Chanro Park

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
MRAM top electrode structure with liner layer
- Patent number 12,369,494
- Issue date Jul 22, 2025
- International Business Machines Corporation
- Hsueh-Chung Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Scaled 2T DRAM
- Patent number 12,362,004
- Issue date Jul 15, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal capacitor structure with enlarged capacitor area
- Patent number 12,356,638
- Issue date Jul 8, 2025
- Chanro Park
Information Patent Grant
Copper interconnects with self-aligned hourglass-shaped metal cap
- Patent number 12,341,100
- Issue date Jun 24, 2025
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin stack including tensile-strained and compressively strained fin...
- Patent number 12,336,279
- Issue date Jun 17, 2025
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Grant
CPP-agnostic source-drain contact formation for gate-all-around dev...
- Patent number 12,328,916
- Issue date Jun 10, 2025
- International Business Machines Corporation
- Julien Frougier
Information Patent Grant
Spin-based gate-all-around transistors
- Patent number 12,324,197
- Issue date Jun 3, 2025
- International Business Machines Corporation
- Julien Frougier
Information Patent Grant
Fork sheet device with better electrostatic control
- Patent number 12,324,234
- Issue date Jun 3, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing copper line resistance
- Patent number 12,315,807
- Issue date May 27, 2025
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory structures with stacked transistors
- Patent number 12,317,514
- Issue date May 27, 2025
- International Business Machines Corporation
- Min Gyu Sung
Information Patent Grant
Isolation pillar structures for stacked device structures
- Patent number 12,310,064
- Issue date May 20, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Grant
Nanosheet transistor devices with different active channel widths
- Patent number 12,310,061
- Issue date May 20, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Grant
Top via patterning using metal as hard mask and via conductor
- Patent number 12,261,056
- Issue date Mar 25, 2025
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hard mask removal without damaging top epitaxial layer
- Patent number 12,243,770
- Issue date Mar 4, 2025
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 12,224,203
- Issue date Feb 11, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field-effect transistors
- Patent number 12,183,740
- Issue date Dec 31, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked FET with independent gate control
- Patent number 12,176,345
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to pattern pitch lines
- Patent number 12,148,617
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random-access memory cell
- Patent number 12,150,310
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subtractive metal etch with improved isolation for BEOL interconnec...
- Patent number 12,142,562
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistors with self-aligned gate cut
- Patent number 12,107,014
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistors having end portions of nan...
- Patent number 12,094,972
- Issue date Sep 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistor having a wrap-around gate with bot...
- Patent number 12,094,949
- Issue date Sep 17, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Beol tip-to-tip shorting and time dependent dielectric breakdown
- Patent number 12,087,624
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic fuse structure embedded in top via
- Patent number 12,062,609
- Issue date Aug 13, 2024
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top via interconnects without barrier metal between via and above line
- Patent number 12,057,395
- Issue date Aug 6, 2024
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with power rail disposed under active gate
- Patent number 12,046,643
- Issue date Jul 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BEOL etch stop layer without capacitance penalty
- Patent number 12,027,416
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned top contact for vertical transistor
- Patent number 12,009,422
- Issue date Jun 11, 2024
- International Business Machines Corporation
- ChoongHyun Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTERCONNECT WITH TOPVIA
- Publication number 20250226319
- Publication date Jul 10, 2025
- International Business Machines Corporation
- Gideon Oyibo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT STRUCTURE FOR TRANSISTORS
- Publication number 20250203918
- Publication date Jun 19, 2025
- International Business Machines Corporation
- Chanro Park
Information Patent Application
BACKSIDE GATE CONTACT AND BACKSIDE CROSS-COUPLE CONNECT
- Publication number 20250194153
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGLED EPITAXY CUT
- Publication number 20250194249
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Application
STACKED FET POWER DELIVERY NETWORK FORMATION
- Publication number 20250157928
- Publication date May 15, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER HAVING A CURVED PORTION
- Publication number 20250133799
- Publication date Apr 24, 2025
- International Business Machines Corporation
- Susan Ng Emans
Information Patent Application
ANGLED GATE CUT REGION
- Publication number 20250132161
- Publication date Apr 24, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATE SRAM CUT WITH BACKSIDE CONTACT
- Publication number 20250126768
- Publication date Apr 17, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Application
CO-INTEGRATION OF S/D METAL CONTACT CUT AND WRAP-AROUND-CONTACT
- Publication number 20250126838
- Publication date Apr 17, 2025
- International Business Machines Corporation
- Julien Frougier
Information Patent Application
NANOSHEET DEVICE WITH ALIGNED ISOLATION AND EPITAXIAL GROWTH
- Publication number 20250098198
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Julien Frougier
Information Patent Application
WRAP-AROUND MIDDLE-OF-LINE CONTACT WITH BACKSIDE SOURCE/DRAIN CUT F...
- Publication number 20250079309
- Publication date Mar 6, 2025
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION
- Publication number 20250072116
- Publication date Feb 27, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE
- Publication number 20250056849
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL PATTERNING AND MIDDLE-OF-LINE SELF-ALIGNED CONT...
- Publication number 20250031414
- Publication date Jan 23, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM FORMATION FOR VERTICAL FET TRANSISTOR WITH BACKSIDE CONTACT
- Publication number 20250008719
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE
- Publication number 20240429096
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATIO...
- Publication number 20240429280
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)
- Publication number 20240421064
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR BACKSIDE ISOLATION FEATURE FOR MERGED EPITAXY
- Publication number 20240420990
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT WITH PROTRUDING SOURCE/DRAIN
- Publication number 20240413201
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED BACKSIDE CONTACT
- Publication number 20240413214
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...
- Publication number 20240404950
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED 2T DRAM
- Publication number 20240386943
- Publication date Nov 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- G11 - INFORMATION STORAGE
Information Patent Application
NANOWIRE FLASH MEMORY WITH SEPARATED SOURCE/DRAIN REGIONS
- Publication number 20240357822
- Publication date Oct 24, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG
- Publication number 20240347533
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...
- Publication number 20240339538
- Publication date Oct 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES
- Publication number 20240332082
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC GATE CONTACT OVER SOURCE/DRAIN CONTACT
- Publication number 20240332182
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL
- Publication number 20240324476
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT CUT AND WRAP AROUND CONTACT
- Publication number 20240321645
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS

Chanro Park

Person

Patents Grantslast 30 patents

MRAM top electrode structure with liner layer

Scaled 2T DRAM

Metal-insulator-metal capacitor structure with enlarged capacitor area

Copper interconnects with self-aligned hourglass-shaped metal cap

Fin stack including tensile-strained and compressively strained fin...

CPP-agnostic source-drain contact formation for gate-all-around dev...

Spin-based gate-all-around transistors

Fork sheet device with better electrostatic control

Reducing copper line resistance

Resistive random-access memory structures with stacked transistors

Isolation pillar structures for stacked device structures

Nanosheet transistor devices with different active channel widths

Top via patterning using metal as hard mask and via conductor

Hard mask removal without damaging top epitaxial layer

Air gap spacer formation for nano-scale semiconductor devices

Field effect transistors comprising a matrix of gate-all-around cha...

Stacked field-effect transistors

Stacked FET with independent gate control

Structure and method to pattern pitch lines

Ferroelectric random-access memory cell

Subtractive metal etch with improved isolation for BEOL interconnec...

Nanosheet transistors with self-aligned gate cut

Gate-all-around field effect transistors having end portions of nan...

Fin-type field effect transistor having a wrap-around gate with bot...

Beol tip-to-tip shorting and time dependent dielectric breakdown

Electronic fuse structure embedded in top via

Top via interconnects without barrier metal between via and above line

Semiconductor structures with power rail disposed under active gate

BEOL etch stop layer without capacitance penalty

Self aligned top contact for vertical transistor

Patents Applicationslast 30 patents

INTERCONNECT WITH TOPVIA

GATE CUT STRUCTURE FOR TRANSISTORS

BACKSIDE GATE CONTACT AND BACKSIDE CROSS-COUPLE CONNECT

ANGLED EPITAXY CUT

STACKED FET POWER DELIVERY NETWORK FORMATION

INNER SPACER HAVING A CURVED PORTION

ANGLED GATE CUT REGION

LATE SRAM CUT WITH BACKSIDE CONTACT

CO-INTEGRATION OF S/D METAL CONTACT CUT AND WRAP-AROUND-CONTACT

NANOSHEET DEVICE WITH ALIGNED ISOLATION AND EPITAXIAL GROWTH

WRAP-AROUND MIDDLE-OF-LINE CONTACT WITH BACKSIDE SOURCE/DRAIN CUT F...

NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION

WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE

WORK FUNCTION METAL PATTERNING AND MIDDLE-OF-LINE SELF-ALIGNED CONT...

SRAM FORMATION FOR VERTICAL FET TRANSISTOR WITH BACKSIDE CONTACT

GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE

INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATIO...

METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)

SEMICONDUCTOR BACKSIDE ISOLATION FEATURE FOR MERGED EPITAXY

SELF-ALIGNED BACKSIDE CONTACT WITH PROTRUDING SOURCE/DRAIN

SELF ALIGNED BACKSIDE CONTACT

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...

SCALED 2T DRAM

NANOWIRE FLASH MEMORY WITH SEPARATED SOURCE/DRAIN REGIONS

SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...

STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES

ASYMMETRIC GATE CONTACT OVER SOURCE/DRAIN CONTACT

STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL

CONTACT CUT AND WRAP AROUND CONTACT