Chien Chiang

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a damascene structure with integrated planar diel...
- Patent number 7,361,582
- Issue date Apr 22, 2008
- Novellus Systems, Inc.
- Tom Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming phase change memories
- Patent number 7,348,620
- Issue date Mar 25, 2008
- Ovonyx, Inc.
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a damascene structure with integrated planar diel...
- Patent number 7,229,907
- Issue date Jun 12, 2007
- Tom Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to selectively increase the top resistance of the lower prog...
- Patent number 7,217,945
- Issue date May 15, 2007
- Intel Corporation
- Charles Dennison
- G11 - INFORMATION STORAGE
Information Patent Grant
Using selective deposition to form phase-change memory cells
- Patent number 7,214,632
- Issue date May 8, 2007
- Intel Corporation
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming phase change memories
- Patent number 7,196,351
- Issue date Mar 27, 2007
- Ovonyx, Inc.
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using selective deposition to form phase-change memory cells
- Patent number 7,183,567
- Issue date Feb 27, 2007
- Intel Corporation
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing shunts in memories with phase-change material
- Patent number 7,161,225
- Issue date Jan 9, 2007
- Intel Corporation
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit die and an electronic assembly having a three-di...
- Patent number 7,112,887
- Issue date Sep 26, 2006
- Intel Corporation
- Johanna M. Swan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-plane on-chip decoupling capacitors and method for making same
- Patent number 6,949,831
- Issue date Sep 27, 2005
- Intel Corporation
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compositionally modified resistive electrode
- Patent number 6,878,618
- Issue date Apr 12, 2005
- Ovonyx, Inc.
- Tyler A. Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming phase change memories
- Patent number 6,869,883
- Issue date Mar 22, 2005
- Ovonyx, Inc.
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing shunts in memories with phase-change material
- Patent number 6,861,267
- Issue date Mar 1, 2005
- Intel Corporation
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit die and an electronic assembly having a three-di...
- Patent number 6,848,177
- Issue date Feb 1, 2005
- Intel Corporation
- Johanna M. Swan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal structure for a phase-change memory device
- Patent number 6,797,979
- Issue date Sep 28, 2004
- Intel Corporation
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-plane on-chip decoupling capacitors and method for making same
- Patent number 6,777,320
- Issue date Aug 17, 2004
- Intel Corporation
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to enhance performance of thermal resistor device
- Patent number 6,770,524
- Issue date Aug 3, 2004
- Intel Corporation
- Chien Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Reduced area intersection between electrode and programming element
- Patent number 6,673,700
- Issue date Jan 6, 2004
- Ovonyx, Inc.
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to enhance performance of thermal resistor device
- Patent number 6,621,095
- Issue date Sep 16, 2003
- Ovonyx, Inc.
- Chien Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal structure for a phase-change memory device
- Patent number 6,569,705
- Issue date May 27, 2003
- Intel Corporation
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compositionally modified resistive electrode
- Patent number 6,563,164
- Issue date May 13, 2003
- Ovonyx, Inc.
- Tyler A. Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Using selective deposition to form phase-change memory cells
- Patent number 6,545,287
- Issue date Apr 8, 2003
- Intel Corporation
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compositionally modified resistive electrode
- Patent number 6,404,665
- Issue date Jun 11, 2002
- Intel Corporation
- Tyler A. Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to enhance performance of thermal resistor device
- Patent number 6,339,544
- Issue date Jan 15, 2002
- Intel Corporation
- Chien Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabricating low K dielectric interconnect systems by using dummy st...
- Patent number 6,309,956
- Issue date Oct 30, 2001
- Intel Corporation
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for reducing interconnect system capacitance t...
- Patent number 6,303,464
- Issue date Oct 16, 2001
- Intel Corporation
- Eng T. Gaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-K Dielectric layer and method of making same
- Patent number 6,277,765
- Issue date Aug 21, 2001
- Intel Corporation
- Peng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure using a combination of hard dielectric and p...
- Patent number 6,239,019
- Issue date May 29, 2001
- Intel Corporation
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-rich block copolymers to achieve unbalanced vias
- Patent number 6,143,647
- Issue date Nov 7, 2000
- Intel Corporation
- Chuanbin Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-rich block copolymers to achieve unbalanced vias
- Patent number 6,051,869
- Issue date Apr 18, 2000
- Intel Corporation
- Chuanbin Pan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Forming phase change memories
- Publication number 20070138467
- Publication date Jun 21, 2007
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming A Damascene Structure with Integrated Planar Diel...
- Publication number 20070123033
- Publication date May 31, 2007
- Novellus Systems, Inc.
- Tom Wu
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Method of forming a damascene structure with integrated planar diel...
- Publication number 20060057829
- Publication date Mar 16, 2006
- Tom Wu
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Method to selectively increase the top resistance of the lower prog...
- Publication number 20050194620
- Publication date Sep 8, 2005
- Charles Dennison
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing shunts in memories with phase-change material
- Publication number 20050136557
- Publication date Jun 23, 2005
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming phase change memories
- Publication number 20050104231
- Publication date May 19, 2005
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit die and an electronic assembly having a three-di...
- Publication number 20050090042
- Publication date Apr 28, 2005
- Johanna M. Swan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-plane on-chip decoupling capacitors and method for making same
- Publication number 20040245606
- Publication date Dec 9, 2004
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming phase change memories
- Publication number 20040114317
- Publication date Jun 17, 2004
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced area intersection between electrode and programming element
- Publication number 20040087076
- Publication date May 6, 2004
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Application
Compositionally modified resistive electrode
- Publication number 20040069982
- Publication date Apr 15, 2004
- Tyler A. Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Method to enhance performance of thermal resistor device
- Publication number 20040051128
- Publication date Mar 18, 2004
- Chien Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated circuit die and an electronic assembly having a three-di...
- Publication number 20030210534
- Publication date Nov 13, 2003
- Johanna M. Swan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-resistivity metal in a phase-change memory cell
- Publication number 20030211732
- Publication date Nov 13, 2003
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-resistivity metal in a phase-change memory cell
- Publication number 20030205720
- Publication date Nov 6, 2003
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal structure for a phase-change memory device
- Publication number 20030193063
- Publication date Oct 16, 2003
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit die and an electronic assembly having a three-di...
- Publication number 20030183943
- Publication date Oct 2, 2003
- Johanna M. Swan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using selective deposition to form phase-change memory cells
- Publication number 20030151041
- Publication date Aug 14, 2003
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using selective deposition to form phase-change memory cells
- Publication number 20030146452
- Publication date Aug 7, 2003
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing shunts in memories with phase-change material
- Publication number 20030052351
- Publication date Mar 20, 2003
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING SELECTIVE DEPOSITION TO FORM PHASE-CHANGE MEMORY CELLS
- Publication number 20030047727
- Publication date Mar 13, 2003
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Exposed phase edge mask method for generating periodic structures w...
- Publication number 20030039893
- Publication date Feb 27, 2003
- Jeff Farnsworth
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Reduced area intersection between electrode and programming element
- Publication number 20030003691
- Publication date Jan 2, 2003
- Charles H. Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal structure for a phase-change memory device
- Publication number 20020080647
- Publication date Jun 27, 2002
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-resistivity metal in a phase-change memory cell
- Publication number 20020074658
- Publication date Jun 20, 2002
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to enhance performance of thermal resistor device
- Publication number 20020039310
- Publication date Apr 4, 2002
- Chien Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compositionally modified resistive electrode
- Publication number 20020038883
- Publication date Apr 4, 2002
- Tyler A. Lowrey
- H01 - BASIC ELECTRIC ELEMENTS

Chien Chiang

Person

Patents Grantslast 30 patents

Method of forming a damascene structure with integrated planar diel...

Forming phase change memories

Method of forming a damascene structure with integrated planar diel...

Method to selectively increase the top resistance of the lower prog...

Using selective deposition to form phase-change memory cells

Forming phase change memories

Using selective deposition to form phase-change memory cells

Reducing shunts in memories with phase-change material

Integrated circuit die and an electronic assembly having a three-di...

In-plane on-chip decoupling capacitors and method for making same

Compositionally modified resistive electrode

Forming phase change memories

Reducing shunts in memories with phase-change material

Integrated circuit die and an electronic assembly having a three-di...

Metal structure for a phase-change memory device

In-plane on-chip decoupling capacitors and method for making same

Method to enhance performance of thermal resistor device

Reduced area intersection between electrode and programming element

Method to enhance performance of thermal resistor device

Metal structure for a phase-change memory device

Compositionally modified resistive electrode

Using selective deposition to form phase-change memory cells

Compositionally modified resistive electrode

Method to enhance performance of thermal resistor device

Fabricating low K dielectric interconnect systems by using dummy st...

Method and structure for reducing interconnect system capacitance t...

Low-K Dielectric layer and method of making same

Interconnect structure using a combination of hard dielectric and p...

Silicon-rich block copolymers to achieve unbalanced vias

Silicon-rich block copolymers to achieve unbalanced vias

Patents Applicationslast 30 patents

Forming phase change memories

Method of Forming A Damascene Structure with Integrated Planar Diel...

Method of forming a damascene structure with integrated planar diel...

Method to selectively increase the top resistance of the lower prog...

Reducing shunts in memories with phase-change material

Forming phase change memories

Integrated circuit die and an electronic assembly having a three-di...

In-plane on-chip decoupling capacitors and method for making same

Forming phase change memories

Reduced area intersection between electrode and programming element

Compositionally modified resistive electrode

Method to enhance performance of thermal resistor device

Integrated circuit die and an electronic assembly having a three-di...

High-resistivity metal in a phase-change memory cell

High-resistivity metal in a phase-change memory cell

Metal structure for a phase-change memory device

Integrated circuit die and an electronic assembly having a three-di...

Using selective deposition to form phase-change memory cells

Using selective deposition to form phase-change memory cells

Reducing shunts in memories with phase-change material

USING SELECTIVE DEPOSITION TO FORM PHASE-CHANGE MEMORY CELLS

Exposed phase edge mask method for generating periodic structures w...

Reduced area intersection between electrode and programming element

Metal structure for a phase-change memory device

High-resistivity metal in a phase-change memory cell

Method to enhance performance of thermal resistor device

Compositionally modified resistive electrode