Chun Hui Low

Person

Johor, MY

People

Patents Grantslast 30 patents

Information Patent Grant
Via electromigration improvement by changing the via bottom geometr...
- Patent number 7,781,895
- Issue date Aug 24, 2010
- Chartered Semiconductor Manufacturing Ltd.
- Bei Chao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via electromigration improvement by changing the via bottom geometr...
- Patent number 7,691,739
- Issue date Apr 6, 2010
- Chartered Semiconductor Manufacturing Ltd.
- Bei Chao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple layer resist scheme implementing etch recipe particular to...
- Patent number 7,352,064
- Issue date Apr 1, 2008
- International Business Machines Corporation
- Nicholas C. M. Fuller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via electromigration improvement by changing the via bottom geometr...
- Patent number 7,045,455
- Issue date May 16, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Beichao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride capped shallow trench isolation method for fabricat...
- Patent number 6,350,661
- Issue date Feb 26, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Chong Wee Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride capped shallow trench isolation method for fabricat...
- Patent number 6,297,126
- Issue date Oct 2, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Chong Wee Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially recessed shallow trench isolation method for fabricating...
- Patent number 6,265,302
- Issue date Jul 24, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Chong Wee Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form shallow trench isolations with rounded corners and r...
- Patent number 6,228,727
- Issue date May 8, 2001
- Chartered Semiconductor Manufacturing, Ltd.
- Chong Wee Lim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VIA ELECTROMIGRATION IMPROVEMENT BY CHANGING THE VIA BOTTOM GEOMETR...
- Publication number 20090250818
- Publication date Oct 8, 2009
- Chartered Semiconductor Manufacturing LTD.
- Bei Chao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Via electromigration improvement by changing the via bottom geometr...
- Publication number 20060160354
- Publication date Jul 20, 2006
- Chartered Semiconductor Manufacturing LTD.
- BeiChao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Layer Resist Scheme Implementing Etch Recipe Particular to...
- Publication number 20060094230
- Publication date May 4, 2006
- International Business Machines Corporation
- Nicholas C.M. Fuller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Via electromigration improvement by changing the via bottom geometr...
- Publication number 20050090097
- Publication date Apr 28, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Beichao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon nitride capped shallow trench isolation method for fabricat...
- Publication number 20010031540
- Publication date Oct 18, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Chong Wee Lim
- H01 - BASIC ELECTRIC ELEMENTS

Chun Hui Low

Person

Patents Grantslast 30 patents

Via electromigration improvement by changing the via bottom geometr...

Via electromigration improvement by changing the via bottom geometr...

Multiple layer resist scheme implementing etch recipe particular to...

Via electromigration improvement by changing the via bottom geometr...

Silicon nitride capped shallow trench isolation method for fabricat...

Silicon nitride capped shallow trench isolation method for fabricat...

Partially recessed shallow trench isolation method for fabricating...

Method to form shallow trench isolations with rounded corners and r...

Patents Applicationslast 30 patents

VIA ELECTROMIGRATION IMPROVEMENT BY CHANGING THE VIA BOTTOM GEOMETR...

Via electromigration improvement by changing the via bottom geometr...

Multiple Layer Resist Scheme Implementing Etch Recipe Particular to...

Via electromigration improvement by changing the via bottom geometr...

Silicon nitride capped shallow trench isolation method for fabricat...