Chih-Chiang Chang

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-step insulator formation in trenches to avoid seams in insula...
- Patent number 10,964,599
- Issue date Mar 30, 2021
- GLOBALFOUNDRIES U.S. INC.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure
- Patent number 10,930,549
- Issue date Feb 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor material in trenches having differe...
- Patent number 10,714,376
- Issue date Jul 14, 2020
- GLOBALFOUNDRIES Inc.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chamfered replacement gate structures
- Patent number 10,636,890
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure
- Patent number 10,460,986
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step insulator formation in trenches to avoid seams in insula...
- Patent number 10,431,500
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for gate height control and void free RMG fill
- Patent number 10,354,928
- Issue date Jul 16, 2019
- GLOBALFOUNDRIES Inc.
- Suraj Kumar Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced structure for self-aligned contact and method for producin...
- Patent number 10,211,103
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for gate height control and void free RMG fill
- Patent number 10,056,303
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Suraj Kumar Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten gate and method for forming
- Patent number 10,014,180
- Issue date Jul 3, 2018
- GLOBALFOUNDRIES Inc.
- Neal A. Makela
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enlarged sacrificial gate caps for forming self-aligned contacts
- Patent number 10,008,385
- Issue date Jun 26, 2018
- GLOBALFOUNDRIES Inc.
- Ashish Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS, APPARATUS, AND SYSTEM TO CONTROL GATE HEIGHT AND CAP THICK...
- Publication number 20200052106
- Publication date Feb 13, 2020
- GLOBALFOUNDRIES INC.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE
- Publication number 20200013672
- Publication date Jan 9, 2020
- GLOBALFOUNDRIES INC.
- Jinsheng GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR MATERIAL IN TRENCHES HAVING DIFFERE...
- Publication number 20190393077
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES INC.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...
- Publication number 20190355624
- Publication date Nov 21, 2019
- GLOBALFOUNDRIES INC.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMFERED REPLACEMENT GATE STRUCTURES
- Publication number 20190348517
- Publication date Nov 14, 2019
- GLOBALFOUNDRIES INC.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATERIAL COMBINATIONS FOR POLISH STOPS AND GATE CAPS
- Publication number 20190326416
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...
- Publication number 20190304843
- Publication date Oct 3, 2019
- GLOBALFOUNDRIES INC.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE
- Publication number 20190237363
- Publication date Aug 1, 2019
- GLOBALFOUNDRIES INC.
- Jinsheng GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK PROCESSES AND STRUCTURES
- Publication number 20190096679
- Publication date Mar 28, 2019
- GLOBALFOUNDRIES INC.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEME FOR GATE HEIGHT CONTROL AND VOID FREE RMG FILL
- Publication number 20180323113
- Publication date Nov 8, 2018
- GLOBALFOUNDRIES INC.
- Suraj Kumar PATIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS AND SYSTEM FOR PROVIDING NITRIDE CAP LAYER IN REP...
- Publication number 20170338325
- Publication date Nov 23, 2017
- GLOBALFOUNDRIES INC.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS

Chih-Chiang Chang

Person

Patents Grantslast 30 patents

Multi-step insulator formation in trenches to avoid seams in insula...

Cap structure

Method of forming semiconductor material in trenches having differe...

Chamfered replacement gate structures

Cap structure

Multi-step insulator formation in trenches to avoid seams in insula...

Integration scheme for gate height control and void free RMG fill

Advanced structure for self-aligned contact and method for producin...

Integration scheme for gate height control and void free RMG fill

Tungsten gate and method for forming

Enlarged sacrificial gate caps for forming self-aligned contacts

Patents Applicationslast 30 patents

METHODS, APPARATUS, AND SYSTEM TO CONTROL GATE HEIGHT AND CAP THICK...

CAP STRUCTURE

METHOD OF FORMING SEMICONDUCTOR MATERIAL IN TRENCHES HAVING DIFFERE...

MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...

CHAMFERED REPLACEMENT GATE STRUCTURES

MATERIAL COMBINATIONS FOR POLISH STOPS AND GATE CAPS

MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...

CAP STRUCTURE

GATE STACK PROCESSES AND STRUCTURES

INTEGRATION SCHEME FOR GATE HEIGHT CONTROL AND VOID FREE RMG FILL

METHOD, APPARATUS AND SYSTEM FOR PROVIDING NITRIDE CAP LAYER IN REP...