Chang-Kiang Kuo

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Random access memory cell with a capacitor
- Patent number 5,434,438
- Issue date Jul 18, 1995
- Texas Instruments Inc.
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Random access memory cell with implanted capacitor region
- Patent number 5,168,075
- Issue date Dec 1, 1992
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Random access memory cell with implanted capacitor region
- Patent number 4,827,448
- Issue date May 2, 1989
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Random access MOS/memory cell with capacitor and transistor formed...
- Patent number 4,613,889
- Issue date Sep 23, 1986
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
High density, electrically erasable, floating gate memory cell
- Patent number 4,561,004
- Issue date Dec 24, 1985
- Texas Instruments
- Chang-Kiang Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically erasable programmable MNOS read only memory
- Patent number 4,554,643
- Issue date Nov 19, 1985
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making high density dynamic memory cell
- Patent number 4,536,941
- Issue date Aug 27, 1985
- Chang-Kiang Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random access MOS memory cell using double level polysilicon
- Patent number 4,467,450
- Issue date Aug 21, 1984
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Post-metal programmable MOS read only memory
- Patent number 4,390,971
- Issue date Jun 28, 1983
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Closely-spaced double level conductors for MOS read only
- Patent number 4,385,432
- Issue date May 31, 1983
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
High current static MOS output buffer circuit for power-down mode o...
- Patent number 4,386,286
- Issue date May 31, 1983
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of making a metal programmable MOS read only memory device
- Patent number 4,384,399
- Issue date May 24, 1983
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
High density electrically programmable ROM
- Patent number 4,377,818
- Issue date Mar 22, 1983
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
High density dynamic memory cell
- Patent number 4,376,983
- Issue date Mar 15, 1983
- Texas Instruments Incorporated
- Shyh-Chang Tsaur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high density memory cells with improved metal-to-s...
- Patent number 4,372,031
- Issue date Feb 8, 1983
- Texas Instruments Incorporated
- Shyh-Chang Tsaur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically erasable programmable MNOS read only memory
- Patent number 4,342,099
- Issue date Jul 27, 1982
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Implant programmable metal gate MOS read only memory
- Patent number 4,342,100
- Issue date Jul 27, 1982
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
High density, electrically erasable, floating gate memory cell
- Patent number 4,317,272
- Issue date Mar 2, 1982
- Texas Instruments Incorporated
- Chang-kiang Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making implant programmable metal gate MOS read only memory
- Patent number 4,294,001
- Issue date Oct 13, 1981
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making post-metal programmable MOS read only memory
- Patent number 4,290,184
- Issue date Sep 22, 1981
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
High density electrically programmable ROM
- Patent number 4,258,466
- Issue date Mar 31, 1981
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Random access memory cell with different capacitor and transistor o...
- Patent number 4,240,092
- Issue date Dec 16, 1980
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making implant programmable N-channel ROM
- Patent number 4,230,504
- Issue date Oct 28, 1980
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Random access MOS memory cell using double level polysilicon
- Patent number 4,225,945
- Issue date Sep 30, 1980
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
VMOS Read only memory
- Patent number 4,198,693
- Issue date Apr 15, 1980
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple dummy cell layout for MOS random access memory
- Patent number 4,198,697
- Issue date Apr 15, 1980
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Median spaced dummy cell layout for MOS random access memory
- Patent number 4,195,357
- Issue date Mar 25, 1980
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitive means for controlling threshold voltages in insulated ga...
- Patent number 4,035,662
- Issue date Jul 12, 1977
- Texas Instruments Incorporated
- Chang - Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
High density, high speed random access read-write memory
- Patent number 3,940,747
- Issue date Feb 24, 1976
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE

Chang-Kiang Kuo

Person

Patents Grantslast 30 patents

Random access memory cell with a capacitor

Random access memory cell with implanted capacitor region

Random access memory cell with implanted capacitor region

Random access MOS/memory cell with capacitor and transistor formed...

High density, electrically erasable, floating gate memory cell

Electrically erasable programmable MNOS read only memory

Method of making high density dynamic memory cell

Random access MOS memory cell using double level polysilicon

Post-metal programmable MOS read only memory

Closely-spaced double level conductors for MOS read only

High current static MOS output buffer circuit for power-down mode o...

Method of making a metal programmable MOS read only memory device

High density electrically programmable ROM

High density dynamic memory cell

Method of making high density memory cells with improved metal-to-s...

Electrically erasable programmable MNOS read only memory

Implant programmable metal gate MOS read only memory

High density, electrically erasable, floating gate memory cell

Method of making implant programmable metal gate MOS read only memory

Method of making post-metal programmable MOS read only memory

High density electrically programmable ROM

Random access memory cell with different capacitor and transistor o...

Method of making implant programmable N-channel ROM

Random access MOS memory cell using double level polysilicon

VMOS Read only memory

Multiple dummy cell layout for MOS random access memory

Median spaced dummy cell layout for MOS random access memory

Capacitive means for controlling threshold voltages in insulated ga...

High density, high speed random access read-write memory