Asanga H. Perera

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanosheet transistors with reduced source/drain resistance and asso...
- Patent number 12,363,936
- Issue date Jul 15, 2025
- NXP USA, INC.
- Mark Douglas Hall
Information Patent Grant
Split-gate non-volatile memory (NVM) cell and method therefor
- Patent number 9,728,410
- Issue date Aug 8, 2017
- NXP USA, INC.
- Craig T. Swift
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming different voltage devices with high-k metal gate
- Patent number 9,368,499
- Issue date Jun 14, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a non-volatile memory (NVM) cell and a logic transis...
- Patent number 9,318,568
- Issue date Apr 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a polysilicon nanocrystal thin film storage bitcell...
- Patent number 9,275,864
- Issue date Mar 1, 2016
- Freescale Semiconductor,INC
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated split gate non-volatile memory cell and logic device
- Patent number 9,252,246
- Issue date Feb 2, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming different voltage devices with high-K metal gate
- Patent number 9,142,566
- Issue date Sep 22, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for charge storage isolation in split-gate m...
- Patent number 9,136,360
- Issue date Sep 15, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high-k and metal gate integration usi...
- Patent number 9,136,129
- Issue date Sep 15, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high-k and metal gate integration usi...
- Patent number 9,129,855
- Issue date Sep 8, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a non-volatile memory (NVM) cell and a logic transis...
- Patent number 9,105,748
- Issue date Aug 11, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated split gate non-volatile memory cell and logic structure
- Patent number 9,082,650
- Issue date Jul 14, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory bitcell with inlaid high k metal select gate
- Patent number 9,082,837
- Issue date Jul 14, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gate strapping in split-gate memory cell with inlaid gate
- Patent number 8,969,940
- Issue date Mar 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Jane A Yater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high-K and metal gate integration usi...
- Patent number 8,901,632
- Issue date Dec 2, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) cell, high voltage transistor, and high-K...
- Patent number 8,877,585
- Issue date Nov 4, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high-k and metal gate integration usi...
- Patent number 8,871,598
- Issue date Oct 28, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a trench isolation structure in an integrated ci...
- Patent number 6,524,931
- Issue date Feb 25, 2003
- Motorola, Inc.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device
- Patent number 6,362,057
- Issue date Mar 26, 2002
- Motorola, Inc.
- William J. Taylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a trench isolation structure in an integrated ci...
- Patent number 5,786,263
- Issue date Jul 28, 1998
- Motorola, Inc.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static-random-access memory cell with trench transistor and enhance...
- Patent number 5,698,893
- Issue date Dec 16, 1997
- Motorola, Inc.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step planarization process using polishing at two different p...
- Patent number 5,665,202
- Issue date Sep 9, 1997
- Motorola, Inc.
- Chitra K. Subramanian
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET WITH GATE EXTENSION
- Publication number 20240014324
- Publication date Jan 11, 2024
- NXP B.V.
- Viet Thanh Dinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanosheet Transistors with Reduced Source/Drain Resistance and Asso...
- Publication number 20230290862
- Publication date Sep 14, 2023
- NXP USA, Inc.
- Mark Douglas Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE NON-VOLATILE MEMORY (NVM) CELL AND METHOD THEREFOR
- Publication number 20160099153
- Publication date Apr 7, 2016
- FREESCALE SEMICONDUCTOR, INC.
- CRAIG T. SWIFT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF A NON-VOLATILE MEMORY (NVM) CELL AND A LOGIC TRANSIS...
- Publication number 20160087058
- Publication date Mar 24, 2016
- ASANGA H. PERERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Different Voltage Devices with High-K Metal Gate
- Publication number 20150380408
- Publication date Dec 31, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USI...
- Publication number 20150091079
- Publication date Apr 2, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USI...
- Publication number 20150093864
- Publication date Apr 2, 2015
- FREESCALE SEMICONDUCTOR, INC.
- ASANGA H. PERERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Different Voltage Devices with High-K Metal Gate
- Publication number 20150069524
- Publication date Mar 12, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Form a Polysilicon Nanocrystal Thin Film Storage Bitcell...
- Publication number 20150054044
- Publication date Feb 26, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC STRUCTURE
- Publication number 20150054049
- Publication date Feb 26, 2015
- Asanga H. PERERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC DEVICE
- Publication number 20150054050
- Publication date Feb 26, 2015
- ASANGA H. PERERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile Memory Bitcell With Inlaid High K Metal Select Gate
- Publication number 20150041875
- Publication date Feb 12, 2015
- Freescale Seminconductor, Inc.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS

Asanga H. Perera

Person

Patents Grantslast 30 patents

Nanosheet transistors with reduced source/drain resistance and asso...

Split-gate non-volatile memory (NVM) cell and method therefor

Method of forming different voltage devices with high-k metal gate

Integration of a non-volatile memory (NVM) cell and a logic transis...

Method to form a polysilicon nanocrystal thin film storage bitcell...

Integrated split gate non-volatile memory cell and logic device

Method of forming different voltage devices with high-K metal gate

Methods and structures for charge storage isolation in split-gate m...

Non-volatile memory (NVM) and high-k and metal gate integration usi...

Non-volatile memory (NVM) and high-k and metal gate integration usi...

Integration of a non-volatile memory (NVM) cell and a logic transis...

Integrated split gate non-volatile memory cell and logic structure

Nonvolatile memory bitcell with inlaid high k metal select gate

Method of gate strapping in split-gate memory cell with inlaid gate

Non-volatile memory (NVM) and high-K and metal gate integration usi...

Non-volatile memory (NVM) cell, high voltage transistor, and high-K...

Non-volatile memory (NVM) and high-k and metal gate integration usi...

Method for forming a trench isolation structure in an integrated ci...

Method for forming a semiconductor device

Method for forming a trench isolation structure in an integrated ci...

Static-random-access memory cell with trench transistor and enhance...

Multi-step planarization process using polishing at two different p...

Patents Applicationslast 30 patents

FINFET WITH GATE EXTENSION

Nanosheet Transistors with Reduced Source/Drain Resistance and Asso...

SPLIT-GATE NON-VOLATILE MEMORY (NVM) CELL AND METHOD THEREFOR

INTEGRATION OF A NON-VOLATILE MEMORY (NVM) CELL AND A LOGIC TRANSIS...

Method of Forming Different Voltage Devices with High-K Metal Gate

NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USI...

NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USI...

Method of Forming Different Voltage Devices with High-K Metal Gate

Method to Form a Polysilicon Nanocrystal Thin Film Storage Bitcell...

INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC STRUCTURE

INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC DEVICE

Nonvolatile Memory Bitcell With Inlaid High K Metal Select Gate