Chu-Yun Fu

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating semiconductor device isolation structure
- Patent number 10,269,616
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor
- Patent number 9,716,091
- Issue date Jul 25, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ta Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device isolation structure
- Patent number 9,673,082
- Issue date Jun 6, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor
- Patent number 9,379,215
- Issue date Jun 28, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ta Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device isolation structure
- Patent number 9,224,606
- Issue date Dec 29, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor
- Patent number 9,209,300
- Issue date Dec 8, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ta Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of a FinFET element
- Patent number 8,883,597
- Issue date Nov 11, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned halo/pocket implantation for reducing leakage and sour...
- Patent number 8,822,293
- Issue date Sep 2, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin held effect transistor
- Patent number 8,809,940
- Issue date Aug 19, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ta Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an isolation structure
- Patent number 8,580,653
- Issue date Nov 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tze-Liang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and method of fabricating the same
- Patent number 8,440,517
- Issue date May 14, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ta Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an isolation structure
- Patent number 8,404,561
- Issue date Mar 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tze-Liang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of source/drain extensions with ultra-shallow junctions
- Patent number 8,173,503
- Issue date May 8, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yihang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device isolation structure
- Patent number 8,110,890
- Issue date Feb 7, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon gate formation by in-situ doping
- Patent number 7,892,909
- Issue date Feb 22, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a multi-layer shallow trench isolation structure...
- Patent number 7,611,963
- Issue date Nov 3, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Tine Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of FinFETs with multiple fin heights
- Patent number 7,612,405
- Issue date Nov 3, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N/PMOS saturation current, HCE, and Vt stability by contact etch st...
- Patent number 7,371,629
- Issue date May 13, 2008
- Taiwan Semiconductor Manufacturing Company
- Chu-Yun Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scratch reduction for chemical mechanical polishing
- Patent number 7,297,632
- Issue date Nov 20, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chuang-Ping Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of achieving improved STI gap fill with reduced stress
- Patent number 7,118,987
- Issue date Oct 10, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chu-Yun Fu
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
High performance strained channel MOSFETs by coupled stress effects
- Patent number 7,119,404
- Issue date Oct 10, 2006
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Cheng-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation method for reducing oxide thickness variat...
- Patent number 7,098,116
- Issue date Aug 29, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Cheng Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming contact plug on silicide structure
- Patent number 6,884,736
- Issue date Apr 26, 2005
- Taiwan Semiconductor Manufacturing Co, Ltd.
- Chii-Ming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing dielectric materials onto semiconductor subst...
- Patent number 6,713,406
- Issue date Mar 30, 2004
- Taiwan Semiconductor Manufacturing Company
- Chu-Yun Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Borderless contact with buffer layer
- Patent number 6,630,398
- Issue date Oct 7, 2003
- Taiwan Semiconductor Manufacturing Company
- Ming Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ dry etching procedure to form a borderless contact hole
- Patent number 6,497,993
- Issue date Dec 24, 2002
- Taiwan Semiconductor Manufacturing Company
- Yuan-Hunh Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlevel dielectric composite layer for insulation of polysilicon...
- Patent number 6,479,385
- Issue date Nov 12, 2002
- Taiwan Semiconductor Manufacturing Company
- Syun-Ming Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of high density plasma phosphosilicate glass process on pre-...
- Patent number 6,461,966
- Issue date Oct 8, 2002
- Taiwan Semiconductor Manufacturing Company
- Yao-Hsiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making borderless contact having a sion buffer layer
- Patent number 6,444,566
- Issue date Sep 3, 2002
- Taiwan Semiconductor Manufacturing Company
- Ming Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce STI HDP-CVD USG deposition induced defects
- Patent number 6,426,272
- Issue date Jul 30, 2002
- Taiwan Semiconductor Manufacturing Company
- Chu-Yun Fu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Fabricating Semiconductor Device Isolation Structure
- Publication number 20170330791
- Publication date Nov 16, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR
- Publication number 20160379977
- Publication date Dec 29, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ta LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Semiconductor Device Isolation Structure
- Publication number 20160133506
- Publication date May 12, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR
- Publication number 20160087079
- Publication date Mar 24, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ta LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR
- Publication number 20140327091
- Publication date Nov 6, 2014
- Hung-Ta LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR
- Publication number 20130228865
- Publication date Sep 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ta LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING AN ISOLATION STRUCTURE
- Publication number 20130171803
- Publication date Jul 4, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tze-Liang LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Semiconductor Device Isolation Structure
- Publication number 20120094464
- Publication date Apr 19, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND METHOD OF FABRICATING THE SAME
- Publication number 20120091538
- Publication date Apr 19, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ta LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING AN ISOLATION STRUCTURE
- Publication number 20100291751
- Publication date Nov 18, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tze-Liang LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of Source/Drain Extensions with Ultra-Shallow Junctions
- Publication number 20100216288
- Publication date Aug 26, 2010
- Yihang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD FOR FORMING A MULTI-LAYER SHALLOW TRENCH ISOLATION STRUCTU...
- Publication number 20090267176
- Publication date Oct 29, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Tine Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Halo/Pocket Implantation for Reducing Leakage and Sour...
- Publication number 20090233410
- Publication date Sep 17, 2009
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATION OF A FINFET ELEMENT
- Publication number 20090035909
- Publication date Feb 5, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Semiconductor Device Isolation Structure
- Publication number 20080303104
- Publication date Dec 11, 2008
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon gate formation by in-situ doping
- Publication number 20080194072
- Publication date Aug 14, 2008
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon gate formation by in-situ doping
- Publication number 20080194087
- Publication date Aug 14, 2008
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Scratch reduction for chemical mechanical polishing
- Publication number 20060211250
- Publication date Sep 21, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chuang-Ping Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method for contact module processing
- Publication number 20060157776
- Publication date Jul 20, 2006
- Cheng-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for real-time control and monitor of depositio...
- Publication number 20060049036
- Publication date Mar 9, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hung Chang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Selectively strained MOSFETs to improve drive current
- Publication number 20060024879
- Publication date Feb 2, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chu-Yun Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance strained channel mosfets by coupled stress effects
- Publication number 20050260806
- Publication date Nov 24, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of achieving improved STI gap fill with reduced stress
- Publication number 20050170606
- Publication date Aug 4, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chu-Yun Fu
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Novel shallow trench isolation method for reducing oxide thickness...
- Publication number 20050153519
- Publication date Jul 14, 2005
- Taiwan Semiconductor Manufacturing Co.
- Chih-Cheng Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Test region layout for shallow trench isolation
- Publication number 20050095727
- Publication date May 5, 2005
- Weng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N/PMOS saturation current, HCE, and Vt stability by contact etch st...
- Publication number 20040110392
- Publication date Jun 10, 2004
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chu-Yun Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming contact plug on silicide structure
- Publication number 20040067635
- Publication date Apr 8, 2004
- Chii-Ming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Borderless contact with buffer layer
- Publication number 20020192943
- Publication date Dec 19, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Ming Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High selectivity Si-rich SiON etch-stop layer
- Publication number 20010034121
- Publication date Oct 25, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chu Yun Fu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of fabricating semiconductor device isolation structure

Fin field effect transistor

Method of fabricating semiconductor device isolation structure

Fin field effect transistor

Method of fabricating semiconductor device isolation structure

Fin field effect transistor

Method of fabrication of a FinFET element

Self-aligned halo/pocket implantation for reducing leakage and sour...

Fin held effect transistor

Method for fabricating an isolation structure

FinFET and method of fabricating the same

Method for fabricating an isolation structure

Fabrication of source/drain extensions with ultra-shallow junctions

Method of fabricating semiconductor device isolation structure

Polysilicon gate formation by in-situ doping

Method for forming a multi-layer shallow trench isolation structure...

Fabrication of FinFETs with multiple fin heights

N/PMOS saturation current, HCE, and Vt stability by contact etch st...

Scratch reduction for chemical mechanical polishing

Method of achieving improved STI gap fill with reduced stress

High performance strained channel MOSFETs by coupled stress effects

Shallow trench isolation method for reducing oxide thickness variat...

Method of forming contact plug on silicide structure

Method for depositing dielectric materials onto semiconductor subst...

Borderless contact with buffer layer

In situ dry etching procedure to form a borderless contact hole

Interlevel dielectric composite layer for insulation of polysilicon...

Method of high density plasma phosphosilicate glass process on pre-...

Method of making borderless contact having a sion buffer layer

Method to reduce STI HDP-CVD USG deposition induced defects

Patents Applicationslast 30 patents

Method of Fabricating Semiconductor Device Isolation Structure

FIN FIELD EFFECT TRANSISTOR

Method of Fabricating Semiconductor Device Isolation Structure

FIN FIELD EFFECT TRANSISTOR

FIN FIELD EFFECT TRANSISTOR

FIN FIELD EFFECT TRANSISTOR

METHOD FOR FABRICATING AN ISOLATION STRUCTURE

Method of Fabricating Semiconductor Device Isolation Structure

FINFET AND METHOD OF FABRICATING THE SAME

METHOD FOR FABRICATING AN ISOLATION STRUCTURE

Fabrication of Source/Drain Extensions with Ultra-Shallow Junctions

A METHOD FOR FORMING A MULTI-LAYER SHALLOW TRENCH ISOLATION STRUCTU...

Self-Aligned Halo/Pocket Implantation for Reducing Leakage and Sour...

METHOD OF FABRICATION OF A FINFET ELEMENT

Method of Fabricating Semiconductor Device Isolation Structure

Polysilicon gate formation by in-situ doping

Polysilicon gate formation by in-situ doping

Scratch reduction for chemical mechanical polishing

System and method for contact module processing

Method and apparatus for real-time control and monitor of depositio...

Selectively strained MOSFETs to improve drive current

High performance strained channel mosfets by coupled stress effects

Method of achieving improved STI gap fill with reduced stress

Novel shallow trench isolation method for reducing oxide thickness...

Test region layout for shallow trench isolation

N/PMOS saturation current, HCE, and Vt stability by contact etch st...

Method of forming contact plug on silicide structure

Borderless contact with buffer layer

High selectivity Si-rich SiON etch-stop layer