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Nonconformal Al Via Filling and Planarization by Partially Ionized Beam Deposition for Multilevel Interconncection, S. N. Mei, et al., 1987 IEEE, pp. 503-505. |
Aluminum Alloy Planarization for Topography Control of Multi-level VLSI Interconnect, Demaray, et al., 1987 IEEE, pp. 371-375. |
TiN formed by evaporation as a diffusion barrier between Al and Si, C. Y. Ting, IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, May 6, 1982, pp. 14-18. |
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