Chong Wee Lim

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Patents Grantslast 30 patents

Information Patent Grant
Silicon nitride capped shallow trench isolation method for fabricat...
- Patent number 6,350,661
- Issue date Feb 26, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Chong Wee Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride capped shallow trench isolation method for fabricat...
- Patent number 6,297,126
- Issue date Oct 2, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Chong Wee Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized Co/Ti-salicide scheme for shallow junction deep sub-micro...
- Patent number 6,271,133
- Issue date Aug 7, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Chong Wee Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially recessed shallow trench isolation method for fabricating...
- Patent number 6,265,302
- Issue date Jul 24, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Chong Wee Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form shallow trench isolations with rounded corners and r...
- Patent number 6,228,727
- Issue date May 8, 2001
- Chartered Semiconductor Manufacturing, Ltd.
- Chong Wee Lim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Silicon nitride capped shallow trench isolation method for fabricat...
- Publication number 20010031540
- Publication date Oct 18, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Chong Wee Lim
- H01 - BASIC ELECTRIC ELEMENTS