Damian A. Carver

Person

Colorado Springs, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit structures containing a strain-compensated compo...
- Patent number 9,012,308
- Issue date Apr 21, 2015
- Atmel Corporation
- Darwin Gene Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures containing a strain-compensated compo...
- Patent number 8,530,934
- Issue date Sep 10, 2013
- Atmel Corporation
- Darwin G. Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bandgap and recombination engineered emitter layers for SiGe HBT pe...
- Patent number 7,651,919
- Issue date Jan 26, 2010
- Atmel Corporation
- Darwin Gene Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-voltage single-layer polysilicon EEPROM memory cell
- Patent number 7,408,812
- Issue date Aug 5, 2008
- Atmel Corporation
- Muhammad I. Chaudhry
- G11 - INFORMATION STORAGE
Information Patent Grant
Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT...
- Patent number 7,300,849
- Issue date Nov 27, 2007
- Atmel Corporation
- Darwin Gene Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-cost, low-voltage single-layer polycrystalline EEPROM memory ce...
- Patent number 7,208,795
- Issue date Apr 24, 2007
- Atmel Corporation
- Damian A. Carver
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-voltage single-layer polysilicon eeprom memory cell
- Patent number 7,144,775
- Issue date Dec 5, 2006
- Atmel Corporation
- Muhammad I. Chaudhry
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Integrated Circuit Structures Containing a Strain- Compensated Comp...
- Publication number 20140001603
- Publication date Jan 2, 2014
- ATMEL CORPORATION
- Darwin Gene Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES CONTAINING A STRAIN-COMPENSATED COMPO...
- Publication number 20110073907
- Publication date Mar 31, 2011
- ATMEL CORPORATION
- Darwin G. Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen enhanced metastable silicon germanium film layer
- Publication number 20070148890
- Publication date Jun 28, 2007
- Darwin G. Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-VOLTAGE SINGLE-LAYER POLYSILICON EEPROM MEMORY CELL
- Publication number 20070133301
- Publication date Jun 14, 2007
- ATMEL CORPORATION
- Muhammad I. Chaudhry
- G11 - INFORMATION STORAGE
Information Patent Application
Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT...
- Publication number 20070111428
- Publication date May 17, 2007
- Darwin Gene Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bandgap and recombination engineered emitter layers for SiGe HBT pe...
- Publication number 20070105330
- Publication date May 10, 2007
- Darwin Gene Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for providing a heterojunction bipolar transistor...
- Publication number 20070102729
- Publication date May 10, 2007
- Darwin Gene Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-VOLTAGE SINGLE-LAYER POLYSILICON EEPROM MEMORY CELL
- Publication number 20070087550
- Publication date Apr 19, 2007
- ATMEL CORPORATION
- Muhammad I. Chaudhry
- G11 - INFORMATION STORAGE
Information Patent Application
Method for growth and optimization of heterojunction bipolar transi...
- Publication number 20060292809
- Publication date Dec 28, 2006
- Darwin G. Enicks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-cost, low-voltage single-layer polycrystalline EEPROM memory ce...
- Publication number 20060267071
- Publication date Nov 30, 2006
- Damian A. Carver
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-voltage single-layer polysilicon eeprom memory cell
- Publication number 20050258492
- Publication date Nov 24, 2005
- Muhammad I. Chaudhry
- G11 - INFORMATION STORAGE

Damian A. Carver

Person

Patents Grantslast 30 patents

Integrated circuit structures containing a strain-compensated compo...

Integrated circuit structures containing a strain-compensated compo...

Bandgap and recombination engineered emitter layers for SiGe HBT pe...

Low-voltage single-layer polysilicon EEPROM memory cell

Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT...

Low-cost, low-voltage single-layer polycrystalline EEPROM memory ce...

Low-voltage single-layer polysilicon eeprom memory cell

Patents Applicationslast 30 patents

Integrated Circuit Structures Containing a Strain- Compensated Comp...

INTEGRATED CIRCUIT STRUCTURES CONTAINING A STRAIN-COMPENSATED COMPO...

Oxygen enhanced metastable silicon germanium film layer

LOW-VOLTAGE SINGLE-LAYER POLYSILICON EEPROM MEMORY CELL

Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT...

Bandgap and recombination engineered emitter layers for SiGe HBT pe...

Method and system for providing a heterojunction bipolar transistor...

LOW-VOLTAGE SINGLE-LAYER POLYSILICON EEPROM MEMORY CELL

Method for growth and optimization of heterojunction bipolar transi...

Low-cost, low-voltage single-layer polycrystalline EEPROM memory ce...

Low-voltage single-layer polysilicon eeprom memory cell