOR TREATMENT OF SILICON-CONTAINING SURFACES

SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY

INTEGRATED VACUUM METROLOGY FOR CLUSTER TOOL

CLUSTER TOOL FOR ADVANCED FRONT-END PROCESSING

METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PR...

Use of Cl2 and/or HCl during silicon epitaxial film formation

METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe

SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY

Low temperature etchant for treatment of silicon-containing surfaces

Etchant treatment processes for substrate surfaces and chamber surf...

Selective epitaxy process with alternating gas supply

Use of CL2 and/or HCL during silicon epitaxial film formation

Methods of selective deposition of heavily doped epitaxial SiGe

Methods to fabricate MOSFET devices using selective deposition process

Method for fabricating waveguides

Method for CVD process control for enhancing device performance

Method for fabricating an ultra shallow junction of a field effect...

Apparatus and method for delivering process gas to a substrate proc...

Method of calibrating and using a semiconductor processing system