Che-Chia Wei

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating interlevel contacts of aluminum/refractory m...
- Patent number 6,617,242
- Issue date Sep 9, 2003
- STMicroelectronics, Inc.
- Fusen E. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming integrated circuit device structures from semico...
- Patent number 6,313,034
- Issue date Nov 6, 2001
- Chartered Semiconductor Manufacturing
- Yang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Definition of anti-fuse cell for programmable gate array application
- Patent number 6,307,248
- Issue date Oct 23, 2001
- Chartered Semiconductor Manufacturing Company
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a metal contact
- Patent number 6,287,963
- Issue date Sep 11, 2001
- STMicroelectronics, Inc.
- Fusen E. Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interlevel contact including aluminum-refractory metal alloy formed...
- Patent number 6,242,811
- Issue date Jun 5, 2001
- STMicroelectronics, Inc.
- Fusen E. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming programmable contact structure
- Patent number 6,159,836
- Issue date Dec 12, 2000
- STMicroelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit device
- Patent number 6,027,979
- Issue date Feb 22, 2000
- STMicroelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming isolated regions of oxide
- Patent number 5,977,607
- Issue date Nov 2, 1999
- STMicroelectronics, Inc.
- Robert Louis Hodges
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a metal contact
- Patent number 5,930,673
- Issue date Jul 27, 1999
- STMicroelectronics, Inc.
- Fusen E. Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Definition of anti-fuse cell for programmable gate array application
- Patent number 5,923,075
- Issue date Jul 13, 1999
- Chartered Semiconductor Manufacturing Ltd.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Having halo regions integrated circuit device structure
- Patent number 5,894,158
- Issue date Apr 13, 1999
- STMicroelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor contact via structure
- Patent number 5,841,195
- Issue date Nov 24, 1998
- STMicroelectronics, Inc.
- Yih-Shung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit device
- Patent number 5,837,587
- Issue date Nov 17, 1998
- SGS-Thomson Microelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making back gate contact for silicon on insulator technology
- Patent number 5,610,083
- Issue date Mar 11, 1997
- Chartered Semiconductor Manufacturing Pte Ltd
- Lap Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming interconnect in integrated circuits
- Patent number 5,595,935
- Issue date Jan 21, 1997
- SGS-Thomson Microelectronics, Inc.
- Tsiu C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact process
- Patent number 5,500,382
- Issue date Mar 19, 1996
- SGS-Thomson Microelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact formation
- Patent number 5,491,355
- Issue date Feb 13, 1996
- SGS-Thomson Microelectronics, Inc.
- Che C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor contact via structure and method
- Patent number 5,444,019
- Issue date Aug 22, 1995
- SGS-Thomson Microelectronics, Inc.
- Fusen E. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable contact structure
- Patent number 5,434,448
- Issue date Jul 18, 1995
- SGS-Thomson Microelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact process
- Patent number 5,369,303
- Issue date Nov 29, 1994
- SGS-Thomson Microelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local interconnect for integrated circuits
- Patent number 5,349,229
- Issue date Sep 20, 1994
- SGS-Thomson Microelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an interconnect structure in an integrated c...
- Patent number 5,346,860
- Issue date Sep 13, 1994
- SGS-Thomson Microelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-capped titanium silicide formation
- Patent number 5,326,724
- Issue date Jul 5, 1994
- Texas Instruments Incorporated
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor contact via structure having amorphous silicon side w...
- Patent number 5,317,192
- Issue date May 31, 1994
- SGS-Thomson Microelectronics, Inc.
- Fusen E. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure for an integrated circuit
- Patent number 5,313,084
- Issue date May 17, 1994
- SGS-Thomson Microelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate overlap LDD structure
- Patent number 5,304,504
- Issue date Apr 19, 1994
- SGS-Thomson Microelectronics, Inc.
- Che-Chia Wei
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Method for self-aligned polysilicon contact formation
- Patent number 5,278,098
- Issue date Jan 11, 1994
- SGS-Thomson Microelectronics, Inc.
- Che C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate overlapping LDD structure
- Patent number 5,276,347
- Issue date Jan 4, 1994
- SGS-Thomson Microelectronics, Inc.
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming isolated regions of oxide
- Patent number 5,260,229
- Issue date Nov 9, 1993
- SGS-Thomson Microelectronics, Inc.
- Robert L. Hodges
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor contact via structure and method
- Patent number 5,246,883
- Issue date Sep 21, 1993
- SGS-Thomson Microelectronics, Inc.
- Yih-Shung Lin
- H01 - BASIC ELECTRIC ELEMENTS

Che-Chia Wei

Person

Patents Grantslast 30 patents

Method for fabricating interlevel contacts of aluminum/refractory m...

Method for forming integrated circuit device structures from semico...

Definition of anti-fuse cell for programmable gate array application

Method for forming a metal contact

Interlevel contact including aluminum-refractory metal alloy formed...

Method for forming programmable contact structure

Method of forming an integrated circuit device

Method of forming isolated regions of oxide

Method for forming a metal contact

Definition of anti-fuse cell for programmable gate array application

Having halo regions integrated circuit device structure

Semiconductor contact via structure

Method of forming an integrated circuit device

Method of making back gate contact for silicon on insulator technology

Method for forming interconnect in integrated circuits

Self-aligned contact process

Self-aligned contact formation

Semiconductor contact via structure and method

Programmable contact structure

Self-aligned contact process

Local interconnect for integrated circuits

Method for fabricating an interconnect structure in an integrated c...

Oxide-capped titanium silicide formation

Semiconductor contact via structure having amorphous silicon side w...

Interconnect structure for an integrated circuit

Method of forming a gate overlap LDD structure

Method for self-aligned polysilicon contact formation

Gate overlapping LDD structure

Method of forming isolated regions of oxide

Semiconductor contact via structure and method