Darrell M. Erb

Person

Los Altos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Composite tantalum nitride/tantalum copper capping layer
- Patent number 7,157,795
- Issue date Jan 2, 2007
- Advanced Micro Devices, Inc.
- Darrell M. Erb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Predicting EM reliability by decoupling extrinsic and intrinsic sigma
- Patent number 7,146,588
- Issue date Dec 5, 2006
- Advanced Micro Devices, Inc.
- Amit P. Marathe
- G01 - MEASURING TESTING
Information Patent Grant
Stabilizing fluorine etching of low-k materials
- Patent number 7,132,363
- Issue date Nov 7, 2006
- Advanced Micro Devices, Inc.
- Kai Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite tantalum capped inlaid copper with reduced electromigrati...
- Patent number 7,071,564
- Issue date Jul 4, 2006
- Advanced Micro Devices, Inc.
- Darrell M. Erb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper interconnects with metal capping layer and selective copper...
- Patent number 6,979,625
- Issue date Dec 27, 2005
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a selective barrier layer using a sacrificial layer
- Patent number 6,869,878
- Issue date Mar 22, 2005
- Advanced Micro Devices, Inc.
- Ercan Adem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Continuous barrier for interconnect structure formed in porous diel...
- Patent number 6,831,003
- Issue date Dec 14, 2004
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned conductive plugs in a semiconductor device
- Patent number 6,768,204
- Issue date Jul 27, 2004
- Advanced Micro Devices, Inc.
- Todd P. Lukanc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier and method for its production
- Patent number 6,756,303
- Issue date Jun 29, 2004
- Advanced Micro Devices, Inc.
- Darrell M. Erb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature dielectric deposition to improve copper electromigr...
- Patent number 6,756,306
- Issue date Jun 29, 2004
- Advanced Micro Devices, Inc.
- Steven C. Avanzino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper interconnect with improved barrier layer
- Patent number 6,727,592
- Issue date Apr 27, 2004
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of an alloying element to form a stable oxide layer on the surf...
- Patent number 6,717,266
- Issue date Apr 6, 2004
- Advanced Micro Devices, Inc.
- Amit P. Marathe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition process for allowing damascene-type Cu interco...
- Patent number 6,689,689
- Issue date Feb 10, 2004
- Advanced Micro Devices, Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anneal hillock suppression method in integrated circuit interconnects
- Patent number 6,500,754
- Issue date Dec 31, 2002
- Advanced Micro Devices, Inc.
- Darrell M. Erb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide barc in dual damascene processing
- Patent number 6,465,889
- Issue date Oct 15, 2002
- Advanced Micro Devices, Inc.
- Ramkumar Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition process for passivating top interface of damas...
- Patent number 6,455,425
- Issue date Sep 24, 2002
- Advanced Micro Devices, Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective electroplating with direct contact chemical polishing
- Patent number 6,454,916
- Issue date Sep 24, 2002
- Advanced Micro Devices, Inc.
- Fei Wang
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Process for alloying damascene-type Cu interconnect lines
- Patent number 6,444,567
- Issue date Sep 3, 2002
- Advanced Micro Devices, Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-reflective coating used in the fabrication of microcircuit str...
- Patent number 6,383,947
- Issue date May 7, 2002
- Advanced Micro Devices, Inc.
- Paul R. Besser
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Dual damascene arrangement for metal interconnection with oxide die...
- Patent number 6,380,091
- Issue date Apr 30, 2002
- Advanced Micro Devices, Inc.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for improved planarity metallization by electr...
- Patent number 6,319,834
- Issue date Nov 20, 2001
- Advanced Micro Devices, Inc.
- Darrell M. Erb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for passivating top interface of damascene-type Cu intercon...
- Patent number 6,319,819
- Issue date Nov 20, 2001
- Advanced Micro Devices, Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned dual damascene arrangement for metal interconnection w...
- Patent number 6,207,577
- Issue date Mar 27, 2001
- Advanced Micro Devices, Inc.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemically removable Cu CMP slurry abrasive
- Patent number 6,169,034
- Issue date Jan 2, 2001
- Advanced Micro Devices, Inc.
- Steven C. Avanzino
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Antireflective coating used in the fabrication of microcircuit stru...
- Patent number 6,165,855
- Issue date Dec 26, 2000
- Advanced Micro Devices, Inc.
- Paul R. Besser
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Chemically removable Cu CMP slurry abrasive
- Patent number 6,140,239
- Issue date Oct 31, 2000
- Advanced Micro Devices, Inc.
- Steven C. Avanzino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High planarity high-density in-laid metallization patterns by damas...
- Patent number 6,107,186
- Issue date Aug 22, 2000
- Advanced Micro Devices, Inc.
- Darrell M. Erb
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Selective nonconformal deposition for forming low dielectric insula...
- Patent number 6,048,802
- Issue date Apr 11, 2000
- Advanced Micro Devices, Inc.
- Steven Avanzino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bias plasma deposition for selective low dielectric insulation
- Patent number 5,990,557
- Issue date Nov 23, 1999
- Advanced Micro Devices, Inc.
- Steven Avanzino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using uniform nonconformal deposition for form...
- Patent number 5,955,786
- Issue date Sep 21, 1999
- Advanced Micro Devices, Inc.
- Steven Avanzino
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Damascene processing using dielectric barrier films
- Publication number 20070035025
- Publication date Feb 15, 2007
- Advanced Micro Devices, Inc.
- Kai Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low temperature dielectric deposition to improve copper electromigr...
- Publication number 20040023511
- Publication date Feb 5, 2004
- Advanced Micro Devices, Inc.
- Steven C. Avanzino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for formation of a wiring network using a porous interlevel...
- Publication number 20030218253
- Publication date Nov 27, 2003
- Steven C. Avanzino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial inlay process for improved integration of porous interl...
- Publication number 20030219968
- Publication date Nov 27, 2003
- Ercan Adem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stabilizing fluorine etching of low-k materials
- Publication number 20020140101
- Publication date Oct 3, 2002
- Advanced Micro Devices, Inc.
- Kai Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Deposition Process For Passivating Top Interface Of Damas...
- Publication number 20020027261
- Publication date Mar 7, 2002
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS

Darrell M. Erb

Person

Patents Grantslast 30 patents

Composite tantalum nitride/tantalum copper capping layer

Predicting EM reliability by decoupling extrinsic and intrinsic sigma

Stabilizing fluorine etching of low-k materials

Composite tantalum capped inlaid copper with reduced electromigrati...

Copper interconnects with metal capping layer and selective copper...

Method of forming a selective barrier layer using a sacrificial layer

Continuous barrier for interconnect structure formed in porous diel...

Self-aligned conductive plugs in a semiconductor device

Diffusion barrier and method for its production

Low temperature dielectric deposition to improve copper electromigr...

Copper interconnect with improved barrier layer

Use of an alloying element to form a stable oxide layer on the surf...

Selective deposition process for allowing damascene-type Cu interco...

Anneal hillock suppression method in integrated circuit interconnects

Silicon carbide barc in dual damascene processing

Selective deposition process for passivating top interface of damas...

Selective electroplating with direct contact chemical polishing

Process for alloying damascene-type Cu interconnect lines

Anti-reflective coating used in the fabrication of microcircuit str...

Dual damascene arrangement for metal interconnection with oxide die...

Method and apparatus for improved planarity metallization by electr...

Process for passivating top interface of damascene-type Cu intercon...

Self-aligned dual damascene arrangement for metal interconnection w...

Chemically removable Cu CMP slurry abrasive

Antireflective coating used in the fabrication of microcircuit stru...

Chemically removable Cu CMP slurry abrasive

High planarity high-density in-laid metallization patterns by damas...

Selective nonconformal deposition for forming low dielectric insula...

Bias plasma deposition for selective low dielectric insulation

Semiconductor device using uniform nonconformal deposition for form...

Patents Applicationslast 30 patents

Damascene processing using dielectric barrier films

Low temperature dielectric deposition to improve copper electromigr...

Process for formation of a wiring network using a porous interlevel...

Sacrificial inlay process for improved integration of porous interl...

Stabilizing fluorine etching of low-k materials

Selective Deposition Process For Passivating Top Interface Of Damas...