Chanro Park

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanosheet transistors with self-aligned gate cut
- Patent number 12,107,014
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistors having end portions of nan...
- Patent number 12,094,972
- Issue date Sep 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistor having a wrap-around gate with bot...
- Patent number 12,094,949
- Issue date Sep 17, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Beol tip-to-tip shorting and time dependent dielectric breakdown
- Patent number 12,087,624
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic fuse structure embedded in top via
- Patent number 12,062,609
- Issue date Aug 13, 2024
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top via interconnects without barrier metal between via and above line
- Patent number 12,057,395
- Issue date Aug 6, 2024
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with power rail disposed under active gate
- Patent number 12,046,643
- Issue date Jul 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BEOL etch stop layer without capacitance penalty
- Patent number 12,027,416
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned top contact for vertical transistor
- Patent number 12,009,422
- Issue date Jun 11, 2024
- International Business Machines Corporation
- ChoongHyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable resistive random access memory cell
- Patent number 12,004,435
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Min Gyu Sung
Information Patent Grant
RRAM with high work function cap
- Patent number 12,004,436
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
Information Patent Grant
Nanosheet-based semiconductor structure with dielectric pillar
- Patent number 12,002,850
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of rigid close-pitch interconnects
- Patent number 11,972,977
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thick gate oxide device option for nanosheet device
- Patent number 11,955,526
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field effect transistor with a source drain epitaxy repla...
- Patent number 11,942,374
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to fabricate resistive memory with vertical pr...
- Patent number 11,937,521
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Chanro Park
Information Patent Grant
Wrap-around-contact for 2D-channel gate-all-around field-effect-tra...
- Patent number 11,935,930
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having bottom isolation and enhanced carrie...
- Patent number 11,923,363
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via CD controllable top via structure
- Patent number 11,923,246
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via interconnects including super vias
- Patent number 11,916,013
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked complementary field effect transistors
- Patent number 11,916,073
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alternating spacers for pitch structure
- Patent number 11,908,732
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory with heater
- Patent number 11,895,934
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Grant
Anti-fuse with laterally extended liner
- Patent number 11,881,431
- Issue date Jan 23, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive-bridging semiconductor memory device formed by selective...
- Patent number 11,882,772
- Issue date Jan 23, 2024
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Grant
Airgap gate spacer
- Patent number 11,876,114
- Issue date Jan 16, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with stacked vias having dome-shaped tips
- Patent number 11,848,264
- Issue date Dec 19, 2023
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with airgap spacer formation from backside of...
- Patent number 11,848,384
- Issue date Dec 19, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Line formation with cut-first tip definition
- Patent number 11,798,842
- Issue date Oct 24, 2023
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with multiple gate dielectrics and dual wor...
- Patent number 11,791,396
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOWIRE FLASH MEMORY WITH SEPARATED SOURCE/DRAIN REGIONS
- Publication number 20240357822
- Publication date Oct 24, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG
- Publication number 20240347533
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...
- Publication number 20240339538
- Publication date Oct 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES
- Publication number 20240332082
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC GATE CONTACT OVER SOURCE/DRAIN CONTACT
- Publication number 20240332182
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL
- Publication number 20240324476
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT CUT AND WRAP AROUND CONTACT
- Publication number 20240321645
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF ACCURATELY CONTROLLING CONTACT GOUGING POSI...
- Publication number 20240313070
- Publication date Sep 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY ALIGNED VIA TO SINGLE DAMASCENE UPPER TRENCH
- Publication number 20240312839
- Publication date Sep 19, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE ME...
- Publication number 20240284687
- Publication date Aug 22, 2024
- International Business Machines Corporation
- Min Gyu Sung
Information Patent Application
SUBTRACTIVE METAL VIA WITH METAL BRIDGE
- Publication number 20240282704
- Publication date Aug 22, 2024
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SIGNAL ROUTING WITH BACKSIDE INTERCONNECT
- Publication number 20240242012
- Publication date Jul 18, 2024
- International Business Machines Corporation
- Ruilong Xie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BACKSIDE CONTACTS FOR STACKED FIELD EFFECT TRANSISTORS
- Publication number 20240222227
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST
- Publication number 20240224539
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Application
SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20240224819
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Chanro Park
Information Patent Application
STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKS...
- Publication number 20240213248
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20240206352
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
Information Patent Application
TWO-TRANSISTOR CHIP AND THREE-TRANSISTOR CHIP IDENTIFICATION BIT CELLS
- Publication number 20240202305
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Kangguo Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT
- Publication number 20240203990
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR
- Publication number 20240203992
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL
- Publication number 20240203879
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHO...
- Publication number 20240204008
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED ReRAM WITH BACKSIDE CONTACT
- Publication number 20240196627
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE
- Publication number 20240194677
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL
- Publication number 20240186387
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS
- Publication number 20240188282
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE
- Publication number 20240188447
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Chanro Park
- G11 - INFORMATION STORAGE
Information Patent Application
LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK
- Publication number 20240178136
- Publication date May 30, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANS...
- Publication number 20240178156
- Publication date May 30, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...
- Publication number 20240172454
- Publication date May 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS

Chanro Park

Person

Patents Grantslast 30 patents

Nanosheet transistors with self-aligned gate cut

Gate-all-around field effect transistors having end portions of nan...

Fin-type field effect transistor having a wrap-around gate with bot...

Beol tip-to-tip shorting and time dependent dielectric breakdown

Electronic fuse structure embedded in top via

Top via interconnects without barrier metal between via and above line

Semiconductor structures with power rail disposed under active gate

BEOL etch stop layer without capacitance penalty

Self aligned top contact for vertical transistor

Tunable resistive random access memory cell

RRAM with high work function cap

Nanosheet-based semiconductor structure with dielectric pillar

Fabrication of rigid close-pitch interconnects

Thick gate oxide device option for nanosheet device

Nanosheet field effect transistor with a source drain epitaxy repla...

Structure and method to fabricate resistive memory with vertical pr...

Wrap-around-contact for 2D-channel gate-all-around field-effect-tra...

Semiconductor structure having bottom isolation and enhanced carrie...

Via CD controllable top via structure

Via interconnects including super vias

Stacked complementary field effect transistors

Alternating spacers for pitch structure

Phase change memory with heater

Anti-fuse with laterally extended liner

Conductive-bridging semiconductor memory device formed by selective...

Airgap gate spacer

Semiconductor structure with stacked vias having dome-shaped tips

Semiconductor device with airgap spacer formation from backside of...

Line formation with cut-first tip definition

Field effect transistor with multiple gate dielectrics and dual wor...

Patents Applicationslast 30 patents

NANOWIRE FLASH MEMORY WITH SEPARATED SOURCE/DRAIN REGIONS

SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...

STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES

ASYMMETRIC GATE CONTACT OVER SOURCE/DRAIN CONTACT

STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL

CONTACT CUT AND WRAP AROUND CONTACT

METHOD AND STRUCTURE OF ACCURATELY CONTROLLING CONTACT GOUGING POSI...

FULLY ALIGNED VIA TO SINGLE DAMASCENE UPPER TRENCH

MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE ME...

SUBTRACTIVE METAL VIA WITH METAL BRIDGE

HYBRID SIGNAL ROUTING WITH BACKSIDE INTERCONNECT

BACKSIDE CONTACTS FOR STACKED FIELD EFFECT TRANSISTORS

FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST

SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL

STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKS...

TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY

TWO-TRANSISTOR CHIP AND THREE-TRANSISTOR CHIP IDENTIFICATION BIT CELLS

STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT

GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR

LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL

STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHO...

EMBEDDED ReRAM WITH BACKSIDE CONTACT

PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE

VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL

STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS

MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE

LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK

SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANS...

CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...