Brian J. Greene

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Substrate-less vertical diode integrated circuit structures
- Patent number 12,154,898
- Issue date Nov 26, 2024
- Intel Corporation
- Avyaya Jayanthinarasimham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures including varactors
- Patent number 11,869,987
- Issue date Jan 9, 2024
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures including varactors
- Patent number 11,417,781
- Issue date Aug 16, 2022
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked-gate transistors
- Patent number 11,404,415
- Issue date Aug 2, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact depth control
- Patent number 10,991,796
- Issue date Apr 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Lin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy fill scheme for use with passive devices
- Patent number 10,867,912
- Issue date Dec 15, 2020
- GLOBALFOUNDRIES Inc.
- Jaladhi Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structures connected with the lowest metallization levels in a...
- Patent number 10,796,973
- Issue date Oct 6, 2020
- GLOBALFOUNDRIES Inc.
- Mankyu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure leveraging the lowest metallization level of an inte...
- Patent number 10,790,204
- Issue date Sep 29, 2020
- GLOBALFOUNDRIES Inc.
- Mankyu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel region dopant control in fin field effect transistor
- Patent number 10,672,907
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Murshed M. Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip resistors with direct wiring connections
- Patent number 10,566,411
- Issue date Feb 18, 2020
- GLOBALFOUNDRIES Inc.
- Atsushi Ogino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric formation of epi semiconductor material in source/drain...
- Patent number 10,269,932
- Issue date Apr 23, 2019
- GLOBALFOUNDRIES Inc.
- Ankur Arya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implant after through-silicon via (TSV) etch to getter mobile ions
- Patent number 10,170,337
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Christopher Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin fabrication process with dual shallow trench isolation and tuna...
- Patent number 10,083,878
- Issue date Sep 25, 2018
- GLOBALFOUNDRIES Inc.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with decreased pitch contact to active regions
- Patent number 10,074,571
- Issue date Sep 11, 2018
- GLOBALFOUNDRIES INC.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and IC structure for increasing pitch between gates
- Patent number 9,991,167
- Issue date Jun 5, 2018
- GLOBALFOUNDRIES Inc.
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor strap connection structure and fabrication method
- Patent number 9,960,168
- Issue date May 1, 2018
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage and well implantation method for semiconductor de...
- Patent number 9,780,002
- Issue date Oct 3, 2017
- GLOBALFOUNDRIES Inc.
- Xintuo Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with constrained source-drain epitaxial region
- Patent number 9,673,197
- Issue date Jun 6, 2017
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with constrained source-drain epitaxial region
- Patent number 9,536,879
- Issue date Jan 3, 2017
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of material on source/drain regions of FinFET stru...
- Patent number 9,536,985
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with constrained source-drain epitaxial region
- Patent number 9,443,854
- Issue date Sep 13, 2016
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged source drain epitaxy
- Patent number 9,437,496
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming channel region dopant control in fin field effect...
- Patent number 9,379,185
- Issue date Jun 28, 2016
- International Business Machines Corporation
- Murshed M. Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor process temperature optimization
- Patent number 9,349,609
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tucked active region without dummy poly for performance boost and v...
- Patent number 9,337,338
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged fin structures for finFET devices
- Patent number 9,312,274
- Issue date Apr 12, 2016
- GLOBALFOUNDRIES Inc.
- Andres Bryant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-generating structure for semiconductor-on-insulator devices
- Patent number 9,305,999
- Issue date Apr 5, 2016
- GLOBALFOUNDRIES Inc.
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Constrained epitaxial source/drain regions on semiconductor-on-insu...
- Patent number 9,299,780
- Issue date Mar 29, 2016
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Constrained epitaxial source/drain regions on semiconductor-on-insu...
- Patent number 9,252,215
- Issue date Feb 2, 2016
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure and method to adjust threshold voltage in a FinFET...
- Patent number 9,171,954
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES U.S. 2 LLC
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BURIED LOW-K DIELECTRIC TO PROTECT SOURCE/DRAIN TO GATE CONNECTION
- Publication number 20240334669
- Publication date Oct 3, 2024
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON-BASED TRANSISTORS WITH ETCH STOP LAYER TO ASSIST SUBFIN...
- Publication number 20240290835
- Publication date Aug 29, 2024
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT, AND SOURCE AND DRAIN CONTACTS
- Publication number 20240222447
- Publication date Jul 4, 2024
- Intel Corporation
- Reken Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN CONTACTS HAVING...
- Publication number 20240178273
- Publication date May 30, 2024
- Intel Corporation
- Chiao-Ti HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE CHANNEL DIODE STRUCTURE INCLUDING SUB-FIN
- Publication number 20240088132
- Publication date Mar 14, 2024
- Intel Corporation
- Nicholas A. Thomson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH DIODES INTEGRATED IN SUBFINS
- Publication number 20230420443
- Publication date Dec 28, 2023
- Nicholas A. Thomson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE PERFORMANCE TUNING BY DEEP TRENCH VIA (DVB) PROXIMITY EFFECT...
- Publication number 20230317594
- Publication date Oct 5, 2023
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING DIFFERENTIATED CHANNEL SIZING
- Publication number 20230317808
- Publication date Oct 5, 2023
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE PROCESSING OF FINS IN FIN BASED TRANSISTOR DEVICES
- Publication number 20230307449
- Publication date Sep 28, 2023
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE END CAP AND BOUNDARY PLACEMENT IN TRANSISTOR STRUCTURES FOR N-...
- Publication number 20230071699
- Publication date Mar 9, 2023
- Intel Corporation
- Andrew Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-LESS LATERAL DIODE INTEGRATED CIRCUIT STRUCTURES
- Publication number 20220415925
- Publication date Dec 29, 2022
- Intel Corporation
- Nicholas THOMSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-LESS SILICON CONTROLLED RECTIFIER (SCR) INTEGRATED CIRCUI...
- Publication number 20220415881
- Publication date Dec 29, 2022
- Intel Corporation
- Rui MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-LESS NANOWIRE-BASED LATERAL DIODE INTEGRATED CIRCUIT STRU...
- Publication number 20220416022
- Publication date Dec 29, 2022
- Intel Corporation
- Nicholas THOMSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES INCLUDING VARACTORS
- Publication number 20220344519
- Publication date Oct 27, 2022
- Intel Corporation
- Ayan KAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIPOLE THRESHOLD VOLTAGE TUNING FOR HIGH VOLTAGE TRANSISTOR STACKS
- Publication number 20220199472
- Publication date Jun 23, 2022
- Intel Corporation
- Robin Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-LESS VERTICAL DIODE INTEGRATED CIRCUIT STRUCTURES
- Publication number 20220199615
- Publication date Jun 23, 2022
- Intel Corporation
- Avyaya JAYANTHINARASIMHAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-LESS ELECTROSTATIC DISCHARGE (ESD) INTEGRATED CIRCUIT STR...
- Publication number 20220199610
- Publication date Jun 23, 2022
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-FREE INTEGRATED CIRCUIT STRUCTURES
- Publication number 20220102385
- Publication date Mar 31, 2022
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTORS AND METHODS OF FABRICATION
- Publication number 20210408289
- Publication date Dec 30, 2021
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES INCLUDING VARACTORS
- Publication number 20210305436
- Publication date Sep 30, 2021
- Intel Corporation
- Ayan KAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED-GATE TRANSISTORS
- Publication number 20210005605
- Publication date Jan 7, 2021
- GLOBALFOUNDRIES INC.
- Wenjun LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY FILL SCHEME FOR USE WITH PASSIVE DEVICES
- Publication number 20200227350
- Publication date Jul 16, 2020
- GLOBALFOUNDRIES INC.
- Jaladhi Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACT DEPTH CONTROL
- Publication number 20200203480
- Publication date Jun 25, 2020
- GLOBALFOUNDRIES INC.
- Lin HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE LEVERAGING THE LOWEST METALLIZATION LEVEL OF AN INTE...
- Publication number 20200152530
- Publication date May 14, 2020
- GLOBALFOUNDRIES INC.
- Mankyu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURES CONNECTED WITH THE LOWEST METALLIZATION LEVELS IN A...
- Publication number 20200152531
- Publication date May 14, 2020
- GLOBALFOUNDRIES INC.
- Mankyu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ON-CHIP RESISTORS WITH DIRECT WIRING CONNECTIONS
- Publication number 20190181215
- Publication date Jun 13, 2019
- GLOBALFOUNDRIES INC.
- Atsushi Ogino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH DECREASED PITCH CONTACT TO ACTIVE REGIONS
- Publication number 20180261512
- Publication date Sep 13, 2018
- GLOBALFOUNDRIES INC.
- Brian J. GREENE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND IC STRUCTURE FOR INCREASING PITCH BETWEEN GATES
- Publication number 20170287829
- Publication date Oct 5, 2017
- GLOBALFOUNDRIES INC.
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANT AFTER THROUGH-SILICON VIA (TSV) ETCH TO GETTER MOBILE IONS
- Publication number 20170200620
- Publication date Jul 13, 2017
- International Business Machines Corporation
- Christopher Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH CONSTRAINED SOURCE-DRAIN EPITAXIAL REGION
- Publication number 20160329428
- Publication date Nov 10, 2016
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS

Brian J. Greene

Person

Patents Grantslast 30 patents

Substrate-less vertical diode integrated circuit structures

Gate-all-around integrated circuit structures including varactors

Gate-all-around integrated circuit structures including varactors

Stacked-gate transistors

Source/drain contact depth control

Dummy fill scheme for use with passive devices

Test structures connected with the lowest metallization levels in a...

Test structure leveraging the lowest metallization level of an inte...

Channel region dopant control in fin field effect transistor

On-chip resistors with direct wiring connections

Asymmetric formation of epi semiconductor material in source/drain...

Implant after through-silicon via (TSV) etch to getter mobile ions

Fin fabrication process with dual shallow trench isolation and tuna...

Device with decreased pitch contact to active regions

Method and IC structure for increasing pitch between gates

Capacitor strap connection structure and fabrication method

Threshold voltage and well implantation method for semiconductor de...

FinFET with constrained source-drain epitaxial region

FinFET with constrained source-drain epitaxial region

Epitaxial growth of material on source/drain regions of FinFET stru...

FinFET with constrained source-drain epitaxial region

Merged source drain epitaxy

Method of forming channel region dopant control in fin field effect...

Semiconductor process temperature optimization

Tucked active region without dummy poly for performance boost and v...

Merged fin structures for finFET devices

Stress-generating structure for semiconductor-on-insulator devices

Constrained epitaxial source/drain regions on semiconductor-on-insu...

Constrained epitaxial source/drain regions on semiconductor-on-insu...

FinFET structure and method to adjust threshold voltage in a FinFET...

Patents Applicationslast 30 patents

BURIED LOW-K DIELECTRIC TO PROTECT SOURCE/DRAIN TO GATE CONNECTION

NANORIBBON-BASED TRANSISTORS WITH ETCH STOP LAYER TO ASSIST SUBFIN...

GATE CUT, AND SOURCE AND DRAIN CONTACTS

INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN CONTACTS HAVING...

WIDE CHANNEL DIODE STRUCTURE INCLUDING SUB-FIN

INTEGRATED CIRCUIT DEVICES WITH DIODES INTEGRATED IN SUBFINS

DEVICE PERFORMANCE TUNING BY DEEP TRENCH VIA (DVB) PROXIMITY EFFECT...

INTEGRATED CIRCUIT STRUCTURES HAVING DIFFERENTIATED CHANNEL SIZING

BACKSIDE PROCESSING OF FINS IN FIN BASED TRANSISTOR DEVICES

GATE END CAP AND BOUNDARY PLACEMENT IN TRANSISTOR STRUCTURES FOR N-...

SUBSTRATE-LESS LATERAL DIODE INTEGRATED CIRCUIT STRUCTURES

SUBSTRATE-LESS SILICON CONTROLLED RECTIFIER (SCR) INTEGRATED CIRCUI...

SUBSTRATE-LESS NANOWIRE-BASED LATERAL DIODE INTEGRATED CIRCUIT STRU...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES INCLUDING VARACTORS

DIPOLE THRESHOLD VOLTAGE TUNING FOR HIGH VOLTAGE TRANSISTOR STACKS

SUBSTRATE-LESS VERTICAL DIODE INTEGRATED CIRCUIT STRUCTURES

SUBSTRATE-LESS ELECTROSTATIC DISCHARGE (ESD) INTEGRATED CIRCUIT STR...

SUBSTRATE-FREE INTEGRATED CIRCUIT STRUCTURES

NANOWIRE TRANSISTORS AND METHODS OF FABRICATION

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES INCLUDING VARACTORS

STACKED-GATE TRANSISTORS

DUMMY FILL SCHEME FOR USE WITH PASSIVE DEVICES

SOURCE/DRAIN CONTACT DEPTH CONTROL

TEST STRUCTURE LEVERAGING THE LOWEST METALLIZATION LEVEL OF AN INTE...

TEST STRUCTURES CONNECTED WITH THE LOWEST METALLIZATION LEVELS IN A...

ON-CHIP RESISTORS WITH DIRECT WIRING CONNECTIONS

DEVICE WITH DECREASED PITCH CONTACT TO ACTIVE REGIONS

METHOD AND IC STRUCTURE FOR INCREASING PITCH BETWEEN GATES

IMPLANT AFTER THROUGH-SILICON VIA (TSV) ETCH TO GETTER MOBILE IONS

FINFET WITH CONSTRAINED SOURCE-DRAIN EPITAXIAL REGION